Applications Principle of Operations Silicon Detectors...

IEEE2000: Silicon Detectors Hartmut F.-W. Sadrozinski , SCIPP, UC Santa Cruz

SCIPPSCIPP

Applications of Silicon Detectors

Hartmut F.-W. SadrozinskiSanta Cruz Institute for Particle Physics (SCIPP)

Principle of OperationsThe Rise of Silicon DetectorsApplications

Charged Particle TrackingPhoton Detection


SCIPPSCIPP Area of Application of Silicon Detectors

Gravitation Electro-magnetic Weak Strong Interaction

Astrophysics:Imaging, Tracking

Medicine:Imaging

X-talography:Imaging

Particle Physics:Tracking

Nuclear PhysicsX-Spectroscopy

R&D and Applicationsextends from Quarks (1028m).

Silicon Detectors are used forScience at every scale.

The choice of detector depends on the energy, time structure and strength of the signal


SCIPPSCIPP Principle of Silicon Strip Detectors

25-200 µm

300-400 µm

Alat ~ 100V

n+ implant

Al SiO2

p+ implantat ground

Depletion region. Charged particletraversing region produces ~80electron/hole pairs per micron.

Readout electronics(S/N typically > 20)

holes

Reverse Bias of junction: thermal current generationScale : Band gap 1.12eV vs. kT = 1/40eVCooling needed only in ultra-low noise applications.Wafer thickness 300um = 24k e-h pairs = 0.3%RLDepletion Voltage ~ thickness2 Ladders


SCIPPSCIPP Evolution of Silicon Detectors

Si Drift

Hybrid Pixels

Monolythic:CCD, MAP

3-D

Large Area

n n n

nnp p

n

Double-sided


SCIPPSCIPP Engineering of Silicon Detectors

Modeling (C. Piemonte, INFN Trieste)

Improve high voltage behavior of Si detectors

Recessed Metal: high field at the junction“Field Plate” = Metal overhangmoves high field to oxide (30x Breakdown strength)

Critical Field at junction reduced by factor 2

Papers # 497,455, 205, 184

metal

P+ - implant

oxide


SCIPPSCIPP The Rise of the Silicon Detectors

Olympic Motto in Silicon Detector Language

Altius Larger - CMS 10M Channels, 230m2Citius Faster - ATLAS 22nsFortius Cheaper - CMS ~$5/cm2

0.01

0.1

1

10

100

1000

1985 1990 1995 2000 2005 2010

Silicon Area [m2]

Year

CDF

ATLASGLAST

CMS

AMS-02

AMS-01

D0

BaBar

NOMAD

LEP

LPSCDFMark2

Pamela

Agile MEGA

1

10

100

1000

104

1985 1990 1995 2000 2005 2010

# of Electronics Channels [in k]

Year

CDF

ATLAS

GLAST

CMS

AMS-02

AMS-01

WIZARD

D0

BaBar

NOMAD

LEP

LPSCDFMark2 Pamela

Agile MEGA



Edge joint and wire bonds before encapsulation

0.01

0.1

1

10

100

10 100 1000 104

Silicon Area vs. # of Electronics Channels

# of Channels [k]

CDF

ATLASGLAST

CMS

AMS-02

AMS-01 D0

BaBar

NOMAD

LEP

LPSCDF

Mark2 Pamela

Agile MEGA

Are

a[m

2 ]

Limited Resources (Power) in Space

Long Ladders possible with:Bonding and Encapsulation



Trends in the Cost of Silicon Detectors

Cost of processing wafers reduced ~ 4x

Increased Area 4” -> 6”Better utilisation of area

Improved Qualitye.g. GLAST detectors:


SCIPPSCIPP Signal in Tracking Detectors

Signal-to-Noise Ratio:Signal ~ ThicknessNoise ~ Area, 1/√τs

Charged Particle Energy Loss

Directional Information compromised byMultiple Scattering

Multiple Scattering angle

->Thin, low z materials-> Improves at High Energy

~1/ββββ2

MIP

Radmeasure p


SCIPPSCIPP Tracking Milestones: Fixed Target

That’s how it all began

Fixed Target experiments withhigh rates:

Na11 (ACCMOR)Na14HeliosE691

Detect heavy decaying particles through their finite decay distance

Silicon Detectors~ 5cm x5cm

Fanout-Cables

Amplifiers


SCIPPSCIPP Tracking Milestones: Vertex Detectors

The big step forward in Mark2:ASIC’s (Terry Walker et al)

Every LEP Experiment has aVertex Detectors:

Double-SidedAC-coupled

Vertex Detector ParadigmASIC’s,Few thin layers,Close in.

ALEPH


SCIPPSCIPP Tracking Milestones: Speed and Rad.Hardness

LPS at HERA“Fixed Target” at ColliderImportance of Electronics:

rad hardfastlow noiselow power

56 planes, 50k channelsElliptical shapes!

2 chip set: Bipolar+CMOS

Radiation Effects:See Mara Bruzzi’s Talk On Wednesday, 14:15


SCIPPSCIPPTracking Milestone: Ultimate Vertex Detectors

BaBar: Long ladders, bend profile, Electronics outside tracking volume

B-Factories:CM is moving, yet stilllow momentum particlesMinimize multiple scattering

Measure the decay time distribution via the difference in decay length between B and Bbar particle.


SCIPPSCIPP Tracking Milestone: Measure Time

BaBar

Finite Life Timeof D Mesons

Performance inProposal and Experimentagree

Belle

Measurement of pulse height in double-sided detectors:Landau Distribution

Papers # 169, 293, 439, 456


SCIPPSCIPP Tracking Milestones: Q.A.

Vertex Detector � Inner DetectorBoth D0 and CDF have ~500k channels

Change in Paradigm: coverage of large areaelectronics inside tracker volume

D0:ModularityYieldTesting Alignment

Paper # 536


SCIPPSCIPP Tracking Milestones: Highest Luminosity LHC

ATLAS: Silicon TrackerSimple Detectors,Optimized Electronics

Thermal Management in ModulesSelf heating of rad. damaged detectorsUse of heat spreader (PG) in a Si-PG-Si sandwich

Temperature Range : -17oC (cooling pipe) to +16oC (ASICs)


SCIPPSCIPP Tracking Milestones: Highest Luminosity LHC

Silicon has arrived:all Silicon Inner DetectorSi Area 223m2, - 6” Wafers -

Continued Paradigm Change:Outside radius : ~1.1m~1R.L. in tracking volume

Papers # 545, 342, 363, 386


SCIPPSCIPP Tracking in Space: AMS

Very long ladders (65cm)Thin mechanical structuresElectronics outside trackingPrecision alignment

Tracking in Magnetic field:Minimize material


SCIPPSCIPP Tracking in Space: Sileye

SileyeInvestigate light flashes seen by Cosmo-/Astro-nauts duringOrbital flights.

Cosmonaut Adveev on Mir

Occurrence of Flashes well correlated with high flux ofCosmic ray particles.


SCIPPSCIPP Tracking in Medicine: NanoDosimetry

Measure interaction of radiation with matter (DNA) on the microscopic level

E2(strong)

ion

particle

δ electronvacuumlow pressure

gas

E1

ion counter

differential pumping

Fron

t-en

d E

lect

roni

cs -----------

Accelerator CycleSignal

DAQ Computer

PCI Bus

AnticoincidenceDiscriminator

Si MicrostipDetector 2

Fron

t-en

d E

lect

roni

cs

Data ReadoutBoard

VME Board

Time-to-DigitConverter

+ HV

PlasticScintillators

Degrader

PMTs

PrimaryParticle

Discriminator

0.5 sec

2.2 sec

Primary Particle Trigger

E, nx, ny

Ionization Cell-----------

Si MicrostipDetector 1

Apparatus uses Silicon Microstrip detectors to track protons and measure their energy by specific ionization ( dE/dx ).UC Santa Cruz

Based on drifting and counting ions frominteraction of proton beam with specimen.(Weizmann Inst., Loma Linda Hospital)


SCIPPSCIPP 2-D Tracking or Imaging Detectors : Pixels

Particle Rate vs Read-out FrequencyLow rate: Projective geometry of rotated silicon strip detectors works wellMedium rate: Small angle stereo, one coordinate is measured less wellHigh rate: truly 2-D detectors: Pixels Issues: Readout Speed, Power

Hybrid Pixels:Separate Detector and Readout Chip, Full Depletion Bump Bonding BTeV&ATLAS &CMS

Focus is on Readout Chipfor fast single photon countingwith good energy resolution50Hz readout of 1cm x 1cm

10 20 30 40 500.0

0.2

0.4

0.6

0.8

1.0

1.2Rb Mo Ag Ba Tb

Nor

mal

ised

Hei

ght

Energy [keV]Papers # 253, 355, 371, 372, 561, 766,


SCIPPSCIPP Tracking Detectors: CCD

3M pixel CCD device for SLDFew um resolution in two coordinates

Worked well for 120Hz SLC operationRadiation Hardness?

Proposed for LCReadout improved for high rate applications“Column parallel CCD”

Detached VertexesIn B and anti-B

Paper # 191


SCIPPSCIPP MonolythicActive Pixels Sensors

High Resistivity: S. Parker et alDon’t hear much about it anymore….

Low resistivity: CMOS“Detectors inside the Chip”Pixel contains diode and readout electronicsDiode coverage is only partial (1-4small diodes)~10um deep active area in epitaxyCollection within 150nsCollection by diffusion: 40% in central pixel

CMOS MIMOSA16k Pixels20um x 20umC = 3fFSignal: ~ 1000e-Noise:~30e-

Integration of Detector and Readout

CMOS Pixel Camera4M pixels, 20nW/pixel

Papers # 45, 46


SCIPPSCIPP Tracking/Imaging: 3D Detector

Departure from Planar Technology.“Stonehenge” Architecture of columns of n- and p-implants in high resistivity bulk.

n n n

nnp p

n

Good S/N:Low Capacitance

Electrical properties Determined by implant separation ~100um: Low Depletion Voltage,good radiation resistance

Paper # 842


SCIPPSCIPP

λ varies by 105!

Photon Detection: How to Measure the Direction

Absorption coefficientλ = (7/9)/Xo

Absorption of PhtotonsN(x) = Noe- λ x

Optical-X-raysNeed Focus:LensesMirrorsCollimatorsCoded MasksProximity

ComptonPartial Direction

γ

calorimeter (energy measurement)

anticoincidenceshield

e+ e–

particle tracking detectors

conversion foil

Pair-ProductionDirection


SCIPPSCIPPApplication: Optical Imaging with CCD’s

36k2

16k2

8k2

4k2

2000Year

20051990 1995 2010

2k×2k

MACHO

Suprime

UH4K

NOAO 4KCFHT MOCAM

NAOJ

BTC

RGO

UH8K EROS2 QUEST NOAO 8k

UW

DMT

WFHRI_1

SDSSCFH12K ESO OmegaCAM

NOAO 8k (thinned)3

3

3

107

108

109

1011

Nu

mber

of

pix

els

DEIMOSUH8K (thinned)MAGNUMCTIO 8kESO 8kMSSSO/WFI

CFHT MegacamSAO/MMT Megacam

1976

SNAPsat

SNAP: 200 CCD @ 10$each

Astronomy: CCD replaced film completely:

ideal match for

Astronomical observations.

long integration time,

long readout time,

low noise

BTC: 4 CCD @ 120k$ each

Progress:

Increase efficiency

Shining from the backside,

high resistivitycollect from bulk

X-rays: Chandra-Newton


SCIPPSCIPP Application: Imaging with Hybrid Pixel Detector

• X-RAY ENERGY : 5 to 25 keV• PIXEL SIZE : 200 µm x 200 µm (~ ESRF source image )• COUNTING RATE : up to 10 7 photons/second/pixel• SENSITIVITY : 1 ph / pixel• DYNAMIC RANGE : 109 (32-bit counters)• REAL TIME STUDIES : up to 3 ms/frame with 128 frames capacity• DIMENSION : 250*250 mm• WEIGHT :


SCIPPSCIPP

X-ray source

object

aft-collimator

pre-collimator

scan direction

silicon strip detector

Strip Detectors in Medicine: Mammography

Large objects, “proximity focussing”Need large detectors!Scan collimated X-ray Source across Si strips

Excized breast tissue 5 cm x 7 cm x 4 cm at 0.3 mGy MGD

Gammex RMI phantom at 0.7 mGy MGD

Paper # 372, 627


SCIPPSCIPP Strip Detectors in Medicine: Mammography

Stationary “Telescope” of Flat Synchrotron beam and Collimator and edge-on Si DetectorScan Sample/Patient.

Edge-on Si stripsHave high efficiencyNo Ghost problem= “Pixels”


SCIPPSCIPP Application: Drift Detectors: Tracking & X-rays

Silicon drift chambersare used as 2-D tracking devices in HEP experiments (Star).Coordinate determined from drift time: savings in electronics channels.

Papers # 184, 300, 366, 377

For high rate X-ray application, need “time stamp”CCD+ Si-Drift = Controlled Drift Detector

Sawtooth Si Drift Detector for soft X-ray application, 200eV resolution @5keV


SCIPPSCIPP Application: Compton Telescope

Compton effect: 2-body reaction correlates energy transfer with scattering angle

−−=

12

2 111cosEE

cmeϕPrecise Energy measurement of Compton electrons constrains the scattering angle.

T. Kamae: Multiple Compton scattersallow good determination of the incident angle, and energy

Thick Silicon detectors increase the conversion probability and energy resolution

Papers # 65 (for Ge)


SCIPPSCIPP Application: Compton Camera in Medicine

Paper # 326

Compton Camera:Silicon detector measures the first scatterCalorimeter measures the energy and direction


SCIPPSCIPP Application: Compton Telescope AstroPhysics

Classical Compton Event Circles

Reduced Compton circles of events with electron track

MEGAUse of electron directionto limit the Compton cone.

Paper # 449, 860

Stack of Silicon detectors


SCIPPSCIPP

1

2

Pair Conversion Telescope: GLAST

Paper # 88

GLASTPair Conversion Tracker:Photon reconstructed from the Conversion Pair tracked in Silicon Telescope

12 thin converters (2.5%R.L)4 thick converters (25%R.L)Single-sided Silicon detectors83m2, 10k detectors, 5M bonds1M channels,


SCIPPSCIPP Success of Silicon Detectors

Micro strip- Tracking (HEP, Astro, Medicine)

Drift

Pixels

CCD Spectroscopy

3-D Optical Imaging (Astro)

AlignmentPads

Compton (Astro, Medicine)

X-ray Imaging (Medicine, X-talography

Exponential growth of Applicationof Silicon Detectors

- in size and channel numbers -

due to:•Improvement in quality•Maturity of designs •Sophistication of fabrication•Industrial base•Reduction in cost•Growth of expertise•Improvement of assembly•Progress in ASIC design

Driven by theimaginationin the application

Applications Principle of Operations Silicon Detectors...

Documents

Transcript of Applications Principle of Operations Silicon Detectors...