Lecture #4 – VLSI Design Review
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Transcript of Lecture #4 – VLSI Design Review
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Lecture #4 1
Lecture #4 – VLSI DesignReview MOS Transistor Basics
Pinchoff Threshold Voltage VT
Current Equation Linear Saturation
Channel Length Modulation
2
DSDSTGS'nD V
2
1VVV
L
WkI
2TGS
'nD VV
2L
WkI
TGSDS VVV
DSTGS'nD VVV
L
WkI
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Lecture #4 2
At ‘a’
2
DSDSTGS'nD V
2
1VVV
L
WkI
DSDSTGS'nD VV
2
1VV
L
WkI
At ‘b’
DSTGS'n
ONV
21
VVLW
k
1R
TGS'n
ONVV
LW
k
1R
1.5V
a
b
•• •c
At ‘c’ 2TGS
'n
D VVL
W
2
kI
2TGS'n
DSON
VVLW
k
V2R
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Lecture #4 3
For NMOS
For PMOS
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Lecture #4 4
Ron
|VGS| < |VT||VGS| > |VT|
|VGS|
Switch Model of CMOS Transistor
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Lecture #4 5
VDD
VIN VOUT
VoutVin
Vin
Vout
VOH
VOL
VOHVOL
Vth
Vin = Vout
Switching Threshold
Nominal Voltage LevelsVth = ?
Inverter DC Operation Voltage Transfer
Characteristic
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Lecture #4 6
Delay Definitions
tpHL tpLH
t
t
Vin
Vout
50%
50%
tr
10%
90%
tf
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Lecture #4 7
CMOS Inverter Steady State Response
VDD
VOUT
VIN = VDD VIN = 0
RON
VOH = VDD
VOL= 0
Vth = Ronp) f(Ronn,
VDD
RON
VOUT
Threshold Voltage
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Lecture #4 8
CMOS Circuit FabricationProcess Steps for Patterning through
Photolithography
Optically project the shadow of a pattern on to the chip
and transfer the pattern to the chip
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Lecture #4 9
NMOS Transistor
Polysilicon Gate
Field Oxide
(Thick Oxide)
Gate Oxide
(Thin Oxide)
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Lecture #4 10
Patterning Silicon
Si - Substarate
Silicon Di-oxide
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Lecture #4 11
Lithography
Process used to transfer patterns to each layer of IC.Lithography sequence steps:Designer: - Drawing the layer patterns on a layout editorSilicon Foundry: - Mask generation from the layer patterns in the design data base - Printing: transfer the mask pattern to the wafer surface - Process the wafer to physically pattern each layer
of the IC
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Lecture #4 12
Process Steps
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Lecture #4 13
Process steps for Patterning
Light Sensitive organic polymer
Grow Crystal Saw
Silicon Wafer
Silicon Wafer
Oxide Layer SiO2 1m
Silicon Wafer
Oxide Layer
Photoresist
Bare silicon Wafer
Grow Oxide Layer
Spin coating with Photoresist –1mm
Thermal Oxidation
Acid-resistant
Soluble once exposed to UV
Light
4-12” dia <1mm
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Lecture #4 14
Pattern formed on a glass plate (Mask) Transparent & Opaque
regionsPositive Photoresist Non exposed regions hardened
higher resolution
(hardened)Silicon Wafer
Oxide LayerExposed soluble
Expose to Ultraviolet Light
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Lecture #4 15
Etching continued to remove SiO2
Pattern formed
Silicon Wafer
Oxide Layer
Silicon Wafer
Silicon Wafer
Soluble photoresist is chemically removed (etching) using HF acid
High-temp. plasma
removes hardened
photoresist
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Lecture #4 16
Patterned Silicon
Si - Substarate