RACE-TRACK MEMORY (1)
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Transcript of RACE-TRACK MEMORY (1)
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By
07G21A0555
IV CSE-A
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A Non-volatile memory device under
development @ IBMs Alma den
research center. Based-on a Break through technology
called as Spintronics.
Manipulates the two types ofindependent electrons found in
electrical current -- called the "spin-up"
and "spin-down" electrons.
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Idea is to use a spin-coherent electric
current to move magnetic domains
(rather than to move Parts) along ananoscopic Permalloy wire.
A racetrack memory device is made up
of many such wires and read/write
elements.
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2 ways to arrange RT Memory.
Simplest is a series of flat wires arranged
in a grid with read and write headsarranged nearby.
But more widely studied arrangement
uses U-shaped wires arranged verticallyover a grid of read/write heads on an
underlying substrate.
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Offers performance on the order of 20-
32 ns to read or write a random bit.
Compares to about 3,000,000 ns for ahard drive, or 6-40 ns for conventional
DRAM.
With the use of a "reservoir," improving toabout 9.5 ns.
Throughput is on the order of 250-670
MBPS
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Boots-up Instantly
Can access information 100,000 times
more rapidly than a traditional HDD.
Uses just a few mill watts while, a
computer can consume up to 300mW of
electricity just sitting idle. Pack 100 times as much data into the
same area.
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More reliable than HDDs since it uses no
Mechanical parts, also no wearing of
parts. As fast as a DRAM, but Non-Volatile.
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Microscopic imperfections in the crystal
structure of the wires led to the magnetic
domains becoming stuck. Resulted in performance roughly equal
to traditional HDDs.
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Could replace all other forms of memory.
100,000 times faster .
Can have Devices which stores 500,000
songs or 3,500 full-length movies on one
mobile device.
Which would use considerably lesspower, that a single battery charge
could power a device for weeks rather
than days or hours.
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