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![Page 1: ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.](https://reader033.fdocuments.us/reader033/viewer/2022051614/5519b8ee55034660578b48cf/html5/thumbnails/1.jpg)
ECA1212Introduction to Electrical &
Electronics EngineeringChapter 6: Field Effect Transistor
by Muhazam Mustapha, October 2011
![Page 2: ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.](https://reader033.fdocuments.us/reader033/viewer/2022051614/5519b8ee55034660578b48cf/html5/thumbnails/2.jpg)
Learning Outcome
• Be able to explain some basic physical theory and operation of FET
• Be able to do calculation on DC and AC analysis on FET circuit
By the end of this chapter students are expected to:
![Page 3: ECA1212 Introduction to Electrical & Electronics Engineering Chapter 6: Field Effect Transistor by Muhazam Mustapha, October 2011.](https://reader033.fdocuments.us/reader033/viewer/2022051614/5519b8ee55034660578b48cf/html5/thumbnails/3.jpg)
Chapter Content
• Theory of FET
• FET Operation
• FET in Digital Circuit
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Field Effect Transistor
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Field Effect Transistor
• FET is a piece of electronic device that conducts electricity by the control of a gate
• It can be considered as a voltage controlled resistor or voltage controlled current source
Gate
• Current flows through the center body of channel from terminals called drain to source
• Gate is a plate not touching the substrate
Drain
Source
Channel
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FET Types
• There are many types of FET– MOSFET – Metal Oxide Semiconductor FET– JFET – Junction FET– NMOS – n-channel MOSFET– PMOS – p-channel MOSFET
• We will cover mostly NMOS
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Channel Types
• FET is also characterized by its channel
• n-channel– The majority carrier in the channel is electron
• p-channel– The majority carrier in the channel is hole
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Modes
• Enhancement mode– FET is normally NOT conducting current even
when given voltage at drain and source– Gate is to increase the current
• Depletion mode– FET is normally conducting current when
given voltage at drain and source– Gate is to decrease the current
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Depletion Mode
Drain
Source
Gate
• p-channel– Current flow is reduced by
putting a positive voltage at gate to repel holes flow and finally block the current
– The more positive the gate, the less current flow
+ve
−ve
p-channel
Hole Flow
Gate’s electric field repelling holes
+ve
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Depletion Mode
Drain
Source
Gate
• n-channel– Current flow is reduced by
putting a negative voltage at gate to repel electrons flow and finally block the current
– The more negative the gate, the less current flow
+ve
−ve
n-channel
Electron Flow
Gate’s electric field repelling electrons
−ve
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Enhancement Mode (PMOS)
Drain
Source
Gate
• p-channel– When negative voltage is put
to drain that is made of highly p dopant (p+), reverse bias junction is formed at drain – hence no current flows
– Negative voltage is put to gate to attract holes and effectively compensate the reverse biases – until current can flow
−ve
+ve
n-substrate
Gate’s electric field attracting holes
p-channel formation
p+
−ve
p+
Hole Flow
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Enhancement Mode (NMOS)
Drain
Source
Gate
• n-channel– When positive voltage is put
to drain that is made of highly n dopant (n+), reverse bias junction is formed at drain – hence no current flows
– Positive voltage is put to gate to attract electrons and effectively compensate the reverse biases – until current can flow
+ve
−ve
p-substrate
Gate’s electric field attracting electrons
n-channel formation
n+
+ve
n+
Electron Flow
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Circuit Symbol and Notations
n-channel
p-channel
Depletion Enhancement JFET
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Operation Region
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I-V Characteristic
Ohmic Region
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.5V
ID, mA
Saturation Region
Cutoff Region
VDS, V0 1 2 3 4 5 6 7 8 9
15
10
5
0
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Operation Region
• Cutoff– VGS < VT and VGD < VT
– No current flow
• Ohmic / Triode– VGS > VT and VGD > VT
– Linear I-V characteristic
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Operation Region
• Saturation– VGS > VT and VGD < VT
– ID is controlled by VGS (Saturation Region Formula):
2)( TGSD VVKI
Conductance parameter
Threshold voltage – minimum voltage to form a conducting channel
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FET In Digital Circuit
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NAND, NOR and NOT Gates
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