SPICE MODEL of SSM5H05TU (Professional+BDS+SBDP Model) in SPICE PARK
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Transcript of SPICE MODEL of SSM5H05TU (Professional+BDS+SBDP Model) in SPICE PARK
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
COMPONENTS: Power MOSFET (Professional) /
Schottky Rectifier (Professional)
PART NUMBER: SSM5H05TU
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Transconductance Characteristic Circuit Simulation Result
Comparison table
ID(A) Gfs
Error (%) Measurement Simulation
0.500 2.220 2.190 -1.351
1.000 3.100 3.064 -1.161
2.000 4.260 4.266 0.141
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
Vgs
0Vdc
Open
Vds
3VdcU6SSM5H05TU
0
Open
open
V2
0Vdc
RS
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
0.010 0.930 0.931 0.107
0.020 0.950 0.957 0.736
0.050 1.000 1.010 1.000
0.100 1.050 1.070 1.904
0.200 1.150 1.159 0.782
0.500 1.320 1.327 0.530
1.000 1.510 1.520 0.662
2.000 1.800 1.800 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
VD10Vdc
VG2.5Vdc
0
R1
100MEG
OPENOPEN
V1
0Vdc
OPEN
U2
SSM5H05TU
0
Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.75A, VGS=2.5V Measurement Simulation Error (%)
RDS (on) 154.00 m 154.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Id-Rds(on) Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=10V,ID=1.5A Measurement Simulation Error (%)
Qgs 0.250 nC 0.245 nC -2.000
Qgd 0.565 nC 0.560 nC -0.885
Qg 3.100 nC 3.080 nC -0.645
0
Open
0
open
Open
RS
100MEG
D1
Dbreak
U5SSM5H05TU
V110Vdc
I21.5Adc
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n
-
+W1
ION = 0uAIOFF = 1mAW
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.10 109.00 109.80 0.73
0.20 104.00 104.70 0.67
0.50 94.00 93.62 -0.40
1.00 80.00 80.23 0.29
2.00 63.00 64.13 1.79
5.00 43.00 43.04 0.09
10.00 30.00 30.11 0.37
20.00 20.00 20.25 1.25
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
4.97us 4.99us 5.01us 5.03us 5.05us 5.07us 5.09us
V(2)*4 V(3)
0V
4V
8V
12V
RG
4.7
0
L1
30nH
open
U5SSM5H05TU V1
10Vdc
RS
100MEG
R2
13.35
0
L2
30nH
R1
4.7
Open
Open
V2TD = 2u
TF = 5nPW = 10uPER = 30u
V1 = 0
TR = 5n
V2 = 5
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.75A, VDD=10V VGS=2.5V
Measurement Simulation Error(%)
ton 15.5 ns 15.55 ns 0.322
VGS
ID Vg = 0/2.5V
VDD = 10V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V2
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
3.5A
4.0A
4.5A
5.0A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=1.8V
2.4V
2.0V
2.2V
Open
Vgs
0Vdc
Open
Vds
0Vdc
0
open
0
R1
100MEG
V2
0Vdc
U5SSM5H05TU
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Output Characteristic Reference
VGS=1.8V
2.4V
2V
2.2V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Body Diode Model
Pspice model parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
0
Open
R1
0.01m
U6SSM5H05TU
0
VD
0Vdc RS
100MEG
open
Open
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd(A) Vfwd(V)
Measurement Vfwd(V)
Simulation %Error
0.010 0.590 0.591 0.169
0.020 0.600 0.603 0.500
0.050 0.620 0.622 0.323
0.100 0.640 0.639 -0.156
0.200 0.660 0.659 -0.152
0.500 0.690 0.689 -0.145
1.000 0.710 0.713 0.423
2.000 0.740 0.738 -0.270
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
open
R1
50
0
0
V1
TD = 0
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
Open
U6SSM5H05TU
Open
RS
100MEG
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation circuit
Compare Measurement vs. Simulation
trr Measurement Simulation Error(%)
trj+trb 16 ns 16 ns 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic Reference
trj=6.4(ns) trb=9.6(ns) Conditions:Ifwd=Irev=0.2(A),Rl=50
Relation between trj and trb
Measurement
Example
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
RS
100MEG
0
Open
U5SSM5H05TU
Open
V1
0Vdc
0
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
R1
0.01m
open open
V10Vdc
0
0open
U2SSM5H05TU
open
RS
100MEG
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Ifwd (A)
Vfwd (V)
%Error Measurement Simulation
0.001 0.120 0.120 0.000
0.002 0.138 0.138 0.364
0.006 0.170 0.166 -2.353
0.010 0.188 0.182 -3.298
0.022 0.214 0.207 -3.185
0.052 0.240 0.238 -0.668
0.099 0.261 0.269 2.874
0.200 0.300 0.310 3.333
0.500 0.437 0.429 -1.739
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Junction Capacitance Characteristic Circuit Simulation Result
Evaluation Circuit
U2SSM5H05TU
openopen
0
RS
100MEG
open
V2
0Vdc
0
V1
TD = 0
TF = 10nsPW = 50usPER = 10us
V1 = 0
TR = 1us
V2 = 5
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Vrev(V) Cj(pF)
%Error Measurement Simulation
0.000 83.209 83.209 0.000
0.100 81.209 82.242 1.272
0.200 79.273 80.200 1.169
0.500 72.172 73.355 1.639
1.000 60.129 62.007 3.123
2.000 44.904 46.502 3.559
5.000 23.041 23.742 3.042
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Characteristic Circuit Simulation Result
Evaluation Circuit
V1
0Vdcopenopen
0
RL
0.1m
U2SSM5H05TU
0
open
RS
100MEG
open
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
Vrev(V) Irev (uA)
%Error Measurement Simulation
4.00 11.60 11.89 2.50
6.00 13.70 13.25 -3.28
8.00 15.80 15.41 -2.47
10.00 17.90 18.00 0.56
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Current Characteristic Reference