IHM B modules with IGBT4 (1200V and 1700V) · I. Ludwisiak IFAG IMM INP HP Copyright © Infineon...
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Transcript of IHM B modules with IGBT4 (1200V and 1700V) · I. Ludwisiak IFAG IMM INP HP Copyright © Infineon...
Page 2Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Table of content
Key applications Key applications
Characteristics and features Characteristics and features
Usage and handlingUsage and handling
Product type range Product type range
Quality and reliability Quality and reliability
Advantages versus competitor; USPAdvantages versus competitor; USP
TechnologyTechnology
Page 3Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Typical applications for 1200V IHM modules
Industrial drives
Auxiliary drives
UPS
Welding & Heating
Page 4Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Typical applications for 1700V IHM modules
Industrial drives
Traction drives
Windmills
Auxiliary drives
Page 5Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Technology - What is new ?
New IHM B housing
FZ
Single switch
FZ
Single switch
3600
INOM3600A
3600
INOM3600A
R17
UCE1700 V
R17
UCE1700 V
H
IHM Bhousing
H
IHM Bhousing
NEW
P4
High PowerIGBT4
P4
High PowerIGBT4
NEW
_B2
Traction version
_B2
Traction version
New IGBT4 chip
Page 6Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
New IHM B housing is mechanically compatible to previous IHM A generation
IHM B housingIHM A housing
Both housing types are 100% mechanically compatible concerning
footprint - 130x140 mm housing
- 140x190 mm housing
mounting positions - to the heat sink
- to the bus bar
- to the PCB
Page 7Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
IHM B are available for industry and traction applications
Applications: Traction Industry
Module features:
Base plate: AlSiC Cu
Substrate: Optimised Al2O3
Power Cycling: Optimised Standard
Thermal Cycling: Optimised Standard
Isolation: 4 kV 3,4 kV[RMS, 50Hz, 1 Min.]
Σ = Higher Reliability Σ = Cost Efficiency
Page 8Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
The quality of the new IHM B design became improved significantly
IHM BIHM A
Part minimization, e.g. no epoxy, no internal PCB
Simplified assembly process
Higher automation level during module mounting
Use of a “1-part-housing” to avoid gaps between lid and frame
Page 9Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
New designed main terminals offer a lot of electrical and mechanical improvements
IHM A
IHM B
Increased contact surface to the bus bar by use of circular holes instead of elongated holes
Flexibility of the main terminals by use of meanders
Improved cooling of the terminals through bigger contact surface to the DCB
Reduced stray inductance
Reduced lead resistance
Page 10Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
New chip layout results in significantly better thermal performance of the module
Homogenous temperature distribution between the chips
Improved cooling due to smaller distance between chipsand mounting positions
Enlargement of the thermally active area by use of more diode chips (4 diode chips instead of 2)
IHM BIHM A
Page 11Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Improvements in the new housing generationIHM B versus IHM A in numbers
Module weight
0
300
600
900
1200
1500
1800
IHM A IHM B
wei
ght [
g]
- 20%
Module weight
0
300
600
900
1200
1500
1800
IHM A IHM B
wei
ght [
g]
- 20%
Module lead resistance
0
0,03
0,06
0,09
0,12
0,15
IHM A IHM B
Rcc'
-ee'
[mO
hm]
- 30%
Module lead resistance
0
0,03
0,06
0,09
0,12
0,15
IHM A IHM B
Rcc'
-ee'
[mO
hm]
- 30%
Module stray inductance
0
2
4
6
8
10
12
IHM A IHM B
Ls,c
e [n
H]
- 40%
Module stray inductance
0
2
4
6
8
10
12
IHM A IHM B
Ls,c
e [n
H]
- 40%
Page 12Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
IGBT4 combines all advantages of Trench & Field-Stop Technology
! high cost "! negative TK
positive TK! high on-state
voltage
positive TK reduced losses
positive TK reduced losses increased Tj
NEW
Page 13Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
IGBT4 can be operated at junction temperature Tvj,op = 150°C
New chip surface metallization for optimized bonding process
Increased Power Cycling capability ($ see reliability slides)
Short circuit capability for tp = 10µs t Tvj,op = 150°C
Up to 20% higher current IRMS possible by using Tvj,op = 150°C
Available in 8” wafer technology
5“ 6“ 8“
Page 14Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Two optimized IGBT4 types fulfill different application requirements
P4
fast switchinglow dynamic losses
E4
Switching frequency fsw
Stra
y ind
ucta
nce L
s
low dynamic lossessoft switchinglow static losses
soft switching
fast switchinglow static losses
Page 15Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Two IGBT4 types are available in 1200V and 1700V blocking voltage
High Power IGBT4:- with softly switching behaviour- can be used in applications with lower frequencies (fsw <= 4kHz)- is suitable for high current applications with higher stray inductance- the EMV behaviour is significantly improved
Medium Power IGBT4:- with fast switching behaviour- can be used in applications with higher frequencies (fsw <=8kHz)- is suitable for high current application with lower stray inductance- shows comparable switching performance like KE3
P4
E4
Page 16Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
The new 1200V IGBT4 shows significantly improved switching behaviour compared to IGBT3
Comparison of IGBT4 High Power (HP4) vs. IGBT3 (KE3)
FZ2400R12KE3 vs. FZ2400R12HP4IC = 1200A, T = 25°C, without clamping
IGBT3, VCE = 350V IGBT4, VCE = 800VIGBT3 shows beginning oscillations at already VCE > 350V.IGBT4 is good controllable in the whole VCE range
Page 17Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
The new 1700V IGBT4 shows significantly improved switching behaviour compared to IGBT3
Comparison of IGBT4 High Power (HP4) vs. IGBT3 (KE3)
FZ3600R17KE3 vs. FZ3600R17HP4IC = 3600A, VDC = 600V, T = 25°C, without clamping
IGBT3, VCE = 600V IGBT4, VCE = 900VIGBT3 shows strong oscillations and high overvoltage at already VCE > 600V.IGBT4 is good controllable in the whole VCE range
Page 18Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Turn-off behaviour of IGBT2 and IGBT4
FZ1600R17KF6C_B2Eoff = 461mJVCEmax = 1464Vbeginning of clamping
FZ1600R17HP4_B2Eoff = 425mJVCEmax = 1332V
Test conditions:UDC=900VIc=Inom=1600A T=25°CRgoff=0,9ΩRgon=1,2Ω, Ls=70nH
A comparison of the turn-off behaviour shows for IGBT4:
10% lower Eoff losses
130V lower overvoltage spike VCEmax
operation without clamping possible
Page 19Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Label of each module includes several useful information about the module
Example of a label of FZ2400R17HP4_B29 module:
For more details, see PCN 2006-11 und 2003-03
Details of bar code 128:
digit 1-5: module serial numberdigit 6-11: SAP material numberdigit 12-19: Internal production numberdigit 20-23: Date Code of productiondigit 24-25: VCEsat-classdigit 26-27: VF-class
Serial number of the module
Module type (module name)
Bar Code 128
Date Code of production(year 2008, calendar week 42)
VCEsat and VF classification(more details, see next page)
Page 20Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
VCEsat and VF classification can be used for easier paralleling of modules
Example:26 VCEsat class 2.6
includes all VCEsat values between 2.54V – 2.64V
21 VF class 2.1includes all VF values between 2.05V – 2.14V
$ By paralleling of modules with the same VCEsat/VF class the smallest parameter distribution can be reached (∆VCEsat/F = 100mV within one VCEsat/VF class)
Page 21Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
What is to consider during the mounting procedure?
An homogeneous and “as thin as possible” distribution of the thermal grease during mounting is important
Cavities between heat sink and module can result in hot spots (red marked area)
Dismounted base plate with not sufficient grease thickness
Dismounted base plate with sufficient grease thickness
Page 22Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Screen printing simplifies the mounting procedure
Homogeneous and reproducible layer of thermal grease
Grease is deposited “where it is needed”
Thickness of the grease is adjusted to cavity spec of the module
Drawing of the jig can be provided for 130x140mm and 140x190mm housing
Grease applied by screen printing after dismounting of the module- no cavities- homogeneous- “as thin as necessary”
For more details, see PCN 2004-05
Page 23Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
A lot of reliability tests are performed on IGBT modules
Type Description Conditions Standard
Normative references
related standards
HTRB High Temperature Reverse Bias
1000h, Tj = 150°C, 0.9*VCEmax (≤ 2.0 kV), 0.8*VCEmax (>2.0 kV) 1000h, Tj = 150°C, VRM=0.9*VRRM, VRM/VDM=0.8*VRRM/VDRM
IEC 60747-2/6 ch. V IEC 60747-9:1998
EN 150000 4.5.2 EN 153000 3.5.2
HTGS High Temperature Gate Stress
1000h, ±VGEmax, Tj = 150°C according to IEC 60747-9:1998
EN 150000 4.5.2
H3TRB High Humidity High Temperature Reverse Bias
1000h, 85°C, 85%RH, VCE = 0.8*VCEmax, but max. 80 V, VGE= 0V VD, VR = 0V
IEC 60749: 1996
IEC 60068-2-3 Ca: 1985
IEC 60068-2-3 Ca: 1969 EN 150000 4.4.3
TST Thermal Shock Tstg min - Tstg max, typ. –40°C to +125°C, but ∆Tmax ≤190K tstorage ≥ 1h, tchange ≤ 30 s High Power (standard): 20 cycles; Medium Power: 50 cycles, BIP: 25 cycles
IEC 60749: 1996
IEC 60068-2-14 Na: 1984
IEC 60068-2-14 Na: 1974
EN 150000 4.4.4 EN 153000 3.4.2
TC Thermal Cycling
External heating and external cooling 2 min. < tcycl. < 6 min; ∆TC= 80K, Tcmin. = 25°C High Power (standard): 2 kcycles; Medium Power, BIP: 5 kcycles
according to IEC 60747-2/6 ch. IVIEC 60747-9:1998
PC (min)
Power Cycling [min] Internal heating and external cooling 2 min. < tcycl. < 6 min; ∆TC= 50K, Tj < Tjmax High Power (standard): 20 kcycles; Medium Power, BIP: 50 kcycles
IEC 60747-2/6 ch. IV EN 153000 3.5.2
PC (sec)
Power Cycling [sec] Internal heating and external cooling 2 < tcycl < 5 sec; Tjmax = 150°C Typical: ∆Tj = 60K,130 kcycles.
IEC 60747-9:1998
RS Resistance to Solder Heat (if applicable)
260 °C ± 5 °C, 10 s ± 1 s wave IEC 60749: 1996
IEC 60068-2-20 Tb: 1979
IEC 60068-2-20 Tb: 1979 EN 150000 4.4.8
S Solderability (if applicable)
235 °C ± 5 °C, aging 3 IEC 60749: 1996
IEC 60068-2-20 Ta: 1979
IEC 60068-2-20 Ta: 1979 EN 150000 4.4.7
V Vibration (optional) In accordance with standard Typical: 5 .. 150 Hz, 20 m/s2, 2h each direction x, y, z
IEC 60749: 1996
IEC 60068-2-6 Fc: 1995
IEC 60068-2-6 Fc: 1970 EN 150000 4.4.6 EN 153000 3.4.2
• EN 150000 replaced CECC 50000:1986 equivalent to DIN 45930 part 1,
EN 150000 4.5.2 with chapter 4.5.2.5 for Diodes, 4.5.2.8 for Thyristors and 4.5.2.10 for IGBTs. • IEC changed identification number for documents in 1997 by adding 60000 to the old number, for example IEC 68 was replaced by IEC 60068.
Page 24Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Power Cycling means stress for the bond wire connections
Si chip
DCBbase plate
Solderjoint
XX
Thermal Cycles of Junction and Heatsink
0102030405060708090
100110120130140150
0 10 20 30 40 50 60
Time [min]
Tem
pera
ture
[°C
] Case TemperatureJunction Temperature
Thermal Cycles of Junction and Heatsink
0102030405060708090
100110120130140150
0 10 20 30 40 50 60
Time [min]
Tem
pera
ture
[°C
] Case TemperatureJunction Temperature
Power cycling test conditions:
Driving the chip/bond wire system at two different temperatures (∆Tvj between Tvj1 and Tvj2)
Failure criteria is an increase of the saturation voltage by 5%
These 5% are already included in the data sheet values
Page 25Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Power Cycling capability of IHM B modules
1,0E+04
1,0E+05
1,0E+06
1,0E+07
1,0E+08
1,0E+09
1,0E+10
1,0E+11
10 100
Delta Tj in K
n (N
o. o
f Cyc
les)
Tjmax = 150癈
dotted lines: estimated
20 30 40 50 60
Power Cycle curves for E4, P4, T4 module series with new mounting technology
cycle time: 3 secdotted lines: estimated
Page 26Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Thermal Cycling means stress for the soldering connections
Si chip
DCBbase plate
Solderjoint
X X
Thermal Cycles of Junction and Heatsink
0102030405060708090
100110120130140150
0 10 20 30 40 50 60
Time [min]
Tem
pera
ture
[°C
] Case TemperatureJunction Temperature
Thermal Cycles of Junction and Heatsink
0102030405060708090
100110120130140150
0 10 20 30 40 50 60
Time [min]
Tem
pera
ture
[°C
] Case TemperatureJunction Temperature
Thermal cycling test conditions:
Driving the case / base plate at two different temperatures (∆Tc between Tc1 and Tc2)
Failure criteria is an increase of the thermal resistance Rth by 20%
These 20% are already included in the data sheet values
Page 27Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Thermal Cycling capability of IHM modules
Thermal Cycling Capability for High Power Modules
1.000
10.000
100.000
1.000.000
10.000.000
30 40 50 60 70 80 90delta Tcase [K]
No.
of c
ycle
s
IHM/IHV Traction (AlSiC)PrimePACK IndustryIHM Standard (Cu)
cycle time: ton+toff typ. 5min
temperature level: Tcase,min=25°C
load conditions: T-rise by internal
active heating T-fall by external cooling
For a overall lifetime estimation the respective dependency N=f(∆Tvj) has also to be taken into account ("Power cycling curve")
dotted lines: estimated
issued 2008-12-12; rev 1
Page 28Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
Thermal Shock means stress for the whole module
Thermal shock test conditions:
Driving the whole module at two different temperatures (∆Tst between Tst1 and Tst2)
Two-chamber-test at Tst1=-40°C and Tst2 = 125°C for industryand Tst1 = -55°C and Tst2 = 125°C for special traction modules
Failure criteria is an increase of the saturation voltage by 5% and/or increase of the thermal resistance by 20%
By introduce of ultrasonic welding thermal shock capability isincreased by factor 5
Page 29Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP
The new IHM B generation offers several advantages for the customer
New IHM B housing is 100% compatible to previous generation
New IGBT4 allows operating temperature up to 150°C
20% higher IRMS are possible by use of Tvj = 150°C
Short circuit capability is given for 150°C
Two optimized versions of IGBT4 are available
Power cycling capability became increased
The quality and mechanical stability is improved
Screen printing for homogeneous applying of thermal grease is available
Green product acc. to RoHs