Microsemi 1200V NPT IGBTs - Richardson RFPD · 2019. 3. 18. · and V. F. Microsemi’s New 1200V...
Transcript of Microsemi 1200V NPT IGBTs - Richardson RFPD · 2019. 3. 18. · and V. F. Microsemi’s New 1200V...
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Power Matters
Microsemi 1200V NPT IGBTs March 2013
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Power Matters
Microsemi IGBT Product Line Switching Frequency Ranges
10 20 30 40 50 60 70 80 90 100 110 120
600V
900V
Fast NPT
1200V
Thunderbolt® NPT
Power MOS 8™ NPT (NEW!)
IGBT Switching Frequency Ranges (kHz, hard switched)
Field Stop
Thunderbolt® NPT
Power MOS 8™ PT
Power MOS 8™ PT
Thunderbolt® High Speed NPT
Power MOS 7™ PT
Field Stop
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs. current graph for more information.
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Fast Switching speeds up to 100 kHz!
Efficient 13% - 60% lower switching losses than competitors’ IGBTs
Low Cost Solution Microsemi’s new NPT IGBTs can replace 1000V to 1200V MOSFETs in applications up to 100 KHz at lower costs
Product Family • 25A to 85A discrete IGBTs • Up to 600A modules
1200V NPT IGBTs Microsemi Power MOS 8™ Technology
The New NPT IGBT Benchmark Microsemi Power MOS 8™
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IGBT package styles o D3 PAK
o TO-247
o T-MAX™
o TO-264
o ISOTOP® (SOT-227)
o Modules
IGBT package options o Single (IGBT only)
o Combi (IGBT and diode)
o Modules
1200V NPT IGBTs Microsemi Power MOS 8™ Technology
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Features o Fast switching speeds up to 100 kHz
o Low switching energy losses
o Short Circuit Withstand Time Rated (SCWT)
Benefits
o Improved System Efficiency
o Lower Temperature / Cooler Operation
o Lower cost solution vs. MOSFET up to 100kHz
o Higher Reliability
o Easy to Parallel
1200V NPT IGBTs Microsemi Power MOS 8™ Technology
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1200V NPT IGBTs Microsemi Power MOS 8™ Technology vs. Competition
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Markets • Solar inverters • Fast chargers for electric vehicles • Lasers • MRI and X-ray • UPS
Applications • Switch Mode Power Supplies (SMPS) • 1200V applications • 1kW to 10kW of power • 20kHz to 100kHz high speed switching without the cost of MOSFETs
Customers • Product designers who value high efficiency • Product designers who value high reliability • Product designers who value low cost (designing in NPT IGBT over MOSFET)
Markets, Applications, and Customers
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Customer Case Study IGBTs for MRI Gradient Amplifier
Application Medical: MRI Gradient Amplifier (20kHz Inverter)
Design Goal Improve system efficiency with new generation IGBT
Customer Options • Microsemi 1200V NPT IGBT 85A • Competitor's Trench Field Stop IGBT
Customer Solution
Microsemi Advantages • 6% lower total power loss • Low Eoff and Eon2 for fast switching • Optimized trade-off of Vce(on) and Eoff
• Optimized trade-off of Qrr and VF
Microsemi’s New 1200V NPT IGBT!
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1200V NPT IGBTs Microsemi Power MOS 8™ Product Line
BVces Vce(on) Ic2 Part Number Package StyleVolts Typ 25°C 100°C
50 kHz 80 kHz2.5 25 25 21 APT25GR120B TO-2472.5 25 25 21 APT25GR120S D3
2.5 40 38 28 APT40GR120B TO-2472.5 40 38 28 APT40GR120S D3
2.5 50 48 36 APT50GR120B2 T-MAX®2.5 50 48 36 APT50GR120L TO-264
25 kHz 50 kHz2.5 70 66 42 APT70GR120B2 T-MAX®2.5 70 66 42 APT70GR120L TO-2642.5 70 42 30 APT70GR120J ISOTOP®2.5 85 72 46 APT85GR120B2 T-MAX®2.5 85 72 46 APT85GR120L TO-2642.5 85* 46 31 APT85GR120J ISOTOP®
50 kHz 80 kHz2.5 25 25 21 APT25GR120BD15 TO-247 (DQ Diode)2.5 25 25 21 APT25GR120SD15 D3 (DQ Diode) 2.5 25 25 21 APT25GR120BSCD10 TO-247 (SiC Schottky Diode)2.5 25 25 21 APT25GR120SSCD10 D3 (SiC Schottky Diode)2.5 40 38 28 APT40GR120B2D30 T-MAX® (DQ Diode)2.5 40 38 28 APT40GR120B2SCD10 T-MAX® (SiC Schottky Diode)
25 kHz 50 kHz2.5 50* 42 32 APT50GR120JD30 ISOTOP® (DQ Diode)2.5 70* 42 30 APT70GR120JD60 ISOTOP® (DQ Diode)2.5 85* 46 31 APT85GR120JD60 ISOTOP® (DQ Diode)
* Ic2 for ISOTOP® packages measured at 70 °C for 1200V NPT IGBTs
**Combis available with Microsemi's new Ultra Soft FRED
Maximum Icat Frequency
SINGLE
1200
Combi (IGBT & Diode**)
1200
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Thank You!