iSIGHT Applications iSIGHT Applications inin

Electronics IndustryElectronics Industry

iSIGHT Customers in Electronics• Advanced Institute of 　　 Technology and Science(J)

• Aisin

• Black & Decker

• Canon

• Delphi Packard Electric

• Denso

• Emerson Motor

• Fuji XEROX

• Fujitsu

• General Electric

• Hitachi

• Kyocera

• Matsushita/Panasonic

• Mitsubishi Electric

• Motorola

• NEC

• Ricoh

• Samsung

• Sanyo

• Sharp

• Sony

• Toshiba

• XEROX

etc.

• Heat Exchange Unit Optimization• Halogen-IR Lamp Design Space • Power Converter Weight Reduction• 3D Coil and Magnetic Field for controlling Deflection Yoke of CRT• 3D Coil and Magnetic Field for controlling Electron Beam Orbit of Flat TV• Rubber Switch Optimization • Latch Bracket Shape Optimization Plastic Injection Molding Optimization• Plastic Injection - Structure Analysis MDO• Semiconductor Circuit Design Optimization• LCD Circuit Design Optimization• Robust Design for coating materials of semiconductor • ECU Design & Controlling Optimization• Refrigerator Internal Flow for minimizing Electric Power Consumption• Air Conditioning System Optimization• Vacuum Cleaner Intake Mechanism for maximum Inhalation with minimum Electric Power Consumption• No Exhaust Vacuum Cleaner• Laundry Machine Structure for minimizing Vibration and Noise• IH Rice Cooker Magnetic Field Optimization

Applications in Electronics Industry

Automation & Integration of EDA Process in Semiconductor Design

ProcessSimulation

ShapeSimulation

DeviceSimulation

CircuitSimulation

FunctionalitySimulation

LogicSimulation

FailureSimulation

MaskLayout

IC Test

FailureAnalysis

Parameter ofDevice Characteristics

Latency Information

Failure Dictionary

LogicSynthesis

Failure Information

Device DesignDevice Design IC DesignIC Design Mask LayoutMask Layout & Testing& Testing

Automation & Integration

Automation & Integration of EDA Process in System Design

AnalogSimulation

DigitalSimulation

PCB Positioning& Wiring

SoftwareDesign

Failure Analysis

Physical SystemTest

PrototypeTest

ReliabilityTesting

I/O Design

PCB DesignPCB Design System Design & TestingSystem Design & Testing

Automation/Integration/Optimization

Failure Information

Hitachi Semiconductor GroupHitachi Semiconductor Group ：：　　　　　　 Robust Design of MOS DevicesRobust Design of MOS Devices ：： DOE based TCAD SimulationDOE based TCAD Simulation

Robust Design

TCADCalibration

Parametric Optimization

Prototyping

Error Factor Compounding

Design Environment of MOS Devices

Requiring Robust Design of MOS

DOE ProcessDOE ProcessCalibration of Device Simulator Calibration of Device Simulator Robust Design of MOS DevicesRobust Design of MOS Devices

Issues

Requiring Multi Variables Optimization

Design Cycle Reduction

3 Month (Traditional Method)

--> 3 Weeks (Manual DOE/Taguchi Method)

--> 3 Days (Automated DOE and Optimization by iSIGHT)

Objective

Yield Improvement Time Reduction of New Devices

Design Improvement

Threshold Voltage (Vth) Deviation

±0.08 -->

SN Ratio Improvement:

25.7db --> 34.6db

±0.03

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○

○

Si BoardP

N N

GateElectrode

SourceElectrode

DrainElectrode

Id

MOS Device Concept（ NMOS ）

Impurities

DistributionProcess

Simulation

Model Parameter（ Process）

Process FlowDevice

CharacteristicsDevice

Simulation

Model Parameter（ Device）

　 Process Device Simulation

Hitachi Semiconductor GroupHitachi Semiconductor Group ：：Robust Design of MOS DevicesRobust Design of MOS Devices ：： DOE based TCAD SimulationDOE based TCAD Simulation

• Problem Definition

– 4 D.V.s for the membrane geometry

– Must consider unwanted effects in manufacturing process

– Minimize the actuation voltage of switch and maximize the recovery force

– Highly non-linear property in relation between voltage and gap

Switch On Switch Off

■ MEMS Switching Device Design

SAIT (Samsung Advanced Institute & Technology)

• Maintask

– Input 4 geometric design variables to Ansys for modeling

– This model is provided for analysis of actuation voltage

• Subtask

– From the geometry model and unwanted effects data, Abaqus and in-house codes calculate the gap based on the voltage input and check the membrane is contacted or not.

Due to the long running of Abaqus the actuation voltage must be found under 10 iterations in subtask by applying an optimization algorithm in a program.

Traditional gradient based optimization algorithms do not work because it’s very highly non-linear.

■ Process to Design

SAIT (Samsung Advanced Institute & Technology)

■ Simulation of problem

• Made simple simulation model of the actuation voltage problem by using Excel Interface

• Hooke-Jeeves algorithm is good for this problem

SAIT (Samsung Advanced Institute & Technology)

■ RSM Model

• Built RSM model by applying DOE in main task and finding the actuation voltage in subtask

• Tried to find minimized value

• Tried to analyze uncertainties in manufacturing process by applying MCS for the minima

SAIT (Samsung Advanced Institute & Technology)