MT5060 - 1mos.com · Jan 2011 ©2011 MOS-TECH Semiconductor Corporation MT5060 Rev.A 1 MT 5 0 6 0...

©20MT

MT5060 N

-Channel Pow

er ® MO

SFET

MOS-TECH Semiconductor Co.,LTD� � � � ��

Jan 2011

MT5060 N-Channel Power® MOSFET

60 V, 50 A, 12.5 mΩFeatures

Max rDS(on) = 12.5 mΩ at VGS = 10 V, ID = 12 AMax rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 AHigh performance technology for extremely low rDS(on)

Termination is Lead-free and RoHS Compliant

General DescriptionThis N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced Power ® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebo ok Computers and Portable Battery Packs.

ApplicationsDC/DC Buck Converters

Notebook battery power management

Load Switch in Notebook

11 MOS-TECH Semiconductor Corporation5060 Rev.A

www.mtsemi.com1

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 60 VVGS Gate to Source Voltage (Note 4) ±25 V

ID

Drain Current -Continuous (Package limited) TC = 25°C 20

A -Continuous (Silicon limited) TC = 25°C 50 -Continuous TA = 25°C (Note 1a) 22 -Pulsed 90

EAS Single Pulse Avalanche Energy (Note 3) 21 mJ

PDPower Dissipation TC = 25°C 25

WPower Dissipation TA = 25°C (Note 1a) 2.4

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

RθJC Thermal Resistance, Junction to Case 5.0°C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Device Marking Device Package Reel Size Tape Width Quantity MT5060 MT5060 TO-126 - - 50 units

11. Gata 2.Drain 3.Source

TO-126

D

G

S

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MT5060 N

-Channel Pow

er ® MO

SFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 60 VΔBVDSS ΔTJ

Breakdown Voltage TemperatureCoefficient ID = 250 μA, referenced to 25 °C 14 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μAIGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.8 3.0 V ΔVGS(th) ΔTJ

Gate to Source Threshold VoltageTemperature Coefficient ID = 250 μA, referenced to 25 °C -6 mV/°C

rDS(on) Static Drain to Source On Resistance

VGS = 10 V, ID = 12 A 12.5 15.5

mΩVGS = 4.5 V, ID = 10 A 22.3 25VGS = 10 V, ID = 12 A, TJ = 125 °C 15.2 22.1

gFS Forward Transconductance VDS = 5 V, ID = 12 A 45 S

Ciss Input CapacitanceVDS = 45 V, VGS = 0 V,f = 1 MHz

1235 1450 pFCoss Output Capacitance 390 515 pFCrss Reverse Transfer Capacitance 43 58 pFRg Gate Resistance 0.2 1.0 2.0 Ω

td(on) Turn-On Delay TimeVDD = 45 V, ID = 12 A,VGS = 10 V, RGEN = 6 Ω

9 18 nstr Rise Time 2 10 nstd(off) Turn-Off Delay Time 19 35 nstf Fall Time 2 10 nsQg Total Gate Charge VGS = 0 V to 10 V

VDD = 15 V, ID = 12 A

16 26 nCQg Total Gate Charge VGS = 0 V to 5 V 8 11 nCQgs Gate to Source Charge 3.5 nCQgd Gate to Drain “Miller” Charge 1.9 nC

VSD Source to Drain Diode Forward VoltageVGS = 0 V, IS = 1.9 A (Note 2) 0.75 1.2

VVGS = 0 V, IS = 12 A (Note 2) 0.80 1.2

trr Reverse Recovery TimeIF = 12 A, di/dt = 100 A/μs

26 41 nsQrr Reverse Recovery Charge 9 18 nC

Notes:1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 21 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

©20MT

MT5060 N

-Channel Pow

er ® MO

SFET

Typical Characteristics TJ = 25 °C unless otherwise noted

Figure 1.

0.0 0.5 1.0 1.5 2.0 2.50

10

20

30

40

50

VGS = 4.0 V

VGS = 4.5 V

VGS = 3.5 V

VGS = 6 V

PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX

VGS = 10 V

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0 10 20 30 40 500

1

2

3

4

5

6

VGS = 4.0 V

VGS = 6 V

VGS = 3.5 V


NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 10 V

Normalized On-Resistance vs Drain Current and Gate Voltage

Figure 3. Normalized On Resistance

-75 -50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

ID = 12 AVGS = 10 V

NO

RM

ALI

ZED

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E

TJ, JUNCTION TEMPERATURE (oC)

vs Junction TemperatureFigure 4.

2 4 6 8 100

5

10

15

20

25

30

35

40

TJ = 125 oC

ID = 12 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

r DS(

on),

DR

AIN

TO

SO

UR

CE

ON

-RES

ISTA

NC

E (m

Ω) PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to Source Voltage

Figure 5. Transfer Characteristics

1 2 3 4 50

10

20

30

40

50

TJ = 150 oC

VDS = 5 V


TJ = -55 oC

TJ = 25 oC

I D, D

RA

IN C

UR

REN

T (A

)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.20.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode Forward Voltage vs Source Current

www.mtsemi.com311 MOS-TECH Semiconductor Corporation5060 Rev.A

©20MT

MT5060 N

-Channel Pow

er ® MO

SFET

Figure 7.

0 4 8 12 160

2

4

6

8

10

ID = 12 A

VDD = 20 V

VDD = 10 V

V GS,

GA

TE T

O S

OU

RC

E VO

LTA

GE

(V)

Qg, GATE CHARGE (nC)

VDD = 15 V

Gate Charge Characteristics Figure 8.

0.1 1 1010

100

1000

3000

f = 1 MHzVGS = 0 V

CA

PAC

ITA

NC

E (p

F)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

30

Capacitance vs Drain to Source Voltage

Figure 9.

0.001 0.01 0.1 1 10 1001

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

Unclamped Inductive Switching Capability

Figure 10.

25 50 75 100 125 1500

10

20

30

40

VGS = 4.5 V

Limited by Package

RθJC = 5.0 oC/W

VGS = 10 VI D

, DR

AIN

CU

RR

ENT

(A)

TC, CASE TEMPERATURE (oC)

Maximum Continuous Drain Current vs Case Temperature

Figure 11. Forward Bias Safe Operating Area

0.01 0.1 1 10 1002000.01

0.1

1

10

100

1 s

100 μs

10 ms

DC10 s

100 ms

1 ms

I D, D

RA

IN C

UR

REN

T (A

)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY rDS(on)

SINGLE PULSETJ = MAX RATEDRθJA = 125 oC/WTA = 25 oC

Figure 12.

10-4 10-3 10-2 10-1 1 10 100 10000.5

1

10

100

1000

SINGLE PULSERθJA = 125 oC/WTA = 25 oC

P(PK

), PE

AK

TR

AN

SIEN

T PO

WER

(W)

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation



©20MT

MT5060 N

-Channel Pow

er ® MO

SFET

Figure 13.

10-4 10-3 10-2 10-1 1 10 100 10000.001

0.01

0.1

1

SINGLE PULSERθJA = 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NO

RM

ALI

ZED

TH

ERM

AL

IMPE

DA

NC

E, Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5 0.2 0.1 0.05 0.02 0.01

2

PDM

t1t2

NOTES:DUTY FACTOR: D = t1/t2PEAK TJ = PDM x ZθJA x RθJA + TA

Junction-to-Ambient Transient Thermal Response Curve



3.25 ±0.208.00 ±0.30

ø3.20 ±0.10

0.75 ±0.10

#1

0.75 ±0.10

2.28TYP[2.28±0.20]

2.28TYP[2.28±0.20]

1.60 ±0.10

11

.00

±0

.20

3.9

0 ±

0.1

0

14

.20

MA

X

16

.10

±0

.20

13

.06

±0

.30

1.75 ±0.20

(0.50)(1.00)

0.50+0.10–0.05

TO-126

Dimensions in Millimeters

www.mtsemi.com 6 ©2011 MOS-TECH Semiconductor Corporation MT5060 Rev.A

MT5060 N

-Channel Pow

er ® MO

SFET

1. This document is provided for reference purposes only so that Mos-tech customers may select the appropriate Mos-tech products for their use. Mos-tech neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Mos-tech or any third party with respect to the information in this document. 2. Mos-tech shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations.4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Mos-tech products listed in this document, please confirm the latest product information with a Mos-tech sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Mos-tech such as that disclosed through our website. (http://www.mtsemi.com )5. Mos-tech has used reasonable care in compiling the information included in this document, but Mos-tech assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document.6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Mos-tech makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Mos-tech products.7. With the exception of products specified by Mos-tech as suitable for automobile applications, Mos-tech products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Mos-tech sales office beforehand. Mos-tech shall have no liability for damages arising out of the uses set forth above.8. Notwithstanding the preceding paragraph, you should not use Mos-tech products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Mos-tech shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Mos-tech products in any of the foregoing applications shall indemnify and hold harmless Mos-tech Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Mos-tech, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Mos-tech shall have no liability for malfunctions or damages arising out of the use of Mos-tech products beyond such specified ranges.10. Although Mos-tech endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Mos-tech product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.11. In case Mos-tech products listed in this document are detached from the products to which the Mos-tech products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Mos-tech products may not be easily detached from your products. Mos-techshall have no liability for damages arising out of such detachment.12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Mos-tech. 13. Please contact a Mos-tech sales office if you have any questions regarding the information contained in this document, Mos-tech semiconductor products, or if you have any other inquiries.

Notes regarding these materials


©2010 MOS-TECH Semiconductor Corporation www.mtsemi.com

1.

2.

3.中国

4.

(http://www.mtsemi.com)5.

6.

7.

8.

1234

9.

10.

11.

12.13.

“Cautions”

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1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

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