Power Management in the New Millenniumewh.ieee.org/r8/ukri/pels/Mawby.pdfPower Electronics Systems....
Transcript of Power Management in the New Millenniumewh.ieee.org/r8/ukri/pels/Mawby.pdfPower Electronics Systems....
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Power Management in the New Millennium
Prof. PA MawbyUniversity of Wales Swansea
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Talk Overview• Introduction• Silicon Power Devices• Packaging• Application Areas• New Materials – SiC & Diamond• Conclusion
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Electronics
InformationProcessing
EnergyProcessing
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Power Electronics is
“Efficient processing of electrical energy through means of electronic switching devices ”
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10
100
1K
10K
100K
1M
10M
100M
10 100 1K 10K 100K 1MOperation frequency (Hz)
Capacity (VA)
Electric tractionHV.DC
UPS
Motor control
Robot, Welding machine
Auto
SwitchingPower supply
VCR/DVD Power supply for audio
Refrigerator
Washing machine
Air conditionerMicrowave
GTO
IGBTs MOSFET Modules
HVIC & PIC MOSFET
Thyristor
TRIAC
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Increasing Importance of Power Electronics in Energy Management
Total Energy Generated
1997 : 40%
2010 : 80%
Motor control - 55%Computers - 4%Lighting - 21%Other - 20%
Power Electronic Converter
Converter Technology is Driven by Devices
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Power Management Market• Total semiconductor market in 2000 - $204b
– 5% Power discretes - $10b; CAGR 28%• Thyristors – 8%; $0.8b• Diodes – 23%; $2.3b• Power Transistors – 69%; $6.9b
– 3% Power Management ICs - $6b; CAGR 61%; 20% of total analogue IC market
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Market Share
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Application areas• Two Main Areas of Growth
– IT, communications, computers – DC/DC
– Motion control - DC/AC
• Both are driven by improvements in devices and device technology
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2. Basics of Power DevicesThe ideal power device:
1. When on – zero resistance2. When off – support infinite voltage3. Switch between on and off (and vice-versa) in zero time4. Zero Power dissipation5. Small, light and cheap!
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Blocking capability
P+ N-W
Area = Voltage supported ≈ W • Emax
Emax
x
|E|
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Avalanche Breakdown Voltage and Depletion Region Thickness
Doping Concentration (cm-3)
1013 1014 1015 1016 1017
V BR
- B
reak
dow
n Vo
ltage
(V)
100
101
102
103
104
WB
R - Depletion w
idth (µ m)
100
101
102
103
104
NOTE: Maximum VBR for silicon is approximately 10kV
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Junction Termination• In real structures the pn- junction will need
terminate at some point – Thyristor/GTO - Edge of Wafer – MOSFET/IGBT - Edge of Chip or device
P+
N-
Crowding of field lines – maximum field
Junction breaks down here
Ideal 1-D Breakdown
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• Tight radius of curvature gives largest fields
• Without proper termination may get < 50% of abrupt junction breakdown voltage
• Termination is used to add extra charge on the surface to spread out the field lines
• Usual techniques• Floating rings• Field Plates• Junction Termination Extension (JTE)• SIPOS, DLC – Very high voltage devices
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Floating Rings
P+
N-
Depletion Boundary
+VDD
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On-state and Switching losses
time
I,V
OFF TURN-ON ON TURN-OFF OFF
tturn-on ton ton
ttail
dtdI dt
dVRMI
tailI
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Bipolar Devices• A bipolar device is defined as one in which both electrons and
holes take part in the current conduction process.
• Bipolar operation is essential in all high voltage devices (>800V)
• Bipolar operation is much slower than Unipolar, hence devices based on this tend to be used at lower frequencies.
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Base Width (microns)
0 20 40 60 80 100
Exce
ss C
arrie
r Con
cent
ratio
n (x
1017
cm-3
)
0
1
2
3
4
5
6
0µs
0.502µs
0.632µs
0.852µs
1.122µs
1.305µs
1.519µs
Bipolar switching Devices
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Recovery DefinitionsCurrent
trr
Soft
SnappyVoltage
time
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Diode Structures
p+ p+
Schottky
n-n-
n+ n+
PiN MPSMerged Pin Schottky
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Thyristor Structures
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Terminal Characteristics
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Gate Turn-off Thyristors (GTO)
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DMOS
N- epitaxial layer
P
Drain
N+
Source
Gate
P+
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Cross sectional view of HEXFET
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Comparison of Structures DMOS Structure Trench Structure
Gate Gate Oxide
n n
P+
n+
pP+
n+ n+
P+
n+
pP+
SourceGateSource
Drain Drain
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Trend in low voltage MOSFET technology
Gen 5
Gen 3
Source
Drain Drain
Poly GateCVD Oxide
P+P P
N+ N+
Super D2pak 20mm2
1.2 Mcells/in2 trench
8 mm2D-Pak
3.7 Mcells/in2 trench
Gen 10.5
Gen 73.5 mm2Micro8
13 Mcells/in2 trench
Micro6 1.5 mm2> 112Mcells/in2 trench
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Trench Road-map (30V)
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On-State Resistance
N- epitaxial layer
Gate
Source
Rdrift
Rjfet
Rsub
RaRchanRsource
Rcontact
Rcontact
Drain
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Charge Compensation (COOLMOS)
p pn+ n+
Source
n+
pp n
OxideGate
Drain
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Charge Compensation (COOLMOS)Gate
n+ n+
n+
pp
Lateral depletion region
Source
Drain
600V, 40A/cm2
Reduce Repi to 20%
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Compensation balancing act
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Trend in 400 – 600V FET technologyGen 3
Gen 6
Gen 9
TO-247
TO-220
Poly Gate
N
N–
PN+
Source
P+N+
P N
N–
CVD Oxide
NN–
NN–
P+
P
P+
PColumnallowsuse ofheavierN-type
doping tolowerRDS(on)
N N
40mm2
25 mm2
High density planar process
10 mm2D-Pak
3x RDS(on) reductionHigh conductivity drift region
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CoolMOS performance comparison
Note: Patent filed by Professor XB Chen!
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IGBT
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The IGBT equivalent circuit
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PT & NPT IGBT structures
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Trench IGBT Layout- Stripe or Hex ?
Hexagonal IGBTHexagonal IGBT
Stripe IGBTStripe IGBT
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The Hexagonal Trench Structure
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Trench IGBT Showing Active Trench
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The Injection Enhanced Gate Transistor (IEGT)
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Power Electronics Systems
PowerProcessing
Unit
Controller
Load
PowerOutput
PowerInput
Reference
SourceACDC
ACDC
AC-ACAC-DCDC-ACDC-DC
Changes any electrical powersource to any desired form
voltage, current, and frequencyoutput
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Power Electronic CircuitsThe power electronic circuits can be classified into the following types:
– AC-DC converters (controlled and uncontrolled rectifiers)– DC-DC converters (dc choppers)– DC-AC converters (inverters)– AC-AC converters (ac voltage regulators)
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DC-DC Converter TopologiesDC-DC Converters
Non-isolated Isolated
Boost Asymmetric SymmetricCuk
Buck Push-Pull
Half bridge
Full bridge
Flyback Forward
Single Double
Single Double
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Automotive
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Advanced SynQor Quarter-Brick
•Ultra high efficiency, up to 91% at 3.3Vout
•High current output, up to 40 amps
•Industry standard size (1.45 x 2.3) and pin out
•Low profile, only 0.4" (10.2mm) high
•Low weight, 1.2 oz. (34g)
•No heatsink, baseplate or potting materials required
•Available in 48Vin and 24Vin
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Synchronous Rectification
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CPU Supply Specs
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Synchronous Buck Circuit
Control
L
C
Q1
Q2Vin Vo
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DC-AC Conversion (Inversion)
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LTT Application in HVDC System
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– Over 50% of electricity is consumed by motors– Domestic (Washing machine, Refrigerators, air conditioning..)
< 2kW – Factory Automation – 100kw – MW
– Simple on/off wastes up to 50%
64%
60%
60%
% Savings
33.1B kWHr
930kWHr55.6MWashing Machine
14.2B kWHr
750kWHr31.5MAir Conditioning
32.7B kWHr
700kWHr77.8MFridge/Freezer
PowerSavings
Ave power consumption
Units/yrApplication
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PM SM
GEN
Active rectifier controller
Inverter drivercontroller
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IPM
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PWM VSI
T im e
C u r re n t
V o lta g e
S im p lif ie d d ia g ra m s h o w in g th e pu ls e w id th m o d u la te d o u tp u t fro m a n in v e rte r d r iv e .
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Functional blocks in inverter
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Devices and Isolations for PICs
Smart Power IC
Leakage CurrentLogic CircuitPower Transistor
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Devices and Isolations for PICs
Power Transistor Logic Circuit
Smart Power IC
Isolation
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A High Current PIC Process with Dense CMOS and Power Switch
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Cross-Section of a High Current PIC Process Incorporating Trench DMOS as the Power Switch
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A Variable Frequency Electronic Drive for a 250 - 1kW Rated Electric Motor
3 phase output from the single phase AC mains
3 phase inverter
Full bridge rectifier
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Power Integrated Circuit for Motor Control Marketed by Hitachi (only Available in Japan)
Features: 250V, 1A
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Packaging• What are the key functions of an electronic
package?
3. Remove heat
1. Connect
2. Protect
Current
Heat
Voltage
Moisture
Provide Electrical IsolationSemiconductor
device (e.g MOSFET)
ContaminantsGate/Base
Control ICProvide mechanical support for chip
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power electronic package• Plastic encapsulated package
– TO-247
Leads
WirebondsWirebonds
Copper headerto remove heat
Legs
Encapsulant
Power die
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Packages definedExamples of IC packaging technology
BGA:- Ball grid array CSP- Chip Scale Package
Flip ChipWLP-Wafer level package
Strong focus on high I/O count, space saving and low inductance packaging
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Chip to Footprint ratio for SMD and through hole packages
TO-2
47AC
TO-2
47 F
ull P
ak
TO-2
20AB
TO-2
20 F
ull P
ak
Flip
FET
Dire
ctFE
T
Sing
le S
O-8
Dua
l SO
-8
SOT-
89
Mic
ro 3
SOT-
223
D2-
Pak
D-P
ak
Mic
ro 6
Mic
ro 8
Supe
r-220
Supe
r 247
I-Pak
0.0
20.0
40.0
60.0
80.0
100.0
Package type
Chi
p to
foot
prin
t rat
io [%
]
RED = Though hole deviceBlue = Surface mount device
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12. Construction of Power Semiconductors
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Silicon Carbide Power Silicon Carbide Power Devices Devices
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10
100
1K
10K
100K
1M
10M
100M
Electric traction
UPS
Auto
SwitchingPower supply
VCR/DVD Power supply for audio
Washing machine
GTO
IGBTs MOSFET Modules
HVIC & PIC MOSFET
TRIAC
HV.DC Motor control
Capacity (VA)
Robot, Welding machine
Thyristor
Refrigerator
Air conditionerMicrowave
10 100 1K 10K 100K 1MOperation frequency (Hz)
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Electric tractionHV.DC
UPS
Motor control
Robot, Welding machine
Auto
SwitchingPower supply
VCR/DVD Power supply for audio
Refrigerator
Washing machine
Air conditionerMicrowave
GTO
IGBTs MOSFET Modules
HVIC & PIC MOSFET
Thyristor
TRIAC
SILICON LIMIT
Capacity (VA)
100M
10M
1M
100K
10K
1K
100
10
10 100 1K 10K 100K 1MOperation frequency (Hz)
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10
100
1K
10K
100K
1M
10M
100M
Electric traction
UPS
Auto
SwitchingPower supply
VCR/DVD Power supply for audio
Washing machine
GTO
IGBTs MOSFET Modules
HVIC & PIC MOSFET
TRIAC
SILICON CARBIDE
HV.DC Motor control
Capacity (VA)
Robot, Welding machine
Thyristor
Refrigerator
Air conditionerMicrowave
10 100 1K 10K 100K 1MOperation frequency (Hz)
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SiC Applications
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On-state limit for Switching Devices
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Trend for power density in power converters
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Power Systems in the Future
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What is Silicon Carbide ?• Silicon Carbide (SiC) exists in several hundred forms known as
polytypes.• Each silicon atom bonds to four nearest-neighbor carbon atoms,
and vice versa.
Si Atoms
C Atoms
0.189nm
0.063nm
19.5°
<0001>
<0001>
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SiC Polytypes
• Crystal structure dictates the polytype or form of SiC.
• Difference between polytypes is the stacking order between double layers of carbon and silicon atoms.
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Alternatives to Silicon Technology
• Wide Band Gap Semiconductors• Stronger Atomic Bonds• Larger Breakdown voltage• Lower intrinsic carrier concentration
• GaN - poor thermal conductivity, no native oxide, high frequency?
• C (diamond) - No established technology at present– Other WBG materials like Diamond and III/V nitrides suffer from the lack of
suitable substrates for epitaxial growth.
• SiC - Relatively mature technology, native oxide, blue light
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Properties of SiC
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STM images
• STM studies on treated surfaces
500 nm5µm x 5µm UHV cleaned SiC surface that had been WOS
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Surface Studies - AFM
SiC Surface After Removal of Wet Thermal SiO2
RMS Surface Roughness23.4Å
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Surface Studies - AFM
SiC Surface After Removal of SSO Thermal SiO2
RMS Surface Roughness11.1Å
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SiC Applications – Devices
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ESCAPEE Diodes
• 3 Different sized diodes• 2x2mm largest• 12%, 74% and 86% yield• 1.2kV rated • Diced ready for mounting
ESCAPEE Diode Die on Foil
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ESCAPEE Diodes - fabricated
Large area 1.6x1.6 mm2
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State of the art SiC DevicesSchottky Diode Switching
Characteristics
Silicon Ultrafast
SiC Schottky
10A
0A
• Lack of reverse recovery.
• Minimized switching losses make high pulse frequencies possible
• Higher efficiency, smaller equipment size
•1200V 2mmx2mm SiC Schottky diode switching characteristics. •1200V 8A Silicon ultrafast diode waveform shown for reference.
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10kV PiN Diode with low stacking Fault density – Cree EPE2003
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10kV PiN diode characteristics
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State of the Art SiC DevicesSchottky Barrier Diodes
Commercial diodes600V and 20A , 1.2kV and 10A ratings SiCED has realized blocking voltages up to 1700 V. Expected to extend this to 3300 V Expected to dominate market for blocking voltages below 3000VCapable of replacing Si junction rectifiers in medium power motor drive electronics modules
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Trench MOSFETOxide growth rate slower on trench bottom
Maximum Oxide field 2MV/cm limits field in SiC to 0.8MV/cm ie 0.2 of critical value
Can implant P+ layer at bottom of trench to reduce field
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MOSFET test structureN-MOSFET on 4H-SiC
0 1 2 3 4 50
50
100
150
200
250
300
350
400
W=150µmL=4µm
Dra
in-S
ourc
e C
urre
nt [µ
A]
Drain-Source Bias [V]
Vg=15V
Vg=12V
Vg=9V
Vg=6VVg=3V
0 5 10 150
1
2
3
4
5
6
L=24um Vds=1VL=16um Vds=1V
L=12um Vds=1VL=8um Vds=1V
L=4um Vds=1V
Eff.
Mob
ility
µef
f [cm
2 V-1s-1
]
Gate Bias [V]
Gate oxide thickness: 38 nmEffective channel mobility 2 cm2/VsNot rectifying contactReference device.
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E6.pot 96
Science 297 (6 Sept. 2002) p1670
Not only polycrystalline diamond was possible but E6 had developed technology for producing free-standing single crystal CVD diamond with material properties which far exceeded even the most optimistic expectations.
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E6.pot 97
Diamond - the only wide bandgap high mobility material
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Diamond PropertiesSi SiC-4H GaN Diamond
Band gap (eV) 1.1 3.2 3.44 5.5
Breakdown field (MV/cm)
0.3 3 5 10
Electron mobility (cm2/Vs)
1450 900 440 4500
Hole mobility (cm2/Vs) 480 120 200 3800
Thermal conductivity (W/cmk)
1.5 5 1.3 24
Johnson’s Figure of Merit
1 410 280 8200
Keyes’ Figure of Merit 1 5.1 1.8 32
Baligas Figure of Merit 1 290 910 17200
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CVD Diamond CVD Diamond MESFETsMESFETs for Power for Power applicationsapplications
Vs Vg Vd
i-diamond
p-diamond
p+ diamond
p+ diamond
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Conclusions• Power Device Performance is doubling
every 18 months• Power Electronics is Critical for Efficient
energy usage• New Devices and Materials are needed
to maintain this rapid change
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Many Thanks to• Dr Petar Igic, Dr Owen Guy, Dr Li Chen,
Dr. Zhonfu Zhou, Dr. Salah Khanniche plus all other members of the Power Electronics Research Centre