Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers...
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Transcript of Laser Munich 2007 19 June 2007 Advancements in Reliable, High Power, Single-Emitter Diode Lasers...
Laser Munich 2007 19 June 2007
Advancements in Reliable, High Power, Single-Emitter Diode Lasers
Franck Leibreich
Marketing Manager of Industrial High Power Diode Laser
© 2007 JDSU. All rights reserved. 2
Outline
1. Introduction
2. Operations Highlights
3. High Power Fiber Laser Pumps:1. L3 Products
2. Multi-Cell Life Test
3. L4 Development
4. SHEDS Bar Results
© 2007 JDSU. All rights reserved. 3
Outline
1. IntroductionIntroduction
2. Operations Highlights
3. High Power Fiber Laser Pumps:High Power Fiber Laser Pumps:
1. L3 ProductsL3 Products
2. Multi-Cell Life Test Multi-Cell Life Test
3. L4 DevelopmentL4 Development
4. SHEDS Bar ResultsSHEDS Bar Results
© 2007 JDSU. All rights reserved. 4
High Power Lasers Operations Highlights
Diode laser fab in San Jose (former SDL)
Test and Assembly at JDSU Shenzhen
JDSU Shenzhen
Opened January 200132,000 m2 working space15,000 m2 clean room>2600 employees
© 2007 JDSU. All rights reserved. 5
Outline
1. IntroductionIntroduction
2. Operations HighlightsOperations Highlights
3. High Power Fiber Laser Pumps:
1. L3 Products
2. Multi-Cell Life Test
3. L4 Development
4. 808nm Chip and Multi Cell Life Test 808nm Chip and Multi Cell Life Test
5. SHEDS Bar ResultsSHEDS Bar Results
© 2007 JDSU. All rights reserved. 6
Packaging Diodes to Fit Application Needs
Standardized Carriers– Bare Chip on Sub-mounts (CoS)– Open heat sinks– Encapsulated devices– Integrated with MPD &/or TEC
Fiber-coupled Modules– Telecom grade 14-pin BTF– Industrial “L” series
© 2007 JDSU. All rights reserved. 7
New: 54XX Series “J” Package
Features 810, 830 & 852nm (others available) Up to 100mW linear kink-free 5.9mm diameter TO-56 canister Diffraction-limited (M2<1.1) 9° x 30° FWHM beam Highly robust solder technology (AuSn)
ApplicationsIR illumination & /or designation, Sensing, measurement & control, thermal printing & imaging, point-to-point, high data rate communication
© 2007 JDSU. All rights reserved. 8
976nm Single Mode Fiber Laser Pumps
Product Suite 2700 Series (up to 300mW) 2900 Series (up to 500mW) 3000 Series (NEW! Up to 660mW)
FeaturesTelcordia QualifiedSpatial Single ModeWavelength Stabilized with FBGPolarization Maintained Fiber Option
(Standard on 3000 Series)
Application Fiber Laser Pumping
© 2007 JDSU. All rights reserved. 9
Features:• 8.5W operating power at 25°C• 105µm/0.22 NA pigtail• >200,000hrs MTBF• Robust to power cycling (0.5 Hz)• Telcordia-class diode and package
8.5W 6397-L3 9XXnm Current Generation
© 2007 JDSU. All rights reserved. 10
6397-L3 9XXnm L-I Curve vs Temperature
0
2
4
6
8
10
12
14
16
0 5 10 15
Current, A
Po
we
r, W
25C
35C
45C
55C
70C
90C
Typical L-I characteristics of a JDSU-6397 laser diodes at different temperatures
© 2007 JDSU. All rights reserved. 11
Maximum Power From 6397 Chip at 9xx nm
6397 achieves >20.0W maximum CW power
Reliable power is limited by waste heat
T=15C
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
Current, A
Po
wer
, W
pulsed
CW
© 2007 JDSU. All rights reserved. 12
Current 6397-L3 Brightness
6397-L3 105μm 0.22 NA
pigtail core is under-filled
Well above 90% of power is within 0.15 NA
JDSU is committing R&D to delivering the brightest fiber-coupled single-emitter lasers
915 L3 SZ build, SJ tested data
All Units Iop 0.22 0.2 0.16 0.14average 6307 6345 6586 6883sigma 173 219 237 284min 6986 7171 7443 7830average-3sigma 6825 7003 7297 7735
All Units CE 0.22 0.2 0.16 0.14average 85.5% 84.9% 81.4% 77.3%sigma 2.7% 3.3% 3.3% 3.6%min 75.0% 74.0% 70.0% 66.0%average-3sigma 77.3% 75.1% 71.5% 66.7%
Percent power in NA 0.22 0.2 0.16 0.14All Units average 100% 99.4% 95.5% 91.2%
sigma 0% 2.3% 1.9% 3.0%min 100% 90.2% 88.8% 83.2%average-3sigma 100% 92.4% 89.8% 82.1%
Only AFL average 100% 98.9% 94.7% 89.9%sigma 0% 2.3% 2.2% 3.3%min 100% 93.0% 89.1% 83.2%average-3sigma 100% 92.0% 88.2% 80.0%average 100% 99.4% 95.7% 91.6%sigma 0% 2.2% 1.6% 2.9%min 100% 90.2% 91.5% 83.9%average-3sigma 100% 92.8% 90.9% 83.0%
© 2007 JDSU. All rights reserved. 13
L3 platform shipping since Sept. 2003– JDSU has 13 year track record supplying high power, multimode
9xx nm pump diode lasers: >100,000 shipped
4800-L3 Series qualifies for Telcordia – March ‘05– L3 package satisfies rigorous telecom reliability standard
Over 30,000 639x-L3 diode lasers shipped– Assembled in JDSU Shenzhen since Feb 2004– Over 30 million deployment hours – 3500–4000 dppm out-of-the box and assembly failure return rate
• dppm for all returns, including “no problem found”
Best-in-class Reliability and Quality
© 2007 JDSU. All rights reserved. 14
Which data would you prefer to see your supplier present?
0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
Time, hrsElapsed time (hrs) Elapsed time (hrs)
JDSU is proud to offer both devices to the market…– …but all recently released and future products are tested to failure
Weaknesses of “rose-colored glasses reliability”– No data on robustness (what happens at 1.2x Pop? What happens in
Year Two of deployment?) – How does reliability scale with temperature, power, current (i.e. real
use conditions)?
100um stripe, 808nm20 units, 7500 hoursTested to nominal deployment conditions
100um stripe, 915/940nm20 units, 5000 hoursTested to nearly 2x Iop, 145°C junction temperature
?
© 2007 JDSU. All rights reserved. 15
6390 Diode Laser Multi-cell Test Results
Cell # fixture temp., 0C
junction
temp., 0C Power, W Current, Anumber of
lasers hours device hours Failures
1 92 129 5.2 7 75 5000 3.6E+05 5
2 55 107 8.4 10 40 5000 1.7E+05 8
3 70 126 7.8 10 19 5000 8.9E+04 2
4 85 145 7.0 10 20 5010 9.2E+04 2
5 55 125 9.5 12 20 5000 5.5E+04 13
6 70 145 8.5 12 19 5000 5.4E+04 11
total 193 8.3E+05 41
Cells 1/3/5 and 4/6 vary I at constant Tj Failure rates increase with current/power
Cells 2/3/4 and 5/6 vary Tj at constant IFailure rates correlate with power, not temperature
© 2007 JDSU. All rights reserved. 16
Multi-cell testing yields a “user’s manual”
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
0 2 4 6 8 10
Power, W
me
dia
n li
fe t
ime
, hrs
6390 Median time-to-failures for different operating conditions
Heatsink temperature,
0C Power,
WMedian
time, hrs
Median time with 60% C.L.,
hrs
Cumulative failures in 1 year
Cumulative failures in 5 years
Cumulative failures in 10 years
Cumulative failures in 25 years
2.6 6.0E+08 3.0E+08 0.0% 0.0% 0.0% 0.0%5.2 9.1E+06 5.4E+06 0.0% 0.2% 0.7% 2.3%6.5 2.1E+06 1.3E+06 0.2% 1.9% 4.4% 11.2%8 5.3E+05 3.5E+05 1.4% 9.2% 16.8% 31.8%
2.6 3.2E+08 1.7E+08 0.0% 0.0% 0.0% 0.0%5.2 4.8E+06 3.0E+06 0.0% 0.6% 1.6% 5.0%6.5 1.1E+06 7.4E+05 0.5% 4.2% 8.7% 19.3%8 2.8E+05 1.9E+05 3.3% 16.2% 26.9% 45.0%
2.6 1.8E+08 9.8E+07 0.0% 0.0% 0.0% 0.0%5.2 2.6E+06 1.8E+06 0.1% 1.4% 3.5% 9.2%6.5 6.1E+05 4.3E+05 1.2% 8.0% 15.1% 29.3%8 1.5E+05 1.1E+05 6.5% 25.5% 38.7% 58.0%
25
35
45
1.0E+04
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
0 2 4 6 8 10
25C
35C
45C
© 2007 JDSU. All rights reserved. 17
6397 Multi-cell Life Test
6397, 9xxnm 10W chip (100um aperture) 95 lasers from 11 wafers, 7 growth runs Diodes are distributed among 5 cells with different very accelerated
conditions Major acceleration factors – junction temperature Tj and optical power
Cell # Ths, C Current, A Power, W Tj, C Diode # time, hrs device hours fails1 55 12 10.4 102 19 6360 92690 12 70 12 9.8 119 21 6359 123114 13 90 12 8.6 143 18 6360 103363 24 55 14 11.5 115 18 6360 103166 45 70 14 10.5 133 19 6356 96720 2
total 95 6359 519053 10
© 2007 JDSU. All rights reserved. 18
Failure rate model for 6397 chip at 9xx nm
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
0 2 4 6 8 10 12
Power, W
MT
BF
, h
rs
25C
35C
45C
MTBF vs. output power for different heat sink temperatures
6397 MTBF and cumulative failures for different operation conditions
heatsink temperature, C power, W
random MTBF, hrs
Cumulative failures in 1 year
Cumulative failures in 3 years
Cumulative failures in 5 years
Cumulative failures in 10 years
25 10 551298 1.6% 4.7% 7.6% 14.7%35 10 354582 2.4% 7.1% 11.6% 21.9%45 10 228490 3.8% 10.9% 17.6% 33.2%
© 2007 JDSU. All rights reserved. 19
L4…the Future 2008
L4 Series, the Highest Power Available with One Single Emitter Design!!!
© 2007 JDSU. All rights reserved. 20
Features:• 10W operating power at 25°C• 105µm/0.22 NA pigtail• 200,000hrs MTBF• 915/940/975nm wavelengths• Isolated Anode and Cathode• RoHS Compliant• Cost Effective Package, less $$$ per Watt!!!• Fully Release to Production in January 2008
Applications:Fiber and Solid laser pumping, Direct diode material processing, Medical (dental, dermatology, surgery)
10 W 6398-L4 Development Program
© 2007 JDSU. All rights reserved. 21
L4 alpha Sample L-I Curve at 25°C
0
2
4
6
8
10
12
14
0 2 4 6 8 10 12 14 16
Current (A)
Ex-
Fib
er P
ow
er (
W)
COS
L4 0.2NA
L4 0.16NA
CE = 90%I @ 8W (.2NA) = 9.5AI @ 10W (.2NA) = 12.4A
90% coupling efficiency Very good performance into NA=0.16
© 2007 JDSU. All rights reserved. 22
Outline
1. IntroductionIntroduction
2. Operations/R&D HighlightsOperations/R&D Highlights
3. High Power Fiber Laser Pumps:High Power Fiber Laser Pumps:
1. L3 ProductsL3 Products
2. Multi-Cell Life Test Multi-Cell Life Test
3. L4 DevelopmentL4 Development
4. SHEDS Bar Results
© 2007 JDSU. All rights reserved. 23
Optimizing single-emitter efficiency
Research funded by DARPA SHEDS program promises power conversion efficiency improvements in future fiber laser pumps
Device Efficiency of Similar Structures at 25C, 940nmDashed = Commecially Available Solid Red = SHEDS Design
0
2
4
6
8
10
0 2 4 6 8 10
Drive Current (A)
Ou
tpu
t P
ow
er
(W)
30%
40%
50%
60%
70%
80%P
ow
er C
on
v. E
ff.
© 2007 JDSU. All rights reserved. 24
SHEDS 940 nm Bars
>75% Bar Efficiency at 80W and above >69% Stack Efficiency (NIST) to 500W and beyond
Performance of JDSU/SHEDS 80W Bars
0
25
50
75
100
125
150
0 20 40 60 80 100 120
Drive Current (A)
Ou
tpu
t P
ow
er (
W)
50%
55%
60%
65%
70%
75%
80%
Po
wer C
on
version
Efficien
cy
500W Lensed Water Cooled Bar : NIST Calibrated
0
100
200
300
400
500
0 20 40 60 80 100
Current (A)
Po
we
r (W
)
50%
55%
60%
65%
70%
75%
PC
E
20°C 30°C
20°C 30°C
Cooling Water Temp.
© 2007 JDSU. All rights reserved. 25
High Power 300W Bar Preliminary SpecificationPerformance Specifications
Laser Characteristics Symbol Min. Typ. Max. Unit
CW Output Power Po – – 300 W
Polarization Ratio (TE)* 95 98 – %
Center wavelength lc p/n AAAA : 907.5+/- 7.5
Part Number : Range p/n BBBB : 937.5 +/- 7.5 nm
p/n CCCC : 976 +/- 10
Bar Configuration
Total Length LTOT 9.8 10.0 10.2 mm
Cavity Length Lc - 3700 - µm
Emitter Width We – 100 – µm
Number of Emitters Ne – 49 –
Threshold current Ith – 25 32 A
Operating current Iop – 330 360 A
Operating voltage per bar Vop – 1.4 1.5 V
Conversion efficiency Po/(IopVop) 60 65 – %
FWHM beam divergence per emitter
Parallel to junction FWHM q// – 7.0 9.0 degrees
Parallel to junction 90% Power q//90% – 8.0 10.0 degrees
Perpendicular to junction FWHM q⊥ – 30 36 degrees
Spectral width Dl – 4 – nm
Cooling Water Temp. Tc – 20 – °C
Maximum Junction Temperature* Tjmax – 60 75 °C
Reliability (at Po, 25°C)
Mean time to failure MTTF TBD – – Hr
Typical value at 20°C and 0.6 NA collection optics
*Dependent on bar mounting technology
© 2007 JDSU. All rights reserved. 26
PCE Curve
© 2007 JDSU. All rights reserved. 27
Slow Axis Divergence – Single Emitter Data
FWHM 6.5 to 8.090% Power 7.0 to 9.095% Power 8.5 to 10.5
Three Samples SHEDS Individual Emitter3000um x 100um Aperture at 6.5W
0.0
0.5
1.0
-12 -8 -4 0 4 8 12
Parallel Angle
Far
Fie
ld
© 2007 JDSU. All rights reserved. 28
What’s next at JDSU?
Scaling the power on the Single Emitters Focus on the fiber laser pumps Focus on cost effective solution $/W!! Focus on higher brightness $/W/Sterradian!! Product with high level of integration leveraging the
telecom experience like the new FCD 488 laser
© 2007 JDSU. All rights reserved. 29
JDSU FCD-488 Blue Laser
Laser diode FBG PP crystal beam shaping/light loop
TelecomEDFA
© 2007 JDSU. All rights reserved. 30
Thanks to:Erik Zucker, Victor Rossin, Thomas Kraft and many other JDSU colleagues