pd design 9

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RV-VLSI CONFIDENTIAL Objective Perform key design for manufacturing steps required after the signal routing is complete: * Antenna fixing * Metal filling * Metal slotting * Adding redundant contacts * Wire spreading

Transcript of pd design 9

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RV-VLSI CONFIDENTIAL

Objective

Perform key design for manufacturing steps required after the signalrouting is complete:

* Antenna fixing

* Metal filling

* Metal slotting

* Adding redundant contacts

* Wire spreading

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RV-VLSI CONFIDENTIAL

Design status at start of DFM phase

• Standard cells are placed

• Clock tree and HFN buffers are placed

• All clock, signal and P/G nets have been completely routed

• All route related optimizations are completed:

– Setup and Hold time: met

– Maximum capacitance limits - met

– Maximum signal transition times – met

– Design is DRC clean

Design for

manufacturability

Routing

CTS

Placement

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Manufacturing issues

• Astro can address several issues to increase manufacturing yield:

– Gate Oxide integrity antenna fixing

– Via resistance and reliability extra contacts

– Random Particle defectWire spreading

– Metal erosion metal slotting

– Metal liftoff  metal slotting

– Metal Over-Etching metal fill

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Gate Oxide Integrity

• Metal wires (antennae) placed in an EM field generate voltage gradients.

• During the metal each stage, strong EM fields are used to stimulate the plasma etchant.

• Resultant voltage gradients at MOSFET gates can damage the thin oxide.

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Antenna Rules

• As length of wire increases during processing , the voltage stressing the gate oxideincreases.

• Antenna rules define acceptable length of wires.

*Antenna Ratios:

Area of metal connected to Gate

Combined Area of Gate

poly

metal2

metal1

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Metal Splitting Or layer Jumping

• Before Layer Jumping

metal3

M1blockage

M3 blockage

metal1

Unacceptable antenna area

Gate

poly

Driver

diffusion

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Metal Splitting Or layer Jumping

• After Layer Jumping, to meet Antenna rules

metal3

M1blockage

M3 blockage

metal1

Acceptable antenna area

Gate

poly

Driver

diffusion

metal3

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Inserting Diodes

• Before Inserting Diodesmetal3

metal1

Diode Inhibits large voltage swings

on metal tracks

metal3

metal1

During etch phase, the diode clamps

the voltage swings.

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Antenna violations fixing flow

Insert Antenna Diodes

for all remaining

violations

Remaining Design for

Manufacturability

Search & Repair

Set antenna rules

Route DRC

violations?

No

Yes

Routing & related

optimizations

Routing & related

optimizations

Routing & related

optimizations

Routing & related

optimizations

Routing & related

optimizations

Search & Repair

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Via resistance and reliability

• Replacing one via with multiple vias can improve yield & timing (series R reduction)

• Astro inserts multiple vias without rerouting

extra

vias

added

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Random Particle Defects

• Random missing or extra material causes opens or shorts during the fabrication process.

* Wires at minimum spacing are most susceptible to shorts

* Minimum-width wires are most susceptible to opens

Conductive defects within critical

area-causing shorts

Conductive defects outside critical

area-causing no shorts

Non-conductive defects within

critical area-causing opens

Non-conductive defects outside

critical area-causing no opens

Critical

Areas

metal3

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Wire Spreading + Widening

• Spread wires to reduce short critical area

- push routes off-track by half pitch

- will not push “frozen” nets

• Widens wires to reduce open critical area

Wire Tracks

Spreading off-Track 

Widening

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Metal Erosion

• The wafer is made flat (planarized) by a process called Chemical Mechanical Polishing(CMP)

• Metals are mechanically softer than dielectrics:

* CMP leaves metal tops with a concave shape -dishing

* the wider the metal the more pronounced the dishing

* Wide traces with little intervening dielectric and can become quite thin –

dishing

this severe is called erosion.

• Process rules specify maximum metal density per layer to minimize erosion.

Try to get pic for this

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Metal Littoff

• Conductors and dielectrics have different coefficients of thermal expansion:

- Stress builts up with temperature cycling

- Metals can delaminate (litoff) with time

- Wide metal traces are more vulnerable than narrow ones

• Maximum metal density rules also address this issue.

Dielectric

Metal Thermal Expansion

Dielectric Thermal Expansion

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Metal Slotting

• Slotting wide wires reduces the metal density

• Slots minimizes stresses buildup, reducing litoff tendency

• Primarily used on Power and Ground traces:

- Can apply to any other net if wide enough

• Slotting parameters can be set layer by layer

Slide clearance OpenSlot Slide Space

Width

EndSpace Lenght

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Metal Over-Etching

• A narrow metal wire separated from other metal recieves a higher density of etchant thanclosely spaced wires

• The narrow metal can get over-etched

• Minimum metal density rules are used to control this.

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Metal fill

• Fills empty tracks with metal shapes to meet the minimum metal density rules

• Uses up most of the remaining routing resource:

– No further routing or antenna fixes can be done