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Transcript of pd design 9
8/3/2019 pd design 9
http://slidepdf.com/reader/full/pd-design-9 1/17
RV-VLSI CONFIDENTIAL
Objective
●
Perform key design for manufacturing steps required after the signalrouting is complete:
* Antenna fixing
* Metal filling
* Metal slotting
* Adding redundant contacts
* Wire spreading
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Design status at start of DFM phase
• Standard cells are placed
• Clock tree and HFN buffers are placed
• All clock, signal and P/G nets have been completely routed
• All route related optimizations are completed:
– Setup and Hold time: met
– Maximum capacitance limits - met
– Maximum signal transition times – met
– Design is DRC clean
Design for
manufacturability
Routing
CTS
Placement
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Manufacturing issues
• Astro can address several issues to increase manufacturing yield:
– Gate Oxide integrity antenna fixing
– Via resistance and reliability extra contacts
– Random Particle defectWire spreading
– Metal erosion metal slotting
– Metal liftoff metal slotting
– Metal Over-Etching metal fill
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Gate Oxide Integrity
• Metal wires (antennae) placed in an EM field generate voltage gradients.
• During the metal each stage, strong EM fields are used to stimulate the plasma etchant.
• Resultant voltage gradients at MOSFET gates can damage the thin oxide.
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RV-VLSI CONFIDENTIAL
Antenna Rules
• As length of wire increases during processing , the voltage stressing the gate oxideincreases.
• Antenna rules define acceptable length of wires.
*Antenna Ratios:
Area of metal connected to Gate
Combined Area of Gate
poly
metal2
metal1
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RV-VLSI CONFIDENTIAL
Metal Splitting Or layer Jumping
• Before Layer Jumping
metal3
M1blockage
M3 blockage
metal1
Unacceptable antenna area
Gate
poly
Driver
diffusion
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RV-VLSI CONFIDENTIAL
Metal Splitting Or layer Jumping
• After Layer Jumping, to meet Antenna rules
metal3
M1blockage
M3 blockage
metal1
Acceptable antenna area
Gate
poly
Driver
diffusion
metal3
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Inserting Diodes
• Before Inserting Diodesmetal3
metal1
Diode Inhibits large voltage swings
on metal tracks
metal3
metal1
During etch phase, the diode clamps
the voltage swings.
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Antenna violations fixing flow
Insert Antenna Diodes
for all remaining
violations
Remaining Design for
Manufacturability
Search & Repair
Set antenna rules
Route DRC
violations?
No
Yes
Routing & related
optimizations
Routing & related
optimizations
Routing & related
optimizations
Routing & related
optimizations
Routing & related
optimizations
Search & Repair
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RV-VLSI CONFIDENTIAL
Via resistance and reliability
• Replacing one via with multiple vias can improve yield & timing (series R reduction)
• Astro inserts multiple vias without rerouting
extra
vias
added
8/3/2019 pd design 9
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RV-VLSI CONFIDENTIAL
Random Particle Defects
• Random missing or extra material causes opens or shorts during the fabrication process.
* Wires at minimum spacing are most susceptible to shorts
* Minimum-width wires are most susceptible to opens
Conductive defects within critical
area-causing shorts
Conductive defects outside critical
area-causing no shorts
Non-conductive defects within
critical area-causing opens
Non-conductive defects outside
critical area-causing no opens
Critical
Areas
metal3
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RV-VLSI CONFIDENTIAL
Wire Spreading + Widening
• Spread wires to reduce short critical area
- push routes off-track by half pitch
- will not push “frozen” nets
• Widens wires to reduce open critical area
Wire Tracks
Spreading off-Track
Widening
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RV-VLSI CONFIDENTIAL
Metal Erosion
• The wafer is made flat (planarized) by a process called Chemical Mechanical Polishing(CMP)
• Metals are mechanically softer than dielectrics:
* CMP leaves metal tops with a concave shape -dishing
* the wider the metal the more pronounced the dishing
* Wide traces with little intervening dielectric and can become quite thin –
dishing
this severe is called erosion.
• Process rules specify maximum metal density per layer to minimize erosion.
Try to get pic for this
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RV-VLSI CONFIDENTIAL
Metal Littoff
• Conductors and dielectrics have different coefficients of thermal expansion:
- Stress builts up with temperature cycling
- Metals can delaminate (litoff) with time
- Wide metal traces are more vulnerable than narrow ones
• Maximum metal density rules also address this issue.
Dielectric
Metal Thermal Expansion
Dielectric Thermal Expansion
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RV-VLSI CONFIDENTIAL
Metal Slotting
• Slotting wide wires reduces the metal density
• Slots minimizes stresses buildup, reducing litoff tendency
• Primarily used on Power and Ground traces:
- Can apply to any other net if wide enough
• Slotting parameters can be set layer by layer
Slide clearance OpenSlot Slide Space
Width
EndSpace Lenght
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RV-VLSI CONFIDENTIAL
Metal Over-Etching
• A narrow metal wire separated from other metal recieves a higher density of etchant thanclosely spaced wires
• The narrow metal can get over-etched
• Minimum metal density rules are used to control this.
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RV-VLSI CONFIDENTIAL
Metal fill
• Fills empty tracks with metal shapes to meet the minimum metal density rules
• Uses up most of the remaining routing resource:
– No further routing or antenna fixes can be done