MSU Design Day Presentation

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Global Supply Management Global Supply Management Members: Samantha Caves, Nicole Clark, Michael Jones, Michael Keller, Hali MacMillan, Nicholas Schulte Alternative Supply Line Design for Intel’s Assembly Test Factory Network

Transcript of MSU Design Day Presentation

Page 1: MSU Design Day Presentation

Global Supply ManagementGlobal Supply Management

Members: Samantha Caves, Nicole Clark, Michael Jones, Michael Keller, Hali MacMillan, Nicholas Schulte

Alternative Supply Line Design for Intel’s Assembly Test Factory Network

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Intel’s Vision

“If it is smart and connected, it is best with Intel.”

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Intel’s Mission

“Utilize the power of Moore’s Law to bring smart, connected devices to every person on Earth.”

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Executing Moore’s Law

“Enabling new devices with higher functionality and complexity while controlling power, cost,

and size”

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Introduction● Computers and processors are vital to Intel and nearly

all of our daily liveso Keeping these in proper working order is critical

● What are heat spreaders?● Sustainable options

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Problem Details● Heat spreaders manufactured from C101 Copper Alloy● Goal:

o Determine alternative material Meets mechanical properties and cost effective

o Determine supplier selection and sourcing● Necessary to understand the specs and manufacturing

process

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C101 Copper● Electrically refined copper alloy

o Contains less than .001 % oxygen● High thermal conductivity and coefficient of thermal

expansion (CTE)o 390 - 400 W/mK and 16 - 17 ppm/C

● Worldwide availability ● Stamping makes it cost effective to manufacture● Commonly used in electronics

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Project Scope● Separated the project into two parts:

o Material research and selectiono Material sourcing, supplier selection, manufacturing process

● Focus on increasing heat efficiency of Integrated Heat Spreader (IHS) and lowering cost

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Material Specific Criteria● Thermal conductivity (W/mK)● Coefficient of thermal expansion, CTE (ppm/C)● Dimensions (32mm x 34mm)● Surface finish (nickel plating/alternative technique)● Material manufacturing (conflict free)

o Conflict Minerals- Minerals that come from the Democratic Republic of Congo (DRC), where the profits of these minerals fund violence committed by the rebel groups

● Cost● Availability of material

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Initial Material Research● CuB-42MBD4(120/140)(70/80)● CuMo● Aluminum Nitride ● Copper-Tungsten Alloy● Tungsten Carbide● Al-Diamond ● CarbAl ● Cubic Boron Arsenide

● Silicon Carbide● Dymalloy● Silver Diamond● Cubic Boron Arsenide

● Copper Graphite● Natural Graphite● Aluminum Graphite● Aluminum Silicon Carbide

Thermal conductivity

and dimensions

Research Criteria:

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Short List● CarbAl● Copper Graphite● Aluminum Graphite● CuB - 42MBD4 (120/140)

(70/80)● Silicon Carbide (C6H)● Aluminum Diamond

Research Criteria:

Minimum dimensions,

surface finish, location and availability of material, cost

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Copper Graphite

Material Name

Thermal Conductivity

(W/mK)

CTE (ppm/C) Minimum Material

Dimensions (32 mm by 34

mm)

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated South East Asia Cheap/High Yield

Current material for heat

spreader

Copper Graphite(GR-CU)

265-300 4-7 No Nickel Plated North America Expensive/Low Yield

Adding graphite makes the

manufacturing process more

intense

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CuB-42MBD4(120/140)(70/80)Material Name

Thermal Conductivity

(W/mK)

CTE (ppm/C) Minimum Material

Dimensions (32 mm by 34

mm)

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated South East Asia Cheap/High Yield

Current material for heat

spreader

CuB- 42MBD4 (120/140)(70/80)

520-598 10.1/12.4 N/A N/A Dresden, Germany

Expensive/ Low Yield

Due to this material

containing synthetic

diamonds it is very expensive

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Aluminum Diamond

Material Name Thermal Conductivity

(W/mK)

CTE (ppm/C)

Minimum Material

Dimensions (32 mm by

34 mm)

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated

South East Asia

Cheap/High Yield

Current material for heat spreader

Aluminum Diamond 500 6.1-7.9 Yes Nickel Plated

EuropeNorth

America

Expensive/ Low Yield

Diamond is very expensive and hard to

work with

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Top Three Materials● CarbAl

o Applied Nanotech, Inc.● Aluminum Graphite

o Mersen

o Schunk Hoffman

o MMCC

o Bracalente

● Silicon Carbide (C6H)o Genesico BayCarbono Stanford Advanced Materialso II-VI Incorporatedo Dow Corningo Nitride Crystals Groupo SiCrystal AGo TanKeBlue Ltd.

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CarbAl

Material Name

Thermal Conductivity

(W/mK)

CTE (ppm/C) Minimum Material

Dimensions

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated South East Asia Cheap/High Yield

Current material for heat

spreader

CarbAl 350 2 No Nickel Plated Austin, Texas

Applied Nanotech

Cheap/Low Yield Can be inlayed and plated in copper and is

currently being looked at by

NASA for heat sink applications

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Aluminum Graphite

Material Name

Thermal Conductivity

(W/mK)

CTE (ppm/C) Minimum Material

Dimensions

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated South East Asia

Cheap/High Yield

Current material for heat spreader

AlGrp(Range is 10-90% graphite)

324-783 Matched: Parallel (16.9-

2.5)Perpendicular

(15.2-10.1)

No Nickel Plated Worldwide

MMCC

Mersen

Expensive/Low Yield

Further research suggests that the manufacturing process is not

readily available

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Final Material - Silicon Carbide

Material Name

Thermal Conductivity

(W/mK)

CTE (ppm/C) Minimum Material

Dimensions

Surface Plating

Material Production(location)

Cost/Yield Notes:

C101 Copper 390-400 16-17 Yes Nickel Plated South East Asia

Cheap/High Yield

Current material for heat spreader

Silicon Carbide

360-490 1.2-7.9 Yes Nickel Plated Worldwide

Dow Corning

Stanford Advanced Materials

Cheap/High Yield

Available worldwide and

meets all requirements for

alternative material

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Silicon Carbide Process Flow - Dow CorningCrystal Growth

Epi Polish

Stock Polish

Wafer Shaping

Wafer Slicing

Ingot Shaping Epi Growth

Clean/Package

Final Polish

Clean/Package

M

CMetrology Steps

Cleaning Steps

M

M

M

M

M

M

M

M

C

C

C

C

C

C

Seed Surface Prep

Seed Slicing

Seed Ingot Shaping

M

M

M

M C

C

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Stanford Advanced Materials-SiC Process Flow-

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Cost

● Stanford quoted $11 per unito Quantity of 50,000 pieces

● Dow Corning has no bido Would need a secondary company

to diamond machine● Alternate materials meeting

performance requirements are higher cost than stamped copper

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Major Challenges● Finding suppliers of high grade SiC● Working with manufacturers● Complex manufacturing/machining process

o Competitive cost● Issues with procuring a sample● Integrated package performance due to CTE of IHS● Meeting strict design criteria

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Conclusion● Many materials with novel properties meeting requirement

o Continue monitoring CarbAl and AlGrp ● Silicon Carbide

o Viable option for large complex operationso More sustainable than Copper and Goldo Very strong, low density materialo Uniform structure, most reliable in long runo High thermal conductivity capabilitieso Can be Nickel plated

Same laser etching process

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A special thanks to our Intel sponsors, Sabina Houle and Mark Norwil!

Thank you Intel!

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