HiPak IGBT modules - PPM PowerHiPak IGBT modules ABB Semiconductors’ HiPak modules are a family of...
Transcript of HiPak IGBT modules - PPM PowerHiPak IGBT modules ABB Semiconductors’ HiPak modules are a family of...
Power and productivityfor a better world™
HiPak IGBT modules
ABB Semiconductors’ HiPak modulesare a family of highpower IGBTs inindustry standard housings using thepopular 190 x 140 mm, 130 x 140 mmand 140 x 70 mm footprints.HiPak modules are the perfect matchfor demanding highpower applicationssuch as traction, T & D, renewableenergy (wind, solar) and industrial drives.
harsh conditions. This has been achieved through smoothswitching characteristics – and through rugged operation (highSOA) as this translates into operational safety margins for theequipment.
Furthermore, the SPT+ chipsets (IGBT and diode) at 1700 Vand 3300 V blocking voltages have been improved to operateat higher junction temperatures up to 150 °C in the HiPakmodules .
Table 1 on the next page shows the current HiPak productportfolio. Modules designated “HV” have isolation voltages ofup to 10.2 kVRMS. Standard types have isolation voltages of upto 6 kVRMS, depending on VCES rating.
ABB’s HiPak modules are available in three standard isolationvoltages (4, 6 and 10.2 kVRMS) and a variety of circuit confi-gurations. These modules exclusively use Aluminium SiliconCarbide (AlSiC) base-plate material and Aluminium Nitride (AlN)isolation with low thermal resistance. This specific materialcombination offers an excellent power cycling performancethanks to its matched thermal expansion coefficients (CTE).All HiPak modules feature ABB’s advanced Soft PunchThrough (SPT and SPT+) chip technology, which combineslow-losses with soft-switching performance and record-breaking Safe Operating Area (SOA).
In keeping with ABB’s reputation for offering high powersemiconductors of exceptionally high reliability, the HiPakSPT chips have been optimized for reliable operation under
SPT technologySPT is a well-established planar IGBT technology covering the range of 1200 V to 6500 V. It is characterized by smoothswitching waveforms and exceptional robustness which is of particular importance at higher voltages and currents where strayinductances are not easily minimized.
HiPak product portfolio
1.7 kV
5SND 0800M170100
5SNE 0800M170100
5SNA 1600N170100
5SNA 1800E170100
5SNA 2400E170100
5SNA 2400E170305
5SNA 3600E170300
5SLA 3600E170300
2.5 kV
5SNA 1500E250300
3.3 kV
5SNG 0250P330305
5SLG 0500P330300
5SND 0500N330300
5SNA 0800N330100
5SNE 0800E330100
5SNA 1000N330300
5SLD 1000N330300
5SLD 1200J330100
5SNA 1200E330100
5SNA 1200G330100
5SNA 1500E330305
4.5 kV
5SNG 0150P450300
5SLG 0600P450300
5SLD 0650J450300
5SNA 0650J450300
5SNA 0800J450300
5SLD 1200J450350
5SNA 1200G450300
5SNA 1200G450350
6.5 kV
5SNA 0400J650100
5SNA 0500J650300
5SLD 0600J650100
5SNA 0600G650100
5SNA 0750G650300
1700
1700
1700
1700
1700
1700
1700
1700
2500
3300
3300
3300
3300
3300
3300
3300
3300
3300
3300
3300
4500
4500
4500
4500
4500
4500
4500
4500
6500
6500
6500
6500
6500
2 x 800
800
1600
1800
2400
2400
3600
3600
1500
2 x 250
2 x 500
2 x 500
800
800
1000
2 x 1000
2 x 1200
1200
1200
1500
2 x 150
2 x 600
2 x 650
650
800
2 x 1200
1200
1200
400
500
2 x 600
600
750
M
M
N
E
E
E
E
E
E
P
P
N
N
E
N
N
J
E
G
E
P
P
J
J
J
J
G
G
J
J
J
G
G
Part number HousingVoltage VCES (V) Current IC (A) Configuration
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
190 x 140
140 x 70
140 x 70
130 X 160
130 x 140
190 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
190 x 140
140 x 70
140 x 70
130 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
130 x 140
130 x 140
130 x 140
190 x 140
190 x 140
Footprint
Dual IGBT
Chopper
Single IGBT
Single IGBT
Single IGBT
Single IGBT
Single IGBT
Single diode
Single IGBT
Half bridge
Diode bridge
Dual IGBT
Single IGBT
Chopper
Single IGBT
Dual diode
Dual diode
Single IGBT
Single IGBT
Single IGBT
Half Bridge
Diode bridge
Dual diode
Single IGBT
Single IGBT
Dual diode
Single IGBT
Single IGBT
Single IGBT
Single IGBT
Dual diode
Single IGBT
Single IGBT
*
*
*
*
*
*
*
*
*
*
+
Table 1 * TVJ (operational) up to 150 °C + 10.2 kVRMS Isolation # not for new designs
Voltage Class (V)
0
1.5
VC
E, o
n ( V
)
500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SPT
SPT+
Fig. 1 Vce(sat) for different IGBT cell technologies on SPT silicon at 125 °C.(current density of SPT range, same Eoff )
SPT+ technologySPT+ retains all the features of the SPT technology butreduces VCE SAT by up to 30 % according to the curve offigure 1 – an achievement previously believed to be possibleonly with trench technology.
#
Increased reliability with improved HiPak
The improved HiPak modules will be a direct 1:1 replacementwith identical electrical and thermal characteristics. The prin-cipal electro-mechanical layout remains unchanged. Theimprovements are realized by the following design features:
Epoxy-less housing construction for the LV HiPaks:
For low voltage HiPak modules we were able to remove theepoxy casting. This allows to increase the case temperaturerating to TC, max = 150 °C. The new package now complies withthe latest fire and smoke requirements: NFF 16-101/102 I3 –F2 and CEN TS 45545 HL2 cat. R23 required for tractionapplications.
New internal auxiliary connections:
The internal solder connections between the gate-print and thesubstrate will be substituted by standard aluminium wire bon-ding. This well established technology allows for higher reliabi-lity and offers a redundant double wire connection (figure 4).
Fig. 4 New redundant aluminium wire-bond connection of gate and auxiliary emitter
The buffer and anode designs used in the SPT+ IGBT havebeen optimized in order to obtain a high short-circuit SOAcapability, even at gate voltages exceeding the guaranteedgate drive voltage of 15 V.
High ruggedness at 6500 VIn the case of the new 6500 V SPT+ IGBT the on-state lossesexhibit a reduction of approximately 30 % when compared tothe standard SPT device. This, in combination with the im-proved ruggedness of the SPT+ IGBT has enabled an increasein the current rating from 600 A for the standard 6500 V HiPakup to 750 A for the new SPT+ version.
Figure 2 shows the extremely high turn-off ruggedness of the6500 V SPT+ IGBT setting a new benchmark for this voltageclass. A current of 2400 A – which corresponds to more thanthree times the nominal current – was switched-off against aDC-link voltage of 4500 V at a junction temperature of 125 °C.The stray inductance in this case was 750 nH, which is morethan double the value that can be expected in the targetedapplication environment and shows that the specified SOAcan be fulfilled with margin.
150 °C operationABB recently upgraded the 1700 V and 3300 V SPT+ chipsetsto be operational in HiPak modules at junction temperaturesup to 150 °C. For the IGBT, this is achieved by improveddevice structures combined with new termination designs. Thishas resulted in excellent blocking characteristic and lowreverse currents, which guarantee stable operation at 1700 Vand 3300 V up to temperatures above 150 °C.On the diode side, the plasma has been shaped for lowforward-voltage drop and soft reverse-recovery by using bothlocal and uniform lifetime control. The local lifetime control isobtained by proton (H+) irradiation. The use of hydrogenparticles has reduced the 150 °C leakage current by a factor ofthree when compared with the previous SPT diode platform.
Figure 3 shows the RBSOA test on the 3600 A 1700 V HiPak2module where a current of 10500 A is turned off at a DC-linkvoltage of 1300 V, proving the ruggedness of the SPT+ IGBT-design when paralleled in the HiPak2 module.
Fig. 2 6500 V SPT+ IGBT turn-off under SOA conditions measured atmodule level, Ppoff = 11.7 MW
Fig. 3 3600 A / 1700 V HiPak RBSOA measured at Tj = 150 °C with active clamp
IC = 2400A, VDC = 4500 V, Tj = 125°C, Lσ = 750nH
0.0
3000
2500
2000
1500
1000
500
0
-500
time (μs)
IC
VCE
VGE
7000
6000
5000
4000
3000
2000
1000
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VC
E ( V
)
I C ( A
) , 10
*VG
E ( V
)
> 3 x Inom
Nominal Current
2 3 4 5 6 7-3000
500
4000
7500
11000
-500
200
900
1600
2300
time (μs)
I C ( A
)
Vce
( V),
Vg
e ( V
) x 1
0
Ic = 10600A, Vdc = 1300 V, Lσ = 50nHRg = 0.60 ,Tj = 150°C,
Vce
VgeIc
PpOff = 15.9 MW
SummaryAs illustrated above, ABB’s HiPak family of IGBT modules con-tinues to set new standards of robustness for high reliabilityapplications. Robustness translates to higher operating safetymargins and allows low gate drive resistance at turn-off which,in turn, allows lower turn-off losses.SPT chip technology with its smooth switching behavior,
allows users the greatest freedom of design by not imposingdv/dt or peak-voltage restrictions at turn-off. The new SPT+
technology allows further loss reductions without compromi-zing any of the existing features of SPT. Further improvementson the cell design allow chipsets to operate at junctiontemperatures up to 150 °C.
5SYA2039
5SYA2098
5SYA2093
5SYA2042
5SYA2043
5SYA2045
5SYA2053
5SYA2058
5SZK9120
5SZK9111
5SZK9112
5SZK9113
Fig. 5 Stich-bond layout and improved bonding parameters boost the powercycling capability
Terminal Foot:The main terminals offer an improved solder foot with specifi-cally designed spacers in order to achieve a homogenoussolder layer thickness. This allows for an improved temperaturecycling performance.
Wire-Bonding:The emitter side wire-bonding parameters have been improvedand so called stich-bonds (figure 5) are used. This results inan improvement of factor 4 in IOL (target 2 Mcycles T = 60 K,Tvj, max = 150 °C).
The new design has been qualified with all the relevant tests:shock and vibration, temperature cycling, IOL and THB.During 2015, the improvements will be made available for thehigh-voltage housings (G, J and P).
Document number
Power and productivityfor a better world™
Table 2 Principal applications documents
Mounting Instructions for HiPak modules
Paralleling of IGBT modules
Thermal design and temperature rating of IGBT modules
Failure Rates of HiPak modules due to cosmic rays
Load-Cycle capability of HiPaks
Thermal runaway during blocking
Applying IGBTs
Surge currents for IGBT diodes
Specification of environmental class for HiPak – OPERATION (Traction)
Specification of environmental class for HiPak – STORAGE
Specification of environmental class for HiPak – TRANSPORTATION
Specification of environmental class for HiPak – OPERATION (Industry)
Doc
. N
o. 5
SYA
204
0-13
Ap
ril 2
015
/ La
yout
& A
rtw
ork
by
ww
w.2
9pal
ms.
ch
Document title
ABB Switzerland Ltd.SemiconductorsFabrikstrasse 3CH-5600 LenzburgSwitzerlandTel: +41 58 586 14 19Fax: +41 58 586 13 [email protected]/semiconductors
ABB s.r.o.SemiconductorsNovodvorska 1768/138a142 21 Prague 4Czech RepublicTel: +420 261 306 250Fax: +420 261 306 [email protected]/semiconductors
DocumentationDevice datasheets are available on ABB’s website www.abb.com/semiconductors. Additional documentation required for thereliable application of HiPak modules is available on the same site. See summary in table 2 below.