Packaged mm-Wave GaN, GaAs and Si ICs for 5G and ...

Packaged mm-Wave GaN,

GaAs and Si ICs for 5G and

automotive radar

Eric Leclerc – UMS – 1st Nov 2018

All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS

Date / Ref doc

Why heterogenous integration ?

About UMS

Technology portfolio

Design tooling: Cadence / GoldenGate / ADS / ETH

Examples :

24GHz radar sensor 1Tx-2Rx with SiGe and GaAs

24GHz radar sensor 1Tx-4Rx

2W Integrated Front End for 5G with GaN and GaAs

Core chip with SP interface

S band 50W Q-MMIC in DFN

Test and evaluation

Questions?

2

Outline


Date / Ref doc

Many years ago « Monolithic Integration » was considered in RF and mm-Wave industry as a must, an end in itself … but a question

remains open: what is the right unique capable process ? :

Performance

Yield for very large MMIC, handling

…and with no cross-talk…

Considering now these features:

Optimization=> selection of the best technologies for each function. Risk lower.

Good level of isolation

Well managed, controlled and reproducible integration. Flexibility & cost.

Testing, screening of each part, easier job.

Quality of 3D simulations (bond wires)

3

Why heterogeneous integration ?

Devices …. MMIC …. Q-MMIC … Modules …System …

Heterogeneous

integration


Date / Ref doc

Source of RF MMIC solutions:

COTS, ASIC & foundry services

Long heritage of supplying to most demanding applications including for

our mother companies: Airbus and Thales.

Industrial facilities and 400 people in:

Ulm (Germany): GaAs & GaN technology development

and production

Villebon (France): product development,

back-end production, support

UMS at a glance

UMS GmbH

UMS SAS

4

Sales evolution (in M€)

Sales split by market (2017)


Date / Ref doc 5

UMS silicon process IC supply chain includes

several WW & European foundries:

Access to various processes:

SiGe BiCMOS 150GHz to 320GHz Ft

CMOS / RF CMOS from 250 to 40nm

Use of our internal UMS III-V qualified processes:

Technology Portfolio


Date / Ref doc

UMS simulation tools / CADENCE environment

UMS uses CADENCE development flow tools for mixed signal design

Simulation of analogue transistor level (spectre model) and behavioral (Verilog / VHDL) models in the same

CADENCE bench.

This global system simulation capability allows accurate noise, power, spectrums and settling time

simulations.

Keysight Goldengate simulation and Momentum EM tools

integrated in Cadence environment.

Virtuoso AMS Designer (Eval mixed simu)

SPICE

Cadence Schematic/VHDL to layout

« Virtuoso Digital Implementation » (eval)

Layout interconnect parasitics extraction. (EM sim)

Layout design rules check. (ASSURA, PVS)

Layout versus schematic check.

For III-V technologies we use ADS from Keysight

Auto-Layout with p-cells.

DRC, E/M available.

Design Tools with external and internal PDKs

6


Date / Ref doc

I N T E G R AT E D 3 D E M

Package input transition

ADS can easily simulate cavity,

bond wires, and dielectric bricks:

Bond wire interconnect between two

substrates

Chip to board, board to package

transitions

Spiral inductor w/ an air cavity

And more…

Improved design productivity using

assembly and package capabilities

from ADS workflow (ease matching

network optimization, consider

manufacturing constraint, reduce

design cycle development)


Date / Ref doc

Example 1: Low cost 24GHz Transceiver

8

TRx 24GHz / Automotive Radar sensor / High volume Frequency Band: 24-24.5GHz

13dBm Max Tx Power

12dB Tx Power control range

37dB Rx gain with 24dB Rx gain control range

11dB Rx SSB NF @ IF≥100kHz, max RF gain

-16dBm IP1dB RF power @ min RF VGA gain

Power & T°C sensors

Build in test for safety

Temperature range from -40°C to +125°C

DC bias: 3.3V / 205-225mA @ Pout @ stage 8-0

ESD protected, RoHS compliant

High performance small leadless plastic package

Mixed Design included:

Asynchronous logic (Low current)

Decoders (up to 4:16)

Multiplexer

Divider 24GHz /16384 /16

D/A converter 4 bits (SPI sync)

Registers

Serial Peripheral Interface SPI (24 bits) 4 wires

GaAs

BiCMOS


Date / Ref doc 9

Multi-die TRx 24GHz / Automotive Radar sensor

Architecture flexibility 2 to 4 Rx

Multi-technologies (GaAs HBT and passive, BiCMOS) for optimum cost / performance / time

to market

Low cost single package

Same dies & 2 different products

Example 2: Low cost 24GHz Transceiver


Date / Ref doc

2W Highly Integrated Front-End 24 - 31GHz

Ex 3: 5G High-Power Front-End

High linearity HPA

RF bandwidth: 24-31GHz

Tx Gain > 30dB

Tx Pout > 33dBm

Rx Gain > 18dB

Rx Noise Figure < 3.5dB

Rx P1dB: -7dBm

Low consumption < 7W

28 leads QFN 4x5mm

Application High-throughput Fixed Access Wireless

TDD Communication Systems

Phased array antenna

UMS

CHC6053

Low consumption

Plastic package

GaAs LNA

10

Vol tage Inverter Interface

Sel f-biased Driver PA AB H PA

SPD T

Sw itch

Sel f-biased LNA

GaAs dieGaN die

QFN Lead Driver DC supply QFN Lead HPA DC supply

QFN Lead DC supply VRef,SW

QFN Lead IN RF TX

QFN Lead OUT RF RX

TX/RXAntenna

VCtrl,SW VG,Ctrl,LNA

2.5

0m

m

1.55mm 1.55mm

Presented in workshop session at EuMW 2018 WS/SC WS-03:

“Broadband and Packaged 5G High Power Front-End for 28GHz Solutions “


Date / Ref doc

0

2

4

6

8

10

12

14

16

18

20

22

24 25 26 27 28 29 30

No

ise F

igu

re &

Gain

(d

B)

Frequency (GHz)

Gain

NF

Ex 3: 5G High-Power Front-End

10

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

24 25 26 27 28 29 30

Ga

in (d

B)

Frequency (GHz)

Gain

Pout @5dBcomp

PAE @5dBcomp

TX

0

5

10

15

20

25

30

35

0

5

10

15

20

25

30

35

-30 -25 -20 -15 -10 -5 0 5 10

PD

C (W

) &

PA

E (

%)

Ou

tpu

t P

ow

er

(dB

m)

Input power (dBm)

Pout

PAE

PDC

RX

2W Integrated Front-End 24 - 31GHz

26 GHz

11


Date / Ref doc 12

SPI + Core chip mainly for defense products

Demonstrator of Control Functions + SPI

8 bits cascadable serial to parallel interface

Validated 100MHz rate, -40°C to +85°C

S Band Phase Shifter L Band Phase Shifter S Band Core Chip

SPI can be chained to control Core chip (16 bits)

Ex 4: Core ship with serial to parallel interface


Date / Ref doc

Ex 5: S-band 50W HPA

Multi technology Q-MMIC:

GaAs, GaN, laminate

R&D exercise with Keysight on ETH

thermal stack definition, using UMS

electro-thermal GaN model

High Power Amplifier

S-band

Power > 50W

Efficiency : 50%

Plastic package

DFN 8x8mm²

Power

Transistor

Model Splitter /

combiner ICs

4W 10W

25W

Dissipated Power

Full ETH simulation with self-heating

turned off in the electrical model Temperature profile with ETH


Date / Ref doc

UMS develops product evaluation boards for:

Customer evaluation of performances

Customer support for product integration in their system

Characterization purpose

14

Test & evaluation board


Date / Ref doc

UMS provides full characterization service

RF from DC to 100GHz / digital control capability (SPI)

Faraday specific box

Automated test / test software definition

Temperature -55°C to +125°C

15

Test & evaluation board


Date / Ref doc

UMS develops production test set-up

Test Fixture Design with socket

PCB Definition (8x layers)

PCB Layout

PCB manufacturing & validation

UMS develops production test set-up with customers

Test Socket Co-Design & Optimization up to 44 GHz

PCB Manufacturing sub-contracted

Test sequence co-definition

16

Test fixtures development


Date / Ref doc

UMS develops low to mid volume production test set-up

Telecom product example:

Transceiver Test Plan Definition

Conversion Gain (baseband I/Q to RF)

LO Leakage & SSB

DC consumption

Detectors & remaining I/Os

SPI management

Noise (by sampling)

Semi-automatic handling tests

Volume < 250k/year

Medium volumes

Test in package


Date / Ref doc

UMS develops mass production test set-up

Test PCB’s & sockets integration

Test software & sequence (100% functional RF test)

Test handler mechanic’s design & optimization

High volumes

Test in package

CHC2442 QFN Test

Multi-chip / multi techno / multi-

function


Date / Ref doc

UMS also proposes reliability tests & full product qualification service

>15 years back-ground in product qualification

>20M automotive AEC-Q100 qualified products sold per year

19

Qualification plan

RFIC KGD

Autoclave 1x32

Thermal cycling 1x32

HBM/MM CDM

HTOL 1x30

Assembly on reliability boards

Pre-conditioning 1x64

Storage 1x32

THB 1x30

Assembly on reliability boards

LU 3

Reliability assessment

Pre-conditioning

Thermal cycling

Environmental tests

Ageing tests

ESD/LU

Pre-conditioning 1x64

Reliability test for Qualification


Date / Ref doc

THANK you for your attention

Questions ?

Packaged mm-Wave GaN, GaAs and Si ICs for 5G and ...

Documents

Transcript of Packaged mm-Wave GaN, GaAs and Si ICs for 5G and ...