MJE13001 Transistor Data

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MJE13001 NPN Silicon Plastic-Encapsulate Transistor Features Capable of 1.0Watts of Power Dissipation. Collector-current 0.2A Collector-base Voltage 600V Operating and storage junction temperature range: -55 O C to +150 O C Electrical Characteristics @ 25 O C Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage (I C =1.0mAdc, I B =0) 400 Vdc V (BR)CBO Collector-Base Breakdown Voltage (I C =100uAdc, I E =0) 600 Vdc V (BR)EBO Emitter-Base Breakdown Voltage (I E =100uAdc, I C =0) 7.0 Vdc I CBO Collector Cutoff Current (V CB =600Vdc, I E =0) 100 uAdc I CEO Collector Cutoff Current (V CE =400Vdc,I B =0) 200 uAdc I EBO Emitter Cutoff Current (V EB =7.0Vdc, I C =0) 100 uAdc ON CHARACTERISTICS h FE(1) DC Current Gain (I C=20mAdc, V CE=20Vdc) 10 40 h FE(2) DC Current Gain (I C =0.25mAdc, V CE =10Vdc) 5.0 V CE(sat) Collector-Emitter Saturation Voltage (I C =50mAdc, I B =10mAdc) 0.5 Vdc V BE(sat) Base-Emitter Saturation Voltage (I C =50mAdc, I B =10mAdc) 1.2 Vdc VBE Base-Emitter Voltage (I E =100mAdc) 1.1 Vdc SMALL-SIGNAL CHARACTERISTICS f T Transistor Frequency (I C=20mAdc, VCE=20Vdc, f=1.0MHz) 8.0 MHz t F Fall Time 0.3 uS tS Storage Time V CC =45V,I C =50mA I B1=I B2=5.0mA 1.5 uS TO-92 DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 C .500 --- 12.7 --- D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 A E B C D G omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: 3 2007/09/19 1 2 3 1.BASE 3.EMITTER 2.COLLECTOR TM Micro Commercial Components www.mccsemi.com 1 of 3 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Marking: 13001

description

Transistor data for MJE13001.

Transcript of MJE13001 Transistor Data

Page 1: MJE13001 Transistor Data

MJE13001

NPN SiliconPlastic-Encapsulate

Transistor

Features• Capable of 1.0Watts of Power Dissipation.• Collector-current 0.2A• Collector-base Voltage 600V• Operating and storage junction temperature range: -55OC to +150OC

Electrical Characteristics @ 25OC Unless Otherwise SpecifiedSymbol Parameter Min Max Units

OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage

(IC=1.0mAdc, IB=0)400 Vdc

V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0)

600 Vdc

V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0)

7.0 Vdc

ICBO Collector Cutoff Current (VCB=600Vdc, IE=0)

100 uAdc

ICEO Collector Cutoff Current (VCE=400Vdc,IB=0)

200 uAdc

IEBO Emitter Cutoff Current (VEB=7.0Vdc, IC=0)

100 uAdc

ON CHARACTERISTICS hFE(1) DC Current Gain

(IC=20mAdc, VCE=20Vdc) 10 40 hFE(2) DC Current Gain

(IC=0.25mAdc, VCE=10Vdc) 5.0 VCE(sat) Collector-Emitter Saturation Voltage

(IC=50mAdc, IB=10mAdc) 0.5 Vdc VBE(sat) Base-Emitter Saturation Voltage

(IC=50mAdc, IB=10mAdc) 1.2 VdcVBE Base-Emitter Voltage

(IE=100mAdc) 1.1 Vdc

SMALL-SIGNAL CHARACTERISTICS fT Trans istor Frequency

(IC=20mAdc, VCE=20Vdc, f=1.0MHz) 8.0 MHztF Fall Time 0.3 uStS Storage Time

VCC=45V,IC=50mAIB1=IB2=5.0mA 1.5 uS

TO-92

DIMENSIONS

INCHES MM

DIM MIN MAX MIN MAX NOTE

A .175 .185 4.45 4.70

B .175 .185 4.46 4.70

C .500 --- 12.7 ---

D .016 .020 0.41 0.63

E .135 .145 3.43 3.68

G .095 .105 2.42 2.67

A E

B

C

D

G

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M C C

Revision: 3 2007/09/19

1 2 3

1.BASE

3.EMITTER

2.COLLECTOR

TM

Micro Commercial Components

www.mccsemi.com1 of 3

Case Material: Molded Plastic. UL FlammabilityClassification Rating 94V-0

Marking: 13001

Page 2: MJE13001 Transistor Data

M C C

TM

Micro Commercial Components

www.mccsemi.comRevision: 3 2007/09/192 of 3

MJE13001

Page 3: MJE13001 Transistor Data

M C C

Revision: 3 2007/09/19

TM

Micro Commercial Components

www.mccsemi.com3 of 3

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