2020.10

LOW POWER SRAMsAdvanced technology with superior performance and industry-leading support

LOW POWER SRAMs

HIGH PERFORMANCE AND HIGH RELIABILITY USING

RENESAS’S ORIGINAL TECHNOLOGY

Contents

Low Power SRAM Roadmap .......................................................................................................03

Industry-Leading Support, Application of Renesas Low Power SRAM ......................................03

Advanced Low Power SRAM Technology with Superior Performance and Reliability ..............04

Product Differentiation ................................................................................................................04

Product Benchmark .....................................................................................................................04

Package Lineup for Low Power SRAM ........................................................................................05

Low Power SRAM Part Name Decoder .......................................................................................05

Product List ..................................................................................................................................06

02-03

Low Power SRAM Roadmap

Industry-Leading Support, Application of Renesas Low Power SRAM

SRAM type

Low PowerSRAM

256Kb 5V/3V, 1Mb 5V/3V,2Mb 3V, 4Mb 5V

4Mb 3V, 8Mb 3V,16Mb 3V, 32Mb 3V(16Mbx2)

16Mb 3V

32Mb 3V

64Mb 3V

Density, Voltage CY2019 2020 2021 2022 2123 2024

0.15μm Advanced LPSRAM

0.11μm Advanced LPSRAM

0.13μm (ECC embedded)

0.11μm Advanced LPSRAMMP Now

MP Now

0.15μm

MP New

0.15μm 0.11μm Advanced LPSRAM

■ Car accessories (4%)• ETC• Data logger, etc.

■ Office Automation (6%)• MFP, Server, etc.

■ Telecom (8%)• Router, Switch• Base station, etc.

■ Social Infra. (6%)• Elevator• Railway system, etc.

■ Medical/Healthcare (2%)

■ Consumer (5%)• Amusement• Musical instrument• Calculator, etc.

■ Industrial (69%)• FA (PLC/CNC)• POS• ATM/Vending machine• Security machine• Measuring instrument, etc.

Source: Renesas Electronics, 2019

■Widest product lineup from 256Kbit to 64Mbit ■Long term and stable support ■Highest quality with Renesas core advanced technology ■Easy switch to higher density in the same package

Renesas supports soft error free products for entire lineup of 256Kbit to 64Mbit

Only Renesas supports unique products that realize both lowest standby current and soft error free

Advanced Low Power SRAM Technology with Superior Performance and Reliability

Product Differentiation

Product Benchmark

Vendor Process 256Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb

Renesas

0.13μm CMOS ECC embedded

0.15μm Advanced (5V) Change to 0.11μm Advanced

0.11μm Advanced (3V)

Competitor90nm CMOS no ECC

65nm CMOS ECC embedded

Production Soft error countermeasure: Yes No

■Low standby current ■High reliability

–Soft error free –Latch-up free

vs. Renesas 0.11μm Advanced LPSRAM

Competitor’s 65nm LPSRAM (with ECC)

Standby current 0.3μA (4Mb, typ.) 3μA (4Mb, typ.)

vs. Renesas 0.11μm Advanced LPSRAM

Competitor’s 90nm LPSRAM (no ECC)

Soft error rate < 0.04 FIT / Mbit 500 to 1,000 FIT / Mbit

Renesas’ Advanced LPSRAM Technology: 3D Image of Memory Cell

Infrastructure:NMOS formed in Si substrate

1st stacked structure:p-type TFT(thin film transistor)

2nd stacked structure:Separate physical capacitor(not parasitic capacitance)

Latch-up free:No parasitic PNPN-structurein the substrate

Soft error free:Stores larger amount of charge

Low standby current:Optimized leakage currentof transistors

04-05

Package Lineup for Low Power SRAM

Low Power SRAM Part Name Decoder

28-pin

SOP TSOP-I TSOP-II

32-pin

44-pin

48-pin(48-ball)

52-pin

FBGAsTSOP μTSOP

x8 / x16 config.

x8 config.

8/16/3264 Mb

0.5

20.0

12.0

1.27

256 Kb

17.5

11.9

3

1/4 Mb

1.2720.75

14.1

4/8/16/3264 Mb

(0.11μm)

16 Mb(0.13μm)

7.5 8.0

8.5

9.5

0.55

256 Kb

13.4

8.0

1/2/4Mb

13.4

8.0

0.5

1 Mb

0.5

20.0

8.0

2/4/8 Mb

0.818.41

11.7

6

8/16/3264 Mb

0.410.79

10.4

9

4 Mb

1.27

11.7

6

20.95

■Renesas provides 6 kinds of common packages, which are upward compatible, making it easy to expand density without changing the PCB.

R1 L V 5256 E SA 5 S I #B1R1 L P 04 08 D SP -

-5 S I #B0

RM 1#AS 2- 4L V 04 16 E G SB ARenesas Memory

Packing Environmental

#B0 / #B1 Tray or Tube Pb free

#S0 / #S1 Embossed Tape Pb free

Bus Width

Packing, Environmental

Assembly Site Rev., etc.

Environment

Operating Temperature

0 Rev. Code

1 Rev. CodeA Pb free (pure-Tin plating)

C Pb free (non pure-Tin plating)L LPSRAM, Single chip

W LPSRAM, Two chips

Access Time

Package Type 5 55 ns

4 45 ns

Standby Current / Data Retention CurrentL Standard

S Low power version

V 3V

P 5V

Chip Configuration

Industrial Grade

Packing

Operating Voltage

Memory Density

A Tray

C Tube

H Embossed Tape (TSOP, µTSOP, SOP)

K Embossed Tape (FBGA, sTSOP)

Chip GenerationSA TSOP-I (256Kb/8Mb/16Mb/32Mb/64Mb)

sTSOP (1Mb/2Mb/4Mb)

SB TSOP-II

SD µTSOP

SF TSOP-I (1Mb)

SP SOP (256Kb, 4Mb)

SN SOP (1Mb)

BG FBGA

R 0 to 70˚C

I -40 to 85˚C

2 -40 to 85˚C

5256 256Kb (x8)

01 1Mb

02 2Mb

04 4Mb

08 8Mb

16 16Mb

32 32Mb

64 64Mb

08 x8

16 x16

Product ListProcess Density Configuration Part Name Package Access Time Voltage Temperature

0.15μm Advanced

256Kbit 32K x 8

R1LP5256ESP SOP (28) 55ns 4.5V to 5.5V -40 to 85°C

R1LP5256ESA TSOP-I (28) 55ns 4.5V to 5.5V -40 to 85°C

R1LV5256ESP SOP (28) 55ns 2.7V to 3.6V -40 to 85°C

R1LV5256ESA TSOP-I (28) 55ns 2.7V to 3.6V -40 to 85°C

0.15μm Advanced

1Mbit 128K x 8

R1LP0108ESN SOP (32) 55ns 4.5V to 5.5V -40 to 85°C

R1LP0108ESF TSOP-I (32) 55ns 4.5V to 5.5V -40 to 85°C

R1LP0108ESA sTSOP (32) 55ns 4.5V to 5.5V -40 to 85°C

R1LV0108ESN SOP (32) 55ns 2.7V to 3.6V -40 to 85°C

R1LV0108ESF TSOP-I (32) 55ns 2.7V to 3.6V -40 to 85°C

R1LV0108ESA sTSOP (32) 55ns 2.7V to 3.6V -40 to 85°C

0.15μm Advanced

2Mbit256K x 8 R1LV0208BSA sTSOP (32) 55ns 2.7V to 3.6V -40 to 85°C

128K x 16 R1LV0216BSB TSOP-II (44) 55ns 2.7V to 3.6V -40 to 85°C

0.15μm Advanced

4Mbit 512K x 8R1LP0408DSP SOP (32) 55ns 4.5V to 5.5V -40 to 85°C

R1LP0408DSB TSOP-II (32) 55ns 4.5V to 5.5V -40 to 85°C

0.11μm Advanced

4Mbit

512K x 8

RMLV0408EGSP SOP (32) 45ns 2.7V to 3.6V -40 to 85°C

RMLV0408EGSB TSOP-II (32) 45ns 2.7V to 3.6V -40 to 85°C

RMLV0408EGSA sTSOP (32) 45ns 2.7V to 3.6V -40 to 85°C

256K x 16

RMLV0414EGSB TSOP-II (44) 45ns 2.7V to 3.6V -40 to 85°C

RMLV0416EGSB TSOP-II (44) 45ns 2.7V to 3.6V -40 to 85°C

RMLV0416EGBG FBGA (48) 45ns 2.7V to 3.6V -40 to 85°C

0.11μm Advanced

8Mbit

1M x 8 RMLV0808BGSB TSOP-II (44)45ns 2.7V to 3.6V -40 to 85°C

55ns 2.4V to 3.6V -40 to 85°C

512K x 16

RMLV0816BGSB TSOP-II (44)45ns 2.7V to 3.6V -40 to 85°C

55ns 2.4V to 3.6V -40 to 85°C

RMLV0816BGBG FBGA (48)45ns 2.7V to 3.6V -40 to 85°C

55ns 2.4V to 3.6V -40 to 85°C

512K x 16 / 1M x 8

RMLV0816BGSA TSOP-I (48)45ns 2.7V to 3.6V -40 to 85°C

55ns 2.4V to 3.6V -40 to 85°C

RMLV0816BGSD μTSOP (52)45ns 2.7V to 3.6V -40 to 85°C

55ns 2.4V to 3.6V -40 to 85°C

0.13μm CMOS

16Mbit (with ECC)

1M x 16 / 2M x 8 R1LV1616HSA TSOP-I (48) 45ns 2.7V to 3.6V -40 to 85°C

1M x 16 R1LV1616HBG FBGA (48) 45ns 2.7V to 3.6V -40 to 85°C

0.11μm Advanced

16Mbit1M x 16 / 2M x 8

RMLV1616AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C

RMLV1616AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C

1M x 16 RMLV1616AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C

0.11μm Advanced

32Mbit2M x 16 / 4M x 8

RMLV3216AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C

RMLV3216AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C

2M x 16 RMLV3216AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C

0.11μm Advanced

32Mbit 2M x 16 RMWV3216AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C

0.11μm Advanced

64Mbit4M x 16 / 8M x 8

RMWV6416AGSA TSOP-I (48) 55ns 2.7V to 3.6V -40 to 85°C

RMWV6416AGSD μTSOP (52) 55ns 2.7V to 3.6V -40 to 85°C

4M x 16 RMWV6416AGBG FBGA (48) 55ns 2.7V to 3.6V -40 to 85°C

06-07

MEMO

www.renesas.com

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(Rev.4.0-1 November 2017)

© 2020 Renesas Electronics Corporation.All rights reserved.

Document No. R10CP0007EJ0200