HelioVolt Printed Electronics/PV USA Dec 2010
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Transcript of HelioVolt Printed Electronics/PV USA Dec 2010
HelioVolt Confidential and Proprietary
CIGS Manufacturing Technology Matures: Perspective on ScalingB.J. Stanbery
Chief Scientist, Founder, and Chairman
Printed Electronics/Photovoltaics USA 2010
2 December 2010; Santa Clara, CA
NREL CRADA established
12% cell efficiency achieved
Series A funding
HelioVoltfounded
12% prototype moduleand 14% cell efficiency achieved
11% production module efficiency achieved
Exclusive NREL IP Agreement
Series B funding
Opened first factory in Austin, Texas
Industry veteran Jim Flanary joins as CEO
FASST® Process wins Nano50 Award
Wall Street Journal Technology Award
HelioVolt and NREL win R&D 100 Award
Time Magazine’s “Best Inventions of 2006”
2009 20102007200520032001 2006 2008
Printed Electronics Industry Award 1st production run
August 2009
Commercial agreements signed for 3 years of production
HelioVolt Corporate History
Printed Electronics/PV USA 2Dec 20102
Final Assembly& Test
ModuleFormation
FASST® CIGSProcess
GlassPreparation
Glass In
Module Out
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HelioVolt Module Production Process
Our CIGS Products vs. AlternativesOur Process
Glass In Module Out
GlassPreparation
FASST® CIGSProcess
ModuleFormation
Final Assembly& Test
Competitors’ CIGS Cell-Based Processes
Substrate In Module Out
SubstratePreparation
CIGSProcess
Contact & GridFormation
Cell Cut & Sort Cell Stringing
Silicon Process
Polysilicon Ingot Wafer Solar Cell Solar Module
Final Assembly& Test
Source: Wall Street research.
Printed Electronics/PV USA 2Dec 20104
HelioVolt CIGS Thin-Film Products
• Alloy of Copper, Indium, Gallium and Selenium• Highest efficiency single-junction thin-film PV semiconductor material
– 20.3% conversion efficiency (ZSW)
• CIGS is one of three known intrinsically stable PV materials (with Silicon and Gallium Arsenide)
– Intrinsic stability required for long lived robust products
• More efficient absorber of light than any other known semiconductor• Requires 1/100th of the material compared to silicon for comparable
light absorption
Monolithic Interconnect Structure
substrate
Moly CIGS
ZnO bufferP2
P1
P3
Printed Electronics/PV USA 2Dec 20105
Prototype Module
Scalability ProofDONE
Production Module
Commercial Production SizeNOW
Cell 14.0%
3.0%
3 Months
4.5%
12.0%
2 Months
2%
7.8%11.5%
10 Months
Product Scaling and Performance Experience
Cell
Prototype
Module Progress
1364x scale-up
8x scale-up
Effic
ienc
yEf
ficie
ncy
Effic
ienc
y4 Months
Printed Electronics/PV USA 2Dec 20106
2010 Module Efficiency Progress
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
120%
0%
1%
2%
3%
4%
5%
6%
7%
8%
9%
10%
11%
12%
MAY JUN JUL AUG SEP OCT NOV
Coef
ficie
nt o
f Var
iati
on (
CV)
Ave
rage
Eff
icie
ncy
2010
Max
EquipmentCapability Upgrade
andCharacterization
CV
Std DevAverage
CV =
Efficiency: average, maximum, and distribution improved significantly month-to-month
Printed Electronics/PV USA 2Dec 20107
11.5% Champion Module Efficiency
75 Watts
11.5%
75 W
Printed Electronics/PV USA 2Dec 20108
Pre-Certification Reliability Tests Complete• Most recent modules
underwent Damp Heat (DH) and Humidity Freeze (HF) testing for pre-certification reliability screening.
• DH Modules followed IEC protocol 1000 hours at 85°C; 85% relative humidity.
• Humidity Freeze– Half of the modules followed
IEC protocol for HF test alone.
– Half of the modules were tested per IEC protocol with 1000Hrs DH, then 1000Hrs HF.
• No loss of power, Voc, Isc in any screening tests.
Printed Electronics/PV USA 2Dec 20109
HelioVolt Module Rooftop Test ArrayPhotograph of Factory Rooftop HelioVolt module test array. Array tracks performance of HelioVolt, as well as, other thin-film and silicon modules, and inverters
Printed Electronics/PV USA 2Dec 201010
Multiple Proven Ways to Win
• First generation players have proven market and value creation
• Opportunity for technology innovation to trump incumbents on both cost and performance
22%
14%
6%
$2.00/w $1.00/w $0.50/w
Mod
ule
Effic
ienc
y
Module Cost
Low Margin Manufacturers
Next Gen InnovationPerformance Leader
$9.2B
$1.7B$1.2B
$1.2B
High Margin Manufacturers
$1.4B
Note: Market cap as of June 1, 2010.Source: Wall Street research.
Printed Electronics/PV USA 2Dec 201011
• Development work based on HelioVolt patents and trade secrets will drive module efficiency from 10% to 16%
• Applied Research – HelioVolt’s partnership with NREL will drive module efficiency from 16% to 21%
6%
12%
18%
0%2010 2011 2012 2013
Baseline Process
Active Quenching,Advanced
Composition Grading Control
Ultrafast Heating,Predictive Design
Advanced TCO,Enhanced
Transmission,Light Trapping
Roadmap to 16% Module Efficiency
Printed Electronics/PV USA 2Dec 201012
MOTIVATION FOR ALTERNATIVE APPROACH TO CIGS PROCESSING
Printed Electronics/Photovoltaics USA 2010
2 December 2010; Santa Clara, CA
Printed Electronics/PV USA 2Dec 201013
Characteristics of an Ideal CIGS Manufacturing Method• High device-quality material
– Ability to create intrinsic defect structures limiting recombination; role of the order-disorder transition?
– Ability to control Group III and VI composition gradients– Control of extrinsic doping (e.g.: sodium)
• High processing rate– Reduces capital cost for targeted throughput
• Low thermal budget– Reduces operating cost and energy payback time
• High materials utilization– Reduced materials consumption and recycling expenses
Printed Electronics/PV USA 2Dec 201014
Synopsis of Prior Art for CIGS Synthesis:Co-evaporation
• First method to achieve 10% efficiency and research approach used to make all record cells since 1989
• Simultaneous evaporation of the constituent elements onto a high-temperature (450-700°C) substrate to directly synthesize CIGS in a single stage process
• Competition between adsorption and desorption kinetics reduces (1) selenium utilization and (2) indium incorporation at temperatures near/above the order-disorder transition
• Extended dwell at high temperatures generates high thermal budget and equipment costs
Printed Electronics/PV USA 2Dec 201015
Synopsis of Prior Art for CIGS Synthesis:Metal Precursor Selenization
• Most well-developed, widely used approach for commercial manufacture of CIGS modules, providing good large-area uniformity
• Deposition of multilayer metal films by PVD, plating, or particle suspensions followed by second-stage high-temperature annealing in Se or H2Se/H2S
• Complex intermetallic alloying reactions and differential diffusion during selenization cause uncontrolled segregation
• Selenium/Sulfur diffusion limits reaction rate and resulting extended dwell at high temperature generates high thermal budget; first stage deposition method determines materials utilization efficiency and capital intensity
Printed Electronics/PV USA 2Dec 201016
Synopsis of Prior Art for CIGS Synthesis:Oxide Precursor Selenization
• High-speed printing of copper indium gallium oxide nanoparticle ink onto a metal foil substrate, subsequently annealed at high temperature in H2Se/H2S to convert the oxide into sulfo-selenide– Enables excellent materials utilization
• Reduced diffusion lengths of chalcogens in nanoparticles speeds displacement reaction
• Difficult recrystallization kinetics limit film densification and large grain growth
• Composition gradient control challenging
Printed Electronics/PV USA 2Dec 201017
Synopsis of Prior Art for CIGS Synthesis:Stacked Elemental Layers (SEL)
• Differs from the metal selenization approaches by incorporating layers of selenium, as well as the metals, into the precursor film itself– Circumvent the need to diffuse selenium through the
entire thickness of the precursor stack– Enables intervention in intermetallic formation by
stacking sequence control– Multi-step reaction kinetics shown to generate
compound intermediates prior to CIGS formation• Rapid thermal processing used in second stage to
minimize thermal budget and parasitic reactions
Printed Electronics/PV USA 2Dec 201018
REACTIVE TRANSFER PROCESSING
Printed Electronics/Photovoltaics USA 2010
2 December 2010; Santa Clara, CA
Printed Electronics/PV USA 2Dec 201019
Reactive Transfer Processing of Compound Precursors
• Two-stage process– Low-temperature
deposition of multilayer compound precursor films
– RTP reaction of compound precursorsto form CIGS
112
Cu In, Ga
Se, S
247247
112 = Cu(In,Ga)(Se,S)2247 = Cu2(In,Ga)4(Se,S)7
CuSe.Cu2Se.
Cu2Se3. .(In,Ga)2(Se,S)3
.(In,Ga)4(Se,S)3
Intermetallic Plethora
.(In,Ga) (Se,S)
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FASST® Reactive Transfer ProcessingNon-Contact Transfer (NCT™) Synthesis
Source Plate
SubstrateCIGS Layer
Heat
Source Plate with Transfer FilmPressure
Substrate
Cu, In, Ga, Se
Process Step
• Independent deposition of distinct compound precursor layers on substrate and source plate
• Rapid non-contact reaction– Turns stack into CIGS with high efficiency grains– Combines benefits of sequential selenization
with Close-Spaced Vapor Transport (CSVT) for junction optimization
• CIGS adheres to the substrate and the source plate is reused
A rapid manufacturing process reduces depreciation of capital
Printed Electronics/PV USA 2Dec 201021
Recrystallization of Nanoscale Vacuum Precursor Films Forming Large Grain CIGS
Precursor Film FASST® CIGS cross-section
© 2009 HelioVolt Corporation
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Reactive Transfer Processing Compound Precursor Deposition• Two methods have been developed for
deposition of compound precursors– Low-temperature Co-evaporation
• Equipment requirements similar to conventional single-stage co-evaporation but lower temperatures lead to higher throughput and reduced thermal budget
– Liquid Metal-Organic molecular solutions• Proprietary inks developed under NREL CRADA• Decomposition of inks leads to formation of inorganic
compound precursor films nearly indistinguishable from co-evaporated films (for some compounds)
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Cross Section Cross Section
Co-evaporatedCIGS Precursor
Film
Spray Deposited
CIGS Precursor Film
Top View Top View
MOD Comparison with Vacuum Precursor Deposition Method
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Metal-Organic Decomposition (MOD) Precursor Film Deposition• Inorganic compound reaction CIGS synthesis provides
pathway for evolutionary adoption of MOD precursors• Key drivers
– Low capital equipment cost– Low thermal budget– High throughput
• Flexibility– Good compositional control by chemical synthesis– Variety of Cu-, In- and Ga-containing inks can be synthesized
and densified to form multinary sulfo-selenide precursors• Efficient use of materials
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SEM
NREL CRADA – Hybrid CIGS by FASST®
Chalcopyrite CIGS (& Mo) (220/204) preferred orientation
achieved Exceptionally large grains Columnar structure
XRD
Printed Electronics/PV USA 2Dec 201026
Device Quality CIGS in 30 Seconds: First Ultra-Fast Heating Results
Printed Electronics/PV USA 2Dec 201027
HelioVolt Highlights• Disruptive CIGS technology• Extensive CIGS intellectual property portfolio• 9+ years and ~$145mm of R&D• Unique technology commercialization partnership with
NREL• Full-scale R&D line in Austin• Deep technical team• Technical Accomplishments – 11.5% efficiency champion
production module with >10.5% average efficiency• Efficiency roadmap to 16%+ by 2014• Plan for production expansion under development
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HelioVolt Confidential and Proprietary
Thank you!
Printed Electronics/Photovoltaics USA 2010
2 December 2010; Santa Clara, CA