Penn ESE370 Fall2011 -- DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital...
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Transcript of Penn ESE370 Fall2011 -- DeHon 1 ESE370: Circuit-Level Modeling, Design, and Optimization for Digital...
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Penn ESE370 Fall2011 -- DeHon1
ESE370:Circuit-Level
Modeling, Design, and Optimization for Digital Systems
Day 28: November 16, 2011
Memory Periphery
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Today
• Decode
• Sensing
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Memory Bank
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Row Select
• Logically a big AND– May include an enable for timing in
synchronous
Penn ESE370 Fall2011 -- DeHon4How many transistors (per bit)?
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How tall is a row?
• Side length for cell of size:– 1000 2
– 600 2
– 100 2
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6
How tall is an AND?
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2
66
3
2
2
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Row Select
• How can we do better?– Area– Delay– Match to pitch of
memory row
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Row Select
• Compute inversions outside array– Just AND appropriate line (bit or /bit)
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Row Select
• Share common terms
• Multi-level decode
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Row Select
• Same number of lines
• Half as many AND inputsPenn ESE370 Fall2011 -- DeHon
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Row Select: Precharge NAND
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Row Select: Precharge NOR
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Sensing
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SRAM Memory bit
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Simulation Waccess=20
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Sense Small Swings
• What do we have to worry about?
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Sense Small Swings
• Variation
• Common mode noise
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Differential Sense Amp
• Goal:– Reject
common shift
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Differential Sense Amp
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What doe this do?
• Output when:– In=Gnd?– In=Vdd?– Transfer curve?
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“Inverter”
• Input high– Ratioed like
grounded P
• Input low– Pulls itself up
– Until Vdd-VTP
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DC Transfer Function
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Differential Sense Amp
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Diffamp Transfer Function
• in=/in, looks like “inverter”
• Deliberately low gainin mid region
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Differential Sense Amp
• “Inverter” output controls PMOS for second inverter
• Sets PMOS operating point– current
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Differential Sense Amp
• View:– Current mirror– Biases where
inverter operating
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Differential Sense Amp
• View:– adjusting the pullup
load resistance– Changing the trip
point for “inverter”
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DC Transfer /in with in=0.5V
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DC Transfer Various in
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After Inverter
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Ramp 50mV Offset
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Closeup 50mV Offset
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Connect to Column
• Equalize lines during precharge
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Singled-Ended Read
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5T SRAM
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Single Ended
• Given same problems– How sense small swing on single-ended
case?
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Single Ended
• Need reference to compare against
• Want to look just like bit line
• Equalize with bit line
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Split Bit Line
• Split bit-line in half
• Precharge/equalize both
• Word in only one half– Only it switches
• Amplify difference
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Open Bit Line Architecture
• For 1T DRAM
• Add dummy cells
• Charge dummy cells to Vdd/2
• “read” dummy in reference half
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Memory Bank
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Energy
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Single Port Memory
• What fraction is involved in a read/write?
• What are most cells doing on a cycle?
• Reads are slow– Cycles long lots of time to leak
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ITRS 2009 45nm
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High Performance
Low Power
Isd,leak 100nA/m 50pA/m
Isd,sat 1200 A/m 560A/m
Cg,total 1fF/m 0.91fF/m
Vth 285mV 585mV
C0 = 0.045m × Cg,total
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High Power Process
• V=1V d=1000 =0.5 Waccess=Wbuf=2
• Full swing for simplicity
• Csc = 0
– (just for simplicity, typically <Cload)
• BL: Cload=1000C0 ≈ 45 fF = 45×10-15F
• WN = 2 Ileak = 9×10-9 A
• P= (45×10-15) freq + 1000×9×10-9 W
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Relative Power
• P= (45×10-15) freq + 1000×9×10-9 W• P= (4.5×10-14) freq + 9×10-6 W
• Crossover freq<200MHz• How partial swing on bit line change?
Reduce dynamic energyIncrease percentage in leakage energyReduce crossover frequency
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Consequence
• Leakage energy can dominate in large memories
• Care about low operating (or stand-by) power
• Use process or transistors with high Vth
– Reduce leakage at expense of speed
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Admin
• Project– Should Have memory cell– Add drivers and amps
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Idea
• Minimize area of repeated cell• Compensate with periphery
– Amplification (restoration)
• Match periphery pitch to cell row/column– Decode– Sensing– Writer Drivers
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