Cht 2907 Apt SMD transistor
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Transcript of Cht 2907 Apt SMD transistor
CHT2907APTCHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Switching Transistor
VOLTAGE 60 Volts CURRENT 0.6 Ampere
APPLICATION
FEATURE* Small surface mounting type. (SOT-23)* High current (Max.=600mA). * Suitable for high packing density.
CONSTRUCTION* PNP Switching Transistor
* Telephony and proferssional communction equipment.* Other switching applications.
2002-7
* Low voltage (Max.=60V) .* High saturation current capability.* Voltage controlled small signal switch.
CIRCUIT
MARKING* 2F-
E
C
B
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − -60 V
VCEO collector-emitter voltage open base − -60 V
VVEBO emitter-base voltage open collector − -5
IC collector current (DC) − -600 mA
ICM peak collector current − -800 mA
IBM peak base current − -200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 350 mW
Tstg storage temperature −65 +150 °CTj junction temperature − 150 °CTamb operating ambient temperature −65 +150 °C
SOT-23
(1)
(2)
(3)
.119
( 3.0
4)
.007
( 0.1
77)
.002
( 0.0
5)
.110
( 2.8
0)
.103 (2.64)
.028 (0.70)
.020 (0.50).055 (1.40).047 (1.20)
.045 (1.15)
.033 (0.85)
.086 (2.20)
.082
( 2.1
0)
.041
( 1.0
5)
.019
( 0.5
0)
.018
( 0.3
0)
.033
( 0.8
5)
.066
( 1.7
0)
(1)
(2)
(3)
Dimensions in inches and (millimeters) SOT-23
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 357 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = -60 V − -10 nA
IEBO
IC = 0; VCB = -60 V; Tj = 125 OC − -10 uA
emitter cut-off current IC = 0; VEB = 5 V − -10 nA
IC = -1.0 mA; VCE = -10V
IC = -10 mA; VCE =- 10V 7550
hFE DC current gain IC = -0.1 mA; VCE = -10V; note 1 35
−−
−IC = -10 mA; VCE = -10V;Ta = -55OC 35 −IC = -150 mA; VCE = -10V 100 300
IC = -150 mA; VCE = -1.0V 50 −IC = -500 mA; VCE = -10V 40 −
VCEsat collector-emitter saturationvoltage
IC = -150 mA; IB = -15 mA − -400 mV
IC = -500 mA; IB = -50 mA − -1.6 V
VBEsat base-emitter saturation voltage IC = -150 mA; IB = -15 mA -0.6 -1.3 V
IC = -500 mA; IB = -50 mA − -2.6 V
Cc collector capacitance IE = ie = 0; VCB = - 5 V; f = 1 MHz − 8
Ce emitter capacitance IC = ic = 0; VBE = -500 mV;f = 1 MHz
− 30 pF
pF
fT transition frequency IC = -20 mA; VCE = - 20 V;f = 100 MHz
200 − MHz
F noise figure IC = 100 µA; VCE = - 5 V; RS = 1 kΩ;f = 1.0 kHz
− 4 dB
Switching times (between 10% and 90% levels);
ton turn-on time ICon = -150 mA; IBon = -15mA;IBoff = −15 mA
− 35 ns
td delay time − 10 ns
tr rise time − 40 ns
toff turn-off time − 100 ns
ts storage time − 80 ns
tf fall time − 30 ns
RATING CHARACTERISTIC CURVES ( CHT2907APT )
RATING CHARACTERISTIC CURVES ( CHT2907APT )
Collector-base capacitance CCB = f (VCB)f = 1MHz
10pF
10 10 V
C
CB
10
5
10
cb
5 5 5-1 0 1 2
10
2
1
100
5
V
Total power dissipation Ptot = f (TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW360
Pto
t
Transition frequency fT = f (IC)VCE = 5V
10MHz
10 10 mA
f
C
10
5
10
T
5 5 5
Ι
0 1 2 3
10
3
2
101
5
Permissible pulse loadPtotmax / PtotDC = f (tp)
10-6
010
5
D =
5
101
5
102
310
10-5 10-4 10-3 10-2 100s
00.0050.010.020.050.10.20.5
totmax
totP DC
P
pt
t p
=DT
t p
T
RATING CHARACTERISTIC CURVES ( CHT2907APT )
Delay time td = f (IC)Rise time tr = f (IC)
10
10 mA
t
C
5r
10
3
2
101
5
10 100 1 2
Ι5 5
nsBEV
td,
= 0 V
3105
td
t r
, = 10 VCCV ,
CC= 20 VBEV V, = 30 V
Saturation voltage IC = f (VBEsat, VCEsat)hFE = 10
10
0 V
BE sat
C
10
3
1
10-1
5
100
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2 1.6
CE satV,
5
102VBEVCE
10-2
Storage time tstg = f (IC)
10
10 mA
t
C
5stg
10
3
2
101
5
10 100 1 2
Ι5 5
ns
FEh = 10
3105
FE = 20h
Fall time tf = f (IC)
10
10 mA
t
C
5f
10
3
2
101
5
10 100 1 2
Ι5 5
ns
FEh = 10
3105
FE = 20h
VCC = 30 V
RATING CHARACTERISTIC CURVES ( CHT2907APT )
DC current gain hFE = f (IC)VCE = 5V
10
10 mA
h
C
10
5FE
10
3
2
101
5
10 10 10-1 0 1 2 3
Ι
-50 OC
25 OC
150 OC
RATING CHARACTERISTIC CURVES ( CHT2907APT )
Test circuits
Delay and rise time
200ohmS
-30
V
Osc.
< 5 nst r
ns200
= 50ohmS< 2ns
Input
r
Zt
0
0-16 V
1 k
50ohmS
Storage and fall time
37ohmS
-6
-300
+15 V
1
k
V
V
< 2 ns= 50ohmS
Input
tZr
0
200 ns
1 k
50ohmS
Osc.
< 5 nst r
Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns