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1NCNINAC
2006 Summer Undergraduate
Research Internship Program
Surface Analysis of Organic
Monolayers using FTIR and XPS
Michael Toole
Jamie Nipple
Advisor: Professor David JanesGraduate Mentors: Patrick Carpenter
Adina Scott
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Presentation Outline
Introduction to Self-Assembled Monolayers (SAMs)
Introduction to Surface Analysis (FTIR/XPS)
Applications of SAMs
Method #1: Solution Immersion
Method #2: Molecular Self-Assembly
Method #3: Electrochemical Reduction
Summary of Findings
Future Outlook
Questions
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Self-Assembled Monolayers
Single layer of molecules
Form spontaneouslyWell-defined structure
Covalently bonded
Bound to metal (Au, Ag, Cu) or
semiconductor (GaAs, Si)
substrate
Introduction: Organic Monolayers
Metal
Metal
Metal Semiconductor
Semiconductor
Semiconductor
GaAs (100) Substrate
Alkanethiol molecules (-SH)
Form S-As covalent bond
Si (111) Substrate
Benzene molecules (-C6H12)
Form Si-C covalent bond
Graphics Source: Patrick Carpenter
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Fabrication Techniques
Preparation TechniquesMolten Deposition
Melt alkanethiols to 100-200 C
Deposit onto GaAs substrate
Relatively effective
Not usable on all alkanethiols
Solution Immersion
Etch substrate with HCLRinse with DI H2O
Deposit substrate into solution
Dry on hotplate (~8 hours)
Activated NH4OH Immersion
Similar to solution immersion
Etch with NH4OH
Allow to purge for 20 hours at
room temperature
Electrochemical Reduction
Reduce aryl diazonium salts(C6N2BF4) on Si
Causes a radical reaction
Useful for benzene monolayers
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Contacting Techniques
Semiconductor
Metal
Ar backfill evaporation
GaAs substrate
GaAs substrate
Room Temp. (300 K) e-beam
evaporation
GaAs substrate
Cold (77 K) e-beam
evaporation
Decreasing
MetalPenetra
tion
Purpose: Creation on nanoscale transistorsProblems: Metal penetration
Contacting Techniques
Basic Principles:
Face substrate away from metal
Heat metal until reaches gaseous phase
Hot metal reaches substrate and is deposited
Standard (300K): Pressure in chamber pumped
down to 10-7 Torr and then sample deposited
Cold (77K): Sample cooled with liquid nitrogen
and slowly deposited
Ar Backfill: Backfilled with Ar gas to slow KEGraphics Source: Patrick Carpenter
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Research Internship Program
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Surface Analysis Techniques
Scanning Electron Microscopy (SEM) Topography
Morphology
Composition Atomic arrangement
Auger Electron Spectroscopy (AES)
Elemental composition and concentration Mapping of elements
Depth-profiling
Ellipsometry Layer thickness
Composition
Topography
Optical constants
http://www3.interscience.wiley.com/cgi-bin/fulltext/76509302/PDFSTART
www.mate.calpoly.edu/.../images/aesimage.jpg
http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=RSINAK00006700000800293000
0001&idtype=cvips&prog=normal
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Surface Analysis: XPS
Uses photons (soft x-rays 200-2000 eV) to remove core electrons fromsample = Photoemission
Produces photoelectron spectrum by
measuring the kinetic energy distribution
of emitted photoelectrons
Differences between the ionized electron
and neutral electron = Binding energy (BE)
which is direct measure of energy required to
remove concerned electron
Determines elemental concentration and
electronic state of sample surface
Images by Dmitry Zemlyanov (Purdue University)
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Surface Analysis: XPS
Binding energy is dependent on:
Level at which photoemission is occurring
Formal oxidation state of the atom
Local and chemical environment
* A change in the oxidation state or the environment will result in a
chemical shift
Other XPS capabilities
cosdd
h
cosdd
Depth-profiling
cosd
3=dh
cosd
3=d
Angle Resolved XPS X-Y Mapping
Images by Dmitry Zemlyanov (Purdue University)
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Surface Analysis: FTIR
= dkekGIxIxW ikx)(2
1
2
)0()(2)(
Images by http://spectroscopy.lbl.gov/FTIR-Martin/FTIR-
Martin_files/frame.htm
Basic Principle
Fire IR-rays at sample
Atoms (Bonds) within sample vibrate with specified frequencies
Uses of FTIR
Chemical Analysis
Match to known spectra
Match chemical groups
Electronic Information
Measure optical
conductivity
Determine whether metal,
insulator, superconductor,
semiconductor
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Applications of SAMs
Biological Sensors
Biosensing system based on molecular recognition
Electrochemistry Sensors use monolayers to impart selectivity onto an electrode Monitors pH, inorganic species, and organic molecules
Molecular Electronics
Nanoscale insulators and dielectrics Molecular switches
Rectifiers
Field effect transistors
http://www.coe.waseda.ac.jp/osaka/B-e.html
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Research Purpose Statement
Use XPS and FTIR to characterize the surface of
samples fabricated using three different
techniques
Analyze the results to determine elemental
composition, percent oxidation, and atomicbonding
Determine the effectiveness of each fabrication
technique
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Deposition Method #1:
Solution Immersion
Native oxide etchwith HCL
Addition of
NH4OH,deposit
sample, dry
on hotplate
Substrate: GaAs (100)Organic Molecule: 1-Octadecanethiol (ODT)
Covalent Bond: S-As
Procedure:
1) Oxide etched from GaAs using 1:9 HCL:DI solution
2) 5 mM molecule prepared, 5% (by volume) of 30%
NH4OH was added for continuing etching3) Substrate then submerged into solution
4) Samples then purged with N2 gas for 1 minute
5) Samples dried on 50 hotplate for 8 hours6) Samples rinsed with ethanol after drying
7) Sample re-dried with N2 gas
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Solution Immersion:
FTIR Analysis
Peaks Present
CH2 peak (2917.51 cm-1
)CH2 peak (2849.68 cm
-1)
CH3 peak (2958.60 cm-1)
Indicates
Fairly well ordered
monolayer as shown by
semi-sharp peaks and
lower wavenumbers
ODT
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Deposition Method #2:
Molecular Self-Assembly
Native oxide etchwith NH4OH
Addition of
NH4OH,
deposit
sample, dry
at room
temperature
Substrate: GaAs (100)Organic Molecule: 1-Octadecanethiol (ODT) and XYL
Covalent Bond: S-As
Procedure:
1) Oxide etched from GaAs using NH4OH
2) 5 mM molecule prepared, 5% (by volume) of 30%
NH4OH was added for continuing etching
3) Substrate then submerged into solution
4) Samples then purged with N2 gas for 1 minute
5) Samples dried at room temperature for 20 hours6) Samples rinsed with ethanol after drying
7) Sample re-dried with N2 gas
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Molecular Self-Assembly:
FTIR Analysis
ODT
Octadecanethiol
Expected: C-H3 Stretch ~2850-3000cm-1
C-H2 Stretch ~1465cm-1
Peak present at 2917.17cm-1, 2849.73cm-1
Peaks indicates successful monolayer formationSharp peaks indicate highly ordered monolayer
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Molecular Self-Assembly:
FTIR Analysis
Expanded Spectrum
XYL
Expected: C-H3 Stretch ~2850-3000cm-1
C-H2 Stretch ~1465cm-1
Peak present at 2895.26cm-1, 2849.59cm-1
Peaks indicates successful monolayer formation
Semi-Sharp peaks indicate semi-ordered monolayer
XYL
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Molecular Self-Assembly:
Contacting with Au
Indirect Evaporation Procedure
1) Substrate is faced away from
metallic source and cooled2) Argon is backfilled into the
chamber during deposition
3) Metallic Au is heated
4) Argon slows the kinetic energy of
evaporated Au particles
5) Reduced kinetic energy results in
a lower quantity of penetration6) A thin layer of Au is evaporated
on the ODT organic monolayer
Graphics Source: Patrick Carpenter
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Molecular Self-Assembly:
Contacted FTIR Analysis
ODT - AuExpanded Spectrum
Octadecanethiol contacted with Au
Expected: C-H3 Stretch ~2850-3000cm-1
C-H2 Stretch ~1465cm-1
Peak present at 2915.22cm-1, 2848.32cm-1
Correlates to peaks at 2917.17cm-1, 2849.73cm-1
Indicates successful monolayer formationIndicates successful contact with Au
S-H
MolecularStructure
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Deposition Method #3:
Electrochemical Reduction
Electrochemical reduction of aryl diazonium salts
(C6N2BF4) on Si(111) by promoting a radical reaction
P. Allongue et al. / Journal of Electroanalytical
Chemistry 550/551 (2003) 161/174
CH3
O
Silicon Substrate
Methoxybenzene MB
Br
Silicon Substrate
Bromobenzene BB
Nitrobenzene NB
O O
N
Silicon Substrate
2006 Summer Undergraduate El h i l D i i
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Electrochemical Deposition:
XPS Analysis
O1s
C1s
N1s
F1s
Br3p
Si2p
800 600 400 200 0Binding Energy (eV)
NameO 1sC 1sN 1sF 1s
Br 3pSi 2p
Pos.533285400687
184100
FWHM3.067082.807373.196432.94095
3.806322.48349
Area8831.5
26758.31254.1412.9
17167.910863.7
At%6.38
56.601.470.20
7.2228.13
BB WideO1s
C1s
N1s
F1s
Si2p
600 400 200Binding Energy (eV)
NameO 1sC 1s
N 1s
F 1sSi 2p
Pos.533286406
687100
FWHM2.911253.133133.06303
3.1542.54496
Area23154.020026.44163.0
909.716079.8
At%15.7639.954.61
0.4139.26
NB Wide MB Wide
O1s
C1s
N1s
Si2p
600 400 200 0Binding Energy (eV)
NameO 1sC 1s
N 1sSi 2p
Pos.533285400100
FWHM3.090623.316143.231622.49079
Area18332.924542.71129.4
14042.9
At%12.8750.481.29
35.36
2006 Summer Undergraduate El t h i l D iti
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Electrochemical Deposition:
XPS Analysis
Expanded view of Si 2p
Wide
None
x10
10
20
30
40
50
60
70
CPS
108 106 104 102 100 98 96Binding Energy (eV)
Nitrobenzene Bromobenzene Methoxybenzene
WideNone
5
10
15
20
25
30
35
40
45
50
55
CPS
108 106 104 102 100 98 96Binding Energy (eV)
Wid
eNone
10
20
30
40
50
60
CPS
108 106 104 102 100 98 96Binding Energy (eV)
2p Ox
2p 1/2
2p 3/2
2p Ox
2p 1/2
2p 3/2
2p Ox
2p 1/2
2p 3/2
2p 1/2: spin-orbit splitting (teal)
2p 3/2: spin-orbit splitting (purple)
2p Ox: sample oxidation (red)
2006 Summer Undergraduate Electrochemical Deposition:
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Electrochemical Deposition:
XPS Analysis
Sample Oxidation
BB Position %Conc.
Si 2p 1/2 100.1 39.89
Si 2p 3/2 99.5 53.01
Si 2p Ox 102.7 7.10
MB Position % Conc.
Si 2p 1/2 101.1 59.31
Si 2p 3/2 99.6 34.29
Si 2p Ox 103.0 6.40
NB Position % Conc.
Si 2p 1/2 101.1 45.29
Si 2p 3/2 99.5 43.75
Si 2p Ox 103.6 10.96
Surface Oxidation: 4.3% Surface Oxidation: 1.99% Surface Oxidation: 2.26%
2006 Summer Undergraduate Electrochemical Reduction:
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Electrochemical Reduction:
XPS Analysis
Surface Characterization:Depth Information
NB % Si 2p Ox
% Si 2p
+1 d BB % Si 2p Ox % Si 2p+1 d MB % Si 2p Ox % Si 2p+1 d
0 4.3 35.96 65.6 1.99 27.14 80.71 2.26 34.1 83.83
-30.06 4.88 35.38 13.05 2.02 27.11 17.1 1.88 34.49 19.16
-45 5.59 34.67 29.61 3.17 24.96 34.12 3.52 32.84 36.23
-59.94 7.27 32.99 45.27 4.59 24.54 48.85 4.01 32.35 62.49
-75.06 11.11 29.15 28.1086 4.7 24.43 48.03 4.86 31.5 54.46
cosexp10
dNNelastic
=
Graph is not linear:
Islands of oxidation on
sample surface
NB
0
10
20
30
40
50
60
70
0 1 2 3 4 5 6
Series1
2006 Summer Undergraduate Electrochemical Deposition:
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Electrochemical Deposition:
FTIR Analysis
Bromobenzene
Br
Silicon Substrate
Bromobenzene
Expexted: C-Br peak ~560-620cm-1
Aromatic =CH2 ~2950-3050cm-1
Aromatic C=C ~1475-1600cm-1
Peak present at 1055.91cm-1
Indicates oxidation of substrate
No conclusive monolayer formation
Expanded Spectrum
MolecularStructure
2006 Summer Undergraduate Electrochemical Deposition:
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Electrochemical Deposition:
FTIR Analysis
MethoxybenzeneCH3
O
Silicon Substrate
Methoxybenzene
Expected: OCH3 ~2900-3000cm-1
Aromatic C=C ~1475-1600cm-1
Peak present at 1105.08 cm-1
Indicates oxidation of substrate
Peaks present at 2936.45, 2927.08, 2916.24cm-1
Indicates successful monolayer formation
Expanded Spectrum
2006 Summer Undergraduate Electrochemical Deposition:
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Electrochemical Deposition:
FTIR Analysis
O O
N
CH3
Silicon Substrate
2-Methyl-4-
Nitrobenzene
2-Methyl-4-Nitrobenzene
Expected: N-O2 peak ~1460cm-1
Amine N-H2 peak ~1350cm-1
Peak present at 1105.98cm-1
Indicates oxidation of substrate
No other peaks present
No conclusive monolayer formation
Expanded Spectrum
2006 Summer Undergraduate Electrochemical Deposition:
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Electrochemical Deposition:
FTIR Analysis
O O
N
Silicon Substrate
NitrobenzeneExpanded Spectrum
Nitrobenzene
Expected: N-O2 peak ~1460cm-1
Amine N-H2 peak ~1350cm-1
Peak present at 1105.96cm-1 (Oxidation)
Peaks present at 2957.85, 2908.06cm-1
Indicates semi-successful monolayer formation
Broad peaks indicate unordered or multiple layers
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Summary of Results
Solution immersion and self-assembly method wereboth effective in monolayer formation
Self-assembly method with NH4OH is more effective
for monolayer formation upon GaAs (100) as shown by
peak intensity
Contacting molecule with Au resulted in a highly-
ordered, low-penetrated compound when using self-
assembly method
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Summary of Results
FTIR of nitrobenzene and methoxybenzene indicate semi-successful monolayer formation on Si (111), although multiple
layers may have been present on nitrobenzene
FTIR of bromobenzene and 2-methyl-4-nitrobenzene indicate
no indication of successful monolayer formation on Si (111)
XPS results indicate successful monolayer formation of all the
functional groups tested
XPS indicate show ~2-4% oxidation upon substrates when
using the electrochemical reduction method, often in islands
2006 Summer UndergraduateFuture Outlook of SAMs
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Future Outlook of SAMs
Extension of two-dimensional capabilities intothree dimensions Carbon nanotubes
Nanoparticles Dendrimers
Molecular wires
Molecular level control of integrated molecular systemswill result in useful nanodevices
Concern Long-term stability and robustness of alkanethiol chemistry
Research possible systems with more robust bonds or use new alkylchains
Functional device yield
www.ewels.info nanobot.blogspot.com www.cdtltd.co.uk www.physics.purdue.edu
2006 Summer UndergraduateAcknowledgements
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bnw=101&prev=/images%3Fq%3Dnanoparticle%26svnum%3D10%26hl%3Den%26lr%3Dhttp://images.google.com/imgres?imgurl=http://www.ewels.info/img/science/nanotubes/tube.angled.jpg&imgrefurl=http://www.ewels.info/img/science/nano.html&h=607&w=360&sz=26&hl=en&start=2&tbnid=EDw1usn1kdJ-oM:&tbnh=136&tbnw=81&prev=/images%3Fq%3Dcarbon%2Bnanotubes%26svnum%3D10%26hl%3Den%26lr%3D%26sa%3DG 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7/21/2019 Final Suri Presentation
31/32
Research Internship Program
31NCNINAC
Acknowledgements
A special thanks to
NASA INAC
SURI 2006
Purdue University
Professor David Janes
Patrick Carpenter and Adina Scott
2006 Summer UndergraduateAny Questions?
-
7/21/2019 Final Suri Presentation
32/32
Research Internship Program
32NCNINAC
Any Questions?