Bi-Polar Power Transistor Data Book

DL111/D Rev. 8, July-2001

Bipolar Power Transistor Data

Bipolar Power Transistor Data

DL111/D Rev. 8, Jul2001

SCILLC, 2001 Previous Edition 1995 All Rights Reserved

Grafoil is a registered Trademark of Union Carbide. KonDux and RubberDuc are trademarks of Aavid Thermal Technologies, Inc. Thermasil is a registered trademark and Thermafilm is a trademark of Thermalloy, Inc. Kapton is a registered trademark of du Pont de Nemours & Co., Inc. SilPad is a registered trademark of the Bergquist Company. CHOTHERM is a registered trademark of Chomerics, Inc. FULLPAK, ICePAK, PowerBase, SCANSWITCH, SWITCHMODE, and Thermopad are trademarks of Semiconductor Components Industries, LLC.ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATIONLiterature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 8002829855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031 Phone: 81357402700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.

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Table of Contents

Chapter 1. Selector GuidePage

Chapter 2. Data SheetsPage

Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Selection by Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Plastic TO220AB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Plastic TO218 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Plastic (Isolated TO-220 Type) . . . . . . . . . . . . . . . . 13 Large Plastic TO-264 . . . . . . . . . . . . . . . . . . . . . . . . 13 Plastic TO225AA Type (Formerly TO126 Type) . . . . . . . . . . . . . . . . . . . . 14 DPAK Surface Mount Power Packages . . . . . . . 16 Metal TO204AA (Formerly TO3), TO204AE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Plastic TO247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SOT223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Electronic Lamp Ballasts . . . . . . . . . . . . . . . . . . . . . . . . 21

Bipolar Power Transistor Data Sheets . . . . . . . . . . . . 23

Chapter 3. Applications Information and Case OutlinesApplication Note: A HighPerformance Video Amplifier for High Resolution CRT Applications (AN1040/D) . . . . . . . . . . . . . . . . . 751 Case Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775

Chapter 4. Numeric IndexAlpha Numeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . 783 Sales Office Listing . . . . . . . . . . . . . . . . . . . . . . . . . . 787 Document Type Definitions . . . . . . . . . . . . . . . . . . . . 788

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CHAPTER 1 Selector Guide

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Bipolar Power Transistors

In Brief . . .ON Semiconductors broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3. We now have transistors in SO8 (Dual Transistors) and SOT223. We have a broad line of Electronic Lamp Ballast Transistors, in the BUL Series and MJD18002D2T4, MJE18002, and MJE18004D24. New products include low VCE(sat) devices in surface mount SOT223 package, MMJT9435T1/MMJT9410T1 and in the SO8 package (Dual Transistors), MMDJ3N03BJTR2/ MMDJ3P03BJTR2. We also have a broad line of high performance Audio Output Transistors in TO3, TO264 and new products in the Isolated Hole Plastic TO247 package. The new TO247 devices are designated MJW21191/2/3/4/5/6 and high fT, MJW3281A/1302A. These have excellent high voltage FBSOA performance. ON Semiconductor has a commitment to quality and total customer satisfaction.Page

Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . 8 Selection by Package . . . . . . . . . . . . . . . . . . . . . . . 8 Plastic TO220AB . . . . . . . . . . . . . . . . . . . . . . . . 9 Plastic TO218 . . . . . . . . . . . . . . . . . . . . . . . . . 12 Plastic (Isolated TO-220 Type) . . . . . . . . . . . . 13 Large Plastic TO-264 . . . . . . . . . . . . . . . . . . . . 13 Plastic TO225AA Type (Formerly TO126 Type) . . . . . . . . . . . . . . . . 14 DPAK Surface Mount Power Packages . . . 16 Metal TO204AA (Formerly TO3), TO204AE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Plastic TO247 . . . . . . . . . . . . . . . . . . . . . . . . . 19 D2PAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SOT223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Electronic Lamp Ballasts . . . . . . . . . . . . . . . . . . . . 21

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BIPOLAR POWER TRANSISTORS SELECTOR GUIDESELECTION BY PACKAGEPackage TO-204AA (TO-3) IC Range (Amps) 4.0-30 VCE Range (Volts) 40-250 PD (Watts) 115-250

TO-204AE (TO3)

3060

60-120

150-300

DPAK

0.5-10

40-450

12.5-20

DPAK

0.5-10

40-450

12.5-20

TO-220AB

0.5-15

60-400

30-125

Isolated TO-220 Type

1.0-12

60-450

20-45

TO-225AA (TO-126 Type)

0.3-5.0

25-400

12.5-40

SOT223

3.0

30

2.0 (Note 1.)

SO8

3.0

30

2.0 (Note 2.)

TO-264

15-16

200-250

250

D2PAK

5.08.0

80450

5065

TO247

8.016

150250

200

TO218

5.010

60350

125150

1. Tested on 1 sq. FR4 Board 2. Tested on 1 sq., 2 oz. copper

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Plastic TO220ABDevice Type ICCont Amps Max 1.0 VCEO(sus) Volts Min (Note 7.) 80 100 250 300 350 400 2.0 60 80 100 400/700 450/1000 450/1000 3.0 60 80 100 hFE Min/Max 15/75 15/75 30/150 MJE5730 30/150 30/150 30/150 500 min 500 min 500 min 14/36 30 14/34 TIP32A 25 min 25 min 25 min 25 min 40/120 6/30 TIP125 (Note 4.) TIP126 (Note 4.) 1k min 1k min 1k min 10/75 14/34 14/34 @ IC Amp 1.0 1.0 0.3 0.3 0.3 0.3 2.0 2.0 2.0 0.4 0.1 0.2 1.0 1.0 1.0 1.0 0.2 3.0 3.0 3.0 3.0 2.5 0.3 0.3 3.0 1.5 typ 1.5 typ 1.5 typ 1.8 1.7 (Note 5.) 1.7 0.7 1.5 typ 1.5 typ 1.5 typ 0.8 0.15 (Note 5.) 0.15 0.6 typ 0.3 typ 1.0 1.0 3.0 3.0 3.0 4.0 2.5 1.0 1.0 Resistive Switching ts s Max 0.6 typ 0.6 typ 2.0 typ 2.0 typ 2.0 typ 2.0 typ 1.7 typ 1.7 typ 1.7 typ 2.75 (Note 5.) 3.5 3.0 (Note 5.) 0.6 typ 0.6 typ tf s Max 0.3 typ 0.3 typ 0.18 typ 0.18 typ 0.18 typ 0.18 typ 1.3 typ 1.3 typ 1.3 typ 0.175 (Note 5.) 1.4 0.17 (Note 5.) 0.3 typ 0.3 typ @ IC Amp 1.0 1.0 0.3 0.3 0.3 0.3 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 fT MHz Min 3.0 3.0 10 10 10 10 25 (Note 3.) 25 (Note 3.) 25 (Note 3.) 13 typ 4.0 12 typ 3.0 3.0 3.0 3.0 40 typ 4.0 4.0 (Note 3.) 4.0 (Note 3.) 4.0 (Note 3.) 5.0 12 typ 13 PD (Case) Watts @ 25C 30 30 40 40 40 40 50 709 50 709 50 709 50 279 50 40 505 40 40 40 40 30 60 65 715 65 715 75 715 80 75 296 75 522 512 133 729 729 157 729 320 468 313

NPN TIP29B TIP29C TIP47 TIP48

PNP TIP30B TIP30C

Page 725 725 747 747, 581 581 747, 581

MJE5731 TIP50TIP110 (Note 4.) TIP111 (Note 4.)

MJE5731A (Note 6.)TIP115 (Note 4.) TIP116 (Note 4.)

TIP112 (Note 4.) BUL44 BUX85 MJE18002TIP31A

TIP117 (Note 4.)

TIP31BBD241C

TIP32BBD242C

TIP31C4.0 80 400/700 5.0 60 80 100 250 400/700 450/1000

TIP32C D45C12

D44C12 MJE13005TIP120 (Note 4.) TIP121 (Note 4.)

TIP122 (Note 4.)2N6497

TIP127 (Note 4.)

BUL45 MJE18004MJE18004D2*

3. |hFE| @ 1.0 MHz 4. Darlington 5. Switching tests performed with special application simulator circuit. See data sheet for details. 6. VCEO = 375 V 7. When 2 voltages are given, the format is VCEO(sus)/VCES. *D2 suffix indicates transistor with built in CE freewheeling diode and antisaturation network. Devices listed in bold, italic are ON Semiconductor preferred devices.

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Plastic TO220AB (continued)Device Type ICCont Amps Max 6.0 VCEO(sus) Volts Min (Note 11.) 60 80 hFE Min/Max 15/75 15/75 15 min 15 min 15/75 14/34 14/34 2N6111 2N6109 2N6292 BU407 2N6107 30/150 30/150 30/150 30 min 30 min 2N6040 (Note 9.) TIP105 (Note 9.) 1k/10k 1k/20k 750 min 1k/20k 1k/10k 750 min 1k/20k 20 min 20 min 200 min MJE5850 15 min 15 min 200 min 5/30 @ IC Amp 3.0 3.0 3.0 3.0 3.0 0.5 0.5 3.0 2.5 2.0 1.5 1.5 4.0 3.0 3.0 3.0 3.0 3.0 203 3.0 4.0 4.0 4.0 2.0 2.0 4.0 5.0 2.0 8.0 typ 2.0 2.0 8.0 typ 3.0 2.0 2.0 typ 0.5 0.5 2.0 typ 0.7 0.5 6.0 4.0 4.0 6.0 5.0 4.0 1.5 typ 1.5 typ 3.0 4.0 (Note 8.) 30 30 4.0 80 704 50 50 80 585 80 80 80 585 80 80 474 590 590 590 492 492 1.5 typ 1.5 typ 1.5 typ 1.5 typ 3.0 3.0 1.5 typ 1.5 typ Resistive Switching ts s Max 0.4 typ 0.4 typ 0.4 typ 0.4 typ 0.4 typ 1.75 (Note 10.) 3.2 (Note 10.) 0.4 typ 0.4 typ 0.4 typ tf s Max 0.15 typ 0.15 typ 0.15 typ 0.15 typ 0.15 typ 0.15 (Note 10.) 0.13 (Note 10.) 0.15 typ 0.15 typ 0.15 typ 0.75 0.75 1.5 typ 1.5 typ @ IC Amp 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 5.0 5.0 3.0 3.0 fT MHz Min 3.0 3.0 3.0 3.0 3.0 14 typ 14 typ 4.0 4.0 4.0 10 10 4.0 (Note 8.) 4.0 (Note 8.) 4.0 (Note 8.) 4.0 (Note 8.) 4.0 (Note 8.) PD (Case) Watts @ 25C 65 65 65 65 65 100 263 100 531 40 40 40 60 60 75 98 80 704 60 203 80 704 75 98 107 107 107 214 214

Page 742 742 162 162 742

NPN TIP41A TIP41B

PNP TIP42A TIP42B

BD243B100

BD244B BD244C TIP42C

BD243C TIP41C

400/700 450/1000 7.0 30 50 70 150 200 8.0 60

BUL146 MJE180062N6288

BU4062N6043 (Note 9.) TIP100 (Note 9.)

80

BDX53B (Note 9.) TIP101 (Note 9.)

BDX54B (Note 9.) TIP106 (Note 9.) 2N6042 (Note 9.) BDX54C (Note 9.) TIP107 (Note 9.)MJE15029

100

2N6045 (Note 9.) BDX53C (Note 9.) TIP102 (Note 9.)

120 150 300/600 300 350 400

MJE15028

MJE15030MJE5740 (Note 9.)

MJE15031

MJE5851 MJE5742 (Note 9.) MJE13007 MJE5852

15 min

8. |hFE| @ 1.0 MHz 9. Darlington 10. Switching tests performed with special application simulator circuit. See data sheet for details. 11. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Plastic TO220AB (continued)Device Type ICCont Amps Max 8.0 VCEO(sus) Volts Min (Note 15.) 400/700 450/1000 10 60 hFE Min/Max 14/34 16/34 D45H8 40 min 20/70 1k/20k 750 min 15 min 1k/20k 20 min 40 min 750 min 6/30 2N6490 20/150 20/150 20 min 1k min @ IC Amp 1.0 1.0 4.0 4.0 5.0 3.0 4.0 5.0 4.0 4.0 3.0 8.0 5.0 5.0 4.0 5.0 3.0 0.6 typ 0.6 typ 0.5 1.0 typ 0.7 0.3 typ 0.3 typ 0.09 1.5 typ 8.0 5.0 5.0 8.0 5.0 0.5 typ 0.5 typ 0.14 typ 0.14 typ 5.0 5.0 20 (Note 12.) 3.0 1.5 20 (Note 12.) 50 typ 50 typ 3.0 4.0 5.0 5.0 50 typ 4.0 Resistive Switching ts s Max 2.5 (Note 14.) 2.75 (Note 14.) tf s Max 0.18 (Note 14.) 0.18 (Note 14.) @ IC Amp 2.0 2.0 fT MHz Min 14 typ 13 typ PD (Case) Watts Page @ 25C 125 125 50 75 65 70 90 65 50 50 70 100 75 75 83 85 272 538 320 560 121, 137 197 183 121, 137 316 316 197 483 127 127 318 190

NPN

PNP

BUL147 MJE18008D44H8

MJE3055T 2N6387 (Note 13.)80

MJE2955T 2N6667 (Note 13.) BDX34B (Note 13.) BD810 2N6668 (Note 13.)D45H10

BDX33B (Note 13.) BD809 2N6388 (Note 13.)D44H10

D44H11100 12 15 400/700 60 80

D45H11 BDX34C (Note 13.)

BDX33C (Note 13.) MJE130092N6487

2N6488 D44VH10

2N6491 D45VH10 BDW47 (Note 13.)

100

BDW42 (Note 13.)

12. |hFE| @ 1.0 MHz 13. Darlington 14. Switching tests performed with special application simulator circuit. See data sheet for details. 15. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Plastic TO218 TypeDevice Type ICCont Amps Max 10 VCEO(sus) Volts Min (Note 18.) 60 hFE Min/Max 500 min 500 min 1k min 20/100 500 min 500/3400 @ IC Amp 10 10 5.0 3.0 10 5.0 10 10 10 10 8.0 10 15 15 0.6 typ 0.6 typ 0.3 typ 0.3 typ 10 10 1.2 typ 1.2 typ 8.0 2.5 typ 2.5 typ 5.0 6.0 2.5 3.0 3.0 3.0 1.0 4.0 3.0 3.0 3.0 4.0 (Note 16.) Resistive Switching ts s Max 2.5 typ 2.5 typ tf s Max 2.5 typ 2.5 typ @ IC Amp 5.0 5.0 fT MHz Min 4.0 (Note 16.) 4.0 (Note 16.) PD (Case) Watts @ 25C 125 125 125 80 125 150 80 150 150 150 125 125 125 125

Page 720 720 187 734 720 209 727 634 634 634 574 640 737 737

NPN TIP140 (Note 17.) TIP141 (Note 17.)

PNP TIP145 (Note 17.) TIP146 (Note 17.)

100

BDV65B (Note 17.)TIP33C

BDV64B (Note 17.)TIP34C

TIP142 (Note 17.)350 15 60 150 200 250 16 20 25 160 100 60 100 BU323Z (Note 17.)

TIP147 (Note 17.)

TIP3055MJH11018 (Note 17.) MJH11020 (Note 17.)

TIP2955MJH11017 (Note 17.) MJH11019 (Note 17.)

5 min 400/15k 400/15k 400/15k 15 min 750/18k 15/75 15/75

MJH11022 (Note 17.) MJE4343 MJH6284 (Note 17.)TIP35A

MJH11021 (Note 17.) MJE4353 MJH6287 (Note 17.)TIP36A

TIP35C

TIP36C

16. |hFE| @ 1.0 MHz 17. Darlington 18. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Plastic (Isolated TO-220 Type)Device Type ICCont Amps Max 1.0 3.0 5.0 VCEO(sus) Volts Min 250 100 100 450 8.0 150 450 10 60 80 100 1000 1000 VCES Volts Min hFE Min/Max 30/150 @ IC Amp 0.3 1.0 3.0 0.3 3.0 1.0 4.0 4.0 3.0 0.5 typ 1.5 typ 0.14 typ 1.5 typ 5.0 Resistive Switching ts s Max 2.0 typ 0.6 1.5 typ 1.7 (Note 21.) 1.0 typ 2.75 (Note 21.) tf s Max 0.17 typ 0.3 1.5 typ 0.15 (Note 21.) 0.15 typ 0.18 (Note 21.) @ IC Amp 0.3 1.0 3.0 1.0 3.0 2.0 fT MHz Min 10 3.0 4.0 (Note 19.) 13 typ 30 13 typ 2.0 40 20 (Note 19.) PD (Case) Watts Page @ 25C 28 28 28 35 35 45 40 35 40 622 729 601 522 608 538 614 618 627

NPN

PNP

MJF47 MJF31C MJF122 (Note 20.) MJF18004 MJF15030 MJF18008 MJF3055 MJF44H11 MJF6388 (Note 20.) MJF2955 MJF45H11 MJF6668 (Note 20.) MJF15031 MJF32C MJF127 (Note 20.)

10 min 2000 min 14/34 40 min 16/34 20/100 40/100 3k/20k

Large Plastic TO-264Device Type ICCont Amps Max 15 16 VCEO(sus) Volts Min 200 250 hFE Min/Max 60/175 25/75 25/75 @ IC Amp 5.0 8.0 8.0 Resistive Switching ts s Max tf s Max @ IC Amp fT MHz Min 30 typ 4.0 4.0 PD (Case) Watts @ 25C Page 200 200 200 655 644 649

NPN

PNP

MJL3281A MJL21194 MJL21196

MJL1302A MJL21193 MJL21195

19. |hFE| @ 1.0 MHz 20. Darlington 21. Switching tests performed with special application simulator circuit. See data sheet for details.

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Plastic TO225AA Type (Formerly TO126 Type)Device Type ICCont Amps Max 0.3 0.5 VCEO(sus) Volts Min 350 200 250 300 350 hFE Min/Max 40/160 30/300 30/250 @ IC Amp 0.02 0.05 0.1 0.05 0.1 0.05 0.5 0.5 0.5 0.15 0.15 0.15 1.0 1.0 0.12 0.1 0.15 0.1 1.0 1.0 2.0 2.0 1.5 1.5 2.0 1.5 1.5 2.0 1.7 typ 1.2 typ 2.0 0.4 typ 0.4 typ 1.5 50 2.0 1.0 (Note 22.) 25 3.0 3.0 0.6 typ 0.12 typ 0.1 50 0.6 typ 0.12 typ 0.1 4.0 0.7 1.0 5.0 3.0 6.0 50 0.6 typ 0.6 typ 0.6 typ 0.3 typ 0.3 typ 0.3 typ 0.5 0.5 0.5 3.0 3.0 3.0 3.5 typ 0.24 typ 0.1 10 3.5 typ 0.24 typ 0.1 Resistive Switching ts s Max tf s Max @ IC Amp fT MHz Min 15 15 10 PD (Case) Watts @ 25C 15 20.8 20 20.8 20 20 30 30 30 12.5 12.5 12.5 40 461 25 15 558 12.5 25 12.5 50 254 40 36 36 40 40 15 40 40 596 40 92 579, 572 166, 169 166, 169 172, 175 172, 175 178 62, 67 501 148, 151 501 154

Page 566 568 80 563, 570 80 146 55, 50 55, 50 55, 50 142, 144 142, 144 142, 144

NPN

PNP

MJE3439 MJE3442N5655

MJE340 2N5657 BD1592N4921 2N4922

MJE350

30/240 30/250 30/240

1.0

40 60 80

2N4918 2N4919

20/100 20/100 20/100 40/250 40/250 40/250 5/25

2N4923BD135 BD137

2N4920BD136 BD138

1.5

45 60 80 400

BD139 MJE13003 (Note 24.) BD237

BD140

2.0 0

80 100

BD238

25 min

MJE270 MJE271 1.5k min (Notes 23. & 24.) (Notes 23. & 24.)MJE181 MJE171 50/250 40/250 50/250 8.0 min

3.0

60 80

BD179 MJE182

BD180 MJE172

500 4.0 40 45 60

BUH51 (Note 24.) MJE521 BD437 BD439 BD677 (Note 23.) BD677A (Note 23.) BD787 2N5191 MJE800 (Note 23.) 2N6038 (Note 23.) MJE371 BD438 BD440 BD678 (Note 23.) BD678A (Note 23.) BD788 2N5194 MJE700 (Note 23.) 2N6035 (Note 23.)

40 min 40 min 25 min 750 min 750 min 20 min 25/100 750 min 750/18k

22. |hFE| @ 1.0 MHz 23. Darlington 24. Case 77, Style 3

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Plastic TO225AA Type (Formerly TO126 Type) (continued)Device Type ICCont Amps Max 4.0 VCEO(sus) Volts Min 80 hFE Min/Max 25/100 15 min 750 min 750 min 750 min 750 min 750/18k 750 min 40/120 45/180 @ IC Amp 1.5 2.0 1.5 2.0 1.5 2.0 2.0 1.5 0.2 2 0.15 typ 0.13 typ 0.07 typ 0.035 typ 2.0 2.0 40 65 1.7 typ 1.2 typ 2.0 1.0 (Note 25.) 1.0 (Note 25.) 25 Resistive Switching ts s Max 0.4 typ tf s Max 0.4 typ @ IC Amp 1.5 fT MHz Min 2.0 3.0 PD (Case) Watts @ 25C 40 36 40 40 40 596 40 596 40 92 40 15 15 172, 175 553 548

Page 62, 67 166, 169 172, 175 172, 175

NPN

PNP

2N5192 BD441 BD679 (Note 26.) BD679A (Note 26.)MJE802 (Note 26.)

2N5195 BD442 BD680 (Note 26.) BD680A (Note 26.)MJE702 (Note 26.)

MJE803 (Note 26.) 2N6039 (Note 26.)100

MJE703 (Note 26.) 2N6036 (Note 26.) BD682 (Note 26.) MJE253 MJE210

BD681 (Note 26.) MJE243

5.0 25 25. |hFE| @ 1.0 MHz 26. Darlington

MJE200

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DPAK Surface Mount Power PackagesDevice Type ICCont Amps Max 0.5 1.0 VCEO(sus) Volts Min 300 250 400 2.0 100 450 3.0 40 100 4.0 80 100 5.0 6.0 8.0 25 100 80 100 10 60 80 27. |hFE| @ 1.0 MHz 28. Darlington hFE Min/Max 30/240 30/150 30/150 @ IC Amp 0.05 0.3 0.3 2.0 2.0 1.0 1.0 2.0 0.2 2.0 3.0 4.0 4.0 4.0 5.0 2.0 2.0 1.7 1.0 typ 0.6 0.6 1.7 0.16 0.15 0.4 0.5 1.5 1.5 2.0 0.2 0.2 1.3 0.15 typ 0.3 0.3 1.2 0.04 0.04 0.15 0.14 2.0 1.5 0.5 0.3 0.3 2.0 1.0 1.0 1.0 2.0 1.0 2.0 3.0 5.0 4.0 3.0 10 10 10 25 (Note 27.) 13 typ 3.0 3.0 25 40 65 3.0 50 typ 4 (Note 27.) 2.0 Resistive Switching ts s Max tf s Max @ IC Amp fT MHz Min PD (Case) Watts @ 25C 15 15 15 20 395 25 15 15 20 456 40/180 45/180 15/75 40 min 1k/2k 20/100 1k min 12.5 12.5 20 20 20 401 20 20 446 429 423 418 442 448 407 433 433

Page

NPN

PNP

MJD340T4MJD47T4

MJD350T4

438 452 452

MJD50T4 MJD112T4 (Note 28.) MJD18002D2T4MJD31T4 MJD32T4

MJD117T4 (Note 28.)

1000 min 6.0 min 10 min 10 min 1k/2k

MJD31CT4 MJD6039T4 (Note 28.) MJD243T4 MJD200T4 MJD41CT4 MJD44H11T4 MJD122T4 (Note 28.) MJD3055T4 MJD44ET4 (Note 28.)

MJD32CT4 MJD6036T4 (Note 28.) MJD253T4 MJD210T4 MJD42CT4 MJD45H11T4 MJD127T4 (Note 28.) MJD2955T4

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Metal TO204AA (Formerly TO3)Device Type ICCont Amps Max 4.0 10 VCEO(sus) Volts Min (Note 31.) 250 140 250 12 15 100 60 hFE Min/Max 30 min 20/70 @ IC Amp 1.0 4.0 2.0 6.0 4.0 4.0 4.0 4.0 15 8.0 8.0 8.0 8.0 8.0 8.0 10 10 12 10 5.0 10 10 10 10 1.0 1.0 1.0 1.0 0.8 0.8 0.25 0.25 10 10 10 10 2.5 typ 1.5 2.5 typ 2.5 typ 0.5 2.5 typ 10 12 10 1.1 typ 1.2 typ 1.5 typ 1.2 typ 8.0 8.0 0.7 typ 0.3 typ 4.0 1.6 typ 0.7 typ 1.5 typ 0.3 typ 6.0 4.0 4.0 (Note 29.) 2.5 0.8 1.0 2.0 3.0 (Note 29.) 4.0 1.0 5.0 5.0 4.0 4.0 2.0 4.0 (Note 29.) 60 4.0 (Note 29.) 2.0 4.0 4.0 40 40 Resistive Switching ts s Max tf s Max @ IC Amp fT MHz Min 20 PD (Case) Watts @ 25C 150 117 200 150 102 115 115 180 200 175 325 150 200 250 250 250 250 150 160 112 140 160 112 250 200 200 200 200 340 87 87 118 118 60 46 76 346, 349 346, 349 352 357 38 31 25 25 337

Page 344 35 342

NPN

PNP

MJ150202N3442

MJ15021

MJ15011

MJ15012 2N6052 (Note 30.)

20/100 750/18k 20/70 20/70

2N3055 2N3055A

MJ2955

120 140 250 16 140

MJ15015MJ15001

MJ15016MJ15002

20/70 25/150 100 min 15/60 15/60 15/60 15/60 25/75 25/75 15/60

MJ11022 (Note 30.) 2N37732N5631

MJ11021 (Note 30.)2N6609 2N6031 MJ15023

200 250

MJ15022

MJ15024 MJ21194 MJ21196

MJ15025 MJ21193 MJ21195

20

60 80 90 100 140

2N3772 2N6283 (Note 30.)2N5038 2N6286 (Note 30.)

750/18k 20/100

2N6284 (Note 30.) MJ150032N5885

2N6287 (Note 30.) MJ150042N5883

750/18k 25/150 20/100 20/100 30/120 30/120

25

60 80 100 150

2N58862N6338

2N5884

2N6341

29. |hFE| @ 1.0 MHz 30. Darlington 31. When 2 voltages are given, the format is VCEO(sus)/VCES.

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Metal TO204AA (Formerly TO3) (continued)Device Type ICCont Amps Max 30 VCEO(sus) Volts Min (Note 34.) 40 60 hFE Min/Max 15/60 15/60 1k min @ IC Amp 15 15 20 7.5 20 10 25 20 25 50 50 80 50 1.2 1.1 0.25 0.25 50 80 8.0 1.8 1.1 0.5 typ 0.4 0.35 0.3 typ 25 20 25 2.0 1.0 10 Resistive Switching ts s Max tf s Max @ IC Amp fT MHz Min 2.0 2.0 4.0 (Note 32.) 2.0 4.0 (Note 32.) 3.0 (Note 32.) 8.0 8.0 2.0 PD (Case) Watts @ 25C 150 200 200 322 200 200 322 200 325 150 307 10 min 250 310 300 83 300 330 10 min 10 min 250 304 250 304 300 333 364, 362

Page 42 72

NPN

PNP

2N37712N5302 MJ11012 (Note 33.)

100 120 250 40 200 250 50 80 120 125

MJ802 MJ11016 (Note 33.) MJ11022 (Note 33.)BUV21 (Note 35.)

MJ4502 MJ11015 (Note 33.) MJ11021 (Note 33.)

25/100 1k min 400/15k 10 min

BUV22 (Note 35.) 2N5686 (Note 35.) MJ11032 (Note 33. & 35.) BUV20 (Note 35.) BUV60 (Note 35.) 2N5684 (Note 35.) MJ11033 (Note 33. & 35.)

15/60 400 min

60

80

MJ14002 (Note 35.)

MJ14003 (Note 35.)

15/100

32. |hFE| @ 1.0 MHz 33. Darlington 34. When 2 voltages are given, the format is VCEO(sus)/VCES. 35. Case 197A03 (TO204AE)

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Isolated Mounting Hole Plastic TO247Device Type ICCont Amps Max 8.0 16 16 15 VCEO(sus) Volts Min 150 250 250 230 hFE Min/Max 15 min 20/60 20/60 60/175 @ IC Amp 8.0 8.0 8.0 5.0 Inductive Switching ts s Max tf s Max @ IC Amp fT MHz Min 4.0 4.0 4.0 30 PD (Case) Watts @ 25C 100 200 200 200

NPN MJW21192 MJW21194* MJW21196* MJW3281A*

PNP MJW21191 MJW21193* MJW21195* MJW1302A*

Page 660 665 671 677

D2PAKDevice Type ICCont Amps Max 5.0 6.0 8.0 VCEO(sus) Volts Min 450/1000 100 80 MJB44H11T4 hFE Min/Max 6.0 MJB42CT4 MJB45H11T4 15/75 40/100 @ IC Amp 2.0 3.0 4.0 0.5 typ 0.14 5.0 Inductive Switching ts s Max 2.4 tf s Max 0.175 @ IC Amp 2.5 fT MHz Min 13 typ 3.0 40 PD (Case) Watts @ 25C 75 65 50

NPN MJB18004D2T4

PNP

Page 367 381 388

SOT223Device Type ICCont Amps Max 3.0 0.5 VCEO(sus) Volts Min 30 30 hFE Min/Max 50 30/240 @ IC Amp 1.0 0.05 Inductive Switching ts s Max tf s Max @ IC Amp fT MHz Min PD (Case) Watts @ 25C 0.8 0.8

Page

NPN MMJT9410T1

PNP MMJT9435T1 MMJT350T1

694, 699 692

SO8 (Dual Transistors)Device Type ICCont Amps Max 3.0 VCEO(sus) Volts Min 30 hFE Min/Max 50 @ IC Amp 1.0 Inductive Switching ts s Max tf s Max @ IC Amp fT MHz Min 30 PD (Case) Watts @ 25C 2.0

Page 682, 687

NPN MMDJ3N03BJTR2

PNP MMDJ3P03BJTR2

*Available in Q2, 2001.

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AudioGENERAL DESIGN CURVES FOR POWER AUDIO OUTPUT STAGESV(BR)CEO Required on Output and Driver Transistor versus Output Power for 4, 8 and 18 Ohm Loads 300 V (BR) CEO (VOLTS) 16 OHMS 8 OHMS 4 OHMS PEAK OUTPUT CURRENT (AMPS) 500 50 30 8 OHMS 16 OHMS 4 OHMS Output Transistor Peak Collector Current versus Output Power for 4, 8 and 16 Ohm Loads

100 70 50 30

10 5.0 3.0

10 10

30

50

100

300

500

1000

1.0 10

30

50

100

300

500

1000

OUTPUT POWER (WATTS)

OUTPUT POWER (WATTS)

Another important parameter that must be considered before selecting the output transistors is the safeoperating area these devices must withstand. For a complete discussion see Application Note AN485.

Recommended Power Transistors for Audio/Servo LoadsRMS Power Output To 25 W PD Watts @ 25C 50 50 120 200 180 250 150 250 150 250 200 200 100 200 200 200 hFE @ Min/Max 20 min 50 min 20/70 25/150 20/70 25/150 30 min 15/60 60/175 25/75 25/75 25/75 15 min 20/60 25/60 60/175 IC Amps 4.0 1.0 4.0 4.0 4.0 5.0 1.0 8.0 7.0 8.0 8.0 8.0 4.0 8.0 8.0 5.0 fT MHz Typ 30 30 3.0 3.0 3.0 3.0 30 4.0 30 4.0 4.0 4.0 4.0 4.0 4.0 30 ISB Volts/Amps 14/3.6 50/1.0 60/2.0 40/5.0 60/3.0 100/1.0 50/3.0 80/2.2 40/4.0 100/2.0 100/2.0 100/2.0 50/3.0 50/4.0 50/4.0 50/4.0

NPN MJE15030 MJE15032

PNP MJE15031 MJE15033 MJ2955A MJ15002 MJ15016 MJ15004 MJ15021 MJ15025 MJL1302A MJ21193 MJL21193 MJL21195 MJW21191 MJW21193 MJW21195 MJW1302A

Case TO220 TO220 TO204 TO204 TO204 TO204 TO204 TO204 340G02 TO204 340G02 340G02 340K01 340K01 340K01 340K01

VCEO 150 250 120 140 120 140 250 250 200 250 200 200 150 250 250 200

Page 492 497 25 337 25 340 344 346, 349 655 352 644 649 660 665 671 677

25 to 50 W

2N3055A MJ15001

50 to 100 W

MJ15015 MJ15003 MJ15020

Over 100 W

MJ15024 MJL3281A MJ21194 MJL21194 MJL21196 MJW21192 MJW21194 MJW21196 MJW3281A

The Power Transistors shown are provided for reference only and show device capability. The final choice of the Power Transistors used is left to the circuit designer and depends upon the particular safeoperating area required and the mounting and heat sinking configuration used.

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Bipolar Power Transistors for Electronic Lamp BallastsPlastic TO220ABICCont Amps Max 2.0 VCEO(sus) Volts Min 400 450 4.0 5.0 500 400 400 450 450 6.0 400 450 8.0 400 450 10 15 400 400 VCES Volts Min 700 1000 800 700 700 1000 1000 700 1000 700 1000 700 700 IC Operating Amps 0.8 1.0 2.0 2.0 2.0 2.0 2.0 3.0 3.0 4.5 4.5 5.0 10 hFE min @ IC Operating VCE = 1.0 V 10 6.0 8.0 typ 7.0 10 6.0 6.0 8.0 6.0 8.0 6.0 10 typ 8.0 typ Inductive Switching @ IC Operating Tsi Min/Max (s) 2.6 / 3.8 / 2.75 / 2.5 2.6 / 3.8 1.95 / 2.25 / 2.5 2.1 / 2.4 2.6 / 3.8 / 3.2 2.6 / 3.8 / 3.2 / 3.0 / 2.75 PD (Case) Watts @ 25C 50 50 50 75 75 75 75 100 100 125 125 100 150

Page 279 505 246 296 286 522 512 263 531 272 538 226 236

Device Type BUL44 MJE18002 BUH50 BUL45 BUL45D2* MJE18004 MJE18004D2* BUL146 MJE18006 BUL147 MJE18008 BUH100 BUH150

BUHXXX Series are specified for Halogen applications. *D2 suffix indicates transistor with built in CE freewheeling diode and antisaturation network.

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Bipolar Power Transistors for Electronic Lamp BallastsCase 221D-02 is UL RECOGNIZED for its isolation feature. Case 221D-02 has been evaluated to 3500 volts RMS. Actual isolation rating depends on specific mounting position and maintaining required strike and creepage distances.

Plastic (Isolated TO-220 Type)ICCont Amps Max 5.0 6.0 8.0 VCEO(sus) Volts Min 450 400 450 VCES Volts Min 1000 700 1000 IC Operating Amps 2.0 3.0 4.5 hFE min @ IC Operating VCE = 1.0 V 6.0 8.0 6.0 Inductive Switching @ IC Operating Tsi Min/Max (s) / 2.5 2.6 / 3.8 / 3.2 PD (Case) Watts @ 25C 35 40 45

Page 522 263 538

Device Type MJF18004 BUL146F MJF18008

Surface Mount Power Packages DPAKICCont Amps Max 2.0 VCEO(sus) Volts Min 400 VCES Volts Min 700 IC Operating Amps 0.8 hFE min @ IC Operating VCE = 1.0 V 20 typ Inductive Switching @ IC Operating Tsi Min/Max (s) 2.05 / 2.35 PD (Case) Watts @ 25C 25

Page 216

Device Type BUD44D21*

Surface Mount Power Packages DPAKVCEO( ) CEO(sus) /VCES Volts Min 450/1000 Device Type hFE Min/Max 6.0 @ IC Amp 1.0 Inductive Switching ts s Max 1.2 tf s Max 0.150 @ IC Amp 1.0 A fT MHz Min 13 typ PD (Case) Watts @ 25C 25

ICCont Amps Max 2.0

NPN MJD18002D2T4

PNP

Page 407

D2PAKVCEO( ) CEO(sus) /VCES Volts Min 450/1000 Device Type hFE Min/Max 6.0 @ IC Amp 2.0 Inductive Switching ts s Max 2.4 tf s Max 0.175 @ IC Amp 2.5 A fT MHz Min 13 typ PD (Case) Watts @ 25C 75

ICCont Amps Max 5.0

Page 367

NPN MJB18004D2T4

PNP

Plastic TO225AA Type (Formerly TO126 Type)ICCont Amps Max 1.5 3.0 VCEO(sus) Volts Min 400 500 VCES Volts Min 700 800 IC Operating Amps 1.0 1.0 hFE min @ IC Operating VCE = 1.0 V 6.0 typ 8.0 Inductive Switching @ IC Operating Tsi Min/Max (s) / 3.0 / 3.75 PD (Case) Watts @ 25C 40 50

Page 461 254

Device Type MJE13003 (Note 36.) BUH51 (Note 36.)

36. Case 77, Style 3 BUHXXX Series are specified for Halogen applications. *D2 suffix indicates transistor with built in CE freewheeling diode and antisaturation network.

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CHAPTER 2 Data Sheets

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ON Semiconductort NPN

Complementary Silicon High-Power Transistors. . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.

2N3055A MJ15015 * PNP MJ15016 **ON Semiconductor Preferred Device

CurrentGain BandwidthProduct @ IC = 1.0 Adc fT = 0.8 MHz (Min) NPN = 2.2 MHz (Min) PNP Safe Operating Area Rated to 60 V and 120 V, Respectively

*MAXIMUM RATINGSRating

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

Symbol VCEO VCBO VCEV 2N3055A 60 MJ15015 MJ15016 120 200 200 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage 100 100 CollectorEmitter Voltage Base Reversed Biased EmitterBase Voltage VEBO IC IB 7.0 15 Collector Current Continuous Base Current 7.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 115 0.65 180 1.03 Watts W/_C _C TJ, Tstg 65 to +200

CASE 107 TO204AA (TO3)

THERMAL CHARACTERISTICSCharacteristic

Symbol RJC

Max

Max

Unit

Thermal Resistance, Junction to Case

1.52

0.98

_C/W

*Indicates JEDEC Registered Data. (2N3055A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

25

May, 2001 Rev. 4

Publication Order Number: 2N3055A/D

2N3055A MJ15015 MJ15016PD(AV), AVERAGE POWER DISSIPATION (W) 200

150 MJ15015 MJ15016

100

50

2N3055A

0

0

25

50 75 100 125 150 TC, CASE TEMPERATURE (C)

175

200

Figure 1. Power Derating

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(1) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2%. *Indicates JEDEC Registered Data. (2N3055A) *SWITCHING CHARACTERISTICS (2N3055A only) *DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS (1) *SECOND BREAKDOWN OFF CHARACTERISTICS (1)

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

RESISTIVE LOAD

Fall Time

Storage Time

Rise Time

Delay Time

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

CurrentGain Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) (IC = 15 Adc, IB = 7.0 Adc)

DC Current Gain (IC = 4.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)

Second Breakdown Collector Current with Base Forward Biased (t = 0.5 s nonrepetitive) 2N3055A MJ15015, MJ15016 (VCE = 60 Vdc)

Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0)

Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)

*Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)

Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0 Vdc) (VCE = 60 Vdc, VBE(off) = 0 Vdc)

*CollectorEmitter Sustaining Voltage (IC = 200 mAdc, IB = 0)

Characteristic

2N3055A MJ15015 MJ15016

(VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc, 0 4 Adc y y tp = 25 s Duty Cycle v 2%

http://onsemi.com2N3055A, MJ15015 MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 2N3055A MJ15015, MJ15016 VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEV ICEV Cob hFE IS/b fT td ts tr tf 1.95 3.0 Min 60 120 0.8 2.2 0.7 10 20 5.0 60 Max 600 6.0 3.0 4.0 0.5 6.0 18 1.8 1.1 3.0 5.0 5.0 0.2 5.0 1.0 0.7 0.1 30 6.0 70 70 mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc pF s s s s

27

2N3055A MJ15015 MJ15016VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 hFE , DC CURRENT GAIN 70 50 30 20 10 7 5 3 2 VCE = 4.0 V TJ = 150C 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IB, BASE CURRENT (AMP) 1 2 5 IC = 1 A 4A 8A TJ = 25C

-55C 25C

0.2

0.3 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMP)

7

10

15

Figure 2. DC Current GainBANDWIDTH PRODUCT (MHz) 3.5 3 V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0 0.2 0.3 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 4 V VCE(sat) @ IC/IB = 10 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMP) 10

Figure 3. Collector Saturation Region

TC = 25C

5.0

MJ15016

2.0

f T, CURRENT-GAIN

2N3055A MJ15015

1.0

0.1

0.2

0.3

0.5

1.0

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 4. On Voltages

Figure 5. CurrentGain Bandwidth Product

VCC +30 V t, TIME ( s) 7.5 30 -11 V tr, tf 10 ns DUTY CYCLE = 1.0% -5 V 1N6073 SCOPE

10 7 5 3 2

VCC = 30 V IC/IB = 10 TJ = 25C tr

25 s +13 V 0

1 0.7 0.5 0.3 0.2 0.1 0.2 0.3 td 5 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 7 10 15

Figure 6. Switching Times Test Circuit (Circuit shown is for NPN)

Figure 7. TurnOn Time

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2N3055A MJ15015 MJ1501610 7 5 2 0.1 0.7 0.5 0.3 0.2 0.1 VCC = 30 IC/IB = 10 IB1 = IB2 TJ = 25C 0.2 0.3 2 0.5 0.7 1 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 15 tf ts C, CAPACITANCE (pF) 3 t, TIME ( s) 400 TJ = 25C 200 Cib 2N3055A MJ15015 MJ15016

100

50 30 20 1.0 2.0

Cob

5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS)

500 1000

Figure 8. TurnOff Times

Figure 9. Capacitances

COLLECTOR CUTOFF REGIONNPN10,000 IC, COLLECTOR CURRENT ( A) 1000 100 10 1.0 0.1 0.01 +0.2 REVERSE 25C +0.1 0 -0.1 -0.2 -0.3 -0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) -0.5 TJ = 150C 100C IC = ICES FORWARD VCE = 30 V IC, COLLECTOR CURRENT ( A) 1000 100 10 1.0 0.1 REVERSE 0.01 25C -0.1 0 +0.1 +0.2 +0.3 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.5 TJ = 150C

PNPVCE = 30 V

100C IC = ICES FORWARD

0.001 -0.2

Figure 10. 2N3055A, MJ1501520 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) 30 s 10 100 s 1 ms 20

Figure 11. MJ15016

0.1 ms 10 5.0 1.0 ms 2.0 1.0 0.5 0.2 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 15 100 ms

5

2

BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT

100 ms dc

1

dc 120

10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

20 30 60 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area 2N3055A

Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016

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2N3055A MJ15015 MJ15016There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.

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ON Semiconductort NPN

Complementary Silicon Power Transistors. . . designed for generalpurpose switching and amplifier applications.

2N3055 * PNP MJ2955 **ON Semiconductor Preferred Device

DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage Excellent Safe Operating AreaMAXIMUM RATINGS

VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTSValue 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc

PD, POWER DISSIPATION (WATTS)

Rating Symbol VCEO VCER VCB VEB IC IB CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 100 7 Collector Current Continuous Base Current 15 7 Total Power Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg 65 to +200


THERMAL CHARACTERISTICSCharacteristic

Symbol RJC

Max

Unit


1.52

_C/W

160 140 120 100 80 60 40 20 0

0

25

50

75 100 125 150 TC, CASE TEMPERATURE (C)

175

200

Figure 1. Power DeratingPreferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001

31

April, 2001 Rev. 2

Publication Order Number: 2N3055/D

*Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

DYNAMIC CHARACTERISTICS

SECOND BREAKDOWN

*ON CHARACTERISTICS (1)

*OFF CHARACTERISTICS

*SmallSignal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz)

*SmallSignal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

Current Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Nonrepetitive)

BaseEmitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc)

DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

CollectorEmitter Sustaining Voltage (1) (IC = 200 mAdc, RBE = 100 Ohms)

CollectorEmitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)

Characteristic

2N3055 MJ2955

http://onsemi.comVCEO(sus) VCER(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEX hFE fhfe Is/b hfe fT 2.87 Min 2.5 20 5.0 10 15 70 60 Max 120 1.5 1.1 3.0 5.0 1.0 5.0 0.7 70 mAdc mAdc mAdc MHz Unit kHz Adc Vdc Vdc Vdc Vdc

32

2N3055 MJ295520 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 s 250 s

2N3055, MJ295550 s dc 1 ms

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.

Figure 2. Active Region Safe Operating Area

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2N3055 MJ2955NPN 2N3055500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 TJ = 150C 25C -55C VCE = 4.0 V hFE , DC CURRENT GAIN 100 70 50 30 20 25C -55C 200 TJ = 150C VCE = 4.0 V

PNP MJ2955

0.1

0.2

0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)

5.0 7.0

10

10

0.1

0.2


5.0 7.0

10

Figure 3. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25C 1.6 1.2 0.8 0.4 0 5.0 IC = 1.0 A 4.0 A 8.0 A


2.0

2.0 TJ = 25C 1.6 1.2 0.8 0.4 0 5.0 IC = 1.0 A 4.0 A 8.0 A

10

20

50 100 200 500 IB, BASE CURRENT (mA)

1000 2000

5000

10

20

50 100 200 500 IB, BASE CURRENT (mA)

1000 2000

5000


1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V TJ = 25C

2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) 1.2 0.8 0.4 0

VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10

IC, COLLECTOR CURRENT (AMPERES)

IC, COLLECTOR CURRENT (AMP)

Figure 5. On Voltages

http://onsemi.com34

ON Semiconductort

High-Power Industrial TransistorsNPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

2N344210 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS

Collector Emitter Sustaining Voltage VCEO(sus) = 140 Vdc (Min) Excellent Second Breakdown Capability


*MAXIMUM RATINGSRating Symbol VCEO VCB VEB IC IB Value 140 160 7.0 Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Base Current Continuous Peak 10 15** 7.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 117 0.67 Watts W/_C _C TJ, Tstg 65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol RJC

Max 1.5

Unit


_C/W

* Indicates JEDEC Registered Data. ** This data guaranteed in addition to JEDEC registered data.


35

March, 2001 Rev. 10


*Indicates JEDEC Registered Data. NOTES: 1. Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%. 2. fT = |hfe| ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS

PD /PD(MAX), POWER DISSIPATION (NORMALIZED)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

SmallSignal Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

CurrentGain Bandwidth Product (2) (IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)

BaseEmitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

Collector Cutoff Current (VCE = 140 Vdc, IB = 0)

CollectorEmitter Sustaining Voltage (IC = 200 mAdc, IB = 0)

Characteristic

0.2

0.4

0.6

0.8

1.0

0

0

25

http://onsemi.com50


2N3442

75 100 125 150 TC, CASE TEMPERATURE (C)

36 VCEO(sus) Symbol VCE(sat) VBE(on) ICEO IEBO ICEX hFE hfe fT 175 200 Min 140 20 7.5 12 80 Max 200 5.7 5.0 5.0 5.0 30 72 70 mAdc mAdc mAdc Unit kHz Vdc Vdc Vdc

2N3442ACTIVE REGION SAFE OPERATING AREA INFORMATION20 IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 3.0 TJ = 200C dc 30 s 50 s 100 s 1.0 ms 100 ms 10 s

CURRENT LIMIT THERMAL LIMIT @ TC = 25C SINGLE PULSE SECOND BREAKDOWN LIMIT

There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.200

50 70 100 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. 2N3442

200 hFE, DC CURRENT GAIN 100 60 40 20 10 6.0 4.0 0.1 0.2 25C

TJ = 150C

VCE = 4.0 V


400

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2.0 TJ = 25C 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1.0 k 2.0 k IC = 1.0 A 2.0 A 4.0 A 8.0 A

-55C


5.0 7.0 10


Figure 4. CollectorSaturation Region

http://onsemi.com37

ON Semiconductort

High Power NPN Silicon Power Transistors. . . designed for linear amplifiers, series pass regulators, and inductive switching applications.

2N3771* 2N3772*ON Semiconductor Preferred Device

Forward Biased Second Breakdown Current Capability


*MAXIMUM RATINGSRating Symbol VCEO VCEX VCB VEB IC IB 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 100 7.0 20 30 5.0 30 30 Collector Current Continuous Peak Base Current Continuous Peak 7.5 15 5.0 15 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 150 0.855 Watts W/_C _C TJ, Tstg 65 to +200

IS/b = 3.75 Adc @ VCE = 40 Vdc 2N3771 = 2.5 Adc @ VCE = 60 Vdc 2N3772

20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS


THERMAL CHARACTERISTICSCharacteristics

Symbol JC

2N3771, 2N3772 1.17

Unit


_C/W

*Indicates JEDEC Registered Data.

200 175

150

125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200

Figure 1. Power DeratingPreferred devices are ON Semiconductor recommended choices for future use and best overall value.


38

March, 2001 Rev. 9


*Indicates JEDEC Registered Data. (1) Pulse Test: 300 s, Rep. Rate 60 cps.


SECOND BREAKDOWN

*DYNAMIC CHARACTERISTICS

*ON CHARACTERISTICS

OFF CHARACTERISTICS

Second Breakdown Energy with Base Forward Biased, t = 1.0 s (nonrepetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc)


CurrentGain Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)

BaseEmitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 15 Adc, IB = 1.5 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) (IC = 20 Adc, IB = 4.0 Adc)

DC Current Gain (1) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc)

*Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) (VBE = 7.0 Vdc, IC = 0)

*Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)

*Collector Cutoff Current (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

*Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) (VCE = 25 Vdc, IB = 0)

CollectorEmitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms)

CollectorEmitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)

*CollectorEmitter Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0)

(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

Characteristic

2N3771 2N3772

http://onsemi.com2N3771 2N3772 2N3771 2N3772 2N6257 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEV hFE IS/b hfe fT 3.75 2.5 Min 0.2 5.0 5.0 40 15 15 45 70 50 80 40 60 Max 2.7 2.2 2.0 1.4 4.0 4.0 5.0 5.0 2.0 5.0 2.0 5.0 4.0 10 10 60 60 10 10 mAdc mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc Vdc Vdc

39

2N3771 2N3772r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.05 0.01 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000

0.1 0.07 0.05 0.03 0.02

0.01 0.02

0.1

0.2

Figure 2. Thermal Response 2N3771, 2N377240 IC, COLLECTOR CURRENT (AMP) 30 20 2N3771 2N3772, (dc) dc 40 s 100 s

200 s TC = 25C 1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2.0 2.0 3.0 5.0 7.0 10 50 70 100 1.0 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max).

Figure 3. ActiveRegion Safe Operating Area 2N3771, 2N3772

VCC +30 V 25 s +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB 51 D1 RC SCOPE t, TIME ( s)

10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.3 3.0 0.5 0.7 1.0 2.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 td tr VCC = 30 IC/IB = 10 TJ = 25C VBE(off) = 5.0 V

RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA

Figure 4. Switching Time Test Circuit


http://onsemi.com40

2N3771 2N3772100 50 20 10 t, TIME ( s) 5.0 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 tf ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 2000 TJ = 25C

C, CAPACITANCE (pF)

1000 700 500

Cib Cob

300 200 0.1

0.2

0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

Figure 6. TurnOff TimeVCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.3 TJ = 150C 25C VCE = 4.0 V 2.0 1.6 1.2 0.8 0.4 0 0.01 0.02

Figure 7. CapacitanceTJ = 25C IC = 2.0 A 5.0 A 10 A 20 A

-55C

0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP)

20

30


5.0

10



http://onsemi.com41

ON Semiconductort

High Power NPN Silicon Power Transistors. . . designed for linear amplifiers, series pass regulators, and inductive switching applications.

2N3771* 2N3772*ON Semiconductor Preferred Device

Forward Biased Second Breakdown Current Capability


*MAXIMUM RATINGSRating Symbol VCEO VCEX VCB VEB IC IB 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 100 7.0 20 30 5.0 30 30 Collector Current Continuous Peak Base Current Continuous Peak 7.5 15 5.0 15 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 150 0.855 Watts W/_C _C TJ, Tstg 65 to +200

IS/b = 3.75 Adc @ VCE = 40 Vdc 2N3771 = 2.5 Adc @ VCE = 60 Vdc 2N3772

20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS


THERMAL CHARACTERISTICSCharacteristics

Symbol JC

2N3771, 2N3772 1.17

Unit


_C/W

*Indicates JEDEC Registered Data.

200 175

150

125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200

Figure 1. Power DeratingPreferred devices are ON Semiconductor recommended choices for future use and best overall value.


42

March, 2001 Rev. 9


*Indicates JEDEC Registered Data. (1) Pulse Test: 300 s, Rep. Rate 60 cps.


SECOND BREAKDOWN

*DYNAMIC CHARACTERISTICS

*ON CHARACTERISTICS

OFF CHARACTERISTICS

Second Breakdown Energy with Base Forward Biased, t = 1.0 s (nonrepetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc)


CurrentGain Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)

BaseEmitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc)

CollectorEmitter Saturation Voltage (IC = 15 Adc, IB = 1.5 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) (IC = 20 Adc, IB = 4.0 Adc)

DC Current Gain (1) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc)

*Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) (VBE = 7.0 Vdc, IC = 0)

*Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)

*Collector Cutoff Current (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

*Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) (VCE = 25 Vdc, IB = 0)


CollectorEmitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms)

*CollectorEmitter Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0)

(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

Characteristic

2N3771 2N3772

http://onsemi.com2N3771 2N3772 2N3771 2N3772 2N6257 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEV hFE IS/b hfe fT 3.75 2.5 Min 0.2 5.0 5.0 40 15 15 45 70 50 80 40 60 Max 2.7 2.2 2.0 1.4 4.0 4.0 5.0 5.0 2.0 5.0 2.0 5.0 4.0 10 10 60 60 10 10 mAdc mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc Vdc Vdc

43

2N3771 2N3772r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2

D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.05 0.01 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000

0.1 0.07 0.05 0.03 0.02

0.01 0.02

0.1

0.2

Figure 2. Thermal Response 2N3771, 2N377240 IC, COLLECTOR CURRENT (AMP) 30 20 2N3771 2N3772, (dc) dc 40 s 100 s

200 s TC = 25C 1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2.0 2.0 3.0 5.0 7.0 10 50 70 100 1.0 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max).

Figure 3. ActiveRegion Safe Operating Area 2N3771, 2N3772

VCC +30 V 25 s +11 V 0 -9.0 V tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB 51 D1 RC SCOPE t, TIME ( s)

10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.3 3.0 0.5 0.7 1.0 2.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 td tr VCC = 30 IC/IB = 10 TJ = 25C VBE(off) = 5.0 V

RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA

Figure 4. Switching Time Test Circuit


http://onsemi.com44

2N3771 2N3772100 50 20 10 t, TIME ( s) 5.0 2.0 1.0 0.5 0.2 0.1 0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 tf ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 2000 TJ = 25C

C, CAPACITANCE (pF)

1000 700 500

Cib Cob

300 200 0.1

0.2

0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)

50

100

Figure 6. TurnOff TimeVCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.3 TJ = 150C 25C VCE = 4.0 V 2.0 1.6 1.2 0.8 0.4 0 0.01 0.02

Figure 7. CapacitanceTJ = 25C IC = 2.0 A 5.0 A 10 A 20 A

-55C

0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP)

20

30


5.0

10



http://onsemi.com45

ON Semiconductort

Complementary Silicon Power TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.

2N3773 * 2N6609*ON Semiconductor Preferred Device

NPN PNP

High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A For Low Distortion Complementary Designs

16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS


*MAXIMUM RATINGSRating Symbol VCEO VCEX Value 140 160 160 7 Unit Vdc Vdc Vdc Vdc Adc Adc Collector Emitter Voltage CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage VCBO VEBO IC IB Collector Current Continuous Peak (1) Base Current Continuous Peak (1) 16 30 4 15 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 150 0.855 Watts W/_C _C TJ, Tstg 65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol RJC

Max

Unit


1.17

_C/W

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001

46

March, 2001 Rev. 9


(2) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2%. *Indicates JEDEC Registered Data. SECOND BREAKDOWN CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) OFF CHARACTERISTICS (2)


Second Breakdown Collector Current with Base Forward Biased t = 1 s (nonrepetitive), VCE = 100 V, See Figure 12

*SmallSignal Current Gain (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)

Magnitude of CommonEmitter SmallSignal, ShortCircuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz)

*BaseEmitter On Voltage (IC = 8 Adc, VCE = 4 Vdc)

CollectorEmitter Saturation Voltage *(IC = 8 Adc, IB = 800 mAdc) (IC = 16 Adc, IB = 3.2 Adc)

DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc)

*Emitter Cutoff Current (VBE = 7 Vdc, IC = 0)

Collector Cutoff Current (VCB = 140 Vdc, IE = 0)

*Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

*Collector Cutoff Current (VCE = 120 Vdc, IB = 0)


*CollectorEmitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)

*CollectorEmitter Breakdown Voltage (IC = 0.2 Adc, IB = 0)

Characteristic

2N3773 2N6609

http://onsemi.comVCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| hFE IS/b hfe Min 150 160 140 1.5 40 15 5 4 Max 2.2 1.4 4 2 10 60 10 5 2 mAdc mAdc mAdc mAdc Unit Adc Vdc Vdc Vdc Vdc Vdc

47

2N3773 2N6609NPN300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 VCE = 4 V 25C -55C 150C 300 200 25C hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE = 4 V -55C 150C

PNP




1.6 1.2 0.8 0.4

IC = 4 A


2.0

2.0 1.6 1.2 0.8 0.4 TC = 25C 0 0.05 0.07 0.1 IC = 8 A IC = 4 A

IC = 16 A

IC = 8 A IC = 16 A

TC = 25C 0 0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS)

2.0 3.0

0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS)

2.0 3.0

5.0



2.0 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) 1.2 0.8 0.4 0 0.2 0.3 VBE(sat) 25C 150C 150C VCE(sat) 2.0 3.0 25C 5.0 7.0 10 20 V, VOLTAGE (VOLTS)

2.0 IC/IB = 10 1.6 1.2 0.8 0.4 VCE(sat) 0.5 0.7 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

VBE(sat) 25C 150C 150C 25C

Figure 14. On Voltage

Figure 15. On Voltage

http://onsemi.com48

2N3773 2N660930 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C, SINGLE PULSE SECOND BREAKDOWN LIMIT dc 10 s 40 s 100 s 200 s 1.0 ms 100 ms 500 ms

0.05 0.03 3.0

200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 16. Forward Bias Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse100 POWER DERATING FACTOR (%) 80 60 40 20 0 THERMAL DERATING

limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

0

40

80 120 TC, CASE TEMPERATURE (C)

160

200


http://onsemi.com49

ON Semiconductort

Medium-Power Plastic PNP Silicon Transistors. . . designed for driver circuits, switching, and amplifier applications. These highperformance plastic devices feature:

2N4918 thru 2N4920 **ON Semiconductor Preferred Device

Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to NPN 2N4921, 2N4922, 2N4923

3 AMPERE GENERALPURPOSE POWER TRANSISTORS 4080 VOLTS 30 WATTS

*MAXIMUM RATINGSRatings Symbol VCEO VCB VEB IC* IB 2N4918 40 40 2N4919 60 60 2N4920 80 80 Unit Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage 5.0 1.0 3.0 1.0 Collector Current Continuous (1) Base Current Total Power Dissipation @ TC = 25C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C TJ, Tstg 65 to +150

CASE 7709 TO225AA TYPE

THERMAL CHARACTERISTICS (2)Characteristic

Symbol JC

Max

Unit


4.16

_C/W

*Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual currenthandling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001

50

March, 2001 Rev. 9


2N4918 thru 2N492040 PD, POWER DISSIPATION (WATTS)

30

20

10

0

25

50

75 100 TC, CASE TEMPERATURE (C)

125

150


http://onsemi.com51

2N4918 thru 2N4920

Cjd 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 110 may be found at any case temperature by using the appropriate curve on Figure 109.

TJ(pk) may be calculated from the data in Figure 112. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turnoff with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 111). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

4 GAIN 4 3 TC 125C LC = 500 H

10 1 ms 1 DC 5 ms 10 s

1 s

2

EXTENDED SOA

0.1

1 0V 200

-5 V -1.5 V 900

0.01

10

100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

0

300 400 500 600 700 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)


Figure 111. Reverse Bias Safe Operating Area

http://onsemi.com261

BUH51TYPICAL THERMAL RESPONSE1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)

t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10

t1

100

1000

Figure 112. Typical Thermal Response (ZJC(t)) for BUH51


ON Semiconductort

SWITCHMODENPN Bipolar Power Transistor For Switching Power Supply ApplicationsThe BUL146/BUL146F have an applications specific stateoftheart die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed transistors offer the following:

BUL146 BUL146FPOWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS

Improved Efficiency Due to Low Base Drive Requirements:High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for TurnOff (No Current Tail) Full Characterization at 125C Two Packages Choices: Standard TO220 or Isolated TO220 Parametric Distributions are Tight and Consistent LottoLot BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369BUL146 CASE 221A09 TO220AB

MAXIMUM RATINGSRating CollectorEmitter Sustaining Voltage CollectorEmitter Breakdown Voltage EmitterBase Voltage Collector Current Continuous Peak(1) Base Current Continuous Peak(1) RMS Isolation Voltage: (2) (for 1 sec, R.H. 30%, TC = 25 C) Total Device Dissipation Derate above 25C (TC = 25C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL1 VISOL2 VISOL3 PD TJ, Tstg 100 0.8 BUL146 400 700 9.0 6.0 15 4.0 8.0 4500 3500 1500 40 0.32 BUL146F Unit Vdc Vdc Vdc Adc Adc Volts

Watts W/C C

Operating and Storage Temperature

65 to 150

CASE 221D02 ISOLATED TO220 TYPE BUL146F

THERMAL CHARACTERISTICS RatingThermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds

SymbolRJC RJA TL

BUL1461.25 62.5 260

BUL146F 3.125 62.5

UnitC/W C


263

June, 2001 Rev. 5

Publication Order Number: BUL146/D

BUL146 BUL146FELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. VCEO(sus) ICEO ICES 400 100 100 500 100 100 Vdc Adc Adc Symbol Min Typ Max Unit

IEBO

Adc

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)Characteristic ON CHARACTERISTICS BaseEmitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) BaseEmitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) CollectorEmitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125C) CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125C) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) (TC = 125C) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) (TC = 125C) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) (TC = 125C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation Volty a c Sa u a o o age: Determined 1.0 s and 3.0 3 0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB1 = 300 mAdc VCC = 300 V) (IC = 3.0 Adc IB1 = 0.6 Adc 06 VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) fT COB CIB VCE(dsat) 14 95 1000 2.5 6.5 0.6 2.5 3.0 7.0 0.75 1.4 150 1500 V MHz pF pF VBE(sat) VCE(sat) 14 12 12 8.0 7.0 10 0.82 0.93 0.22 0.20 0.30 0.30 30 20 20 13 12 20 1.1 1.25 0.5 0.5 0.7 0.7 34 Vdc Vdc Symbol Min Typ Max Unit

hFE


BUL146 BUL146FSWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) TurnOn Time TurnOff Time (TC = 125C) TurnOn Time TurnOff Time (TC = 125C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) tc (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) tfi (TC = 125C) tsi tc (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) tfi (TC = 125C) tsi tc (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) tfi (TC = 125C) tsi 80 2.6 115 120 1.35 1.75 200 210 85 100 1.75 2.25 175 200 210 4.5 230 400 200 2.5 350 150 2.5 300 180 3.8 350 ns s ns ns s ns ns s ns (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) ton (TC = 125C) toff (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) ton (TC = 125C) toff 100 90 1.35 1.90 90 100 1.7 2.1 200 2.5 150 2.5 ns s ns s


BUL146 BUL146FTYPICAL STATIC CHARACTERISTICS100 TJ = 125C h FE , DC CURRENT GAIN TJ = 25C 10 TJ = - 20C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125C TJ = 25C 10 TJ = - 20C VCE = 5 V

1 0.01

0.1

1

10

1 0.01

0.1

1

10



Figure 1. DC Current Gain @ 1 Volt2 TJ = 25C 10

Figure 2. DC Current Gain @ 5 Volts

V CE , VOLTAGE (V)

V CE , VOLTAGE (V)

1

1

IC = 1 A

2A

3A

5A

6A

0.1

IC/IB = 10 IC/IB = 5 TJ = 25C TJ = 125C 0.1 1 10

0 0.01

0.1

1

10

0.01 0.01

IB, BASE CURRENT (mA)

IC COLLECTOR CURRENT (AMPS)


Figure 4. CollectorEmitter Saturation Voltage

1.2 1.1 1 V BE , VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 TJ = 125C 0.1 1 IC/IB = 5 IC/IB = 10 10 IC, COLLECTOR CURRENT (AMPS) TJ = 25C

10000 Cib 1000 C, CAPACITANCE (pF) TJ = 25C f = 1 MHz

100 Cob 10

0.4 0.01

1

1

10

100

1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. BaseEmitter Saturation Region

Figure 6. Capacitance


BUL146 BUL146FTYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)1000 800 t, TIME (ns) 600 400 200 0 IC/IB = 5 IC/IB = 10 IB(off) = IC/2 VCC = 300 V PW = 20 s TJ = 125C t, TIME (ns) 4000 3500 3000 2500 2000 1500 1000 TJ = 25C 0 2 4 6 8 500 0 0 2 4 6 8 IC/IB = 5 IC/IB = 10 TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 300 V PW = 20 s



Figure 7. Resistive Switching, ton2500 2000 1500 1000 500 0 IC/IB = 5 4000 3500 t si , STORAGE TIME (ns) 3000 2500 2000 1500 1000 500 7 8 0 3

Figure 8. Resistive Switching, toff

IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H

TJ = 25C TJ = 125C IC = 3 A


t, TIME (ns)

TJ = 25C TJ = 125C 0 1

IC/IB = 10

IC = 1.3 A 4 5 hFE, FORCED GAIN 6 7

3 4 6 2 5 IC COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time, tsi(hFE)

250 tc 200 150 100 50 0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) tfi

250

200 t, TIME (ns)

tc tfi


t, TIME (ns)

150

100 TJ = 25C TJ = 125C 7 8 TJ = 25C TJ = 125C 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS)

50

Figure 11. Inductive Switching, tc and tfi IC/IB = 5 http://onsemi.com267

Figure 12. Inductive Switching, tc and tfi IC/IB = 10

BUL146 BUL146FTYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)130 TC , CROSS-OVER TIME (ns) 120 Tfi , FALL TIME (ns) 110 100 90 80 70 60 3 4 5 TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 3 A IC = 1.3 A 200 250 IC = 1.3 A

150 IC = 3 A TJ = 25C TJ = 125C 3 4 5 6 7 8

100

50

IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 9 10 11 12 13 14 15

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive CrossOver Time

GUARANTEED SAFE OPERATING AREA INFORMATION100 I C , COLLECTOR CURRENT (AMPS) 10 7 6 5 4 3 2 1 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 0V VBE(off) -5V -1, 5 V 800 I C , COLLECTOR CURRENT (AMPS) DC (BUL146) 5 ms 1 ms 10 s 1 s TC 125C IC/IB 4 LC = 500 H

1

EXTENDED SOA

0.1

0.01 10

600 400 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)


Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turnoff with the basetoemitter junction reversebiased. The safe level is specified as a reverse biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

1,0 POWER DERATING FACTOR 0,8 0,6 0,4 0,2 0,0 20 THERMAL DERATING SECOND BREAKDOWN DERATING

40

60

80

100

120

140

160

TC, CASE TEMPERATURE (C)

Figure 17. Forward Bias Power Derating


BUL146 BUL146F10 9 dyn 1 s dyn 3 s 8 7 6 5 90% IB 1 s IB 1 2 3 s 3 4 TIME 5 6 7 8 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 90% IC tfi

5 4 3 2 VOLTS 1 0 -1 -2 -3 -4 -5 0

VCE

10% IC

Figure 18. Dynamic Saturation Voltage Measurements+15 V 1 F 100 3W MTP8P10

Figure 19. Inductive Switching Measurements

150 3W

100 F VCE PEAK MTP8P10 RB1 Iout A VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA

IC PEAK

MPF930 +10 V MPF930

MUR105

50 COMMON 500 F 150 3W

MJE210 MTP12N10

RB2

1 F -Voff

INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

Table 1. Inductive Load Switching Drive Circuit

TYPICAL THERMAL RESPONSE1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 10 t1 P(pk)

0.1

RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)

100

1000

Figure 20. Typical Thermal Response (ZJC(t)) for BUL146 http://onsemi.com269

BUL146 BUL146FTYPICAL THERMAL RESPONSEr(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.00 D = 0.5

0.2 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.10 1.00

P(pk)

t2 DUTY CYCLE, D = t1/t2 10.00 t, TIME (ms)

t1

RJC(t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)

100.00

1000

Figure 21. Typical Thermal Response for BUL146F


BUL146 BUL146FTEST CONDITIONS FOR ISOLATION TESTS*CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS

0.107 MIN

0.107 MIN

HEATSINK 0.110 MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1

HEATSINK

HEATSINK

Figure 22b. Clip Mounting Position for Isolation Test Number 2

Figure 22c. Screw Mounting Position for Isolation Test Number 3

*Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**4-40 SCREW PLAIN WASHER CLIP

HEATSINK COMPRESSION WASHER NUT HEATSINK

Figure 23a. ScrewMounted

Figure 23b. ClipMounted

Figure 23. Typical Mounting Techniques for Isolated PackageLaboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.


ON Semiconductort

SWITCHMODENPN Bipolar Power Transistor For Switching Power Supply ApplicationsThe BUL147 have an applications specific stateoftheart die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These highvoltage/highspeed transistors offer the following:

BUL147POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

Improved Efficiency Due to Low Base Drive Requirements:High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for TurnOff (No Current Tail) Parametric Distributions are Tight and Consistent LottoLot Two Package Choices: Standard TO220 or Isolated TO220

MAXIMUM RATINGSRating CollectorEmitter Sustaining Voltage CollectorEmitter Breakdown Voltage EmitterBase Voltage Collector Current Continuous Peak(1) Base Current Continuous Peak(1) Total Device Dissipation Derate above 25C Operating and Storage Temperature (TC = 25C) Symbol VCEO VCES VEBO IC ICM IB IBM PD TJ, Tstg BUL147 400 700 9.0 8.0 16 4.0 8.0 125 1.0 65 to 150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C BUL147 CASE 221A09 TO220AB

THERMAL CHARACTERISTICS RatingThermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds

SymbolRJC RJA TL

BUL441.0 62.5 260

UnitC/W C


272

May, 2001 Rev. 4

Publication Order Number: BUL147/D

BUL147ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)Characteristic OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS BaseEmitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) BaseEmitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) CollectorEmitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) (TC = 125C) (IC = 4.5 Adc, IB = 0.9 Adc) (TC = 125C) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (TC = 125C) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) (TC = 125C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 25C to 125C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation VoltVolt age: Determined 1.0 s and 3.0 3 0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 0.9 Adc 09 VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) fT Cob Cib VCE(dsat) 14 100 1750 3.0 5.5 0.8 1.4 3.3 8.5 0.4 1.0 175 2500 Volts MHz pF pF hFE VBE(sat) VCE(sat) 14 8.0 7.0 10 10 0.25 0.3 0.35 0.35 30 12 11 18 20 0.5 0.5 0.7 0.8 34 0.82 0.92 1.1 1.25 Vdc Vdc VCEO(sus) ICEO ICES 400 100 100 500 100 100 Vdc Adc Adc Symbol Min Typ Max Unit

IEBO

Adc

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.


BUL147SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) TurnOn Time TurnOff Time (TC = 125C) TurnOn Time TurnOff Time (TC = 125C) SWITCHING CHARACTERISTICS: Inductive Load (Vcl

Bi-Polar Power Transistor Data Book

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