Current and Future Challenges for TCAD -...
Transcript of Current and Future Challenges for TCAD -...
![Page 1: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/1.jpg)
Current and Future Challenges for TCAD
C. Jungemann and C. Zimmermann
RWTH Aachen University
MOS-AK 2013
![Page 2: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/2.jpg)
Introduction
![Page 3: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/3.jpg)
IntroductionSome examples for current or future devices
Intel TriGate
Kuhn et al., IEDM2012
Tunnel FET Nanorelay (NEMS)
![Page 4: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/4.jpg)
Introduction
Example: 0.5µm SOI NMOSFET
B
G
S Dn+ n+p
0 0.5 1 1.5 2 2.50
10
20
Drain voltage [V]
Dra
incu
rren
t[A
/m]
DDHD
TCAD simulation without II
Difficult to simulate by classical TCAD (DD, HD)
Until recently could not be accurately simulated
![Page 5: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/5.jpg)
Introduction
Example: 0.5µm SOI NMOSFET
B
G
S Dn+ n+p
0 0.5 1 1.5 2 2.50
10
20
Drain voltage [V]
Dra
incu
rren
t[A
/m]
DDHD
TCAD simulation without II
Difficult to simulate by classical TCAD (DD, HD)
Until recently could not be accurately simulated
![Page 6: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/6.jpg)
Introduction
Example: 0.5µm SOI NMOSFET
B
G
S Dn+ n+p
0 0.5 1 1.5 2 2.50
10
20
Drain voltage [V]
Dra
incu
rren
t[A
/m]
DDHD
TCAD simulation without II
Difficult to simulate by classical TCAD (DD, HD)
Until recently could not be accurately simulated
![Page 7: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/7.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 8: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/8.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 9: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/9.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 10: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/10.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 11: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/11.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 12: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/12.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 13: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/13.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 14: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/14.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 15: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/15.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 16: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/16.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 17: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/17.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 18: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/18.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 19: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/19.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 20: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/20.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 21: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/21.jpg)
IntroductionTCAD becomes more complex and difficult
I Materials (often multi-dimensional configuration space)I SiGeI III-V, II-VI, CNT, graphene, 2D crystalsI Organic semiconductorsI Metal oxide systems, phase change materials
I PhysicsI Electron transportI Quantum effects (bandstructure, scattering, tunneling, size
quantization etc.)I Multi-physics (mechanics, phonons, electromagnetics, chemicals,
interaction with biological matter etc.)I Device types
I FET, BJTI Tunnel FET, 1D devices, spin torque devices etc.I RRAM, MRAM, PCRAM, NEMS, sensors, bio, ....
I New technologies and materials are often proprietary or kept secret
![Page 22: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/22.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 23: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/23.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 24: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/24.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 25: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/25.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 26: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/26.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 27: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/27.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 28: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/28.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 29: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/29.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 30: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/30.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 31: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/31.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 32: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/32.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 33: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/33.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 34: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/34.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 35: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/35.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 36: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/36.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 37: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/37.jpg)
IntroductionSimulation models
I Quantum transport+ Best physics, close to "first principles"- Limited device size and problem complexity- CPU months, only DC
I Boltzmann equation+ Semiclassical physics with lots of quantum mechanics+ Large devices, coupled problems, DC, AC, noise, (HB or transient)- CPU hours, bulk model required
I Drift-diffusion, hydrodynamic model+ Semiconductor equations and multi-physics+ Very large devices or small circuits, coupled problems, DC, AC,
noise, HB, transient, CPU seconds- Transport parameters, limited accuracy
I Compact models+ CPU milliseconds, large circuits, DC, AC, noise, HB, transient- Analytical equations with device parameters, limited physics
![Page 38: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/38.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 39: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/39.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 40: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/40.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 41: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/41.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 42: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/42.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 43: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/43.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 44: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/44.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 45: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/45.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 46: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/46.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 47: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/47.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 48: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/48.jpg)
IntroductionConsistent simulation hierarchy
I Quantum transportI Boltzmann equationI Drift-diffusion modelI Compact models
Speed
Acc
urac
y
Com
plexity
AdvantagesI Lower levels are based on approximations of the upper levels
E.g.: DD is based on the first two moments of the BEI Parameter generation for lower levels (table models or analytical
expressions)⇒ ConsistencyE.g.: Mobility for the DD model by BE bulk simulations
I Higher levels require fewer parameters and are easier to match tobasic experiments
I Benchmark simulations by higher levels to assess accuracy ofapproximations (not measurements)
![Page 49: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/49.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 50: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/50.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 51: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/51.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 52: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/52.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 53: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/53.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 54: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/54.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 55: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/55.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 56: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/56.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 57: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/57.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 58: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/58.jpg)
Simulation hierarchy at ITHE for SiGe devices
I Quantum mechanics for band structure calculations (EPM)I Boltzmann equation solvers
I Full-band Monte Carlo simulator (Elwomis), transientI Spherical harmonics expansion solver (SPRING), DC, AC, noise
I Drift-diffusion and hydrodynamic modelsI Galene III (TU BS), table model, DC, AC, noise, transientI Sdevice (Synopsys), limited table model, DC, AC, noise, transient,
HBI Compact models
I HiCum (TUD) with Aperitif
![Page 59: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/59.jpg)
First example: THz npn SiGe HBT
![Page 60: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/60.jpg)
2D THz SiGe HBT
2D Schematic
I Symmetric structureI Emitter width = 50nmI Spacer = 25nmI Selectively implanted
collector (SIC)
I 148 by 23 grid points
![Page 61: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/61.jpg)
2D THz SiGe HBT
2D Schematic
I Symmetric structureI Emitter width = 50nmI Spacer = 25nmI Selectively implanted
collector (SIC)
I 148 by 23 grid points
![Page 62: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/62.jpg)
2D THz SiGe HBT
1D doping and Ge profiles
I Base thick. = 7nmI Box Ge = 18%
I 5meV, 3rd orderI Galene III for DD/HDI Boltzmann statisticsI No recombinationI No self-heating
![Page 63: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/63.jpg)
2D THz SiGe HBT
1D doping and Ge profiles
I Base thick. = 7nmI Box Ge = 18%
I 5meV, 3rd orderI Galene III for DD/HDI Boltzmann statisticsI No recombinationI No self-heating
![Page 64: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/64.jpg)
2D THz SiGe HBTVCB = 0.1V
Log scale Linear scale
For VBE larger than 0.9V overestimation by DD/HD models
![Page 65: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/65.jpg)
2D THz SiGe HBTVCE = 1.0V
Cutoff frequency
100 101 102
Collector current [mA/µm2]
0.0000
200.00
400.00
600.00
800.00
1000.0
1200.0
Cut
off f
requ
ency
[G
Hz]
DDHDBE
Drift velocity
DD and HD model fail!
![Page 66: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/66.jpg)
2D THz SiGe HBTVCB = 0.1V , BE results
Transit time distribution Extrinsic contributions
Emitter dominates the transit time! Why?
![Page 67: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/67.jpg)
2D THz SiGe HBTVCB = 0.1V
Box and drift Ge profiles
.010 .020 .030 .040
x [µm]
1017
1018
1019
1020
1021
Dopin
g [c
m-3
]
ND
NA
.010 .020 .030 .040
x [µm]
0.00
5.00
10.0
15.0
20.0
25.0
30.0
Ge c
onte
nt [%
]
Drift Ge
Box Ge
Cutoff frequency
101
102
Collector current [mA/µm2]
103
5*102
Cuto
ff fre
quency [G
Hz]
Drift(SHE)
Box(SHE)
Drift(DD)
Box(DD)
Improvement due to bandstructure effects, not drift field!Bandstructure effects not captured by DD or HDOptimization involved three levels of the hierarchy: BE (Spring),TCAD (DD, HD), and compact modeling (HiCum)
![Page 68: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/68.jpg)
2D THz SiGe HBTVCB = 0.1V
Box and drift Ge profiles
.010 .020 .030 .040
x [µm]
1017
1018
1019
1020
1021
Dopin
g [c
m-3
]
ND
NA
.010 .020 .030 .040
x [µm]
0.00
5.00
10.0
15.0
20.0
25.0
30.0
Ge c
onte
nt [%
]
Drift Ge
Box Ge
Cutoff frequency
101
102
Collector current [mA/µm2]
103
5*102
Cuto
ff fre
quency [G
Hz]
Drift(SHE)
Box(SHE)
Drift(DD)
Box(DD)
Improvement due to bandstructure effects, not drift field!Bandstructure effects not captured by DD or HDOptimization involved three levels of the hierarchy: BE (Spring),TCAD (DD, HD), and compact modeling (HiCum)
![Page 69: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/69.jpg)
2D THz SiGe HBTVCB = 0.1V
Box and drift Ge profiles
.010 .020 .030 .040
x [µm]
1017
1018
1019
1020
1021
Dopin
g [c
m-3
]
ND
NA
.010 .020 .030 .040
x [µm]
0.00
5.00
10.0
15.0
20.0
25.0
30.0
Ge c
onte
nt [%
]
Drift Ge
Box Ge
Cutoff frequency
101
102
Collector current [mA/µm2]
103
5*102
Cuto
ff fre
quency [G
Hz]
Drift(SHE)
Box(SHE)
Drift(DD)
Box(DD)
Improvement due to bandstructure effects, not drift field!Bandstructure effects not captured by DD or HDOptimization involved three levels of the hierarchy: BE (Spring),TCAD (DD, HD), and compact modeling (HiCum)
![Page 70: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/70.jpg)
2D THz SiGe HBTVCB = 0.1V
Box and drift Ge profiles
.010 .020 .030 .040
x [µm]
1017
1018
1019
1020
1021
Dopin
g [c
m-3
]
ND
NA
.010 .020 .030 .040
x [µm]
0.00
5.00
10.0
15.0
20.0
25.0
30.0
Ge c
onte
nt [%
]
Drift Ge
Box Ge
Cutoff frequency
101
102
Collector current [mA/µm2]
103
5*102
Cuto
ff fre
quency [G
Hz]
Drift(SHE)
Box(SHE)
Drift(DD)
Box(DD)
Improvement due to bandstructure effects, not drift field!Bandstructure effects not captured by DD or HDOptimization involved three levels of the hierarchy: BE (Spring),TCAD (DD, HD), and compact modeling (HiCum)
![Page 71: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/71.jpg)
2D THz SiGe HBTVBE = 0.84V
Output characteristics with impact ionizationfT ∗ BVCE0 ≈ 1100GHzV
![Page 72: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/72.jpg)
2D THz SiGe HBTVCB = 0.1V
VCB = 0.1V , 100GHz VBE = 0.7V , VCB = 0.1V
Noise characterization
![Page 73: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/73.jpg)
2D THz SiGe HBT
I (At least) three ordersof magnitude slowerthan DD/HD model
I Dependent on SHEorder
I Dependent on the biasI Dependent on the initial
potential
![Page 74: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/74.jpg)
OLED
![Page 75: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/75.jpg)
Schematic Structure of an OLED Device and theOrganic Stack
I HTL: hole transport layerI EL: emission layerI ETL: electron transport layerI LUMO: lowest unoccupied molecule orbitalI HOMO: highest occupied molecule orbital
![Page 76: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/76.jpg)
Composition of Efficient OLED Stacks
N N
N N
N
Ir
N
N
N
N
N N
some common organic materials
I huge number of organic materials with specific functionalityavailable with largely unknown parameters
I complex stacks necessary for efficient devicesI small variations in device structure considerably affect color point,
efficiency, life time
![Page 77: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/77.jpg)
Composition of Efficient OLED Stacks
N N
N N
N
Ir
N
N
N
N
N N
some common organic materials
I huge number of organic materials with specific functionalityavailable with largely unknown parameters
I complex stacks necessary for efficient devicesI small variations in device structure considerably affect color point,
efficiency, life time
![Page 78: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/78.jpg)
Composition of Efficient OLED Stacks
N N
N N
N
Ir
N
N
N
N
N N
some common organic materials
I huge number of organic materials with specific functionalityavailable with largely unknown parameters
I complex stacks necessary for efficient devicesI small variations in device structure considerably affect color point,
efficiency, life time
![Page 79: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/79.jpg)
Composition of Efficient OLED Stacks
N N
N N
N
Ir
N
N
N
N
N N
some common organic materials
I huge number of organic materials with specific functionalityavailable with largely unknown parameters
I complex stacks necessary for efficient devicesI small variations in device structure considerably affect color point,
efficiency, life time
![Page 80: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/80.jpg)
Composition of Efficient OLED Stacks
N N
N N
N
Ir
N
N
N
N
N N
some common organic materials
I huge number of organic materials with specific functionalityavailable with largely unknown parameters
I complex stacks necessary for efficient devicesI small variations in device structure considerably affect color point,
efficiency, life time
![Page 81: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/81.jpg)
Characteristics of Carrier Transport
Very strong mobility dependence on temperature, field and carrierconcentration
![Page 82: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/82.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 83: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/83.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 84: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/84.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 85: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/85.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 86: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/86.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 87: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/87.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 88: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/88.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 89: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/89.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 90: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/90.jpg)
Challenges for Simulation
Model uncertainties:I transition rates: thermally activated tunnelling, non-adiabatic small
polarons, ...I energetic disorder: deviations from Gausian density of states,
correlated or uncorrelated disorderI spatial/configurational disorder: strength and mathematical
description unknownI additional material-specific effects: e.g. trapsI interaction between different organic molecule typesI dipole formation at electrode-organic and organic-organic
interfacesI influence of deposition parameters
![Page 91: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/91.jpg)
Conclusions
![Page 92: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/92.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 93: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/93.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 94: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/94.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 95: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/95.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 96: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/96.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 97: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/97.jpg)
ConclusionsI The full hierarchy of simulation tools is requiredI Hierarchy should be consistentI TCAD becomes more and more complex (e.g. OLED)I Too many choices, TCAD development lags behindI Slow flow of information hinders development
![Page 98: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/98.jpg)
-0.30 -0.20 -0.10 0.000 0.10 0.20 0.30
0.00
0.05
0.10
0.15
0.20
0.25
Silicon
Bottom oxide
GS D
Top oxide
Partially depleted SOI NMOSFET
![Page 99: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/99.jpg)
PDSOI NMOSFET
0 0.2 0.4 0.6 0.8 10
5
10
15
20
25
Drain voltage [V]
Dra
incu
rren
t[A
/m]
with IIw/o II
Kink effect due to impact ionization (II) (Vgate = 1.0V )CPU time: 5h per bias point
![Page 100: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/100.jpg)
PDSOI NMOSFET
0 0.2 0.4 0.6 0.8 10
5
10
15
20
25
Drain voltage [V]
Dra
incu
rren
t[A
/m]
with IIw/o II
Kink effect due to impact ionization (II) (Vgate = 1.0V )CPU time: 5h per bias point
![Page 101: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/101.jpg)
PDSOI NMOSFET
0 0.2 0.4 0.6 0.8 10
5
10
15
20
25
Drain voltage [V]
Cur
rent
[A/m
]ID with IIID w/o II
10−16
10−15
10−14
10−13
10−12
10−11
10−10
II-curr.
About 17 orders of magnitude difference in currents at kink
![Page 102: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/102.jpg)
PDSOI NMOSFET
Ele
ctro
n d
ensi
ty [
/cm
3]
1.0×107
1.0×108
1.0×109
1.0×1010
1.0×1011
1.0×1012
1.0×1013
1.0×1014
1.0×1015
1.0×1016
1.0×1017
1.0×1018
1.0×1019
1.0×1020
Vertical p
osition [u
m]
0
0.1
0.18
Lateral position [um]−0.3 −0.2 −0.1 0 0.1 0.2 0.3
SourceDrain
No problems with stability! (Vgate = Vdrain = 1V )
![Page 103: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/103.jpg)
PDSOI NMOSFET
0.00 .050 0.10 0.15 0.20 0.25 0.30
Lateral position [µm]
200.00
400.00
600.00
800.00
1000.0
1200.0
1400.0
1600.0
Dyn
am
ic t
em
pe
ratu
re
[K]
dyn. temp.
0.00 .050 0.10 0.15 0.20 0.25 0.30
Lateral position [µm]
1011
1013
1015
1017
1019
II g
en
era
tio
n r
ate
[c
m-3
s-1
]
II rate
No spurious particle heating! (Vgate = Vdrain = 1V )
![Page 104: Current and Future Challenges for TCAD - MOS-AKmos-ak.org/munich_2013/presentations/07_Christoph_Jungemann_MO… · Current and Future Challenges for TCAD C. Jungemann and C. Zimmermann](https://reader031.fdocuments.us/reader031/viewer/2022022518/5b0bf7767f8b9a2f788b6d01/html5/thumbnails/104.jpg)
PDSOI NMOSFET
10−1 100 101 102 103 104 105 106
10−22
10−19
10−16
10−13
10−10
Frequency [Hz]
Dra
incu
rren
tnoi
se[A
2 s/c
m] Total
HolesElec.
II
Noise can be calculated for individual sources (Vgate = Vdrain = 1V )