Chirality and energy dependence of first and second order...
Transcript of Chirality and energy dependence of first and second order...
NT06: 7th International Conference on the Science and Application of Nanotubes,
June 18-23, 2006 Nagano, JAPAN
Chirality and energy dependence of firstand second order resonance Raman intensity
R. Saito(Tohoku Univ. CREST JST)J. Jiang, K. Sato, Y. Oyama, J.S. Park, G. S. Chou, G. Samsonidze,
A. Jorio,M. A. Pimenta, A. G. Souza-Filho, G. Dresselhaus, M.S. Dresselhaus
Dept. Physics, Tohoku Universityand CREST JSThttp://flex.phys.tohoku.ac.jp/~rsaito/
e-mail: [email protected]
東北大学TOHOKU UNIVERSITY
Intensity calculation of PL and Raman spectra-- Not all SWNTs are bright. --
Emission wavelength (nm)
Excitation wavelength (nm)
PhotoluminescenceWeisman et al.2002
ELaser(eV)
E22S
E11M
E33S
ωRBM (cm-1)
Resonance RamanFantini et al.2003
Phonon associated PLS. G. Chou et al.2005
Relative Raman intensity(n,m) dependenceRBM,G, D, G’-band
Photoluminescence Intensity(n,m) population analysisphonon associated relaxation processExciton based phenomena
Type dependent PLMaruyama et al.2004
Excitation wavelength(eV)
Emission wavelength (eV)
Pressure dependent RamanA. Souza-Filho et al.2006
2n+m family in SWNTR. Saito et al., Phys. Rev. B, 72, 153413 (2005)
2n+m = const familytype I ‒ type II separation
(example)
(8,0), (7,2), (6,4)
→ 2n+m = 16 type I family
Brillouin zone (BZ)
0 : metal1 : type I SC2 : type II SC
Family
mod (2n+m, 3) =
type I type II
K
K’
SWNT BZ2D graphite BZ
2n+m and n-m family in SWNT
K
type I
K
type II
1 2
1
2
222n+m=19
16
27
24
21
30
17
20
23
2 1=−=+
)3,(mod)3,2(mod
mnmn
E1110741258
n - m=
n - m = 2R. Saito et al., Appl. Phys. Lett.60, 2204 (1992)
ωRBM (cm-1)
ELaser (eV)
•Raman measurement 76 different laser lines(ArKr, HeNe, 3 different dyes, Ti:Sapphire).•Dilor XY triplemonochromator•Calibration: CCl4Raman spectra- Sample from M.Strano
Spectroscopic measurements on Spectroscopic measurements on HiPco Nanotubes in Solution HiPco Nanotubes in Solution (SDS wrapped)(SDS wrapped)
PhotoluminescenceWeisman et al.2002
E22S
Valley of metals E11
ME33
S
Fantini et al. Unpublished
LightLightemissionemission
Electron phonon Electron phonon interactioninteraction
LightLightabsorptionabsorption
Resonance Raman Intensity
AFM Images
• 1st order Raman
• 2nd order Raman
k1
k3
k2
δα
β
γ
k0
k1
k2
α
β
γ
k0
2nd order Raman1st order Raman
RBM: Family pattern of el-phonon matrix elementJ. Jiang et al, Phys. Rev. B 72 235408 (2005)
Type I Type IIdt dependence q dependence
Type I Type II
node node
n - m = 2• n-m family pattern, node
• 1/dt dependence
•Type I > type II
Family pattern for G-band matrix elementJ. Jiang et al, Phys. Rev. B 72 235408 (2005)
G+ (LO) Type I Type IIG-(TO)
Type I
Type IIG+: not sensitive on diameter and q
G-: sensitive both on diameter and q
(G- near armchair)
Z. Yu, L. E. Brus, J. Phys. Chem. B 105, 6831 (2001)
ExpZ
A
Photo-Luminescence (PL)
Emission wavelength (nm)Excitation wavelength (nm)
Optical Process of PL
PL Intensity chirality dep.type I ‒ type II dep.
PL from diffrent (n,m)
DOS
energy
h+
e-
M. J. O’Connel et al., Science 297, 593 (2002)S. M. Bachilo et al., Science 298, 2361 (2002)Y. Miyauchi et al., Chem. Phys. Lett. 387, 198 (2004)
E11
E22
(1) photo absorption
(2) relaxation by phonon
(3) photo emission
Chirality dependence of Photo-LuminescenceA. Gruneis et al, Chem. Phys. Lett. 387, 301 (2004)
S. Maruyama et al, nano-carbon (2004)
PL is strong around Armchair.type I > type II (for E22 absorption)
0.75 1 1.250
10
20
30
Tube diameter (nm)
Chi
ral a
ngle
(deg
.)
9,19,1
8,38,3
6,56,57,57,5
7,67,68,68,6
8,78,7
8,48,49,49,4
9,59,5
7,37,310,510,5
9,29,2 10,210,2
10,310,311,311,3
11,111,1
10,010,0 11,011,0
12,112,1
13,013,0
12,212,2
6,46,49,79,7
10,610,6
13,213,2
12,412,4
9,89,810,810,8
11,611,6
12,512,5 13,513,5
13,313,3
15,115,1
11,411,4
8,18,1
14,014,0
14,114,1
16,016,0
15,2
14,314,3
11,711,7
9,19,1
8,38,3
6,56,57,57,5
7,67,68,68,6
8,78,7
8,48,49,49,4
9,59,5
7,37,310,510,5
9,29,2 10,210,2
10,310,311,311,3
11,111,1
10,010,0 11,011,0
12,112,1
13,013,0
12,212,2
6,46,49,79,7
10,610,6
13,213,2
12,412,4
9,89,810,810,8
11,611,6
12,512,5 13,513,5
13,313,3
15,115,1
11,411,4
8,18,1
14,014,0
14,114,1
16,016,0
15,2
14,314,3
11,711,7
Theory A. Gruneis et al.
Exp. S. Maruyama et al.
S. M. Bachilo et al., JACS, 125 (2003) 11186.
type I type II
A
Z
AZ
Induced absorption Spontaneous emissionphonon emission at E22
PL intensity at E11
quantum efficiency = 3% Evaluation of (n,m) abundance
Fluorescence spectroscopy
HiPCO sample
Y. Miyauchi et al. Chem. Phys. Lett. 387 198 (2004)Y. Oyama et al, Carbon, 44, 873 (2006)
small diameter, near armchairPL intensity large
polarization // tube axis
0.75 1 1.250
10
20
30
Tube diameter (nm)C
hira
l ang
le (d
eg.)
9,19,1
8,38,3
6,56,57,57,5
7,67,68,68,6
8,78,7
8,48,49,49,4
9,59,5
7,37,310,510,5
9,29,2 10,210,2
10,310,311,311,3
11,111,1
10,010,0 11,011,0
12,112,1
13,013,0
12,212,2
6,46,49,79,7
10,610,6
13,213,2
12,412,4
9,89,810,810,8
11,611,6
12,512,5 13,513,5
13,313,3
15,115,1
11,411,4
8,18,1
14,014,0
14,114,1
16,016,0
15,2
14,314,3
11,711,7
9,19,1
8,38,3
6,56,57,57,5
7,67,68,68,6
8,78,7
8,48,49,49,4
9,59,5
7,37,310,510,5
9,29,2 10,210,2
10,310,311,311,3
11,111,1
10,010,0 11,011,0
12,112,1
13,013,0
12,212,2
6,46,49,79,7
10,610,6
13,213,2
12,412,4
9,89,810,810,8
11,611,6
12,512,5 13,513,5
13,313,3
15,115,1
11,411,4
8,18,1
14,014,0
14,114,1
16,016,0
15,2
14,314,3
11,711,7
Theory (Oyama) Exp (Miyauchi)
Population of (n,m) by PL Iexp/Ical Y. Oyama et al, Carbon, 44, 873 (2006)
Population analysis:
1. PL Iexp/IcalY. Oyama et al, Carbon, 44, 873 (2006).
2. I(PL)/I(Raman)A. Jorio et al., APL, 88, 023109, (2006).
3. Iexp/Ical and TEMT. Okazaki, CPL, 420286 (2006)
population analysis
A. Jorio, et al., Appl. Phys. Lett. 88, 023109 (2006).
type I type II
Expe
rimen
tTh
eory
TEM PLfitting withGaussians
pulsed-laser vaporization
CVD
T. Okazaki, et al., Chem. Phys. Lett. 420, 286 (2006).
Summary of PL and Raman intensity
RBM intensity zigzag G+ intensity no chirality dep. G- intensity armchair PL intensity armchair
Type I > Type II (optical absorption)(E22-E11) vs phonon energyresonance width (relaxation time)
Population analysis for Raman and PL is available.
Method: Our computational library for SWNTs-- What do we need for intensity calculation? --
Electron and phonon energy dispersionextended tight binding (ETB, up 20 n.n. sites)Porezag’s interatomic potential
Optical absorption and emissiondipole approximation
Electro-phonon interactionrelaxation, ETB
Raman intensity calculationPL intensity calculationExciton calculation
Exciton calculationWhy?
Large binding energy (0.5eV)even room temperature, exciton exists.
Exciton specific phenomenadark exciton, two photon, environment
What can we know or imagine? Cancellation by self energy
ETB + many body effects reproduce EiiLocalized exciton wave function
enhancement of optical processrelatively short k dependence.
A11 (1s)1- A11 (2p)2+
Wang et al. Science 308, 838 (2005)
ETB extension for Exciton
Bethe-Salpeter Equation
quasi-particle (QP) energy Coulomb interaction (C)
exchange C direct C
Self-energy (Coulomb repulsion)
RPA approximation:
C. D. Spataru et al. PRL 92, 077402 (2004)T. Ando J. Phys. Soc. Japan, 66, 1066 (1997),
)()(*)()(*''
'',,
)''(
)(sCsCsCsC
q usus
ususkv kvvqkvqkkv
sRuRusiqeq
V++
−∑ ∑=Εε
:a static dielectric constant toconsider polarization of environment
Ohno’spotential
G028
Symmetry consideration
:Good quantum number
Centre of mass motion
Relative motion
e h
K
K
K’Γ
A±
C2
e hK Γ
e h
K
K
K’Γ
A symmetry exciton
J. Jiang et al. unpublished
Bright and dark exciton
A- : bright excitonA+, E and E*: dark excitons
Exciton energy dispersion
e
h
K
K
K’
e
h
KK
K’
K’
K
E * exciton
Bright and dark exciton
A- : bright excitonA+, E, E*: dark excitons
J. Jiang et al. unpublished
E exciton
Dispersion for (6,5) NT
Dark state is the lowest
11 11 11 11
A- : bright excitonA+, E and E*: dark excitons
Exciton wavefunction for (8,0) NTs
A111- (1s) A11
2- (2p) A113- (3s)
J. Jiang et al. unpublished
Distribute only one cutting line
for any diameter.
Cutting line spacing
Bright exciton Kataura plotJ. Jiang et al. unpublished
The origin of the large family spread in Kataura plot - single particle part
ESP
Σ
Ebd
Σ−Ebd
Justification of ETB+MB
κ=2 is used for E22(S) and E11(M)
Environment effectJ. Jiang et al. unpublished
Solution Bundle
Experiment data
Circle: Square: :=3.5
=1.75
C. Fanitini et al PRL 93, 147406 (2004)
Ratio problem
With MB Without MB
E33, E44 has similar
Ebd to E11 and E22.
Exciton-photon matrix elementJ. Jiang et al. unpublished.
No type dep, No family pattern but dt dep.
Exciton-phonon matrix elementJ. Jiang et al. unpublished.
Matrix element, No difference!
Intensity enhanced drastically
(M(opt) appears 4 times)RBM
x102
Summary
Solution of BS equationwavefunction on one cutting lineExciton Kataura plot (family pattern)similar Eb E22, E33, E44
exciton-phonon (no change)exciton-phonon (enhanced)Raman and PL intensity with exciton wavefunction (in progress)
Electron-photon and electron-phonon matrix elements-- Dipole approximation and Deformation potential --
A. Gruneis et al, Chem. Phys. Lett. 387, 301 (2004)J. Jiang et al, Chem. Phys. Lett. 392, 383 (2004)
electron-photon (P vector ・ dipole vector)
electron-phonon (A-vib ・ V-deform))(Ψ)(Ψ VC k'kP ∇⋅
c c
Tight binding expansion: anisotropic around K
・
Dipole vector DPolarization vector
Optical aOptical absorption bsorption in graphitein graphiteA. A. GrueneisGrueneis et al. , PRB 67 165402 (2003)et al. , PRB 67 165402 (2003)
R. Saito et al., R. Saito et al., ApplAppl. Phys. A (2004). Phys. A (2004)ΓΓ
K ′
K ′
K ′
K
K
K
Node
SWNT (J. Jiang, 2003)
⎥⎦
⎤⎟⎠⎞
⎜⎝⎛ −+
⎭⎬⎫
⎩⎨⎧
−×⎢⎣
⎡⎟⎠⎞
⎜⎝⎛ −= ′′
2sin
23sin
6cos3
23cos
2coscos
6sin
)(2)( , akakakak
akw
MD yxxy
yz θπθπδδ µµ
kk kk,
kx
kyK
zcvcv DMM ∝=⋅∝ →→ ),1,0,0(, //PDP
vcti
cvife
cI
meiM Ψ∇Ψ⋅= −−
→ P)( ωωω
εωh
)(kzD
anisotropic )1,,0(
||
Tk
TN
k
ππµ
µ
<<−−=
+=
L
22
1 KK
Kk
The (n,m) assignment is based on the family patterns observed in the (ωRBM , Eii) plot
Good agreement with experimental results obtained by PL for semiconducting SWNTs
Extended tight binding method, including curvature effect and many body interactions fit better the experimental results
Only the lower E11M
branch is observed
The Kataura plot for HiPco SWNTs - ResultTight bindingγ0=2.9eVac-c=1.42Å
Experimental results- From the Stokes and anti-Stokes Raman resonance windows
Extended tight binding modelGe.G.Samsonidzeet al. Appl. Phys. Lett. 85, 5703(2004) .
2219
16
27
24
21
30
17
20
23
Exp. Theory
Accuracy: Eii ~ 10meV, ωRBM ~ 0.5cm-1
Atomic Deformation potential vector
6.7eV/A the largest0
3.4eV/A the secondlargest (off site)
0
(on site)
three center integralGraphiteDeformation vector is
parallel to the planeNo Raman for out-of-plane phonon modes
6.7eV/A: the largest m
SWNTDeformation vector has
perpendicular components
Strong Raman for RBM and out-of-plane phonon modes
Curvature effect in electron-phonon interaction
J. Jiang et al, Phys. Rev. B 72 235408 (2005)
terms
(1)-(5): along bond direction(6)-(9): perpendicular to bond direction
Slater-Kosterparameters for electron-phonon matrix element
0 0.5 1 1.5 2 θ/π
0
2
4
6
LOTO
[eV
/A]
0
D (k
, k)
ν
K θ
q=0, D(k,k)→ 1st order Raman
chirality dependence of G-band
Z. Yu, L. E. Brus, J. Phys. Chem. B 105, 6831 (2001)
R. Saito et al, Phys. Rev. B63, 085312 (2001)
Electron-phonon interaction for G-bandJ. Jiang et al. Chem. Phys. Lett. 392, 383 (2004)
Analysis of RBM Raman intensitiesA. Jorio et al, , Phys. Rev. B (2005)
Experiment Calculations
Diameter, chirality and type I vs. type II dependence is observedin good agreement with calculations of Raman intensity
SISII M
Quantum interference effect of RBM Raman intensity
J. Jiang et al, Phys. Rev. 71, 205420 (2005)
M
M
SI SII
Fluorescence from SDSFluorescence from SDS--wrapped nanotubeswrapped nanotubesStructure-Assigned Optical Spectra of Single-Walled Carbon Nanotubes
S. M. Bachilo et al., Science 298, 2361 (2002)
Each peak on the figure represents the observed E22 & E11transitions for one SWNT.
Absorption and Emission
Sample:SDS-wrapped nanotubes
22ex EE = ωh211ex −= EE ωh−= exPL EE CE =ex
11PL EE = 11PL EE =
Electronic transition 2-phonon jump Raman line
Raman lin
e
hot electron emission
hot electron emission
Electronic transition
11PL EE =
resonance condition
Phonon States of Nanotubes Observed in PL
0
400
800
1200
1600LO
oTO
LA
LO
iTA
oTA
oTAoTA
iTAiTA LALA
oTOoTO
LOiTO iTO
Γ Μ Κ Γ
A:LA,TWB:RBMC:oTA(near K)D:oTO(near K)E:oTOF:iTA(near K)G:iLA(near K)H:TO(near K)I: LO
Summary
PL and Resonance Raman intensityMatrix element 1/dt
type I > type II, chirality dependenceRBM near zigzagG+: not dt chirality dependentG-: near armchair
Population analisys of SWNT is established.