Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V...
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Transcript of Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V...
![Page 1: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/1.jpg)
![Page 2: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/2.jpg)
Particle motion in the inversion layerG
S D+n+n
channel inversion layer
(electrons)x
y
z
L
GSE
ground
ground
![Page 3: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/3.jpg)
![Page 4: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/4.jpg)
NMOS -- p type semiconductor – VGS > VT & saturating VDS
DI
DSV
2
DSD n oxide GS TN DS
VWI C V V V
L 2
linear variation
![Page 5: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/5.jpg)
NMOS -- p type semiconductor -- gate voltage VGS > VT – experimental
measurement of parameters (linear)
GV
G
S D+n+n
DI
D n oxide GS TN DSW
I C V V VL
DI
GSV
n oxide DSW
slope C VL
![Page 6: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/6.jpg)
NMOS -- p type semiconductor – VGS > VT & saturating VDS
DI
DSV
2
DSD n oxide GS TN DS
VWI C V V V
L 2
DS GS TNV saturation V V
2GS TND n oxide
V VWI C
L 2
D
DS
dI0
dV n oxide GS TN DS
WC V V V
L
![Page 7: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/7.jpg)
NMOS -- p type semiconductor -- gate voltage VGS > VT – experimental
measurement of parameters (saturation)
GV
G
S D+n+n
DI
2D n oxide GS TNW
I C V V2L
DI
GSV
n oxide GSW
slope C VL
![Page 8: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/8.jpg)
Transient analysis
n nn
q nE qDn xq 0t x
njnq 0t x
D Sn n
0
V V q n nq n qD
L C x xnq 0t x
equation of continuity
conduction diffusion
electric field due to density inhomogeneity
![Page 9: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/9.jpg)
Transient analysis
njnq 0t x
n n nn
j q nE qDx
G T D S0
x qn( x )V( x ) V V V V
L C
D S0
dV 1 q n( x )E V V
dx L C x
![Page 10: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/10.jpg)
Transient analysisD S
n n0
V V q n nq n qD
L C x xnq 0t x
D Sn
2
n 20
n 2
V Vn nq qt L x
q nn
C x nqD 0
x x
![Page 11: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/11.jpg)
Transient analysis
2
n 20D S
n n 2
q nn
C xV Vn n nq q qD 0t L x x x
n
x
![Page 12: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/12.jpg)
NMOS -- p type semiconductor – normal biasing
this is normally
at ground potential
G
S D+n+n
B
source to substrate potential
must cause the PN junction
to be 0 or reverse biased.
![Page 13: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/13.jpg)
![Page 14: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/14.jpg)
Transconductance – non-saturation
Dm
GS
Ig
V
2
DSD n oxide GS T DS
VWI C V V V
L 2
m n oxide DSW
g C VL
![Page 15: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/15.jpg)
Transconductance –saturation
Dm
GS
Ig
V
2GS TD n oxide
V VWI C
L 2
m n oxide GS TW
g C V VL
![Page 16: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/16.jpg)
Electrical circuit model
groundS D
G
ground
in
m gsg V
dsC
gspC gdpCgsC gdC
drsr
+losses in n regionslosses in p region
dsr
gsTC gdTC
parasitic
gsp gdpC &C
![Page 17: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/17.jpg)
Electrical circuit modeling a MOSFET
dsr
G D
S
dr
dsC'
m gsg V
sr
gdTC
gsTC
gsV
'gsV
![Page 18: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/18.jpg)
Electrical circuit modeling a MOSFETlow-frequency
dsr
G D
S
dr
dsC'
m gsg V
sr
gdTC
gsTC
gsV
'gsV
1C
![Page 19: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/19.jpg)
Electrical circuit modeling a MOSFETlow-frequency
G D
S
'm gsg V
gsV
'gsV
1C
dsr
![Page 20: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/20.jpg)
Electrical circuit modeling a MOSFETlow-frequency
G D
S
'm gsg V
sr
gsV
'gsV
1C
gs gs m gs sV V ' ( g V ' )r
![Page 21: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/21.jpg)
Electrical circuit modeling a MOSFEThigh frequency
dsr
G D
S
dr
dsC'
m gsg V
sr
gdTC
gsTC
gsV
'gsV
LR
![Page 22: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/22.jpg)
Electrical circuit modeling a MOSFEThigh frequency
G D
S
'm gsg V
gdTC
gsTC
gsV
'gsV
LR
i gsT gs gdT gs dI j C V j C V V
dm gs gdT d gs
L
Vg V j C V V
R
![Page 23: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/23.jpg)
Electrical circuit modeling a MOSFETgain
G D
S
'm gsg V
gdTC
gsTC
gsV
'gsV
LR
i gsT gs gdT gs dI j C V j C V V
dm gs gdT d gs
L
Vg V j C V V
R
dm gs gdT d gsL
i gsT gs gdT gs d
Vg V j C V VR
I j C V j C V V
![Page 24: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/24.jpg)
Electrical circuit modeling a MOSFETgain
G D
S
'm gsg V
gdTC
gsTC
gsV
'gsV
LR
dm gs gdT d gsL
i gsT gs gdT gs d
Vg V j C V VR
I j C V j C V V
gsT MC C
![Page 25: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/25.jpg)
Frequency limitations
GV
G
S D+n+n
sat
L
v
--
finite transit time
5
1 mm10 s
100 GHz
![Page 26: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/26.jpg)
Ames
![Page 27: Particle motion in the inversion layer NMOS -- p type semiconductor – V GS > V T & saturating V DS.](https://reader035.fdocuments.us/reader035/viewer/2022062409/5697bfa71a28abf838c98e55/html5/thumbnails/27.jpg)
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Simple three-dimensional unit cell
a
b
c