Fairchild BS170 n-channel MOSFET datasheet · 2017-12-18Fairchild BS170 n-channel MOSFET datasheet
Single N-channel MOSFET Rev.1.0 ELM51432A-S 3 / 5 Typical electrical and thermal characteristics...
Transcript of Single N-channel MOSFET Rev.1.0 ELM51432A-S 3 / 5 Typical electrical and thermal characteristics...
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Rev.1.0
ELM51432A-S
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■General description ■Features
■Maximum absolute ratings
■Thermal characteristicsParameter Symbol Typ. Max. Unit
Maximum junction-to-ambient Rθja 120 °C/W
Parameter Symbol Limit UnitDrain-source voltage Vds 30 VGate-source voltage Vgs ±20 V
Continuous drain current(Tj=150°C)Ta=25°C
Id4.0
ATa=70°C 3.6
Pulsed drain current Idm 15 A
Power dissipationTc=25°C
Pd1.56
WTc=70°C 1.00
Operating junction temperature Tj 150 °CStorage temperature range Tstg - 55 to 150 °C
ELM51432A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.
■Pin configuration ■Circuit
S
G
D
Single N-channel MOSFET
• Vds=30V• Id=4.0A• Rds(on) = 30mΩ (Vgs=10V)• Rds(on) = 35mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
1 3
56
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4 Pin No. Pin name1 DRAIN2 DRAIN3 GATE4 SOURCE5 DRAIN6 DRAIN
SC-70-6(TOP VIEW)
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■Electrical characteristics
Parameter Symbol Condition Min. Typ. Max. UnitSTATIC PARAMETERSDrain-source breakdown voltage BVdss Id=250μA, Vgs=0V 30 V
Zero gate voltage drain current Idss Vds=24V, Vgs=0V1
μATa=85°C 30
Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nAGate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 2.0 VOn state drain current Id(on) Vgs=10V, Vds≥4.5V 6 A
Static drain-source on-resistance Rds(on)Vgs=10V, Id=4.0A 20 30
mΩVgs=4.5V, Id=3.5A 25 35
Forward transconductance Gfs Vds=4.5V, Id=2.5A 8 SDiode forward voltage Vsd Is=1.6A, Vgs=0V 0.8 1.2 VMax. body-diode continuous current Is 1.3 ADYNAMIC PARAMETERSInput capacitance Ciss
Vgs=0V, Vds=15V, f=1MHz320 pF
Output capacitance Coss 70 pFReverse transfer capacitance Crss 30 pFSWITCHING PARAMETERSTotal gate charge Qg
Vgs=10V, Vds=15VId≡2.6A
3.0 4.5 nCGate-source charge Qgs 1.6 nCGate-drain charge Qgd 0.6 nCTurn-on delay time td(on)
Vgs=10V, Vds=15V RL=15Ω, Id≡1.0ARgen=6.0Ω
8 12 nsTurn-on rise time tr 12 18 nsTurn-off delay time td(off) 15 30 nsTurn-off fall time tf 8 15 ns
Single N-channel MOSFET
Ta=25°C. Unless otherwise noted.
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■Typical electrical and thermal characteristics
Single N-channel MOSFET
AFN143230V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 3
Typical Characteristics
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Rev.1.0
ELM51432A-S
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Single N-channel MOSFET
AFN143230V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 4
Typical Characteristics
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Rev.1.0
ELM51432A-S
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Single N-channel MOSFET
■Test circuit and waveform
AFN143230V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A Dec. 2014 Page 5
Typical Characteristics