RD50, CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz 1 Interstrip Characteristics of ATLAS07...
-
Upload
lionel-wilkerson -
Category
Documents
-
view
216 -
download
4
Transcript of RD50, CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz 1 Interstrip Characteristics of ATLAS07...
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz1
Interstrip Characteristics of ATLAS07 n-on-p FZ Silicon Detectors
S. Lindgren, C. Betancourt, G. Bredeson, N. Dawson , J. G. Wright, H. F.-W. SadrozinskiSanta Cruz Institute for Particle Physics, Univ. of California Santa Cruz, CA 95064 USA
Y. Unno, S. Terada, Y. Ikegami, T. Kohriki Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801, Japan
K. Hara, H. Hatano, S. Mitsui, M. YamadaUniversity of Tsukuba, Institute of Pure and Applied Sciences, Tsukuba, Ibaraki 305-9751, Japan
A. Chilingarov, H. FoxPhysics Department, Lancaster University, Lancaster LA1 4YB, United Kingdom
1
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz2
Need to start Large-Scale Production: HPK
2
• What are the operational characteristics of irradiated n-on-p FZ detectors?– Can adequate strip isolation
be achieved after irradiation?– Does it depend on specific
surface treatment? (p-spray, p-stop)
– Do detectors with better strip isolation have lower breakdown?
– Are complicated punch-through structures needed for adequate punch-through protection?
Silicon Detectors for the High Luminosity Upgrade
• Signal collection requires- High voltage operation
• Higher rate of particles requires- higher segmentation of detecting electrodes-acceptable data transfer rate
• N-strips in P-bulk wafer (n-in-p)- always depleting from strip side- lower cost- collecting electrons
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz3
3
History of ATLAS07 Submissions @ HPK
X1: p-stop, p-spray+p-stop
Weak spots identified Mask modification
X2 ~
with modified mask
X3many doping
densities
S2p-stop, p-spray
90 wafers
S1p-stop, 30 wafers
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz4
4
n-in-p Sensor
• Past Japanese studies– 4 inch (100 mm) wafers
• FZ<111> (~6k Ωcm)• MCZ<100> (~900 Ωcm)
– 6 inch (150 mm) wafers• FZ1<100>(~6.7k Ωcm)• FZ2<100>(~6.2k Ωcm)• MCZ<100>(~2.3k Ωcm)
– FZ, MCZ available at HPK
• ATLAS07 submission– 6 inch (150 mm) wafers
• FZ1<100>(~6.7k Ωcm)• (FZ2<100>(~6.2k Ωcm)
• Miniature sensors – 1cm x 1cm
• Irradiation studies
• Full size prototype sensors for Stave program– 9.75 cm x 9.75 cm
• 4 segments: two "axial" and two "stereo" (inclined) strips
• Short strips
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz5
5
24 n-in-p Miniature Sensors
• Radiation damage study– Strip Isolation (Zone1, Zone2, Zone3)
• Structure: p-stop, p-spray, p-stop+p-spray• Density: 1x, 2x, 4x, 10x1012 ions/cm2, ...
– "Punch-through Protection" structures (Zone4)– Narrow metal effect (Zone5)– Wide pitch effect (Zone6)
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz6
6
Evaluations• Irradiations
– 70 MeV protons at CYRIC (Tohoku Univ., Japan)– Reactor neutrons at Ljubljana (Slovenia)
• Measurements– Full-size sensors (see J. Bohm’s talk)
• C-V, i-V, single-strip measurements– Onset of Microdischarge
• I-V• Hot electron
– Charge collection efficiency (CCE) (a few slides by A. Affolder)• 90Sr beta ray
– Surface:• Interstrip resistance• Interstrip capacitance
– Punch-through Protection• Dynamic resistance with a constant bias voltage to the backplane
Interstrip resistance
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz77
• Using the detectors DC-pads• The setup purpose is to measure the current in the test strip due to the applied voltage on the neighbors using a parameter analyzer. Measurement was done at different bias voltages.• Data taken is plotted as test current against the neighbor voltage
y = -3.55E-06x + 5.82E-08
y = -2.45E-06x + 7.16E-08
y = -1.64E-06x + 9.88E-08
y = -1.07E-06x + 1.33E-07
y = -3.33E-07x + 1.45E-07
-4.00E-06
-3.00E-06
-2.00E-06
-1.00E-06
0.00E+00
1.00E-06
2.00E-06
3.00E-06
4.00E-06
5.00E-06
-1.5 -1 -0.5 0 0.5 1 1.5
Curr
ent(
A)
Voltage (V)
I1 vs V2
5 volts
20 volts
50 volts
100 volts
300 volts
Interstrip Resistance Measurements
21int
2
dvdiR
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz8
Interstrip Resistance Results
8
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
0 50 100 150 200 250 300
Res
ista
nce
(Oh
ms)
Bias Voltage (V)
Interstrip Resistance for Detectors from the 3rd Series
W46-BZ3-P1 (PRE RAD)
W46-BZ3-P1 (POST RAD)
W44-BZ2-P2 (POST RAD)
W40-BZ2-P2 (PRE RAD)
W40-BZ2-P2 (POST RAD)
W40-BZ3-P1 (PRE RAD)
W40-BZ3-P1 (POST RAD)
W33-BZ3-P1 (PRE RAD)
W33-BZ3-P1 (POST RAD)
W23-BZ3-P15 (PRE RAD)
W23-BZ3-P15 (POST RAD)
W02-BZ2-P2 (PRE RAD)
W02-BZ2-P2 (POST RAD)
W02-BZ4B-P10 (PRE-RAD)
W02-BZ4B-P10 (POST-RAD)
W02-BZ5-P11 (PRE-RAD)
W02-BZ5-P11 (POST-RAD)
Pre-rad
Total p-dose = 4*1012 cm-2
Total p-dose = 2*1012 cm-2
Total p-dose = 1*1012 cm-2
Φ = 1.14e13 neq
y = 1.43E+06e1.90E-12x
1.00E+06
1.00E+07
1.00E+08
1.00E+09
1.00E+10
1.00E+11
1.00E+12
0 2E+12 4E+12 6E+12
Rin
t (O
hm
s)
Total P-Dose (1/cm^2)
Rint
Fit
(1/cm2)
Rin
t(Ω
)
1012
1011
109
108
107
106
2x1012 4x1012 6x1012
1010
Φ = 1e13 neq
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
1.0E+14
0 50 100 150 200 250 300
Res
ista
nce
(oh
ms)
Bias Voltage (V)
(filled = pre-rad, open squares = 1e12 neq , open diamonds = 1e13 neq)
W18-BZ4D-P22 (PRE-RAD)
W18-BZ4D-22 (POST-RAD)
W18-BZ4C-P16 (PRE-RAD)
W18-BZ4C-P16 (POS-RAD)
W18-BZ4B-P10 (PRE-RAD)
W18-BZ4B-P10 (POST-RAD)
W18-BZ4A-P4 (PRE-RAD)
W18-BZ4A-P4 (POST-RAD)
W18-BZ3-P18 (POST-RAD)
W18-BZ3-P15 (POST-RAD)
W18-BZ2-P17 (POST-RAD)
W18-BZ2-P14 (POST-RAD)
W17-BZ4D-P22 (PRE-RAD)
W17-BZ4D-P22 (POST-RAD)
W17-BZ4C-P16 (PRE-RAD)
W17-BZ4C-P16 (POST-RAD)
W17-BZ4B-P10 (PRE-RAD)
W17-BZ4B-P10 (POST-RAD)
W17-BZ4A-P4 (PRE-RAD)
W17-BZ4A-P4 (POST-RAD)
W17-BZ3-P9 (PRE-RAD)
W17-BZ3-P9 (POST-RAD)
W17-BZ3-P13 (PRE-RAD)
W17-BZ3-P13 (POST-RAD)
W17-BZ2-P2 (POST-RAD)
W17-BZ2-P14 (POST-RAD)
Series 1 Total P-Dose = 4*1012 cm-2 p-stop only
• To first order, interstrip resistance depends not on the specific zone, but depends on the total p-dose applied.• Higher total p-dose means better strip isolation after irradiation.• All Series 1 detectors exhibit a good post-rad Rint (>10^8 Ohms) behavior, even after being irradiated with protons up to 1e13 neq
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz9
Interstrip Capacitance
9
450
500
550
600
650
700
750
800
0 500 1000
Ca
pa
cit
en
ce
(fF
)
Bias Voltage(V)
Interstrips capacitance for 3rd series (@1MHz)
W46-BZ3-P1(PRE RAD)
W46-BZ3-P1(POST RAD)
W40-BZ3-P1 (PRE RAD)
W40-BZ3-P1 (POST RAD)
W33-BZ3-P1 (PRE RAD)
W23-BZ3-P15 (PRE RAD)
W12-BZ3-P1 (PRE RAD)
W12-BZ3-P1 (POST RAD)
W02-BZ3-P1 (PRE RAD)
• AC pads are used.• 5 probes are used; one on the test strip, one on each neighbor, and two more to ground the next neighbors.
560
580
600
620
640
660
0 200 400 600 800 1000
Ca
pa
cit
en
ce
(fF
)
Bias Voltage(V)
Interstrips capacitance for 3rd series, wafer 1, 2 and 4 (@1MHz)
W02-BZ4B-P10 (POST RAD)
W02-BZ4A-P4 (POST RAD)
W02-BZ2-P2 (POST RAD)
W02-BZ1-P7 (POST RAD)
W02-BZ4C-P10 (POST RAD)
W02-BZ4D-P22 (POST RAD)
W44-BZ2-P2 (POST RAD)
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz10
Rint vs. Cint
10
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
500 600 700 800 900
Res
ista
ce (
Ω)
Capacitance (fF)
W46-BZ3-P1W44-BZ2-P2W40-BZ3-P1 W35-BZ1-P19W35-BZ2-P17W35-BZ5-P11W33-BZ3-P1W31-BZ5-P11W25-BZ5-P11W12-BZ3-P1W02-BZ1-P7W02-BZ2-P2W02-BZ4A-P4W02-BZ4B-P10W02-BZ4C-P16W02-BZ4D-P22W1-BZ5-P11W1-BZ2-P17W1-BZ1-P19
Zone 5
Zone 4Φ = 1e13 neq
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
1.0E+13
550 650 750
Re
sis
tac
e (Ω
)
Capacitance (fF)
Rint vs. Cint for the 3rd series
W46-BZ3-P1 (PRE RAD)
W46-BZ3-P1 (POST RAD)
W40-BZ3-P1 (PRE RAD)
W40-BZ3-P1 (POST RAD)
W33-BZ3-P1 (PRE RAD)
W33-BZ3-P1 (POST RAD)
W23-BZ3-P15 (PRE RAD)
W23-BZ3-P15 (POST RAD)
W12-BZ3-P1 (PRE RAD)
W12-BZ3-P1 (POST RAD)
W02-BZ3-P1 (PRE RAD)
W02-BZ3-P1 (POST RAD)
0
5
10
15
20
25
30
35
40
45
50
0 200 400 600 800 1000
Cu
rren
t (µA
)
Bias Voltage (V)
W02-BZ1-P7W02-BZ3-P1W02-BZ4A-P4W02-BZ4B-P10W02-BZ4C-P16W02-BZ4D-P22W02-BZ5-P11W12-BZ3-P1W23-BZ3-P15W33-BZ3-P1W44-BZ2-P2W46-BZ3-P1
Φ = 1e13 neq
• Helpful to make scatter plot between Rint and Cint
• Strip isolation is best in the upper left corner, and worst in the lower right.• Dependence of post-rad Cint on specific zone is seen.• Zone 5 (narrow metal) has the highest Post-rad Cint without providing better breakdown performance.
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz11
Punch-Through Protection: (against large strip voltages)
11
Z4A Z4B
Z4C Z4D
• Zone 4 detectors include an additional punch-through structures.• Apply a voltage to DC pad and measure the induced current between DC pad and bias resistor.• The effective resistance is then
• Punch-through resistance is defined as
where Rbias is the resistance of the bias resistor.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50
Eff
ec
tiv
e R
es
ista
nc
e (M
Ω)
Test Voltage (Volts)
Z3Z4AZ4BZ4CZ4D
Φ = 1.2e13 neq
Total p-dose = 4e12 cm-2
p-stop only
RPT = Rbias
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50 -40 -30 -20 -10 0
Eff
ecti
ve R
esis
tan
ce (M
Ω)
Test Voltage (Volts)
w42-bz2w42-bz4dw44-bz3w44-bz4dw25-bz3w33-bz3w02-bz3w11-bz4aw11-bz4bw11-bz4cw11-bz4d
1)/1/1( biaseffPT RRR
testtesteff dIdVR /
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz12
Punch-Through Voltage
12
0
5
10
15
20
25
30
W42
-BZ
2-P
8
W42
-BZ
4D
-P22
W44
-BZ
3-P
21
W44
-BZ
4d-P
22
W02
-BZ
3-P
6
W11
-BZ
4A
-P4
W11
-BZ
4B
-P10
W11
-BZ
4C
-P16
W11
-BZ
4D-P
22
W25
-BZ
3-P
9
W33
-BZ
3-P
13
PT
Vo
ltag
e (V
olt
s)
Total p-dose = 2e12
Total p-dose = 4e12
Total p-dose = 4e12
Total p-dose = 2e12
Total p-dose = 4e12
p-spray only = p-spray + p-stop = p-stop only =
0
10
20
30
40
50
60
W43-
BZ
3-P
3
W43-
BZ
4A
-P4
W43-
BZ
4B
-P10
W43-
BZ
4C
-P16
W47-
BZ
3-P
9
W47-
BZ
4A
-P4
W47-
BZ
4B
-P10
W16-
BZ
3-P
6
W16-
BZ
4A
-P4
W16-
BZ
4B
-P10
W16-
BZ
4C
-P16
W16-
BZ
4D
-P22
W42-
BZ
3-P
6
W45-
BZ
4A
-P4
W45-
BZ
4B
-P10
W45-
BZ
4C
-P16
W45-
BZ
4D
W46-
BZ
3-P
6
W49-
BZ
4A
-P4
W49-
BZ
4B
-P10
W49-
BZ
4C
-P16
W49-
BZ
4D
-P22
PT
Vo
lta
ge
(Vo
lts
)
Total p-dose = 4e12
Total p-dose = 1e13 Total p-dose
= 1e13
Total p-dose = 2e13
Total p-dose = 2e12
Φ=1.2e13 neq
p-spray only = p-spray + p-stop = p-stop only =
0
2
4
6
8
10
12
14
16
18
20
pre-rad 1.35x1012 1.35x1012 1.18x1015
PT
Vo
ltag
e (V
olt
s)
Zone 3Total p-dose = 4e12 p-stop only
1.35x1012 1.20x1013 1.18x1015
• Punch-through Voltage is defined as the voltage where
• For Pre-rad detectors, the punch-through voltage is dependent on the wafer number (i.e. the total p-dose).• Dependence on the total p-dose is seen after irradiation, higher p-dose means lower PT Voltage.• Zone 3 exhibits similar PT voltage to Zone 4, without the having a complicated PT structure.• Further, Zone 3 shows adequate protection even at high fluences.
biasPT RR
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz13
Comments on the Effective Resistance
13
0.00E+00
5.00E+05
1.00E+06
1.50E+06
2.00E+06
-70 -60 -50 -40 -30 -20 -10 0
Eff
ecti
ve R
esis
tan
ce (Ω
)
Test Voltage (Volts)
W18-BZ3-P18 1e13neq
-20deg0deg20deg
0.00E+00
5.00E+05
1.00E+06
1.50E+06
2.00E+06
-70 -60 -50 -40 -30 -20 -10 0
Eff
ecti
ve R
esis
tan
ce (
Ω)
Test Voltage (Volts)
W18-BZ3-P18 1e13neq
-20deg (Differential)
-20deg (Integral)
• Measurements at different temperatures reveal a clear temperature dependence on the effective resistance.• The temperature dependence seems to come mainly from the polysilicon bias resistor.• The value of the punch-through voltage does not depend on the temperature.
• The effective resistance can also be defined by taking the integral form of the equation given earlier.• This would have the advantage of incorporating the total current that can be drained from the strip to the bias rail and providing the effective resistance for charges to escape through.• The disadvantage to the integral form is that it is less sensitive to the onset of punch-through, so it is less suitable for defining the punch-through voltage.
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz14
Charge Collection Studies with ATLAS07 n-on-p FZ Silicon Detectors
(compiled by A. Affolder)
A. A. Affolder, P. P. Allport, H. Brown ,G. Casse, A. Greenall, M. Wormaldt Physics Department, Liverpool University, Liverpool, United Kingdom
S. Lindgren, C. Betancourt, G. Bredeson, N. Dawson , J. G. Wright, H. F.-W. Sadrozinski
Santa Cruz Institute for Particle Physics, Univ. of California Santa Cruz, CA 95064 USA
- V. Cindro, G. Kramberger, I. Mandic, M. Mikuz- Josef Stefan Institute and University of Ljubljan, Slovenia
Y. Unno, S. Terada, Y. Ikegami, T. Kohriki Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-
0801, Japan
K. Hara, H. Hatano, S. Mitsui, M. YamadaUniversity of Tsukuba, Institute of Pure and Applied Sciences, Tsukuba, Ibaraki 305-
9751, Japan
14
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz15
Summary of Results from Different Sources
15
• HPK data shown from all sites (with annealing corrections, i.e. CCE reduced by -20%+/-10%). Pion irradiation measurements corrected for annealing during run
Is this systematically low
Are these variances large?
500 V
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz16
Liverpool Only Data
• Remove normalization, annealing effects• Results look consistent
– Would assume variance due to slight systematic differences in normalizations/annealing corrections
16
Correction to remove annealing too strong at lower fluences
500 V
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz17
Summary
• NIEL appears to work for charge collection with n-in-p FZ detectors• Micron and HPK consistent over measure fluence range
17
500 V
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz1818
Conclusions• Good cooperation between ATLAS groups and HPK: 3 pre-series and 2 full series runs in about 2 years.• All HPK detectors have a breakdown voltage that exceeds 900V, exceeding the specifications.•To first order, the interstrip resistance does not depend on the specific zone, but instead depends on the total p-dose of p-impurities on the surface (p-stop + p-spray).• The interstrip capacitance shows little change after irradiation and is dependent on the specific zones.• Zone 5 (narrow metal) has the highest interstrip capacitance after irradiation (Don’t use narrow metal!).• The punch-through voltage depends on the total p-dose in all configurations (p-stop only, p-stop+spray, p-spray only). Wafers with the highest total p-dose have a higher punch-through voltage, which holds true even after irradiation.• After irradiation, Zone 3 detectors (Gap = 70 m) have a similar punch-through voltage as Zone 4 detectors, which are made with a specific punch-through protection structure (Gap = 30 m) . Needs explanation!• The acceptable punch-through voltage of the Zone 3 sensors with p-stops of 4*1012 cm-2 extends to proton fluences beyond 1015 p/cm2.
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz1919
•We acknowledge the good collaboration with the Hamamatsu Photonics team.• The invaluable assistance of CYRIC and their staff in carrying out the radiation is acknowledged.
ATLAS Upgrade Silicon Strip Detector Collaboration:H. Chen, J. Kierstead, Z. Li, D. Lynn , Brookhaven National Laboratory
J.R. Carter, L.B.A. Hommels, D. Robinson, University of CambridgeK. Jakobs, M. Köhler, U. Parzefall, Universitat Freiburg
A. Clark, D. Ferrere, S. Gonzalez Sevilla, University of GenevaR. Bates, C. Buttar, L. Eklund, V. O'Shea, University of Glasgow
Y. Unno, S. Terada, Y. Ikegami, T. Kohriki, KEK A. Chilingarov, H. Fox, Lancaster University
A. A. Affolder, P. P. Allport, H. Brown ,G. Casse, A. Greenall, M. Wormald, University of LiverpoolV. Cindro, G. Kramberger, I. Mandic, M. Mikuz, Josef Stefan Institute and University of Ljubljana
I. Gorelov, M. Hoeferkamp, J. Metcalfe, S. Seidel, K. Toms, University of New MexicoZ. Dolezal, P. Kodys, Charles University in Prague
J.Bohm, M.Mikestikova, Academy of Sciences of the Czech RepublicC. Betancourt, G. Bredeson, N. Dawson, V. Fadeyev, M. Gerling, A. A. Grillo, S. Lindgren, P. Maddock, F. Martinez-McKinney, H.
F.-W. Sadrozinski, S. Sattari, A. Seiden, J. Von Wilpert, J. Wright, UC Santa CruzR. French, S. Paganis, D. Tsionou, The University of Sheffield
B. DeWilde, R. Maunu, D. Puldon, R. McCarthy, D. Schamberger, Stony Brook UniversityK. Hara, H. Hatano, S. Mitsui, M. Yamada, N. Hamasaki, University of Tsukuba
M. Minano, C. Garcia, C. Lacasta, S. Marti i Garcia , IFIC (Centro Mixto CSIC-UVEG) , and K. Yamamura, S. Kamada, Hamamatsu Photonics K.K.
Acknowledgments
RD50 , CERN Nov 2009 H. F.-W. Sadrozinski, UC Santa Cruz20
Results shown at Vilnius makes it unlikely that temperature is the sole cause.
RD50 Bet Oct 17, 2006
Proposal to pay off the bet in a communal way:
Bookie will forgo his usual proceeds (50% of total) and pay for drinks in the Bar tonight at 7 pm
“Will the "Kramberger effect" be traced to a temperature effect?”
Betting was heavily against (all in SFrs) Against ForMoll 5 Hartmut 5Vladimir Cindro 1000 Thor 40 krNoman 2 Panja 3.75Thor 5 Maurice 2Gregor 5 Elena 10KopekVladPad 5 VladPad 2Simon 5Alex? 10Uli 10
47 12.75Sum 59.75