Datasheet - A2P75S12M3 - ACEPACK™ 2 sixpack topology, 1200 ... · This power module is a sixpack...
Transcript of Datasheet - A2P75S12M3 - ACEPACK™ 2 sixpack topology, 1200 ... · This power module is a sixpack...
ACEPACK™ 2
Features• ACEPACK™ 2 power module
– DBC Cu Al2O3 Cu• Sixpack topology
– 1200 V, 75 A IGBTs and diodes– Soft and fast recovery diode
• Integrated NTC
Applications• Inverters• Industrial• Motor drives
DescriptionThis power module is a sixpack topology in an ACEPACK™ 2 package with NTC,integrating the advanced trench gate field-stop technologies fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.
Product status
A2P75S12M3
Product summary
Order code A2P75S12M3
Marking A2P75S12M3
Package ACEPACK™ 2
Leads type Solder contact pins
ACEPACK™ 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
A2P75S12M3
Datasheet
DS11655 - Rev 6 - January 2019For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
1.1 IGBTLimiting values at TJ = 25 °C, unless otherwise specified.
Table 1. Absolute maximum ratings of the IGBT
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0) 1200 V
IC Continuous collector current (TC = 100 °C) 75 A
ICP (1) Pulsed collector current (tp = 1 ms) 150 A
VGE Gate-emitter voltage ±20 V
PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 454.5 W
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature.
Table 2. Electrical characteristics of the IGBT
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitterbreakdown voltage IC = 1 mA, VGE = 0 V 1200 V
VCE(sat)
(terminal)Collector-emittersaturation voltage
VGE = 15 V, IC= 75 A 1.95 2.3
VVGE = 15 V, IC = 75 A,TJ = 150 ˚C 2.3
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 1200 V 100 µA
IGESGate-emitter leakagecurrent VCE = 0 V, VGE = ± 20 V ± 500 nA
Cies Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
4700 pF
Coes Output capacitance 350 pF
CresReverse transfercapacitance 190 pF
Qg Total gate charge VCC = 960 V, IC = 75 A, VGE = ±15 V 350 nC
td(on) Turn-on delay timeVCC = 600 V, IC = 75 A, RG = 10 Ω,
VGE = ±15 V, di/dt = 1900 A/µs
198 ns
tr Current rise time 32 ns
Eon (1) Turn-on switchingenergy 3.59 mJ
A2P75S12M3 Electrical ratings
DS11655 - Rev 6 page 2/13
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(off) Turn-off delay timeVCC = 600 V, IC = 75 A,
RG = 10 Ω, VGE = ±15 V,dv/dt = 6000 V/µs;
250 ns
tf Current fall time 159 ns
Eoff (2) Turn-off switchingenergy 5.13 mJ
td(on) Turn-on delay time VCC = 600 V, IC = 75 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1718 A/µs, TJ = 150 °C
200 ns
tr Current rise time 35 ns
Eon (1) Turn-on switchingenergy 6.28 mJ
td(off) Turn-off delay time VCC = 600 V, IC = 75 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 4900 V/µs, TJ = 150 °C
266 ns
tf Current fall time 251 ns
Eoff (2) Turn-off switchingenergy 7.7 mJ
tSCShort-circuit withstandtime
VCC ≤ 600 V, VGE ≤ 15 V,
TJstart ≤ 150 °C10 µs
RTHj-cThermal resistancejunction-to-case Each IGBT 0.30 0.33 °C/W
RTHc-hThermal resistancecase-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.60 °C/W
1. Including the reverse recovery of the diode.2. Including the tail of the collector current.
1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.
Table 3. Absolute maximum ratings of the diode
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 Vrms
IF Continuous forward current (TC = 100 °C) 75 A
IFP (1) Pulsed forward current (tp = 1 ms) 150 A
TJMAX Maximum junction temperature 175 °C
TJop Operating junction temperature range under switching conditions -40 to 150 °C
1. Pulse width limited by maximum junction temperature.
A2P75S12M3Diode
DS11655 - Rev 6 page 3/13
Table 4. Electrical characteristics of the diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
VF
(terminal)Forward voltage
IF = 75 A - 2.95 4.1V
IF = 75 A, TJ = 150 °C - 2.3
trr Reverse recovery timeIF = 75 A, VR = 600 V,
VGE = ±15 V,
di/dt = 1900 A/μs
- 200 ns
Qrr Reverse recovery charge - 6.0 µC
Irrm Reverse recovery current - 78 A
Erec Reverse recovery energy - 2.2 mJ
trr Reverse recovery time IF = 75 A, VR = 600 V,
VGE = ±15 V,
di/dt = 1718 A/μs,
TJ = 150 °C
- 500 ns
Qrr Reverse recovery charge - 12.5 µC
Irrm Reverse recovery current - 90 A
Erec Reverse recovery energy - 5.2 mJ
RTHj-cThermal resistancejunction-to-case Each diode - 0.55 0.60 °C/W
RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.75 °C/W
1.3 NTC
Table 5. NTC temperature sensor, considered as stand-alone
Symbol Parameter Test conditions Min. Typ. Max. Unit
R25 Resistance T = 25 °C 5 kΩ
R100 Resistance T = 100 °C 493 Ω
ΔR/R Deviation of R100 -5 +5 %
B25/50 B-constant 3375 K
B25/80 B-constant 3411 K
T Operating temperature range -40 150 °C
Figure 1. NTC resistance vs temperature
GADG260720171142NTC
10 4
10 3
10 2 0 25 50 75 100 125
R (Ω)
TC (°C)
Figure 2. NTC resistance vs temperature, zoom
GADG260720171151NTCZ
800
700
600
500
400
30085 90 95 100 105 110
R (Ω)
TC (°C)
max
min
typ
A2P75S12M3NTC
DS11655 - Rev 6 page 4/13
1.4 Package
Table 6. ACEPACK™ 2 package
Symbol Parameter Min. Typ. Max. Unit
Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms
Tstg Storage temperature -40 125 °C
CTI Comparative tracking index 200
Ls Stray inductance module P1 - EW loop 33.5 nH
Rs Module single lead resistance, terminal to chip 3.6 mΩ
A2P75S12M3Package
DS11655 - Rev 6 page 5/13
2 Electrical characteristics curves
Figure 3. IGBT output characteristics(VGE = 15 V, terminal)
IGBT191020171345OC25
125
100
75
50
25
00 1 2 3 4
IC (A)
VCE (V)
TJ = 25 °C
TJ = 150 °C
Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)
IGBT191020171348OC25
125
100
75
50
25
00 1 2 3 4
IC (A)
VCE (V)
TJ = 150 °C 19 V
17 V 13 V
11 V
15 V 9 V
Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)
IGBT191020171350OC25
125
100
75
50
25
05 7 9 11
IC (A)
VGE (V)
TJ = 25 °C
TJ = 150 °C
Figure 6. IGBT collector current vs case temperature
GADG160120190936CCT
140
120
100
80
60
40
20
00 25 50 75 100 125 150
IC (A)
TC (°C)
VCC = 15 VTJ = 175 °C
A2P75S12M3Electrical characteristics curves
DS11655 - Rev 6 page 6/13
Figure 7. Switching energy vs gate resistance
IGBT191020171351SLG
14
12
10
8
6
4
2
00 10 20 30 40
E (mJ)
RG (Ω)
VCC = 600 V, IC = 75 A, VGE = ±15 V
EON (TJ =150°C)
EOFF (TJ =25°C)
EON (TJ =25°C)
EOFF (TJ =150°C)
Figure 8. Switching energy vs gate resistance
IGBT191020171351SLG
14
12
10
8
6
4
2
00 10 20 30 40
E (mJ)
RG (Ω)
VCC = 600 V, IC = 75 A, VGE = ±15 V
EON (TJ =150°C)
EOFF (TJ =25°C)
EON (TJ =25°C)
EOFF (TJ =150°C)
Figure 9. IGBT reverse biased safe operating area(RBSOA)
IGBT191020171358OC175
70
60
50
40
30
20
10
00 300 600 900
IC (A)
VCE (V)TJ = 125 °C, VGE = ±15 V, RG = 10 Ω
Figure 10. Diode forward characteristics (terminal)
IGBT191020171401DVF
125
100
75
50
25
00 1 2 3 4
IF (A)
VF (V)
TJ = 150 °C
TJ = 25 °C
Figure 11. Diode reverse recovery energy vs diode currentslope
IGBT191020171402RRE
5.5
4.5
3.5
2.5
1.5
0.5600 1000 1400 1800
Erec (mJ)
di/dt (A/µs)
VCE = 600 V, VGE = ±15 V, IF = 75 A
TJ = 150 °C
TJ = 25 °C
Figure 12. Diode reverse recovery energy vs forwardcurrent
IGBT191020171408RRE
6
5
4
3
2
1
010 30 50 70 90 110 130 150
Erec (mJ)
IF (A)
VCE = 600 V, VGE = ±15 V, RG = 10 Ω
TJ = 150 °C
TJ = 25 °C
A2P75S12M3Electrical characteristics curves
DS11655 - Rev 6 page 7/13
Figure 13. Diode reverse recovery energy vs gateresistance
IGBT191020171410RRE
7
6
5
4
3
2
1
00 10 20 30 40
Erec (mJ)
RG (Ω)
VCE = 600 V, VGE = ±15 V, IF = 75 A
TJ = 150 °C
TJ = 25 °C
Figure 14. IGBT thermal impedance
IGBT191020171416ZTH
10 -1
10 -2
10 -3 10 -2 10 -1 10 0
Zth(°C/W)
t (s)
Zth(typ.)JH
Zth(max.)JC
JC
i 1 2 3 4ri (˚C/W) 0.0306 0.1563 0.0897 0.0518τi (s) 0.0004 0.0112 0.0897 0.4563
JH
i 1 2 3 4ri (˚C/W) 0.0324 0.1591 0.4715 0.2345τi (s) 0.0004 0.0190 0.1303 0.4773
RC - Foster Thermal Network
RC - Foster Thermal Network
Figure 15. Inverter diode thermal impedance
IGBT191020171415MT
10 0
10 -1
10 -2
10 -3 10 -2 10 -1 10 0
Zth(°C/W)
t (s)
Zth(max.)JC
Zth(typ.)JH
JC
i 1 3 2 4ri (˚C/W) 0.0580 0.2865 0.1661 0.0857τi (s) 0.0007 0.0090 0.0585 0.3810
JH
i 1 2 3 4ri (˚C/W) 0.0718 0.2823 0.6107 0.3305τi (s) 0.0009 0.0152 0.1025 0.4110
RC - Foster Thermal Network
RC - Foster Thermal Network
A2P75S12M3Electrical characteristics curves
DS11655 - Rev 6 page 8/13
3 Test circuits
Figure 16. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF
1000µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 17. Gate charge test circuit
AM01505v1
k
k
k
k
k
k
Figure 18. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
TonTr(Ion)
Td(off)
ToffTf
Tr(Voff)
Tcross
90%
10%
Figure 19. Diode reverse recovery waveform
25
A2P75S12M3Test circuits
DS11655 - Rev 6 page 9/13
4 Topology and pin description
Figure 20. Electrical topology and pin description
P
G1 G3 G5
G2 G4 G6
UV
W
EWE’W
EVE’V
EUE’U
T1
T2
Figure 21. Package top view with sixpack pinout
EV
EV
EV
EW
EW
E'W
EU
EU
EU
E'U
EW
E'V
G6
G4
G2 T1 T2
P P P P
G1
G3
G5W
W
W
V
V
V
U
U
U
A2P75S12M3Topology and pin description
DS11655 - Rev 6 page 10/13
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
5.1 ACEPACK™ 2 SIXPACK solder pins package information
Figure 22. ACEPACK™ 2 sixpack solder pins package outline (dimensions are in mm)
56.7±0.3
51±0.15
22.7±0.3
16.4±0.2
4.5±0.1
12±
0.35
15.
5±0.
5
3.2 BSC
1.3±0.2
2.5±0.2
3.2
BSC
62.
8±0.
5
48±
0.3
53±
0.1
42.5
±0.
2
52.7 REF
37 R
EF
A A
Detail A 3.5 REF x 45°
2.3
REF
8.5
0.00
3.20
6.40
9.6012.80
16.00
19.20
22.40
25.60
28.80
32.00
0.00
3.20
19.2
0
22.4
0
25.6
0
28.8
0
32.0
0
44.8
0
48.0
0
EV
EV
EV
EW
EW
E'W
EU
EU
EU
E'U
EW
E'V
G6
G4
G2 T1 T2
P P P P
G1
G3
G5W
W
W
V
V
V
U
U
U
0.64±0.03
8569722_rev4
• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.
A2P75S12M3Package information
DS11655 - Rev 6 page 11/13
Revision history
Table 7. Document revision history
Date Revision Changes
19-May-2016 1 Initial release.
24-May-2016 2Updated Table 5: "Electrical characteristics of the diode".
Minor text changes.
01-Feb-2017 3Added Figure 19: "Package top view with pinout" and Section 2: "Electrical characteristics(curves)".
Minor text changes.
19-Oct-2017 4Updated Section 1: "Electrical ratings", Section 2: "Electrical characteristics curves", andSection 5: "Package information".
Minor text changes.
06-Mar-2018 5
Document status promoted from preliminary data to production data.
Removed maturity status indication from cover page.
Updated features in cover page, Section 1.1 IGBT, Section 1.2 Diode, Section 1.4 Package,Section 2 Electrical characteristics curves and Figure 22. ACEPACK™ 2 sixpack solder pinspackage outline (dimensions are in mm).
Minor text changes.
16-Jan-2019 6Added Figure 6.
Minor text changes.
A2P75S12M3
DS11655 - Rev 6 page 12/13
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A2P75S12M3
DS11655 - Rev 6 page 13/13