SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK
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Transcript of SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 1 -
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model parameter) PART NUMBER: TPCP8402 MANUFACTURER: TOSHIBA Body Diode (Model parameter) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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Circuit Configuration
7
21
8
43
56
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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0.1
1
10
100
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)
TR
AN
SC
ON
DU
CT
AN
CE
GF
S(s
)
Measurement
Simulation
P-Channel Model Transconductance Characteristic
Circuit Simulation Result
Comparison table
- Id(A) gfs
Error(%) Measurement Simulation
0.2 2.11 2.20 4.51
0.5 3.33 3.45 3.50
1 4.83 4.78 -1.06
2 6.67 6.62 -0.75
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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open
open
0
open
open
V1
-10Vdc
V3 0Vdc
VGS
0Vdc
U1 TPCP8402
R1
100MEG
0
open
V_VGS
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
P-Channel Model
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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0
1
2
3
4
0 1 2 3 4 5
- Gate - Source Voltage VGS (V)
- D
rain
Cu
rre
nt
ID (
A)
Measurement
Simulation
P-Channel Model Comparison Graph Circuit Simulation Result
Simulation Result
- ID(A) - VGS(V)
Error (%) Measurement Simulation
0 1.8000 1.8000 0.0000
0.1 1.9200 1.9036 -0.8542
0.2 1.9700 1.9580 -0.6091
0.5 2.0500 2.0670 0.8293
1 2.2000 2.1914 -0.3909
2 2.3500 2.3705 0.8723
3 2.5000 2.5104 0.4160
4 2.6300 2.6300 0.0000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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V_VDS
0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV -160mV -180mV
I(V3)
0A
-0.5A
-1.0A
-1.5A
-1.7A
P-Channel Model Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-1.7A, VGS=-10V Measurement Simulation Error (%)
RDS (on) 60 m 60 m 0.000
VGS
-10Vdc
open
0
VDS
0Vdc
open
open
0
R1
100MEG
open
U1 TPCP8402
open
V3
0Vdc
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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Time*1mA
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:4)
0V
-2V
-4V
-6V
-8V
-10V
P-Channel Model Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-24V,ID=-3.4A Measurement Simulation Error (%)
Qgs 1.400 nC 1.4074 nC 0.529
Qgd 2.700 nC 2.6790 nC -0.778
Qg 14.000 nC 8.1066 nC -42.096
0
open
DbreakD1
Ropen
100MEG
0
open
U1 TPCP8402
-
+
W1
ION = 0AIOFF = 1mA
W
open
open
open
VD-24Vdc
I1
-4AdcI2TD = 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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P-Channel Model Capacitance Characteristic
Simulation Result
- VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.5 15.000 15.051 0.340
1 12.000 12.026 0.216
2 10.000 10.187 1.872
5 7.600 7.599 -0.014
10 6.000 6.124 2.070
20 5.000 5.059 1.175
30 4.500 4.566 1.463
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1.5 V(L3:1)
8V
6V
4V
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
-16V
-18V
-20V
P-Channel Model Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -1.7A, VDD=-15V VGS=0/-10V
Measurement Simulation Error(%)
ton 12.000 ns 11.984 ns -0.133
VGS
ID
VGS
ID
L3
30nH
open
V1TD = 1u
TF = 10nPW = 10uPER = 10m
V1 = 0
TR = 10n
V2 = -20
open
open2
R2
4.7
RL
8.82
U1 TPCP8402
0
Ropen
100MEG
open
R1
4.7
0
VD-15Vdc
open
3
___ VGS ___ VOUT/1.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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0
R1
100MEG
open
U1 TPCP8402
open
V1
-10Vdc
open
open
0
V3 0Vdc
VGS
0Vdc
open
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
P- Channel Model Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-2.3V
-2.5V
-2.6V
-2.7V
-2.8V
-10V
-6.0V
-3.5V
-4.5V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
1.0A
10A
500mA
P-Channel Model BODY DIODE Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
Ropen
100MEG
0
open
open 0open
R1
0.01mU1 TPCP8402
openopen
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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0.1
1
10
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)
Dra
in r
evers
e C
urr
en
t -
IDR
(A
)
Measurement
Simulation
P-Channel Model Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error Measuremen Simulation
0.5 0.7300 0.7382 1.1214
1 0.7800 0.7830 0.3846
2 0.8350 0.8399 0.5868
5 0.9500 0.9547 0.4947
10 1.108 1.1062 -0.1625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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Ropen
1G
V1
TD = 0
TF = 5.7nsPW = 1usPER = 50us
V1 = -9.6V
TR = 10ns
V2 = 10.8V
R1 50
openopen
open
0
0
open open
U1TPCP8402
Time
0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
P-Channel Model Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
trj (ns) Measurement Simulation Error (%)
trj (ns) 8.600 8.6033 0.038
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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P-Channel Model Reverse Recovery Characteristic Reference
Trj=8.6 (ns) Trb=10.2 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
open
0
U1 TPCP8402
Ropen
100MEG
open
open
R1
0.01m
0
openV1
0Vdc
open
open
P-Channel Model ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17 -
P-Channel Model Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 18 -
0.1
1
10
100
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)
TR
AN
SC
ON
DU
CT
AN
CE
GF
S(s
)
Measurement
Simulation
N-Channel Model Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error (%) Measurement Simulation
0.2 2.11 2.13 1.08
0.5 3.33 3.31 -0.66
1 4.65 4.63 -0.46
2 6.67 6.43 -3.59
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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V_VGS
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(Vsense)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
7.0A
8.0A
N-Channel Model Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
0
openVGS
0Vdc
U5
TPCP8402
open
R1
100MEG
open
V3
0Vdc
V1
10Vdc
open
0
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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0
2
4
6
8
0 1 2 3 4 5
Gate - Source Voltage VGS (V)
Dra
in C
urr
en
t ID
(A
)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0 2.3000 2.3000 0.0000
0.1 2.5200 2.5409 0.8294
0.2 2.6000 2.5971 -0.1115
0.5 2.7000 2.7096 0.3556
1 2.8300 2.8381 0.2862
2 3.0150 3.0227 0.2554
5 3.4000 3.3991 -0.0265
8 3.6800 3.6788 -0.0326
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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V_VDS
0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV 180mV
I(V3)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
1.8A
2.0A
2.2A
2.4A
N-Channel Model Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.1A, VGS=10V Measurement Simulation Error (%)
RDS (on) 38.000 m 38.000 m 0.000
V30Vdc
VDS
0Vdc
openVGS
10Vdc
0
R1
100MEG
open
open
open
0
U2
TPCP8402
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 22 -
Time*1mA
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:3)
0V
2V
4V
6V
8V
10V
12V
14V
16V
0
I2TD = 0
I1
4Adc
Vsense
open
Ropen
100MEG
open
0
-
+W1
ION = 0AIOFF = 1mA
W
U1
TPCP8402
open
open
DbreakD1
VD24Vdc
open
N-Channel Model Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=24V,ID=4.0A Measurement Simulation Error (%)
Qgs 1.700 nC 1.6964 nC -0.212
Qgd 2.400 nC 2.3978 nC -0.092
Qg 14.000 nC 7.5500 nC -46.071
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 23 -
N-Channel Model
Capacitance Characteristic
Simulation Result
VDS(V)
Cbd(pF)
Error(%) Measurement Simulation
0.1 140.0000 141.0000 0.7143
0.2 108.0000 107.5000 -0.4630
0.5 70.0000 69.5000 -0.7143
1 50.0000 49.8875 -0.2250
2 35.0000 34.6560 -0.9829
5 21.0000 20.9978 -0.0105
10 14.0000 14.5679 4.0563
20 9.5000 9.6499 1.5774
30 7.5000 7.3527 -1.9642
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 24 -
Ropen
100MEG
2
3
open
R2
4.7
0
L3
30nH
U2
TPCP8402
open
RL
7.14
V1TD = 1u
TF = 10nPW = 10uPER = 10m
V1 = 0
TR = 10n
V2 = 20
open
VD15Vdc
0
R1
4.7
open
open
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(2) V(3)/1.5
-8V
-6V
-4V
-2V
0V
2V
4V
6V
8V
10V
12V
14V
16V
18V
20V
N-Channel Model
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= 2.1A, VDD=15V VGS=0/10V
Measurement Simulation Error(%)
ton 8.300 ns 8.2954 ns -0.055
VGS
ID
___ VGS ___ VOUT/1.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 25 -
V_VDS
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(Vsense)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
3.5A
4.0A
4.5A
5.0A
N-Channel Model
Output Characteristic Circuit Simulation result
Evaluation circuit
VGS= 2.8V
3.0V
3.2 V
3.5V 3.8V 4.0V 10V
8.0V 6.0V
0
U2
TPCP8402
V30Vdc
0
open
R1
100MEGVGS
0Vdc
openopen
open
V1
10Vdc
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 26 -
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
100mA
1.0A
10A
R1
0.01mopen
open
0
open
0
V1
0Vdc
open
open
Ropen
100MEG
U1TPCP8402
N-Channel Model BODY DIODE Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 27 -
0.1
1
10
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)
Dra
in r
evers
e C
urr
en
t -
IDR
(A
)
Measurement
Simulation
N-Channel Model
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VSD(V)
%Error Measurement Simulation
0.1 0.7000 0.6998 -0.0286
0.2 0.7200 0.7190 -0.1389
0.5 0.7500 0.7492 -0.1067
1 0.7800 0.7793 -0.0897
2 0.8200 0.8213 0.1585
5 0.9100 0.9089 -0.1209
10 1.02 1.0204 0.0392
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 28 -
openopen
Ropen
1G
0
0
U1TPCP8402
V1
TD = 0
TF = 5.7nsPW = 1usPER = 50us
V1 = -9.6V
TR = 10ns
V2 = 10.8V
open
R1 50
open open
Time
0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
N-Channel Model
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
trj (ns) Measurement Simulation Error (%)
trj (ns) 8.600 8.6033 0.038
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 29 -
N-Channel Model
Reverse Recovery Characteristic Reference
Trj=8.6(ns) Trb=10.2(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 30 -
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
open
0
U1 TPCP8402
Ropen
100MEG
open
open
R1
0.01m
0
openV1
0Vdc
open
open
N-Channel Model ESD PROTECTION DIODE Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 31 -
N-Channel Model Zener Voltage Characteristic Reference