Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers...

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Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High Power Diode Laser

Transcript of Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers...

Page 1: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

Laser Munich 2007 19 June 2007

Advancements in Reliable, High Power, Single-Emitter Diode Lasers

Franck Leibreich

Marketing Manager of Industrial High Power Diode Laser

Page 2: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 2

Outline

1. Introduction

2. Operations Highlights

3. High Power Fiber Laser Pumps:1. L3 Products

2. Multi-Cell Life Test

3. L4 Development

4. SHEDS Bar Results

Page 3: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 3

Outline

1. IntroductionIntroduction

2. Operations Highlights

3. High Power Fiber Laser Pumps:High Power Fiber Laser Pumps:

1. L3 ProductsL3 Products

2. Multi-Cell Life Test Multi-Cell Life Test

3. L4 DevelopmentL4 Development

4. SHEDS Bar ResultsSHEDS Bar Results

Page 4: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 4

High Power Lasers Operations Highlights

Diode laser fab in San Jose (former SDL)

Test and Assembly at JDSU Shenzhen

JDSU Shenzhen

Opened January 200132,000 m2 working space15,000 m2 clean room>2600 employees

Page 5: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 5

Outline

1. IntroductionIntroduction

2. Operations HighlightsOperations Highlights

3. High Power Fiber Laser Pumps:

1. L3 Products

2. Multi-Cell Life Test

3. L4 Development

4. 808nm Chip and Multi Cell Life Test 808nm Chip and Multi Cell Life Test

5. SHEDS Bar ResultsSHEDS Bar Results

Page 6: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 6

Packaging Diodes to Fit Application Needs

Standardized Carriers– Bare Chip on Sub-mounts (CoS)– Open heat sinks– Encapsulated devices– Integrated with MPD &/or TEC

Fiber-coupled Modules– Telecom grade 14-pin BTF– Industrial “L” series

Page 7: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 7

New: 54XX Series “J” Package

Features 810, 830 & 852nm (others available) Up to 100mW linear kink-free 5.9mm diameter TO-56 canister Diffraction-limited (M2<1.1) 9° x 30° FWHM beam Highly robust solder technology (AuSn)

ApplicationsIR illumination & /or designation, Sensing, measurement & control, thermal printing & imaging, point-to-point, high data rate communication

Page 8: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 8

976nm Single Mode Fiber Laser Pumps

Product Suite 2700 Series (up to 300mW) 2900 Series (up to 500mW) 3000 Series (NEW! Up to 660mW)

FeaturesTelcordia QualifiedSpatial Single ModeWavelength Stabilized with FBGPolarization Maintained Fiber Option

(Standard on 3000 Series)

Application Fiber Laser Pumping

Page 9: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 9

Features:• 8.5W operating power at 25°C• 105µm/0.22 NA pigtail• >200,000hrs MTBF• Robust to power cycling (0.5 Hz)• Telcordia-class diode and package

8.5W 6397-L3 9XXnm Current Generation

Page 10: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 10

6397-L3 9XXnm L-I Curve vs Temperature

0

2

4

6

8

10

12

14

16

0 5 10 15

Current, A

Po

we

r, W

25C

35C

45C

55C

70C

90C

Typical L-I characteristics of a JDSU-6397 laser diodes at different temperatures

Page 11: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 11

Maximum Power From 6397 Chip at 9xx nm

6397 achieves >20.0W maximum CW power

Reliable power is limited by waste heat

T=15C

0

5

10

15

20

25

30

35

0 5 10 15 20 25 30

Current, A

Po

wer

, W

pulsed

CW

Page 12: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 12

Current 6397-L3 Brightness

6397-L3 105μm 0.22 NA

pigtail core is under-filled

Well above 90% of power is within 0.15 NA

JDSU is committing R&D to delivering the brightest fiber-coupled single-emitter lasers

915 L3 SZ build, SJ tested data

All Units Iop 0.22 0.2 0.16 0.14average 6307 6345 6586 6883sigma 173 219 237 284min 6986 7171 7443 7830average-3sigma 6825 7003 7297 7735

All Units CE 0.22 0.2 0.16 0.14average 85.5% 84.9% 81.4% 77.3%sigma 2.7% 3.3% 3.3% 3.6%min 75.0% 74.0% 70.0% 66.0%average-3sigma 77.3% 75.1% 71.5% 66.7%

Percent power in NA 0.22 0.2 0.16 0.14All Units average 100% 99.4% 95.5% 91.2%

sigma 0% 2.3% 1.9% 3.0%min 100% 90.2% 88.8% 83.2%average-3sigma 100% 92.4% 89.8% 82.1%

Only AFL average 100% 98.9% 94.7% 89.9%sigma 0% 2.3% 2.2% 3.3%min 100% 93.0% 89.1% 83.2%average-3sigma 100% 92.0% 88.2% 80.0%average 100% 99.4% 95.7% 91.6%sigma 0% 2.2% 1.6% 2.9%min 100% 90.2% 91.5% 83.9%average-3sigma 100% 92.8% 90.9% 83.0%

Page 13: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 13

L3 platform shipping since Sept. 2003– JDSU has 13 year track record supplying high power, multimode

9xx nm pump diode lasers: >100,000 shipped

4800-L3 Series qualifies for Telcordia – March ‘05– L3 package satisfies rigorous telecom reliability standard

Over 30,000 639x-L3 diode lasers shipped– Assembled in JDSU Shenzhen since Feb 2004– Over 30 million deployment hours – 3500–4000 dppm out-of-the box and assembly failure return rate

• dppm for all returns, including “no problem found”

Best-in-class Reliability and Quality

Page 14: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 14

Which data would you prefer to see your supplier present?

0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000

Time, hrsElapsed time (hrs) Elapsed time (hrs)

JDSU is proud to offer both devices to the market…– …but all recently released and future products are tested to failure

Weaknesses of “rose-colored glasses reliability”– No data on robustness (what happens at 1.2x Pop? What happens in

Year Two of deployment?) – How does reliability scale with temperature, power, current (i.e. real

use conditions)?

100um stripe, 808nm20 units, 7500 hoursTested to nominal deployment conditions

100um stripe, 915/940nm20 units, 5000 hoursTested to nearly 2x Iop, 145°C junction temperature

?

Page 15: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 15

6390 Diode Laser Multi-cell Test Results

Cell # fixture temp., 0C

junction

temp., 0C Power, W Current, Anumber of

lasers hours device hours Failures

1 92 129 5.2 7 75 5000 3.6E+05 5

2 55 107 8.4 10 40 5000 1.7E+05 8

3 70 126 7.8 10 19 5000 8.9E+04 2

4 85 145 7.0 10 20 5010 9.2E+04 2

5 55 125 9.5 12 20 5000 5.5E+04 13

6 70 145 8.5 12 19 5000 5.4E+04 11

total 193 8.3E+05 41

Cells 1/3/5 and 4/6 vary I at constant Tj Failure rates increase with current/power

Cells 2/3/4 and 5/6 vary Tj at constant IFailure rates correlate with power, not temperature

Page 16: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 16

Multi-cell testing yields a “user’s manual”

1.0E+04

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

0 2 4 6 8 10

Power, W

me

dia

n li

fe t

ime

, hrs

6390 Median time-to-failures for different operating conditions

Heatsink temperature,

0C Power,

WMedian

time, hrs

Median time with 60% C.L.,

hrs

Cumulative failures in 1 year

Cumulative failures in 5 years

Cumulative failures in 10 years

Cumulative failures in 25 years

2.6 6.0E+08 3.0E+08 0.0% 0.0% 0.0% 0.0%5.2 9.1E+06 5.4E+06 0.0% 0.2% 0.7% 2.3%6.5 2.1E+06 1.3E+06 0.2% 1.9% 4.4% 11.2%8 5.3E+05 3.5E+05 1.4% 9.2% 16.8% 31.8%

2.6 3.2E+08 1.7E+08 0.0% 0.0% 0.0% 0.0%5.2 4.8E+06 3.0E+06 0.0% 0.6% 1.6% 5.0%6.5 1.1E+06 7.4E+05 0.5% 4.2% 8.7% 19.3%8 2.8E+05 1.9E+05 3.3% 16.2% 26.9% 45.0%

2.6 1.8E+08 9.8E+07 0.0% 0.0% 0.0% 0.0%5.2 2.6E+06 1.8E+06 0.1% 1.4% 3.5% 9.2%6.5 6.1E+05 4.3E+05 1.2% 8.0% 15.1% 29.3%8 1.5E+05 1.1E+05 6.5% 25.5% 38.7% 58.0%

25

35

45

1.0E+04

1.0E+05

1.0E+06

1.0E+07

1.0E+08

1.0E+09

0 2 4 6 8 10

25C

35C

45C

Page 17: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 17

6397 Multi-cell Life Test

6397, 9xxnm 10W chip (100um aperture) 95 lasers from 11 wafers, 7 growth runs Diodes are distributed among 5 cells with different very accelerated

conditions Major acceleration factors – junction temperature Tj and optical power

Cell # Ths, C Current, A Power, W Tj, C Diode # time, hrs device hours fails1 55 12 10.4 102 19 6360 92690 12 70 12 9.8 119 21 6359 123114 13 90 12 8.6 143 18 6360 103363 24 55 14 11.5 115 18 6360 103166 45 70 14 10.5 133 19 6356 96720 2

total 95 6359 519053 10

Page 18: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 18

Failure rate model for 6397 chip at 9xx nm

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

0 2 4 6 8 10 12

Power, W

MT

BF

, h

rs

25C

35C

45C

MTBF vs. output power for different heat sink temperatures

6397 MTBF and cumulative failures for different operation conditions

heatsink temperature, C power, W

random MTBF, hrs

Cumulative failures in 1 year

Cumulative failures in 3 years

Cumulative failures in 5 years

Cumulative failures in 10 years

25 10 551298 1.6% 4.7% 7.6% 14.7%35 10 354582 2.4% 7.1% 11.6% 21.9%45 10 228490 3.8% 10.9% 17.6% 33.2%

Page 19: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 19

L4…the Future 2008

L4 Series, the Highest Power Available with One Single Emitter Design!!!

Page 20: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 20

Features:• 10W operating power at 25°C• 105µm/0.22 NA pigtail• 200,000hrs MTBF• 915/940/975nm wavelengths• Isolated Anode and Cathode• RoHS Compliant• Cost Effective Package, less $$$ per Watt!!!• Fully Release to Production in January 2008

Applications:Fiber and Solid laser pumping, Direct diode material processing, Medical (dental, dermatology, surgery)

10 W 6398-L4 Development Program

Page 21: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 21

L4 alpha Sample L-I Curve at 25°C

0

2

4

6

8

10

12

14

0 2 4 6 8 10 12 14 16

Current (A)

Ex-

Fib

er P

ow

er (

W)

COS

L4 0.2NA

L4 0.16NA

CE = 90%I @ 8W (.2NA) = 9.5AI @ 10W (.2NA) = 12.4A

90% coupling efficiency Very good performance into NA=0.16

Page 22: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 22

Outline

1. IntroductionIntroduction

2. Operations/R&D HighlightsOperations/R&D Highlights

3. High Power Fiber Laser Pumps:High Power Fiber Laser Pumps:

1. L3 ProductsL3 Products

2. Multi-Cell Life Test Multi-Cell Life Test

3. L4 DevelopmentL4 Development

4. SHEDS Bar Results

Page 23: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 23

Optimizing single-emitter efficiency

Research funded by DARPA SHEDS program promises power conversion efficiency improvements in future fiber laser pumps

Device Efficiency of Similar Structures at 25C, 940nmDashed = Commecially Available Solid Red = SHEDS Design

0

2

4

6

8

10

0 2 4 6 8 10

Drive Current (A)

Ou

tpu

t P

ow

er

(W)

30%

40%

50%

60%

70%

80%P

ow

er C

on

v. E

ff.

Page 24: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 24

SHEDS 940 nm Bars

>75% Bar Efficiency at 80W and above >69% Stack Efficiency (NIST) to 500W and beyond

Performance of JDSU/SHEDS 80W Bars

0

25

50

75

100

125

150

0 20 40 60 80 100 120

Drive Current (A)

Ou

tpu

t P

ow

er (

W)

50%

55%

60%

65%

70%

75%

80%

Po

wer C

on

version

Efficien

cy

500W Lensed Water Cooled Bar : NIST Calibrated

0

100

200

300

400

500

0 20 40 60 80 100

Current (A)

Po

we

r (W

)

50%

55%

60%

65%

70%

75%

PC

E

20°C 30°C

20°C 30°C

Cooling Water Temp.

Page 25: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 25

High Power 300W Bar Preliminary SpecificationPerformance Specifications

Laser Characteristics Symbol Min. Typ. Max. Unit

CW Output Power Po – – 300 W

Polarization Ratio (TE)* 95 98 – %

Center wavelength lc p/n AAAA : 907.5+/- 7.5

Part Number : Range p/n BBBB : 937.5 +/- 7.5 nm

p/n CCCC : 976 +/- 10

Bar Configuration

Total Length LTOT 9.8 10.0 10.2 mm

Cavity Length Lc - 3700 - µm

Emitter Width We – 100 – µm

Number of Emitters Ne – 49 –

Threshold current Ith – 25 32 A

Operating current Iop – 330 360 A

Operating voltage per bar Vop – 1.4 1.5 V

Conversion efficiency Po/(IopVop) 60 65 – %

FWHM beam divergence per emitter

Parallel to junction FWHM q// – 7.0 9.0 degrees

Parallel to junction 90% Power q//90% – 8.0 10.0 degrees

Perpendicular to junction FWHM q⊥ – 30 36 degrees

Spectral width Dl – 4 – nm

Cooling Water Temp. Tc – 20 – °C

Maximum Junction Temperature* Tjmax – 60 75 °C

Reliability (at Po, 25°C)

Mean time to failure MTTF TBD – – Hr

Typical value at 20°C and 0.6 NA collection optics

*Dependent on bar mounting technology

Page 26: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 26

PCE Curve

Page 27: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 27

Slow Axis Divergence – Single Emitter Data

FWHM 6.5 to 8.090% Power 7.0 to 9.095% Power 8.5 to 10.5

Three Samples SHEDS Individual Emitter3000um x 100um Aperture at 6.5W

0.0

0.5

1.0

-12 -8 -4 0 4 8 12

Parallel Angle

Far

Fie

ld

Page 28: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 28

What’s next at JDSU?

Scaling the power on the Single Emitters Focus on the fiber laser pumps Focus on cost effective solution $/W!! Focus on higher brightness $/W/Sterradian!! Product with high level of integration leveraging the

telecom experience like the new FCD 488 laser

Page 29: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 29

JDSU FCD-488 Blue Laser

Laser diode FBG PP crystal beam shaping/light loop

TelecomEDFA

Page 30: Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers Franck Leibreich Marketing Manager of Industrial High.

© 2007 JDSU. All rights reserved. 30

Thanks to:Erik Zucker, Victor Rossin, Thomas Kraft and many other JDSU colleagues