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Power Diodes for Cryogenic Operation PESC 2003 Acapulco, Mexico, June 2003.
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Transcript of Power Diodes for Cryogenic Operation PESC 2003 Acapulco, Mexico, June 2003.
Power Diodes for Cryogenic
Operation
PESC 2003
Acapulco, Mexico, June 2003
2
R. R. Ward, W. J. Dawson, L. Zhu, R. K. Kirschman
GPD Optoelectronics Corp., Salem, New Hampshire
O. Mueller, M. J. Hennessy, E. K. Mueller
LTE–Low Temperature Electronics, Ballston Lake, New
York
R. L. Patterson, J. E. Dickman
NASA Glenn Research Center, Cleveland, Ohio
A. Hammoud
Dynacs Corp., Cleveland, Ohio
Motivation
4
Cryogenic Power Electronics
• Semiconductor devices (diodes and transistors)
• For Power Management and Actuator Control
• For use down to 30 K = –243°C (and lower)
• Supported by NASA Glenn Research Center
“Very Little of the Solar System
(or the Universe) Is at
Room Temperature.”
6
Solar System Temperatures
Room TemperatureRoom Temperature
7
ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, asteroids,
interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
8
ApplicationsDefense, Industry, Commercial
• Medical instruments (MRI)
• Electrical power (superconducting electrical power storage, transmission, distribution)
• Motors/generators (superconducting or cryogenic)
• Magnetic confinement (superconducting or cryogenic)
• High-power amplifiers (cell phone base stations, MRI)
9
ApplicationsDefense, Industry, Commercial
• Medical instruments (MRI)
• Electrical power (superconducting electrical power storage, transmission, distribution)
• Motors/generators (superconducting or cryogenic)
• Magnetic confinement (superconducting or cryogenic)
• High-power amplifiers (cell phone base stations, MRI)
• Reasons: Improved efficiency and reliability, reduced size and mass; many systems already incorporate cryogenics
10
ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
11
Spacecraft
COLD/HOT ENVIRONMENT
CONVENTIONAL
ELECTRONICS
HEATING/COOLINGSYSTEM
TEMPERATURECONTROL
THERMAL INSULATION
(HEAT STORAGE)
12
Spacecraft
COLD/HOT ENVIRONMENT
CONVENTIONAL
ELECTRONICS
HEATING/COOLINGSYSTEM
TEMPERATURECONTROL
1 3
2
4
4
THERMAL INSULATION
(HEAT STORAGE)
13
Spacecraft
LOW/HIGH TEMP
ELECTRONICS
COLD/HOT ENVIRONMENT
14
“Cold” Spacecraft
• Eliminate heating, thermal control, isolation
• Reduce power, weight, size, cost, complexity
• Improve overall reliability
• Reduce disruption of environment
• Increase mission duration & capability
15
ApplicationsSpace
• Solar-system exploration
– Reasons: Cold environment, reduced power
– For: Outer planets, cold satellites, interstellar
• Scientific spacecraft/observatories
– Reason: Cryogenic sensors and optics
– For: Motors and actuators
Why use Ge?
17
Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si)
18
Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Ge can operate at lower T
19
Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
20
Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
• Ge has advantages over other semiconductor materials
Higher mobility than Si (especially at low temp)
– Lower p- n junction forward voltage than Si or III-Vs
21
Mobility Comparison
Data from Madelung, 1991, pp. 18,34.
0
1 104
2 104
3 104
4 104
5 104
80 K 300 K
n-Sip-SiFn-Gep-Ge
np
p
p
p nn
n
Si
Si
Ge
Ge
22
Why Ge Devices?
• Ea,d (Ge) < Ea,d (Si) Lower T for Ge
• Experience with Ge JFETs at cryogenic temperatures
• Ge has advantages over other semiconductor materials
– Higher mobility than Si (especially at low temp)
Lower p- n junction forward voltage than Si or III-Vs
23
P-N Junction (Diode) Forward Voltage
0
0.5
1
1.5
0.2 A1 A
2 A4 A
0 40 80 120 160 200 240 280 320
Vf vs T Temperature (K)
Ge
Si
24
Why Ge Devices ? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower) Diodes can operate to deep cryogenic temperatures
– JFETs can operate to deep cryogenic temperatures (down to few K)
– Bipolar transistors can operate to deep cryogenic temperatures
25
Commercial 15-A Ge Diode
0 0.2 0.4 0.6 0.8 1
R7u 4/100/80
R10d 4/100/80
N5u
N6d
M2u
M5d
VH-VL up
VH-VL down
K7d
K10u
VH-VL up
VH-VL down
H13u
H14d0
1
2
3
4
Voltage (V)
77 KRT
40 K 20 K
4 K
26
Commercial 15-A Ge Diode
-0.02
-0.01
0
Irev 2(A) downIrev3 (A) upIrev3 (A) upIrev5 (A) downIrev3 (A) downIrev4 (A) upIrev4 (A) downIrev5 (A) upIrev2 (A) upIrev3 (A) down
-100 -80 -60 -40 -20 0
Voltage (V)
4 K
40 K
20 K
77 K
300 K
27
Commercial 60-A Ge Diode
0 0.2 0.4 0.6 0.8 1
R2uR3dN10uN11dM12uM13dK18uK19dH21uH21uH22dH23u
0
1
2
3
4
Voltage (V)
77 KRT
40 K
20 K 4 K
28
Commercial 60-A Ge Diode
-0.02
-0.01
0
Rrev4u (A)Rrev5d (A)Rrev6u (A)Rrev7d (A)Nrev8u (A)Nrev9d (A)Mrev14u (A) Mrev15d (A)Krev16u (A)Krev17d (A)Hrev24u (A)Hrev25d (A)
-100 -80 -60 -40 -20 0
Voltage (V)
4 K
40 K
20 K
77 K
300 K
29
Why Ge Devices? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower)– Diodes can operate to deep cryogenic temperatures
JFETs can operate to deep cryogenic temperatures (down to few K)
– Bipolar transistors can operate to deep cryogenic temperatures
30
Field-Effect Transistor Comparison
0
0.5
1
1.5
2
2.5
3
3.5
0 50 100 150 200 250 300
Temperature, T (K)
Si JFET (U310)
Ge JFET
Si JFET (2N4416)
I (300)dss
dss
I (T)
GaAs MESFET (3SK121)
31
Ge JFET at 20 K (–253ºC)
32
Ge MISFET at 4 K (–273ºC)
33
Why Ge Devices? (cont’d)
• Applications require operation to 30 - 40 K range
• Ge devices of all types can operate to low cryogenic temperatures (~ 20 K or lower)– Diodes can operate to deep cryogenic temperatures
– JFETs can operate to deep cryogenic temperatures (down to few K)
Bipolar transistors can operate to deep cryogenic temperatures (down to ~20 K or lower)
34
Ge Bipolar Junction Transistor
Zero: upper right Horiz: 0.5 V/div Vert: 1 mA/divIB: 0.02 mA/step at RT, 0.1 mA/step at 4 K
300 K 4 K
35
Ge Bipolar Junction Transistor
-100
-80
-60
-40
-20
0-2-1.5-1-0.50
IB = -0.5 mA
2N964-3-1229A,B,C
Collector-emitter voltage, V (V)CE
IB = -2.5 mA
IB = 0
20 K
36
Bipolar Junction Transistor Comparison
1
10
100
1000
01020304050
Temperature -1 (1000/K)
SiGe
20 30 50 80 300120
Temperature (K)
Results for New Ge Diodes
38
New Planar Ge Cryo Power Diodes
N -
N+ implant
P+ implant Metal
Metal
Guard ring
39
New Ge Cryo Power Diodes - Forward
0 0.2 0.4 0.6 0.8 10
2
4
6
8
10
12
Forward Voltage (V)
77 K300 K
40
New Ge Cryo Power Diodes - Forward
0 0.2 0.4 0.6 0.8 10
1
2
3
4
Forward Voltage (V)
120 K
300 K
40 K
20 K
4 K80 K
41
Ge Power Diodes - Forward Voltage
0
0.5
1
1.5
0.2 A
0.2 A Si
Vf 0.2 A
Vf 0.2 A
Vf (0.2 A)
Vf (0.2 A)
0 40 80 120 160 200 240 280 320
Temperature (K)
Commercial Ge power diodes
Si power diodes
Ge cryo power diodes (2 thick, 2 thin)
If = 0.2 A
42
Ge Power Diodes - Forward Voltage
0
0.5
1
1.5
2
0 40 80 120 160 200 240 280 320
Temperature (K)
Commercial Ge power diodes
Si power diodes
Ge cryo power diodes (thick)
If = 4 A
Ge cryo power diodes (thick)
Ge cryo power diodes (thin)
43
Ge Power Diodes - Reverse Breakdown
0
100
200
300
400
500
600
0 50 100 150 200 250 300
Temperature (K)
18-1-B2b
18-1-D1d
12-1-Aa
Commercial Ge power diodes
44
Ge Power Diodes - Reverse Recovery
-12
-8
-4
0
4
8
12
0 200 400 600 800 1000 1200
Time (ns)
77 K
300 K
18-1-AaJune 2003
45
Ge Power Diodes - Reverse Recovery
-12
-8
-4
0
4
8
12
0 200 400 600 800 1000 1200
Time (ns)
77 K
300 K
18-1-B1cJune 2003
46
Ge Power Diodes - Reverse Recovery
0
1
2
3
4
0 2 4 6 8 10 12
Forward Diode Current (A)
77 K
300 K
47
Ge Power Diodes - Reverse Recovery
-12
-8
-4
0
4
8
12
0 200 400 600 800 1000 1200
Time (ns)
77 K
300 K
30-1-C1bJune 2003
48
Ge Power Diodes - Reverse Recovery
-12
-8
-4
0
4
8
12
0 200 400 600 800 1000 1200
Time (ns)
77 K
300 K
30-2-AaJune 2003
49
Summary
• Cryogenic power electronics is needed
for spacecraft going to cold environments
and for space observatories
• Temperatures may be as low as ~30 - 40 K
• We have characterized Ge devices – diodes,
JFETs, and bipolars – at cryogenic temperatures
• Ge devices can operate to deep cryogenic
temperatures – to 20 K and as low as 4 K
• We are developing Ge diodes specifically for
cryogenic applications