Datasheet - A2C35S12M3-F - ACEPACK™ 2 converter inverter ...

ACEPACKTM 2

Features• ACEPACK™ 2 power module

– DBC Cu Al2O3 Cu• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter– 1200 V, 35 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Motor drives

DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status link

A2C35S12M3-F

Product summary

Order code A2C35S12M3-F

Marking A2C35S12M3-F

Package ACEPACK™ 2

Leads type Press fit contact pins

ACEPACK™ 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC

A2C35S12M3-F

Datasheet

DS11632 - Rev 4 - January 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/A2C35S12M3-F

http://www.st.com

1 Electrical ratings

1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol Description Value Unit

VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current (TC = 100 °C) 35 A

ICP(1) Pulsed collector current (tp = 1 ms) 70 A

VGE Gate-emitter voltage ± 20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 250 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitterbreakdown voltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)

(terminal)Collector-emittersaturation voltage

VGE = 15 V, IC= 35 A 1.95 2.45 V

VGE = 15 V, IC = 35 A, TJ = 150 ˚C 2.3 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 μA

IGESGate-emitter leakagecurrent VCE = 0 V, VGE = ±20 V ±500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

2154 pF

Coes Output capacitance 164 pF

CresReverse transfercapacitance 86 pF

Qg Total gate chargeVCC = 960 V, IC = 35 A,VGE = ±15 V 163 nC

td(on) Turn-on delay time VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1460 A/µs

127 ns

tr Current rise time 18.5 ns

Eon (1) Turn-on switching energy 1.065 mJ

A2C35S12M3-F Electrical ratings

DS11632 - Rev 4 page 2/19


td(off) Turn-off delay time VCC = 600 V, IC = 35 A,

R G = 10 Ω, VGE = ±15 V,

dv/dt = 9000 V/µs

135 ns

tf Current fall time 133 ns

Eoff (2) Turn-off switching energy 1.83 mJ


RG = 10 Ω, VGE = ±15 V,

di/dt = 1424 A/µs, TJ = 150 °C

125 ns

tr Current rise time 20 ns



RG = 10 Ω, VGE = ±15 V,

dv/dt = 7500 V/µs, TJ = 150 °C

140 ns



tSCShort-circuit withstandtime

VCC ≤ 600 V, VGE ≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistancejunction-to-case Each IGBT 0.55 0.60 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT,λgrease = 1 W/(m·°C) 0.70 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

IF Continuous forward current (TC = 100 °C) 35 A

IFP(1) Pulsed forward current (tp = 1 ms) 70 A



1. Pulse width limited by maximum junction temperature

Table 4. Electrical characteristics of the diode, inverter stage


VF

(terminal)Forward voltage

IF = 35 A - 2.95 4.1V

IF = 35 A, TJ = 150 ˚C - 2.3

trr Reverse recovery time

IF = 35 A, VR = 600 V,

VGE = ±15 V, diF/dt = 1460 A/μs

- 200 ns

Qrr Reverse recovery charge - 2.7 µC

Irrm Reverse recovery current - 43 A

Erec Reverse recovery energy - 1.1 mJ

A2C35S12M3-FInverter stage

DS11632 - Rev 4 page 3/19


trr Reverse recovery timeIF = 35 A, VR = 600 V,

VGE = ±15 V, diF/dt = 1424 A/μs,

TJ = 150 °C

- 380 ns




RTHj-cThermal resistancejunction-to-case Each diode - 0.80 0.90 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W

1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage


VCES Collector-emitter voltage (VGE = 0) 1200 V

IC Continuous collector current (TC = 100 °C) 35 A

ICP (1) Pulsed collector current (tp = 1 ms) 70 A

VGE Gate-emitter voltage ±20 V

PTOTTotal power dissipation of each IGBT

(TC = 25 °C, TJ = 175 °C)250 W


TJopOperating junction temperature range underswitching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 6. Electrical characteristics of the IGBT, brake stage


V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 1200 V

VCE(sat)

(terminal)Collector-emitter saturationvoltage

VGE = 15 V, IC = 35 A 1.95

VVGE = 15 V, IC = 35 A,

TJ = 150 ˚C2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA

Cies Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

2154 pF

Coes Output capacitance 164 pF

Cres Reverse transfer capacitance 86 pF

A2C35S12M3-FBrake stage

DS11632 - Rev 4 page 4/19


Qg Total gate chargeVCC = 960 V, IC = 35 A,

VGE = ±15 V163 nC


RG = 10 Ω, VGE = ±15 V,

di/dt = 1460 A/µs

127 ns

tr Current rise time 18.5 ns



RG = 10 Ω, VGE = ±15 V,

dv/dt = 9000 V/µs

135 ns




RG = 10 Ω, VGE = ±15 V,

di/dt = 1424 A/µs,TJ = 150 °C

125 ns

tr Current rise time 20 ns



RG = 10 Ω, VGE = ±15 V,

dv/dt = 7500 V/µs,TJ = 150 °C

140 ns



tSC Short-circuit withstand timeVCC ≤ 600 V, VGE≤ 15 V,

TJstart ≤ 150 °C10 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.55 0.60 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.70 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.


DS11632 - Rev 4 page 5/19

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage


VRRM Repetitive peak reverse voltage 1200 Vrms

IF Continuous forward current (TC = 100 °C) 35 A

IFP(1) Pulsed forward current (tp = 1 ms) 70 A



1. Pulse width limited by maximum junction temperature

Table 8. Electrical characteristics of the diode, brake stage


VF


IF = 35 A - 2.95V

IF = 35 A, TJ = 150 ˚C - 2.3


IF = 35 A, VR = 600 V, VGE = ±15 V,di/dt = 1460 A/μs

- 200 ns





IF = 35 A, VR = 600 V, VGE = ±15 V,di/dt = 1424 A/μs, TJ = 150 °C

- 380 ns




RTHj-cThermal resistancejunction-to-case Each diode - 0.80 0.90 °C/W



DS11632 - Rev 4 page 6/19

1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.

Table 9. Absolute maximum ratings of the bridge rectifiers

Symbol Description Value Unit

VRRM Repetitive peak reverse voltage 1600 V

IF RMS forward current 70 A

IFSMForward surge current, tp = 10 ms, TC = 25 °C 450

AForward surge current, tp = 10 ms, TC = 150 °C 365

I2ttp = 10 ms, TC = 25 °C 1012

A2stp = 10 ms, TC = 150 °C 666



Table 10. Electrical characteristics of the bridge rectifiers


VF


IF = 35 A - 1.12 1.5V

IF = 35 A, TJ = 150 ˚C - 1.02

IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA

RTHj-cThermal resistance junction-to-case Each diode - 1.00 1.10 °C/W


A2C35S12M3-FConverter stage

DS11632 - Rev 4 page 7/19

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone


R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

1.5 Package

Table 12. ACEPACK™ 2 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 33.5 nH

Rs Module single lead resistance, terminal-to-chip 3.6 mΩ

A2C35S12M3-FNTC

DS11632 - Rev 4 page 8/19

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT230820171146OC25

60

50

40

30

20

10

00 1 2 3 4 5

IC (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT230820171148OC175

60

50

40

30

20

10

00 1 2 3 4 5

IC (A)

VCE (V)

9 V

17 V

19 V

15 V

13 V11 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT230820171148TCH

60

50

40

30

20

10

05 6 7 8 9 10 11

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT061120180836CCT

70

60

50

40

30

20

10

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

A2C35S12M3-FElectrical characteristics (curves)

DS11632 - Rev 4 page 9/19

Figure 7. Switching energy vs gate resistance

IGBT200920171149SLG

9

8

7

6

5

4

3

2

100 20 40 60 80 100 120 140

E (mJ)

RG (Ω)

VCC = 600 V, IC = 35 A, VGE ±15 V

Eon (TJ = 150 °C)

Eon (TJ = 25°C)

Eoff (TJ = 150 °C)

Eoff (TJ = 25 °C)

Figure 8. Switching energy vs collector current

IGBT200920171150SLC

5

4

3

2

1

05 15 25 35 45 55 65

E (mJ)

IC (A)

VCC = 600 V, RG = 10 Ω, VGE ± 15 V

Eon (TJ = 150 °C)

Eoff (TJ = 25 °C)

Eon (TJ = 25 °C)

Eoff (TJ = 150 °C)

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT230820171151FSOA

70

60

50

40

30

20

10

00 200 400 600 800 1000 1200

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 10 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT230820171154DVF

60

50

40

30

20

10

00 1 2 3 4

IF (A)

VF (V)

TJ = 25 °C

TJ = 150 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT200920171151RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0300 600 900 1200

Erec (mJ)

di/dt (A/µs)

TJ =150 °C

TJ =25 °C

VCE = 600 V, IF = 35 A, VGE = ±15 V

Figure 12. Diode reverse recovery energy vs forwardcurrent

IGBT200920171153DVF

4.2

3.6

3.0

2.4

1.8

1.2

0.6

05 15 25 35 45 55 65

Erec (mJ)

IF (A)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, VGE ± 15 V, RG = 10 Ω


DS11632 - Rev 4 page 10/19

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT200920171155STR

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

00 20 40 60 80 100 120 140

Erec (mJ)

RG (Ω)

VCC = ?? V, VGE = ??? V, IC = ?? A, TJ = ??? °C

TJ = 25 °C

VCE = 600 V, VGE ± 15 V, IF = 35 A

TJ = 150 °C

Figure 14. Converter diode forward characteristics(terminal)

IGBT200920171157DVF

60

50

40

30

20

10

00 0.4 0.8 1.2 VF (V)

IF (A)

TJ = 25 °C

TJ = 150 °C

Figure 15. IGBT thermal impedance

IGBTMT200920171200MTZTH

10 0

10 -1

10 -2

10 -3 10 -2 10 -1 10 0

Zth(°C/W)

t (s)

Zth(typ.) JH

Zth(max.) JC

JC

i 1 2 3 4ri (˚C/W) 0.0604 0.2621 0.1843 0.0904τi (s) 0.0003 0.0076 0.0419 0.2996

JH

i 1 2 3 4ri (˚C/W) 0.0682 0.2709 0.5707 0.3361τi (s) 0.0004 0.0121 0.0771 0.3387

RC - Foster Thermal Network


Figure 16. Inverter diode thermal impedance

IGBT200920171201MTNZTH

100

10-1

10-3 10-2 10-1 100

Zth(°C/W)

t (s)

Zth(typ.) JH

Zth(max.) JC JCi 1 3 2 4ri (˚C/W) 0.1195 0.3712 0.2853 0.1204τi(s) 0.0008 0.0072 0.0380 0.2661

JHi 1 2 3 4ri (˚C/W) 0.1350 0.3562 0.6636 0.3902τi(s) 0.0010 0.0113 0.0671 0.2975




DS11632 - Rev 4 page 11/19

3 Test circuits

Figure 17. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 18. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 19. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 20. Diode reverse recovery waveform

25

A2C35S12M3-FTest circuits

DS11632 - Rev 4 page 12/19

4 Topology and pin description

Figure 21. Electrical topology and pin description

L3

L1L2

P

N

P1

GB

B

NB

T1U

T2

VW

EU EV EW

G1

G2

G3

G4

G5

G6

Figure 22. Package top view with CIB pinout

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1 PP

N

G13G V V

G5

T2

T1

EW G4EV EV G2EU EU NB

P1

W W U U

N

A2C35S12M3-FTopology and pin description

DS11632 - Rev 4 page 13/19

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

A2C35S12M3-FPackage information

DS11632 - Rev 4 page 14/19

https://www.st.com/ecopack

http://www.st.com

5.1 ACEPACK™ 2 CIB press fit contact pins package information

Figure 23. ACEPACK™ 2 CIB press fit contact pins package outline (dimensions are in mm)

56.7±0.3

51±0.15

22.7±0.3

16.4±0.2

4.5±0.1

1.3±0.2

2.5±0.2

62.

8±0.

5

48±

0.3

53±

0.1

42.5

±0.

2

52.7 REF

37

REF

Detail A 3.5 REF x45°

2.3

REF

8.5

0.00

9.60

16.00

19.20

22.40

25.60

28.80

32.00

0.00

3.20

6.40

9.60

12.8

0

16.0

019

.20

22.4

0

25.6

0

28.8

0

32.0

0

35.2

0

38.4

0

41.6

0

44.8

0

48.0

0

12.80

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1 P

N

UG13G V VW

G5

T2

T1

EW G4EV EV G2EU EU NB

P1

3.2

BSC

P

N

W U

8569722_ACEPACK2_CIB_Press_fit_contact_pins_rev4

12±

0.35

16.4

±0.

5

AA

3.2 BSC

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A2C35S12M3-FACEPACK™ 2 CIB press fit contact pins package information

DS11632 - Rev 4 page 15/19

Figure 24. ACEPACK™ 2 CIB press fit contact pins recommended PCB holes layout (dimensions are inmm)

8569722_ACEPACK2_CIB_Press_fit_contact_pins_PCBholes_rev4

A2C35S12M3-FACEPACK™ 2 CIB press fit contact pins package information

DS11632 - Rev 4 page 16/19

Revision history

Table 13. Document revision history

Date Revision Changes

03-May-2016 1 Initial release.

22-Sep-2017 2

Updated title, features and description in cover page.

Updated Table 1: "Device summary", Section 1: "Electrical ratings", Section 2:"Electrical characteristics curves", Section 4: "Topology and pin description" andSection 5: "Package information".

Minor text changes.

22-Mar-2018 3

Removed maturity status indication from cover page. The document status isproduction data.

Updated features on cover page.

Updated Table 10. Electrical characteristics of the bridge rectifiers.

Updated Figure 14. IGBT thermal impedance and Figure 15. Inverter diode thermalimpedance.

Updated Section 5.1 ACEPACK™ 2 CIB press fit contact pins package information.

Minor text changes

09-Jan-2019 4Updated Section 2 Electrical characteristics (curves).

Minor text changes

A2C35S12M3-F

DS11632 - Rev 4 page 17/19

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

5.1 ACEPACK™ 2 CIB press fit contact pins package information . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

A2C35S12M3-FContents

DS11632 - Rev 4 page 18/19

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

A2C35S12M3-F

DS11632 - Rev 4 page 19/19

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