Avnet-Israel - RENESAS Electronics New Product …...PAE-AA-12-0177-1 Frequency f(Hz) 10K 20K 50K...

00000-A

Renesas Electronics CorporationAnalog & Power Devices Marketing & Production Planning Division

© 2012 Renesas Electronics Corporation. All rights reserved.

July 2013

RENESAS Electronics RENESAS Electronics RENESAS Electronics RENESAS Electronics

New Product HNew Product HNew Product HNew Product Highlight ighlight ighlight ighlight of Discrete Devicesof Discrete Devicesof Discrete Devicesof Discrete Devices

PAE-AA-12-0177-1PAE-AA-12-0177-1© 2012 Renesas Electronics Corporation. All rights reserved.2

RENESAS Discrete Devices PositionRENESAS Discrete Devices PositionRENESAS Discrete Devices PositionRENESAS Discrete Devices Position


1. A&P Products and Positioning in the Market1. A&P Products and Positioning in the Market1. A&P Products and Positioning in the Market1. A&P Products and Positioning in the Market

ﾞ

PFC improvement IC

SBS IC

Scalable power supply

HDD/ODD/DSC Motor driverﾞ

Automotive analog IC

AFE, LED Driver

Standard SRAM

EEPROM

Low voltage MOSFET

High voltage MOSFET

IGBT + FRD

Triac, Thyristor

Intelligent power device

Diodeﾞ

Transistor

Standerd logic liner IC

Photo-coupler

blue-violet

semiconductor laser

Photo Acceptance IC

RF switch IC

GaAs low-noise FET

Low-noise amp ﾟ

LCD driver for large Diplay

PDP Driver

LCD driver for small displayﾞLCD driver for small displayﾞ

Mixed Signal IC Power Device Display DriverCompound Device

Renesas SP Driver

22

11

11

11

22

33

11

11

22

11

11

11

22

Wider lineup by mergerWider lineup by merger

Consumer MarketConsumer Market Automotive MarketAutomotive Market Communication MarketCommunication Market F.A. MarketF.A. Market

＃： WW Ranking SBS: Smart Battery System、、、、IPD: Intelligent Power Device、、、、LD: Laser Diode

RENESAS CONFIDENTIAL

Low PowerSmallPKG

HighQuality

StableSupply


2222. Renesas Position in Power devices market. Renesas Position in Power devices market. Renesas Position in Power devices market. Renesas Position in Power devices market

Power Devices Ranking(Power Tr. & Thyristor)

（２０１１）

Power Devices Ranking(Power Tr. & Thyristor)

（２０１１）

No.６ in Power Devices

Top share in Low Voltage Power MOSFET

Source：Marketing Eye

TAM

（Oku\）Share Rank

LV-ＭＯＳ 3,809 １５％ 1

HV-ＭＯＳ 1,728 ７％６

ＩＧＢＴ 416 ９％４

Triac・

Thyristor294 １４％３

Market Share for products

（２０１０）

Market Share for products

（２０１０）

Source： IHS iSuppli Competitive Landscaping Tool (CLT)

40 .5%

6 .7%

6 .1%6 .9%

12 .5%

12 .3%

7 .7%

7 .3%

Total Market：１2,886Ｍ＄A Company

B Company

C Company

D Company

E Company

RenesasRenesasRenesasRenesas

G Company


3. Renesas Position in Optocoupler market3. Renesas Position in Optocoupler market3. Renesas Position in Optocoupler market3. Renesas Position in Optocoupler market

2010 （FY）2009

W/W Share 14%(3rd Position in the Market）

Others

T Company

A Company

14%

S Company

Renesas

20%

15% 15%

20%

13%

W/W Share 15%(2nd Position in the Market）

16%

20%

12%

2011

Renesas Renesas

Others Others

W/W Share 16%(2nd Position in the Market）

Ref)： WSTS, Fuji Keizai , iSuppli, NECEL/Resesas Marketing Group

A Company A Company

V Company

L Company

F Company

T Company T Company

V Company V Company

S Company S Company

L Company L Company

F Company F Company


LV products highlightLV products highlightLV products highlightLV products highlight

PAE-AA-12-0177-1PAE-AA-12-0177-1

Fre

quency

ｆ(H

z)

10K

20K

50K

100K

200K

500K

1M

2M

Drain-Source VoltageVDSS(V)10 50 10020

Printer Small MotorInverter

Cellular Phone,PCLi+ Battery

Server(Oring)

For SR*40-100V

WPAK(D)

LFPAK

DrMOS

HVSON

WPAK

HWSON3030

6pWSOF8pVSOF-Slim

NetworkIsolated DC/DC

Primary SW 100V

Micro Converter

Power Tool

LED Back Light

LFPAKHWSON3030

CMFPAK

WPAK

Portable DeviceLoad SW

*SR : Synchronous Rectification

PC・Server・Non-IsolatedDC/DC

mini-POL

6pHUSON2020

HWSON3030 SOP

TO-252 TO-263

TO-262TO-220AB

TO-252 TO-263

TO-262 TO-220ABMiniHV

SOPLGA HVSON

Low Voltage MOSFET Application Map

7


1.1.1.1. DiscreteDiscreteDiscreteDiscrete LVLVLVLV----MOSFET(25V: WINFET2, 30V: BEAM2)MOSFET(25V: WINFET2, 30V: BEAM2)MOSFET(25V: WINFET2, 30V: BEAM2)MOSFET(25V: WINFET2, 30V: BEAM2)WINFET2 performance is better than competitors.This is suitable for High-frequency operation.BEAM2 line-up is our main products.It can reduce switching loss.

2.2.2.2. Integrated devices (MiniIntegrated devices (MiniIntegrated devices (MiniIntegrated devices (Mini----POL)POL)POL)POL)We can suggest not only discrete products but also integrated device

3.3.3.3. New MVNew MVNew MVNew MV----MOSFET(80MOSFET(80MOSFET(80MOSFET(80----100V)100V)100V)100V)80/100V: Ron･Qgd will be reduced 30% (Target)

It can reduce switching loss.

Products highlight

PAE-AA-12-0177-19

Hig

h E

ffici

ency

WINFET(~25V)

12th Gen.

WINFET2(~25V)

14th Gen.

11th Gen.

BEAM (25-30V)

11th Gen.

GaN Device

JET-MV*(40~100V)10th Gen.

JET-MV*(40~100V)10th Gen.

*MV: Middle Voltage

JET (30V)10th Gen.JET (30V)10th Gen.

New-MV (80~100V)

BEAM2(30V)

13th Gen.

BEAM3 (30V)

15th Gen.

<Wafer Process>

ServerNBPC Router

Year

5x6(WPAK)

3x3HWSON3030

3.0x4.6HWSON3046(Dual)

3x3HWSON(Dual)

4x4QFN24

6x6QFN40

Hig

h In

tegr

atio

n

DrMOS*

POL-SiP*

5x6WPAK(Dual)

8x8QFN56

mini-POLCSP

5x5QFN32

～～～～2010 2011 2012 2013 2014 2015

Discrete(Dual)

Discrete(Single)

<Package>

*POL-SiP:Controller + Hi/Lo MOSFETs*DrMOS:Driver + Hi/Lo MOSFETs

PostBEAM

WINFET3(~25V)

CSP (30V)


3x3

’12 Oct.Rev.4.0 PAEDLV Power devices Road Map LV Power devices Road Map LV Power devices Road Map LV Power devices Road Map (High SW Speed)


Feature

Very Low Ron ・・・・Qgd

Very Low Rg

Small PKG : miniHVSON(3x3)

HWSON3030

1. Discrete1. Discrete1. Discrete1. Discrete LVLVLVLV----MOSFET MOSFET MOSFET MOSFET WINFET2 for HiWINFET2 for HiWINFET2 for HiWINFET2 for Hi----sidesidesideside

WINFET2 : Low Ron ・・・・Qgd ,Low Rg Reducing switching loss

typ. max. typ. max.

1 RJK0234DNS miniHVSON 25 +12/-8 35 (4.8) (5.8) 5.4 6.8 1.4 0.6 OK '13/Feb

2 RJK0243DNS HWSON3030 25 +12/-8 25 (7.5) (9.0) 8.4 10.5 1.0 0.5 OK '12/Dec

No Type No. VGS=8V

RDS(on) (mΩ)

VGS=4.5V

Max. ratings

VDSS(V)

ID(A)

Package VGSS(V)

Qgd(nC)

Rg(Ω) MPES

Schedule

WINFET2 Line-up

Mini-HVSON(Cu clip bonding)

3.3 x 3.3 x 0.9 mm

HWSON3030-8(Al ribbon bonding)3.3 x 3.3 x 0.8 mm

PAE-AA-12-0177-1PAE-AA-12-0177-1

© 2012 Renesas Electronics Corporation. All rights reserved.11

typ. max. typ. max.

1 RJK0226DNS 25 +12/-12 40 (2.3) (2.8) 2.7 3.4 4300 2.6 OK OK W/ SBD

NoteRg(Ω) MPES

Schedule

VGSS(V)

Ciss(pF)

No Type No.VGS=10V

(8V)

RDS(on) (mΩ)

VGS=4.5V

Max. ratings

VDSS(V)

ID(A)

DiscreteDiscreteDiscreteDiscrete LVLVLVLV----MOSFET MOSFET MOSFET MOSFET Beam Series for LoBeam Series for LoBeam Series for LoBeam Series for Lo----sidesidesideside

typ. max. typ. max.

1 RJK03N8DNS 30 (4.6) (5.5) 5.1 6.4 2950 1.5 OK OK W/ SBD

2 RJK03N9DNS 25 (5.7) (6.9) 6.5 8.2 2180 1.8 OK OK W/ SBD

3 RJK03L2DNS 30 4.2 5.1 5.2 7.0 2110 1.5 OK OK W/ SBD

4 RJK03L3DNS 25 5.3 6.4 6.7 8.7 1550 1.7 OK OK W/ SBD

5 RJK0240DNS 25 +20/-20 30 3.6 4.6 4.5 6.1 1850 1.5 OK OK W/ SBD

+12/-12

30

+20/-20

VGS=4.5VES MP

RDS(on) (mΩ)VDSS

(V)VGSS

(V)ID(A)

VGS=10V(8V)Schedule

No Type No.Max. ratings

NoteCiss(pF)

Rg(Ω)

BEAM+SBD Series

BEAM2+SBD Series

11 © 2012 Renesas Electronics Corporation. All rights reserved.


60

65

70

75

80

85

90

95

0 5 10 15 20Iout (A)

Effi

cien

cy (

%)

60

65

70

75

80

85

90

95

0 5 10 15 20Iout (A)

Effi

cien

cy (

%)

< Test Conditions >Ta=25,No Air Flow, VDR=5V Vout=1.8V,L=0.21uH(DCR=0.32mohm) Renesas EVB, 1PhaseDriver: ISL6609

Comparison Efficiency and Lossby operation frequency

<fsw=800kHz>

Peak eff.=94.3%

<fsw=1MHz>

Vin=8.4V

Vin=12.6V

Peak eff.=93.9%（（（（Demand efficiency : >92%)

Vin=8.4V

Vin=12.6V

P/N VDSS [email protected] typ Ciss Coss Crss RgHi RJK0234DNSHi RJK0234DNSHi RJK0234DNSHi RJK0234DNS 25V25V25V25V 5.4mohm5.4mohm5.4mohm5.4mohm 1050pF1050pF1050pF1050pF 880pF880pF880pF880pF 66pF66pF66pF66pF 0.6ohm0.6ohm0.6ohm0.6ohmLo RJK0240DNSLo RJK0240DNSLo RJK0240DNSLo RJK0240DNS 25V25V25V25V 4.5mohm4.5mohm4.5mohm4.5mohm 1850pF1850pF1850pF1850pF 380pF380pF380pF380pF 210pF210pF210pF210pF 1.5ohm1.5ohm1.5ohm1.5ohm


84

85

86

87

88

89

90

91

0 5 10 15 20Iout (A)

Effi

cien

cy (

%)

RJK0234DNSx1+RJK0240DNSx1BSZ036NE2LSx1+RJK0240DNSx1CSD16323Q3x1+RJK0240DNSx1

25

30

35

40

45

50

55

0 5 10 15 20Iout (A)

Hi-s

ide

PK

G S

urfa

ce T

emp.

(de

g) RJK0234DNSx1+RJK0240DNSx1BSZ036NE2LSx1+RJK0240DNSx1CSD16323Q3x1+RJK0240DNSx1

Efficiency of WINFET2 is the best performance when the test condition is same.

Conditions:fsw=600kHz, Vin=10V, Vout=1.2V, Vdrv=6.5VLout= 0.21uH, Driver IC ：：：：ISL6615CB

WINFET2

WINFET2

WINFET 2 Efficiency comparison (vs, competitor)

Type　　　　Name VDSS Ron 4.5V Qgd RgRJK0234DNS

(WINFET2)25V 5.4m ｔｙｔｙｔｙｔｙp 1.4nC 0.6ohm

T Company 25V 4.4m typ 1.1nC 1.4ohm I Company 25V 4.1m typ 1.9nC 0.9ohm

I companyT company

I companyT company

PAE-AA-12-0177-1PAE-AA-12-0177-1

WPAK 5 x 6mm for Hi-Side SWfor Lo-Side SW & Synchronous rectification

The development plan of this series may be changed without notice.

3.3x3.3mm Package （（（（HWSON3030-8）））） 3.3

3.3

mm

typ. max. typ. max.1 RJK03M0DPA 65 50 1.6 1.9 1.9 2.5 33.0 8.5 1.20 OK OK2 RJK03M1DPA 50 45 1.9 2.3 2.4 3.1 25.0 7.1 1.50 OK OK3 RJK03M2DPA 45 40 2.3 2.8 2.8 3.7 21.2 6.3 1.40 OK OK4 RJK03M3DPA 40 35 3.2 3.9 3.9 5.1 15.7 4.5 1.85 OK OK5 RJK03M4DPA 35 30 3.8 4.6 4.7 6.1 12.0 3.3 2.00 OK OK6 RJK03M5DPA 30 30 5.4 6.5 6.6 8.6 10.4 3.1 1.40 OK OK7 RJK03M6DPA 30 25 7.8 9.4 9.7 12.6 7.1 2.0 1.55 OK OK8 RJK03M7DPA 30 25 8.0 9.6 10.0 13.0 6.6 2.1 3.40 OK OK

30 +20/-20

Qgd(nC)VGSS

(V)

Max. ratingsVDSS

(V)ID(A)

Pch(W)

Qg(nC)

No Type No. VGS=10VRDS(on) (mΩ)

VGS=4.5VMPES

ScheduleRg(Ω)

typ. max. typ. max.1 RJK03M8DNS 30 20 4.3 5.2 5.1 6.7 14.5 4.5 1.50 OK OK2 RJK03M5DNS 25 15 5.2 6.3 6.4 8.4 10.4 3.1 1.40 OK OK3 RJK03M6DNS 16 12.5 7.6 9.2 9.5 12.4 7.1 2.0 1.55 OK OK4 RJK03M9DNS 14 10 9.2 11.1 11.5 15.0 5.6 1.8 1.50 OK OK

30 +20/-20

ScheduleVDSS

(V)VGSS

(V)ID(A)

Pch(W)

VGS=10V VGS=4.5VES MP

RDS(on) (mΩ)Qg

(nC)Qgd(nC)

Rg(Ω)


DiscreteDiscreteDiscreteDiscrete LVLVLVLV----MOSFET Line Up MOSFET Line Up MOSFET Line Up MOSFET Line Up BEAM2 seriesBEAM2 seriesBEAM2 seriesBEAM2 series


PAE-AA-12-0177-1PAE-AA-12-0177-1

WPAK 5 x 6mm

BEAM2+SBD series

The development plan of this series may be changed without notice.

3.3x3.3mm Package （（（（HWSON3030-8）））） 3.3

3.3

mm

typ. max. typ. max.1 RJK03N0DPA 45 45 (2.0) (2.4) 2.3 2.9 42.0 12.4 1.50 OK OK2 RJK03N1DPA 45 40 (2.5) (3.0) 2.9 3.7 31.5 8.3 1.50 OK OK3 RJK03N2DPA 40 35 (3.3) (4.0) 3.8 4.8 27.2 7.8 2.10 OK OK4 RJK03N3DPA 35 35 (3.9) (4.7) 4.5 5.7 22.3 6.3 2.00 OK OK5 RJK03N4DPA 45 45 2.0 2.4 2.4 3.2 29.4 10.0 1.50 OK OK6 RJK03N5DPA 45 40 2.4 2.9 3.0 3.9 23.0 7.5 1.50 OK OK7 RJK03N6DPA 40 35 3.1 3.8 4.0 5.2 19.0 6.0 2.10 OK OK8 RJK03N7DPA 35 35 3.6 4.4 4.8 6.3 15.6 5.6 2.00 OK OK

ID(A)

Pch(W)

VGS=10V(8V) VGS=4.5VQgd(nC)

Rg(Ω)

Schedule

ES MPQg

(nC)No Type No.

Max. ratings RDS(on) (m Ω)VDSS

(V)VGSS

(V)

30

+12/-12

+20/-20

typ. max. typ. max.1 RJK03N8DNS 30 20 (4.6) (5.5) 5.1 6.4 23.6 5.8 1.50 OK OK2 RJK03N9DNS 25 15 (5.7) (6.9) 6.5 8.2 16.7 4.7 1.80 OK OK3 RJK03L2DNS 30 20 4.2 5.1 5.2 6.8 17.0 6.0 1.50 OK OK4 RJK03L3DNS 25 15 5.3 6.4 6.7 8.7 12.3 3.7 1.70 OK OK

30+12/-12

+20/-20

ScheduleVDSS

(V)VGSS

(V)ID(A)

Pch(W)

VGS=10V(8V) VGS=4.5VES MP

RDS(on) (mΩ)Qg

(nC)Qgd(nC)

Rg(Ω)



PAE-AA-12-0177-1PAE-AA-12-0177-1

WPAK(Dual)

BEAM2+SBD WPAK Dual (5.1 x 6.1 mm) series

typ. max. typ. max.

High +20/-20 20 15 5.8 7.0 8.4 10.9 7.7 2.0 1.0

Low +12/-12 50 35 (1.5) (1.9) 1.7 2.2 45.0 12.0 1.0

High 15 10 7.8 9.4 9.7 12.6 7.1 2.0 1.55

Low 30 20 4.4 5.3 5.4 7.0 16.5 5.5 1.5

High 15 10 7.8 9.4 9.7 12.6 7.1 2.0 1.55

Low 45 30 2.0 2.4 2.4 3.2 29.4 10.0 1.5

High 20 15 5.8 7.0 8.4 10.9 7.7 2.0 1.0

Low 50 35 1.7 2.1 2.1 2.7 35.9 12.4 1.4

High +20/-20 20 15 5.8 7.0 8.4 10.9 7.7 2.0 1.0

Low +12/-12 50 35 (1.9) (2.3) 2.1 2.8 45.0 12.0 1.0

+20/-20 OK OK4 RJK03P9DPA 30

RJK0230DPA 25

+20/-20

RJK03P7DPA 30 +20/-20

VGS=10V(8V)RDS(on) (mΩ)

OK

ES MP

OK

OK

OK OK

Schedule

OK

Qg(nC)

Type No. VGSS(V)

FET VDSS(V)

Max. ratings

ID(A)

Qgd(nC)

Rg(Ω)

3 RJK03P6DPA 30

No VGS=4.5VPch(W)

2

1

OK OK5 RJK03R4DPA 30

New


SBD: Schottky Barrier Diode

PAE-AA-12-0177-1PAE-AA-12-0177-1

2003

DrMOS initial Spec.1.0(8x8 QFN)

2004

DrMOS Spec. 1.0

2007

DrMOS Spec. 3.0(6x6 QFN)

2004R2J20601NP(1st Generation)

2006R2J20602NP(2nd Generation)

2007R2J20604NP(PWM 3.3V)

2009R2J20605NP (8 x 8 mm)R2J20651NP(6 x 6 mm)

2010R2J20652ANPR2J20653ANP(6 x 6 mm)

DrMOS Spec. 4.0(6x6 QFN)

2010-2011R2J20654NPR2J20655NPR2J20656ANPR2J20657NPR2J20658NP …(6 x 6 mm)

IntelVR11.x

IntelVR12

DrMOS

IntelVR12.5/12.62010

2007

R2J20701NP(8 x 8 mm)POL-SiP (Point of Load- System in Package)

2009

R2J20702NP(8 x 8 mm)

(= Integrated Driver-MOSFET)

2012RAJ2066x(6 x 6 mm)

For 2013 Model …For 2013 Model …For 2013 Model …For 2013 Model …

2012

RAJ207xx

Higher Performance Lower Cost, High Freq.

Underdevelopment

Mini SizeSimple function

mini-POL(WLCSP)

2012

RAA20770/771/772/773

2010

R2J20751NP(6 x 6 mm)

’12 Aug.Rev.3 PAEDIntegrated LV Power devices Road Map Integrated LV Power devices Road Map Integrated LV Power devices Road Map Integrated LV Power devices Road Map (High SW Speed)


PAE-AA-12-0177-1PAE-AA-12-0177-1

High-side MOSFET

QFN PKG

DriverP

WM

Controller

(Multi-phase)

Driver

Gate Driver

DrMOS ：：：：DriverHi-/Low MOSFETs

High-side MOSFET

Driver

PW

M

Driver

Low-side MOSFET

Gate Driver

POL-SiP/mini-POL ：：：：ControllerDriverHi-/Low MOSFETs

PWMController

PW

M

Low-side MOSFET

DrMOS needs external PWM IC POL-SiP/mini-POLincludes PWM controller inside

2. Integrated devices (DrMOS, Mini2. Integrated devices (DrMOS, Mini2. Integrated devices (DrMOS, Mini2. Integrated devices (DrMOS, Mini----POL)POL)POL)POL)


PAE-AA-12-0177-1PAE-AA-12-0177-1

6x6mm QFN40 with an extensive Line-up

R2J20651NP

PWM Input

Status

ES MP

35AR2J20652ANP

16V

27VR2J20653ANP

R2J20651ANP

VinMax

IoutMax

130C

115C

Reg5V

R2J20654NP 115C

R2J20655BNP

115C

115C

20V 40A

5V

5V

5V &3.3V

5V

150C

150C

150C

150C

R2J20657NP

DiodeEmulation

LSDBL#(SMOD)

5V & 3.3V

115C

150C

35A

R2J20658NP 115C 150C

R2J20657BNP

R2J20658BNP

R2J20655NP

5V

5V & 3.3V

5V

5V & 3.3V

5V

27V

5V & 3.3V

5V

R2J20656ANP

NEW

NEW

NEW

ThermalWarning

ThermalShutdown

PWMMid-Voltage

PWMMid-Voltage

PWMMid-Voltage

6x6mmIntegrated devices (DrMOS)Integrated devices (DrMOS)Integrated devices (DrMOS)Integrated devices (DrMOS)


PAE-AA-12-0177-1PAE-AA-12-0177-120

VinMax

IoutMax

PWM Control OSC.

SYNC

PeakCurrentMode

16VR2J20702NP 40A

PWM ICSupply Voltage

5V & 12V

POL-SiP: PWM Control IC & MOSFETs

Up to 1MHz

TRK-SS OCP OVP

Pre-OVP

Power Good

Ref.Control

Phase#Control

Function Status

ES MP

Hiccup

VinMax

IoutMax

PWM Control OSC.

SYNC

PeakCurrentMode

27VR2J20751NP

PWM ICSupply Voltage

5V 25AUp to 1MHz

TRK-SS OCP OVP

Pre-OVP

Power Good

Ref.Control

Phase#Control

Function Status

ES MP

Hiccup

125%

90%

- - - - -

POL-SiP Line-up

8x8mm QFN56 / POL-SiP

6x6mm QFN40 / POL-SiP



Integrated devices (MiniIntegrated devices (MiniIntegrated devices (MiniIntegrated devices (Mini----POL)POL)POL)POL)

mini-POL picture

Bottom view

RAA207700GBM RAA207701GBM RAA207702GBM

-Integrated controller, High/Low power MOSFET on a single chip-Very small Chip Size Package (CSP), High Efficienc y, High power density-Focusing on light load efficiency for long battery life-Support for wide input range (3.0-16V)-Three different Iout capacity for various applicat ion

Feature


Mini-POL Line-up and Function

Function

Item Function Operation

SS Soft Start Soft start ramp period is adjustable by external capacitor selection.

ON/OFF Operation Enable Operation stop when the ON/OFF pin is asserted Low signal.

PGOOD Power Good indicator When FB voltage reach 90% of reference voltage, PGOOD pin becomes high impedance.

OCP Over Current Protection

（Hiccup mode）

When high-side MOSFET drain-source current exceeds fixed level eight times, IC starts hiccup

operation.

OVP Over Voltage Protection

（latch typ）

When FB voltage exceeds 125% of reference voltage, switching stops immediately and latched

Low-side MOSFET on state in order to pull the output voltage.

TSD Thermal Shut Down When junction temperature exceeds 150 degC, switching stop.

ZCD Zero Cross Detector In light load condition, Low-side MOSFET on time is decided by inductor zero current.

Line SW Driver Line Switch Driver The line switch driver can drive external MOSFET with low power consumption.

Reg5V Internal ５V LDO Internal 5V LDO for single power supply operation. (Only RAA207703GBM)

Line SW Dr. Int. Reg5V WS ES MP1 RAA207700GBM 2.7x3.9mm 3 - 16V 15A Dec/'12 CY1Q/'13 CY2Q/'132 RAA207703GBM 2.7x3.9mm 3 - 16V 15A Dec/'12 CY1Q/'13 CY2Q/'133 RAA207701GBM 2.7x3.4mm 3 - 16V 10A OK OK CY1Q/'134 RAA207704GBM 2.7x3.4mm 3 - 16V 10A Nov./'12 Jan./'13 CY1Q/'135 RAA207702GBM 2.7x2.4mm 3 - 16V 5A OK Dec./'12 CY1Q/'136 RAA207705GBM 2.7x2.4mm 3 - 16V 5A OK Dec./'12 CY1Q/'13

ScheduleSizeType No.

FunctionNo. Iout

maxVin

Range

Line-up

PAE-AA-12-0177-1PAE-AA-12-0177-123

LFPAK

Low Qg JET -MV (LFPAK) series Line-up-Main Application : DC-DC Power Supply and Motor Dri ve,

Battery Power Management etc.

-Feature : Low Qg & Qgd ( Low Switching loss ) High Threshold Voltage ( High noise immunity )

VGS(off) Qg Qgd

VDSS VGSS ID Pch [V] [nC] [nC] ES MP

[V] [V] [A] [W] min-max Typ Max

1 RJK0454DPB 40 55 2.0 - 4.0 3.9 4.9 25 3.0 0.5 OK OK

2 RJK0455DPB 45 60 2.0 - 4.0 3.1 3.8 34 4.5 0.5 OK OK

3 RJK0456DPB 50 65 2.0 - 4.0 2.6 3.2 39 6.0 0.5 OK OK

4 RJK0654DPB 30 55 2.0 - 4.0 6.5 8.3 27 4.5 0.5 OK OK

5 RJK0655DPB 35 60 2.0 - 4.0 5.3 6.7 35 6.5 0.5 OK OK

6 RJK0656DPB 40 65 2.0 - 4.0 4.5 5.6 40 7.0 0.5 OK OK

7 RJK0854DPB 25 55 2.0 - 4.0 10 13 27 4.5 0.5 OK OK

8 RJK0855DPB 30 60 2.0 - 4.0 8.2 11 35 6.5 0.5 OK OK

9 RJK0856DPB 35 65 2.0 - 4.0 6.9 8.9 40 7.0 0.5 OK OK

10 RJK1054DPB 20 55 2.0 - 4.0 17 22 27 4.5 0.5 OK OK

11 RJK1055DPB 23 60 2.0 - 4.0 13 17 35 7.0 0.5 OK OK

12 RJK1056DPB 25 65 2.0 - 4.0 11 14 41 7.5 0.5 OK OK

Rg(Ω)

Schedule

+20/-20

100

80

60

40

VGS=10V

RDS(on) [mΩ]Max. ratings

VGS=10V

Type No.No.



-Main Application : DC-DC Power Supply-Feature : Low voltage Gate Drive (Capable Logic le vel Drive)

Low V DR* JET-MV (LFPAK) series Line-up

VGS(off)VDSS VGSS ID Pch [V]

[V] [V] [A] [W] min-max Typ Max Typ Max

1 RJK0451DPB 35 45 1.2 - 2.5 5.5 7.0 7.0 9.6 32 3.0 0.7 OK OK

2 RJK0452DPB 45 55 1.2 - 2.5 2.8 3.5 3.5 4.7 58 6.6 0.4 OK OK

3 RJK0453DPB 55 65 1.2 - 2.5 1.9 2.3 2.4 3.2 90 9.0 0.5 OK OK

4 RJK0651DPB 25 45 1.2 - 2.5 11 14 13 18 32 3.7 0.7 OK OK

5 RJK0652DPB 35 55 1.2 - 2.5 5.5 7.0 6.5 9.0 63 8.8 0.4 OK OK

6 RJK0653DPB 45 65 1.2 - 2.5 3.8 4.8 4.5 6.1 87 11.8 0.5 OK OK

7 RJK0851DPB 20 45 1.2 - 2.5 18 23 20 28 29 3.6 0.7 OK OK

8 RJK0852DPB 30 55 1.2 - 2.5 9.0 12 10 14 60 7.6 0.4 OK OK

9 RJK0853DPB 40 65 1.2 - 2.5 6.2 8.0 6.7 9.2 88 11.0 0.5 OK OK

10 RJK1051DPB 15 45 1.2 - 2.5 30 39 33 46 31 4.6 0.7 OK OK

11 RJK1052DPB 20 55 1.2 - 2.5 15 20 16 22 60 9.2 0.4 OK OK

12 RJK1053DPB 25 65 1.2 - 2.5 10 13 11 15 93 12.5 0.5 OK OK

No.ES

+20/-20

40

60

80

100

Qgd[nC]

Qg[nC]Type No.

Max. ratingsVGS=4.5VVGS=10V

RDS(on) [mΩ]Rg(Ω)

Schedule

VGS=10VMP

This products are for the low voltage drive (<10V).If the driving voltage is over 10 V under normal co nditions, please use the products for Low Qg JET-MV series which characteris tics has been improved.

*VDR : Gate drive voltage

LFPAK


WPAKVGS(off) Qg Qgd

VDSS VGSS ID Pch [V] [nC] [nC] ES MP

[V] [V] [A] [W] min-max Typ Max

1 RJK0657DPA 20 45 2.0 - 4.0 11.0 13.6 16 3.0 2.1 OK OK

2 RJK0658DPA 25 50 2.0 - 4.0 9.0 11.1 19 3.2 2.7 OK OK

3 RJK0659DPA 30 55 2.0 - 4.0 6.5 8.0 31 5.1 1.3 OK OK

4 RJK0660DPA 40 65 2.0 - 4.0 4.2 5.1 45 7.5 1.1 OK OK

Rg(Ω)

Schedule

.+20/-20

VGS=10V

RDS(on) [mΩ]

VGS=10V

60

Max. ratings

Type No.No.

-Main Application : DC-DC Power Supply and Motor Dri ve,Battery Power Management etc.

-Feature : Low Qg & Qgd ( Low Switching loss ) High Threshold Voltage ( High noise immunity )

Low Qg JET -MV (WPAK) series Line-up

PAE-AA-12-0177-1PAE-AA-12-0177-1

WPAK

PKG P/NVDSS(V)

ID [A]RDS(on) Max.[Ω]

Ciss Typ.[pF]

WS MP note

WPAK HAT2185WP 150 10 0.19 430 - OK -

HAT2299WP 150 14 0.11 710 - OK -

HAT2183WP 150 20 0.064 1,200 - OK -

RJK1575DPA 25 0.048 2,200 OK 1Q ’13 -

RJK1576DPA 25 0.058 1,200 - OK -

HAT2189WP 200 8.5 0.27 430 - OK -

HAT2188WP 200 12 0.157 710 - OK -

HAT2287WP 200 17 0.094 1,200 - OK -

HAT2187WP 200 17 0.094 1,200 - OK -

HAT2184WP 200 14 0.11 710 - OK -

RJK2075DPA 20 0.069 2,200 - OK -

RJK2076DPA 20 0.085 1,200 OK 1Q ‘13 -

HAT2193WP 250 7 0.4 430 - OK -

HAT2192WP 250 10 0.23 710 - OK -

HAT2191WP 250 14 0.138 1,200 - OK -

RJK2575DPA 17 0.104 2,200 OK 1Q ’13 -

RJK2576DPA 17 0.128 1,200 OK 1Q ‘13 -

Power MOSFET for Isolated DC/DC Lineup

NEW

NEW

NEW

NEW

NEW

NEW


PAE-AA-12-0177-1PAE-AA-12-0177-1© 2013 Renesas Electronics Europe. All rights reserved.

Packages

27

PAE-AA-12-0177-1PAE-AA-12-0177-1© 2013 Renesas Electronics Europe. All rights reserved.

~1.1mohm

0.3~0.7mOhm

Au wire

Die

Lead Frame(Source,Gate)

Au Wire

Die pad(Drain)

AL ribbon

lead(Source,Gate) Die

Die pad(Drain) Au bump

LFPAKLFPAK-i

Package technology for reduced resistance

Low PKG resistance -> Reduction of Conduction loss !

Die pad(Drain)

Die

AL ribbon

Wireless

Cu clip

Die pad(Drain)

Die

Cu clip

SOP-8WPAKWPAK-DualHWSON3046HWSON3030

HVSONmini-HVSON

SOP-8

Cu wire

Die

Lead Frame(Source,Gate)

Cu Wire

Die pad(Drain)

28


Power MOSFET in Automotive grade highlightPower MOSFET in Automotive grade highlightPower MOSFET in Automotive grade highlightPower MOSFET in Automotive grade highlight

PAE-AA-12-0177-1PAE-AA-12-0177-1

Total Automotive Solution

IGBT, Power MOS, AFE

Analog & Power Solutions for Automotive by RENESAS

Networking

CAN

LIN

FlexRay

SAFE-by-WIRE

MOST

Bluetooth

Power MOS

Airbag

TPMS

Safety Cont.

Power MOSDriver

Safety ADAS

Collision Warning

Parking Assistant

Back monitor

Night vision

Body & Security

Power Door

Power Window

Air Conditioning

Mirror, Wiper

Lighting

IPD, Power MOS, LED Driver

Dashboard

Car Audio

Connectivity Audio

Car Navigation

Entertainment

ITS/ GPS

InfotainmentSteering /EPS

Brake/ABS

Suspensions

Chassis Control

Chassis

Engine Control

HEV/EV Motor

AT Control

Transmission

Power Train

© 2013 Renesas Electronics Europe. All rights reserved.30

PAE-AA-12-0177-1PAE-AA-12-0177-1

Overview of Automotive Power Devices


PAE-AA-12-0177-1PAE-AA-12-0177-1

Renesas Power Devices - covering all Automotive applications

Renesas PowerMOSFET, IPD, IGBT providing High Performance and High Reliability Power Solutions

Renesas PowerMOSFET, IPD, IGBT providing High Performance and High Reliability Power Solutions

100 600 120040060401

10

100

100 600 120040060401

10

100

Drain to Source voltage (V)

IPDIPD

Power MOSFETPower MOSFET

IGBTIGBT

HEV, EV

Body controlJunction box(lights etc.)

EPS, ABS Starter Generator

Window Lifter, Door mirror

100 600 120040060401

10

100

Engine, HID

Cooling fan, Water Pump, HVAC, Wiper

HID: High Intensity Discharge lamp


PAE-AA-12-0177-1PAE-AA-12-0177-1

Source：Strategic Analytics April 2013

Automotive Power Device Position

Automotive Power Market is expected to grow steadily. Renesas is ranked as #4 (CY12) in this market.

Automotive Power Market (MUS$)

PAE-AA-12-0177-1PAE-AA-12-0177-1

RENESAS Position in Power Device Market


Automotive MOSFETNo1. W/W

23% share

RENESAS

23,3%

I

15,9%

T

9,9%

V

9,5%

I

8,6%

O

8,3%

F

6,2%

S

5,1%

4,2%

Others

8,7%

Source: Marketing Eyes, 2012 Result

PAE-AA-12-0177-1PAE-AA-12-0177-1

PowerMOSFET Hotheads for Automotive

Super Low RDS(on)

AEC-Q101 and RoHS compliant

N-Channel products with 30V – 100V

P-Channel products with -30V – -60V

SMD and THD available

NP - Series

Outstanding Reliability


Bare Die support

PAE-AA-12-0177-1PAE-AA-12-0177-1

FY’07 ‘‘‘‘09 ‘‘‘‘10 ‘‘‘‘11 ‘‘‘‘12‘08

Fie

ld f

ailu

re r

ate

Field failure rate trends

40ppb

30ppb

39ppb

20ppbTarget<10ppb

300M

200M

400M

Nu

mb

er o

f sh

ipm

en

ts

(p

cs p

er y

ear)

Renesas Automotive PowerMOSFETs providing outstanding quality results in the market

19ppb

Number of shipments


PAE-AA-12-0177-1PAE-AA-12-0177-1

Process trend Towards higher efficiency


PAE-AA-12-0177-1PAE-AA-12-0177-1

PowerMOSFET Process Road Map

2009 2011 2013 2015

Gen8UMOS4

30~60V 40~60V

Norm

alized O

n R

eis

suance

-30 ~ -60V

Nch

Pch

1.0

2.0

0.8

0.540~60V

RDS,on reduced

Qg reduced

ANL2

Gen8UMOS4

SJ1ANL1

30~60V

Process name :

ANL1Serial No.Low voltagePolarity (N/P)for automotive

NEWNEW

ANL3Under development

RDS,on reduced

NEWNEW

APL1

-40 ~ -60V

NEWNEW

APL2Under planning

NEWNEW

(Gen9)

RDS,on Reduction by optimized Trench Structures


PAE-AA-12-0177-1PAE-AA-12-0177-1

ANL2 (1.6µm)UMOS4 (1.92µm)

n

+

n

-

P

N+

P

N-

P

n

+

n

-

P

N+

P

N-

P

n

+

n

-

P

N+

P

N-

P

n

+

n

-

P

N+

P

N-

P

Performance Improvement by Process

VDSS

(V)

UMOS4 ANL2 ANL3

RDS(on）））） QG RDS(on）））） QG RDS(on）））） QG

40V 1.2m 260nC 0.85mΩ 198nC 0.7mΩ 230nC

RDS(on) comparison based on TO-263-7pin design

SJ StructureSJ Structure&

Cell Shrink

CellShrink

ANL3(under development)

n

+

n

-

P

N+

P

N-

P

n

+

n

-

P

N+

P

N-

P

P column

Super Low RDS(on) of 0.7mΩ realized in TO263-7


PAE-AA-12-0177-1PAE-AA-12-0177-1

Feature of ANL2 Series

Industry leading level RDS(on) x QG Performance

Reduction of on-losses

Reduction of Gate drive losses and switching losses

Suitable for high current drive application like EPS, ISG

(mΩ

x n

C)

312

1.2mΩ150nC

1.2mΩ260nC

SJ1UMOS4

0.85mΩ198nC

168

ANL2

-42%-46%

TO-263-7pin(40V) Comparison

ANL3

0.7mΩ230nC

161180

-48%

Ron x Qg (typ.) reduction by 48% compared with UMOS4



CY04 CY08 CY12 CY16

Norm

alized O

n R

esis

tance

1.0

2.0

0.8

0.5

P

5um cell

3um cell & deep p-column (modified SJ-process)

n+

n-

P

N+

P

N-

P

Process name :

ANM1Serial No.Middle voltagePolarity (N/P)Automotive

PowerMOSFET Middle-Voltage (100V) N-Channel

P-column

N-

N+

PP

Gen7UMOS3

Gen6UMOS2

ANM1under development

Nch

75~100V

~100V

100V

PAE-AA-12-0177-1PAE-AA-12-0177-1

Renesas Automotive NP-Series PowerMOSFET


PAE-AA-12-0177-1PAE-AA-12-0177-1

ID(DC)

PolarityN:N-Ch.P: P-Ch.

VDSS

Package codeK: TO-263ZK JEDECM: TO-220M JEDECN: TO-262N JEDECP: TO-263ZP S: TO-252ZK JEDECT: TO-263-7pV: TO-252ZPY: HSON-8Z: Bare Die

ProcessE: UMOS 2F: UMOS 3G: UMOS 4H: UMOS-2RJ: ANL1K: ANL2

Gate Drive TypeL: Logic level, G-S Protection DiodeH: Non-logic, G-S Protection DiodeD: Logic, no G-S Protection DiodeU: Non-Logic, no G-S Protection Diode

NP 110 N 055 P U K

NP Series device nomenclature

AEC-Q101 compliant


PAE-AA-12-0177-1PAE-AA-12-0177-1

VDSS 40V 55V/60V

PKGTO-

263-7p

TO-

263

TO-

220

262

TO-

252

HSON-8

Single

HSON-8

dual

TO

263-7p

TO-

263

TO-

220

262

TO-

252

HSON-8

Single

HSON-8

Dual

180A1.05

1.25

1.4

1.75

160A 1.5 2.1

120A1.95

2.15

110A1.4

1.75

1.75

2.2

100A 2.3 3.25

90A 2.952.8

3.32.8

4.0

4.5

3.8

4.4

3.85

4.5

75A 5.7 3.3 4.5

60A 3.95 4.3 3.856.0

6.6

5.5

6.6

50A 4.8

45A 109.6

.6

35A 6.7

30A8

121.65

11

17

16A 32

N-Ch: New gen. ANL2 Product map

(RDSon max / mΩ )62 products


VDSS 40V 55V/60V

PKGTO-

263-7p

TO-

263

TO-

220

262

TO-

252

HSON-8

Single

HSON-8

Dual

TO

263-7p

TO-

263

TO-

220

262

TO-

252

HSON-8

Single

HSON-8

Dual

180A1.05

1.25

1.4

1.75

160A 1.5 2.1

120A1.95

2.15

110A1.4

1.75

1.75

2.2

100A 2.3 3.25

90A 2.952.8

3.32.8

4.0

4.5

3.8

4.4

3.85

4.6

75A 5.7 3.3 4.5

60A 3.95 4.3 3.85 6.66.0

6.6

5.5

6.6

50A 4.8

45A 9.69.6

10.0

35A 6.7

30A8

10.1

11

17

16A 32

x.x :Under development

PAE-AA-12-0177-1PAE-AA-12-0177-1

VDSS 40V 60V

PKG

ID

TO263 TO252 HSON-8 TO263 TO252 HSON-8

100A 3.3mΩ 5.7mΩ

90A 4.9mΩ 9.4mΩ

75A 9.0mΩ13mΩ

16.8mΩ

50A 9.2mΩ 17mΩ

36A 15mΩ 30mΩ

20A 25mΩ 48mΩ

15A 42mΩ 80mΩ

Ron Reduction by Resurf Design

High Temp (175degC) Rated

Gate Logic Drive

Avalanche Guaranteed

WS schedule: ’’’’2013/(tbc)P+

N

P-

N

[Ron(max) @VGS=10V]

Next Gen Automotive Pch MOSFET

APL1 SeriesAPL1 Series

PAE-AA-12-0177-1PAE-AA-12-0177-1

100V Benchmark Device

VDSS (V)UMOS3 ANM1

RDS(on）））） QG RDS(on）））） QG

100V 6.7mOhm 130nC 2.6mOhm 160nC

Target Ron(typ) comparison based on TO-263 design

under development


Improvements and Optimisations

modified SuperJunction process

deeper P-column Ion implantation

low resistance epi-layer

Lower RDS(on)

Low Gate charge

FOM improvement

n+

n-

P

N+

P

N-

P

PAE-AA-12-0177-1PAE-AA-12-0177-1© 2013 Renesas Electronics Europe. All rights reserved.47

Adv. TO-263-7p

100V MOSFET Target Specification

Spec unit

VDSS 100 V

VGSS +/-20 V

ID(DC)* 250 A

RDSon max3.1 mΩ

VF max1.5 V

Tch max 175 degC

Rth(ch-c) 0.43 degC/W

Adv. TO252-5p

Spec unit

VDSS 100 V

VGSS +/-20 V

ID(DC)* 150 A

RDSon max7.2 mΩ

VF max1.5 V

Tch max 175 degC

Rth(ch-c) 0.9 degC/W

* 60 degC at case and leads faced to PCB

Short leads type to reduce PCB

47

under development

PAE-AA-12-0177-1PAE-AA-12-0177-1

Package trend Towards higher current & smaller size


PAE-AA-12-0177-1PAE-AA-12-0177-1

PowerMOSFET - Package Roadmap


Mo

un

tin

g A

rea

TO-263ZK TO-263ZP TO-263-7p TO-263-7p „short“TO-263ZK TO-263ZP TO-263-7p TO-263-7p „short“

180A

90A

TO-252 HSON-8 Mini HSON-8TO-252 HSON-8 Mini HSON-8

HSON-8dual *

SOP-8 dual SOP-8SOP-8 dual SOP-8

HSON-8

75A

* Under development

120A

30A

160mm2

66mm2

MiniHVSON-8

40A

10mm2

30mm2 30mm2

119mm2

180A

Note:MO-299116mm2

NEW

PAE-AA-12-0177-1PAE-AA-12-0177-1

HSON-8 Features

Optimal electrical performance due to flat lead package

Reduced footprint: 31mm2 vs 64mm2 (TO-252)

Enhanced thermal performance through exposed pad

Rth down to 1K/W

Well formed solder fillet on PCB possible due to plated pin toe

AOI possible (X-Ray is not necessary)

Combi footpattern possible

Proven Board Level Reliability:

TC 4500cyc confirmed with Innolot solder


PAE-AA-12-0177-1PAE-AA-12-0177-1

New HSON-8 Single Package Product Map

30V 40V 55V 60V 75V 100VVDSS

25m Ω

10m Ω

5m Ω

NP16N04YUG25mΩ

NP16N04YUG25mΩ

NP74N04YUG6mΩ

NP74N04YUG6mΩ

NP35N04YUG10mΩ

NP35N04YUG10mΩ

NP35N055YUK6.7mΩ

NP35N055YUK6.7mΩ

NP75N055YUK4.5mΩ

NP75N055YUK4.5mΩ

NP33N06YDG14mΩ

NP33N06YDG14mΩ

NP33N075YDF28mΩ

NP33N075YDF28mΩ

NP20N10YDF55mΩ

NP20N10YDF55mΩ

50m Ω

NP35N04YLG9.7mΩ

NP35N04YLG9.7mΩ

NP50N04YUK4.8mΩ

NP50N04YUK4.8mΩ

RD

So

n(m

ax)

@10V

NP20P06YLG49mΩ

NP20P06YLG49mΩ

NP75P04YLG9.7mΩ

NP75P04YLG9.7mΩ

NP50P03YDG8.4mΩ

NP50P03YDG8.4mΩ

NP75P03YDG6.2mΩ

NP75P03YDG6.2mΩ

-30V -40V -55V -60V

NP75N04YUG5.1mΩ

NP75N04YUG5.1mΩ

NP75N04YUK3.3mΩ

NP75N04YUK3.3mΩ

NP23N06YDG27mΩ

NP23N06YDG27mΩ NP40N10YDF

25mΩNP40N10YDF

25mΩ


PAE-AA-12-0177-1PAE-AA-12-0177-1

New HSON-8 Dual Package - Devices under Development-

Developmentpartnumber

Polarity/Process

VDSSPT

(TC=25°°°°C)

ID

(DC)Ron(max)@VGS=10V

Ron(max)@VGS=4.5V

Sample schedule

WS CS

VA0266QU04

Nch/ANL2

40V

73W 30A 8mΩ - OK OK

VA0266QL04 73W 30A 8mΩ TBD OK TBD

VA0304QU04 55W 30A 10.1mΩ - OK OK

VA0266QD06

60V

71W 30A 12.6mΩ 21mΩ OK Q3/'13

VA0304QD06 54W 30A 17mΩ 29mΩ OK Q3/'13

VA0304QU06 54W 30A 17mΩ - OK Q3/'13

VA0316QL06 34W 16A 32mΩ 54mΩ OK Q3/'13

VA0317QD06Pch/APL1

-60V 71W 30A 26mΩ TBD Q3 '13 Q4/'13

128mm2(=64mm2 x 2p) 31mm2

76% size reduction


NEWNEW


Renesas Power Package Road Map

53

TO-252TO-252

~110A

~60A

~90A

normalized package size

TO-263-7pTO-263-7p~180A

Maxim

um

curr

ent

rating (

A)

~75A

1 1/2 1/4

300

250

200

150

100

8pHSON8pHSON

TO-252ZPTO-252ZP

TO-263ZP(high current)

TO-263ZP(high current)

engine controlwiper, lampengine controlwiper, lamp

Smaller,multi output

（15.25mm ×10mm）

（14.85mm×10mm）

（9.8mm×6.5mm）

（9.8mm×6.5mm）

（6.0mm×5.15mm）

（15.9mm×14.2mm）

Bare dieBare die

20pHSOP20pHSOP

fan/pump motor ABS, others

fan/pump motor ABS, others

EPS, ISGEPS, ISG

~250A planning

Adv. TO-263-7pAdv. TO-263-7p

Adv.TO-252-5pAdv.TO-252-5p

~150A planning

8pHSON Dual8pHSON Dual


Planning Packages & Target specification

54

Comparison table for 40V MOSFET

* 60 degC at case and leads on PCB


Packages dimension

Adv. TO-263-7p short Adv. TO252-5p

PAE-AA-12-0177-1PAE-AA-12-0177-1

Documentation & Support


PAE-AA-12-0177-1© 2013 Renesas Electronics Europe. All rights reserved.57

PowerMOSFET documentation

Product Overview (April 2010)

PowerMOSFET & IPD (April 2013)

Product Scout Automotive (April 2013)

Samples

Sample stock in Duesseldorf, Europe

delivery within 1-2 days

[email protected]

Internet: www.renesas.eu/products/discrete/pmosfet

Download: datasheets and other documentation

Online Product Selector

P-Spice Models

Supported for all NP-series

Available on request within one week

PowerMOSFET Support


Appendix 1:N-Channel Power MOSFET product maps

PAE-AA-12-0177-1

TO-263TO-263-7pin

ANL2 MOSFET

Partnumber Package VDSS

ID

(DC)PT

(Tc=25)

Ron(max)@VGS=10V

Ron(max)@VGS=4.5V

QG

(typ)

Ciss

(typ)

Schedule

WS CS

NP180N04TUK

TO-263-7p

40V

180A 348W 1.05mΩ - 198nC 10500pF OK OK

VA0337TU04 180A 288W 1.25mΩ - 160nC 8300pF OK OK

NP160N04TUK 160A 250W 1.5mΩ - 126nC 7200pF OK OK

NP180N055TUK

55V

180A 348W 1.40mΩ - 194nC 10700pF OK OK

VA0337TU055 180A 288W 1.75mΩ - 160nC 8500pF OK OK

NP160N055TUK 160A 250W 2.1mΩ - 126nC 7500pF OK OK

NP110N04PUK

TO-263

40V

110A 348W 1.40mΩ - 198nC 10500pF OK OK

NP109N04PUK 110A 250W 1.75mΩ - 126nC 7200pF OK OK



NP89N04PDK 90A 147W 2.95mΩ 6.2mΩ 68nC 3900pF OK OK

NP60N04PDK 60A 105W 3.95mΩ 8.8mΩ 42nC 2450pF OK OK

NP110N055PUK

55V

110A 348W 1.75mΩ - 194nC 10700pF OK OK




VA0106PD06

60V

90A 147W 4.5mΩ 8.2mΩ 68nC 4000pF OK 07/’13

VA0107PD06

VA0107PL0660A 105W 6.6mΩ 12mΩ 42nC 2500pF OK 07/’13



PAE-AA-12-0177-1

TO-220 TO-262

ANL2 MOSFET

Partnumber Pkg VDSSID

(DC)PT

(Tc=25)Ron(max)@VGS=10V

Ron(max)@VGS=4.5V

QG(typ)

Ciss(typ)

ScheduleScheduleScheduleSchedule

WS CS

VA0337NU04

TO-262

40V

120A 288W 1.95mΩ - 160nC 8300pF OK OK

VA0072NU04 120A 250W 2.15mΩ - 126nC 7200pF OK OK

NP90N04NUK 90A 176W 2.85mΩ - 80nC 4700pF OK OK



NP90N055NUK

55V

90A 176W 3.8mΩ - 80nC 4900pF OK OK



NP90N04MUK

TO-220

40V

90A 176W 2.85mΩ - 80nC 4700pF OK OK

NP89N04MUK 90A 147W 3.3mΩ - 68nC 3900pF OK OK

VA0107ML04 60A 105W 4.3mΩ 9.6 42nC 2450pF OK Q2/’13


NP90N055MUK

55V

90A 176W 3.8mΩ - 80nC 4900pF OK OK



VA0107ML06 60V 60A 105W 6.6mΩ 12.8 42nC 2500pF OK 07/’13


PAE-AA-12-0177-1

TO-252

Partnumber Package VDSSID

(DC)PT

(Tc=25)Ron (max)@VGS=10V

Ron (max)@VGS=4.5V

QG

(typ)Ciss(typ)

Schedule

WS CS

NP90N04VUK

TO-252

40V

90A 147W 2.8mΩ - 68nC 3900pF OK OK

NP90N04VDK 90A 147W 2.8mΩ 6.0mΩ 68nC 3900pF OK OK

VA0106VL04 90A 147W 2.8mΩ 6.0mΩ 68nC 3900pF OK OK

NP60N04VUK 60A 105W 3.85mΩ - 42nC 2450pF OK OK


VA0107VL04 60A 105W 3.85mΩ 8.8mΩ 42nC 2450pF OK OK



NP90N055VUK55V

90A 147W 3.85mΩ - 68nC 4000pF OK OK


VA0106VD06VA0106VL06

60V

90A 147W 4.6mΩ 8.2mΩ 68nC 4000pF OK Q1/’14

VA0107VD06VA0107VL06

60A 105W 6.6mΩ 12mΩ 42nC 2500pF OK Q1/’14


VA0339VD06 45A 75W 10mΩ 22mΩ 27nC 1640pF OK Q3/’13

ANL2 MOSFET


PAE-AA-12-0177-1

HSON-8

ANL2 MOSFET


(DC)PT


QG

(typ)Ciss(typ)

Schedule

WS CS

NP75N04YUK

HSON-8

40V75A 138W 3.3mΩ 58nC 3400pF OK TBD

NP50N04YUK 50A 97W 4.8mΩ 38nC 2160pF OK TBD

NP75N055YUK55V

75A 138W 4.5mΩ 55nC 3500pF OK TBD

NP35N055YUK 35A 97W 6.7mΩ 38nC 2160pF OK TBD


PAE-AA-12-0177-1PAE-AA-12-0177-1

Partnumber Package VGSS VDSSID

(DC)

PT

(Tc=25)

Ron(max)

@VGS=10V

QG

(typ)

Ciss

(typ)

NP110N04PUJ

TO-263

20V

40V 110A 288W 1. 8mΩ 150nC 9500pF

NP110N055PUJ 55V 110A 288W 2. 4mΩ 150nC 9500pF



NP180N04TUJ

TO-263-7pin

40V 180A 348W 1. 5mΩ 150nC 9500pF

NP180N055TUJ 55V 180A 288W 2. 3mΩ 150nC 9500pF



NP100N04NUJ TO-262 40V 100A 220W 3. 0mΩ 107nC 5600pF

ANL1 Product overview

9 products released with W/W Top class RDS(on) x Qｇｇｇｇ features

Lower Drive Power

Faster Switching


PAE-AA-12-0177-1PAE-AA-12-0177-1

160-180A High Current PowerMOSFET Series

Super Low RDS(on) of 1.05mΩ (max)

High ID rating: up to 180A (DC)

Low gate charge version QG version planned


(DC)PT


Qg(typ)

Ciss(typ)

NP180N04TUK

TO-263-7p

40V

180A 348W 1.05mΩ 198nC 10500pF

VA0337TU04* 180A 288W 1.25mΩ 160nC 8300pF

NP180N04TUG 180A 288W 1.5mΩ 252nC 17100pF

NP180N04TUJ 180A 348W 1.5mΩ 150nC 9500pF

NP161N04TUG 160A 250W 1.8mΩ 230nC 13500pF

NP160N04TUK 160A 250W 1.5mΩ 126nC 7200pF

NP160N04TUG 160A 220W 2.0mΩ 180nC 10500pF

NP160N04TUJ 160A 220W 2.0mΩ 115nC 6900pF

NP160N04TDG 160A 220W 2.0mΩ 180nC 10500pF

NP180N055TUK

55V

180A 348W 1.4mΩ 194nC 10700pF

VA0337TU055* 180A 288W 1.75mΩ 160nC 8500pF

NP180N055TUJ 180A 348W 2.3mΩ 150nC 9500pF

NP160N055TUK 160A 250W 2.1mΩ 126nC 7500pF

NP160N055TUJ 160A 220W 3.0mΩ 115nC 6900pF

* Under development


PAE-AA-12-0177-1

Special High ID-rating series in TO-252

11 products of High ID-rating Series released !

Realized 90A ID rating in TO-252

Enabling size reduction

Applications: EPS, Wiper, Slide Door,…

ID=90A（（（（MAX.)Size：：：：64mm2

ID=90A（（（（MAX.)Size：：：：64mm2

ID=88A(MAX.)Size：：：：153mm2

ID=88A(MAX.)Size：：：：153mm2

TO263 Ad. TO-252

60% Size

Reduction

Product name VDSS VGSSID

(DC)

PT

(TC=25°°°°C)

RDS(on)max@VGS=10V

RDS(on)maxVGS=4.5V

Ciss

NP90N03VHG

30V

±±±±20 90A

105V 3.2mΩ - 5000pF

NP90N03VLG 105W 3.2mΩ 8.0mΩ 5000pF

NP90N03VUG 105W 3.2mΩ - 5000pF

NP90N04VUK

40V

147W 2.8mΩ - 3900pF

NP90N04VUG 105W 4.0mΩ - 5000pF

NP90N04VDG 105W 4.0mΩ 8.6mΩ 4600pF

NP90N04VLG 105W 4.0mΩ 8.6mΩ 4600pF

NP90N055VUK

55V

147W 3.85mΩ - 4000pF

NP90N055VUG 105W 6.0mΩ - 5000pF

NP90N055VDG 105W 6.0mΩ 10.5mΩ 4600pF

NP90N06VLG 60V 105W 7.8mΩ 12.5mΩ 4600pF


NEWNEW

PAE-AA-12-0177-1PAE-AA-12-0177-1

Medium Voltage Range PowerMOSFET

100V NP-Series100V NP-Series

Partnumber VDSS VGSS

ID

(DC)Ron(max)@VGS=10V

Ciss(typ) Package

NP82N10PUF 100V 20V 82A 15mΩ 2900pF TO-263

NP70N10KUF 100V 20V 70A 20mΩ 2500pF TO-263

NP40N10PDF 100V 20V 40A 27mΩ 2100pF TO-263

NP40N10VDF 100V 20V 40A 26mΩ 2100pF TO-252

NP36N10SDE 100V 20V 36A 33mΩ 3500pF TO-252

NP28N10SDE 100V 20V 28A 52mΩ 2200pF TO-252

NP40N10YDF 100V 20V 40A 25mΩ 2100pF HSON-8

NP20N10YDF 100V 20V 20A 55mΩ 1100pF HSON-8

Typical Applications:

Direct Injection, LED control

HID control, Up converter,

Small EV inverter

Ex) LED control

LED module

BoostConverter



Appendix 2:P-Channel Power MOSFET product maps

PAE-AA-12-0177-1

Renesas NP-Series Pch MOSFET – UMOS4

© 2013 Renesas Electronics Europe. All rights reserved.

RDSon<75mΩ

N15P04SLG40mΩ

N15P04SLG40mΩ

RDSon<50mΩ

RDSon<25mΩ

RDSon<10mΩ

40V 60V

TO-252 TO-263 TO-252 TO-263

N36P04SDG17mΩ

N36P04SDG17mΩ

N20P04SLG25mΩ

N20P04SLG25mΩ

NP50P04SDGNP50P04SLG

9.6mΩ

NP50P04SDGNP50P04SLG

9.6mΩ

N36P04KDG17mΩ

N36P04KDG17mΩ

N100P04PDG3.5mΩ

N100P04PDG3.5mΩ

N50P04KDG10mΩ

N50P04KDG10mΩ

N83P04PDG5.3mΩ

N83P04PDG5.3mΩ

N100P04PLG3.7mΩ

N100P04PLG3.7mΩ

RDSon<5mΩ

N15P06SLG75mΩ

N15P06SLG75mΩ

N20P06SLG48mΩ

N20P06SLG48mΩ

N36P06SLG30mΩ

N36P06SLG30mΩ

N50P06SDG16.5mΩ

N50P06SDG16.5mΩ

N36P06KDG29.5mΩ

N36P06KDG29.5mΩ

N50P06KDG17mΩ

N50P06KDG17mΩ

N83P06PDG8.8mΩ

N83P06PDG8.8mΩ

N100P06PDGN100P06PLG

6mΩ

N100P06PDGN100P06PLG

6mΩ

68


Appendix 3:New HSON-8 Power MOSFET product maps

PAE-AA-12-0177-1

HSON-8

HSON-8 N-Ch MOSFET Product Map


(DC)PT


QG

(typ)Ciss(typ)

Schedule

WS CS

NP75N04YUK

HSON-8(single)

40V

75A 138W 3.3mΩ 58nC 3400pF OK OK

NP75N04YUG 75A 138W 5.1mΩ 77nC 4300pF OK OK

NP74N04YUG 75A 120W 5.5mΩ 64nC 3620pF OK OK

NP50N04YUK 50A 97W 4.8mΩ 38nC 2160pF OK OK

NP35N04YUG 35A 77W 10mΩ 34nC 1900pF OK OK

NP35N04YLG 35A 77W 9.7mΩ 36nC 2160pF OK OK

NP16N04YUG 16A 36W 25mΩ 7nC 315pF OK OK

NP75N055YUK55V

75A 138W 4.5mΩ 55nC 3500pF OK OK

NP35N055YUK 35A 97W 6.7mΩ 38nC 2160pF OK OK

NP33N060YDG60V

33A 97W 14mΩ 52nC 2600pF OK OK

NP23N06YDG 23A 60W 27mΩ 27nC 1200pF OK OK

NP33N075YDF 75V 33A 88W 28mΩ 30nC 1500pF OK OK

NP40N10YDF100V

40A 120W 25mΩ 47nC 2100pF OK OK

NP20N10YDF 20A 73W 55mΩ 23nC 1100pF OK OK


PAE-AA-12-0177-1

HSON-8

HSON-8 P-Ch MOSFET Product Map


(DC)PT


QG

(typ)Ciss(typ)

Schedule

WS CS

NP75P03YDG

HSON-8(single)

-30V-75A 138W 6.2mΩ 94nC 3200pF OK OK

NP50P03YDG -50A 102W 9.0mΩ 64nC 2300pF OK OK

NP75P04YLG -40V -75A 138W 10.7mΩ 91nC 3200pF OK OK

NP20P06YLG -60V -20A 67W 49mΩ 34nC 1600pF OK OK



Power MOSFET for various Ind. applicationPower MOSFET for various Ind. applicationPower MOSFET for various Ind. applicationPower MOSFET for various Ind. application

PAE-AA-12-0177-1PAE-AA-12-0177-1

Per

form

ance

UMOS4Nch/Pch(±40～±60V)

NEW Process

Power tool

<Wafer Process>

Year～～～～2010 2011 2012 2013 2014 2015

VD

SS

/IDS

S

NP Series(Nch/Pch)(175 Guarantee)

JET-MV Series(Nch)(Hi Speed SW)

<Package>

LV Power Devices for Industrial use

Low Ron / Low Qg

New Products

N04/N06 Series(Nch)(Lo RDS(on))

Low Ron / High ID/175 guarantee

Low Ron

5x6 8pHVSON5x6 WPAK

UPS ServerSolar Power

40～～～～60V

60～～～～100V

JET-MV*(40~100V)

JET-MV*(40~100V)

*MV: Middle Voltage

New MV (80~100V) GaN Device

TO-220FPTO-220AB

TO-252 TO-220ABTO-263 TO-262

TO-252 TO-220ABTO-263 TO-262

’12 Oct.Rev.3.1 PAED

73

PAE-AA-12-0177-1PAE-AA-12-0177-174

Application: Secondary in AC-DC of Telecom, AC adapter, Motor drive

Features:

- Low Ron and Low Qg (High speed SW)

- High current rating

- TO-220AB/TO-220FP PKG Line up

Line up： TO-220AB TO-220FP

Typ Max MP1 RJK0601DPN TO-220AB 60 +20/-20 110 200 2.5 3.1 141 25.0 1.6 OK2 RJK0602DPN TO-220AB 60 +20/-20 100 150 3.1 3.9 90 16.0 1.5 OK3 RJK0603DPN TO-220AB 60 +20/-20 80 125 4.1 5.2 57 10.0 1.6 OK4 RJK0701DPN TO-220AB OK5 RJK0701DPP TO-220FP OK6 RJK0702DPN TO-220AB OK7 RJK0702DPP TO-220FP OK8 RJK0703DPN TO-220AB OK9 RJK0703DPP TO-220FP OK

10 RJK1001DPN TO-220AB OK11 RJK1001DPP TO-220FP OK12 RJK1002DPN TO-220AB OK13 RJK1002DPP TO-220FP OK14 RJK1003DPN TO-220AB OK15 RJK1003DPP TO-220FP OK

+20/-20 90

75 +20/-20

Schedule

70 5.3

75 +20/-20 100

3.9

3.0

100 +20/-20 80 5.5

7.6

100 +20/-20 50

4.4

100 +20/-20 70 6.0

8.8 59

Type no.VDSS

[V]VGSS

[V]ID[A]

Pch[W]

RDS(on)[mΩ] max.Qg[nC]

56

140

89

8.0 1.6

30.0

12.0 1.611.0

200

150

125

200

150

125

1.6

19.0 1.5

3.8

4.8

6.7

147

94

No.

21.0 1.6

13.0 1.5

VGS=10VPKGQgd[nC]

Rg[Ω]

75

JET-MV Series (Insertion PKG) Line-up

PAE-AA-12-0177-1PAE-AA-12-0177-175

New Nch -MOSFET (60V)

BL inverters, Industrial motor drive, Nch 60V

DC Fan Motor Drive etc.

Input 24V

M

PWMControl

IC

GateDriver

Input 24V

M

PWMControl

IC

GateDriver

Input

～48V

CCFL / EEFL

CCFL / EEFL

Control IC

CCFL Backlight Inverter

SOP8Isolated TO-220

Typ Max Typ Max ES MP1 N0600N TO-220iso Single N 60 +20/-20 30 20 17.5 25 22.3 36 29.8 9.0 OK OK2 uPA3753GR SOP8 Dual N 60 +20/-20 5 1.5 44.0 56 49.0 72 13.4 3.1 OK OK

Pch(W)

VGS=10V VGS=4.5VRDS(on) (mΩ)

ScheduleQg[nC]

Qgd[nC]

No. Type No. PKG Configuration PolarityID(A)

VDSS(V)

VGSS(V)

PAE-AA-12-0177-1PAE-AA-12-0177-1

Application: General Industrial use

Features:

- 175 guarantee- Ultra Low RDS(on)- High current rating- TO-220AB/TO-262/TO-263/TO-263-7p PKG Line up

Nch Line up：

TO-262 TO-263TO-220AB TO-252

NP Series Line-up (40V, 55V) (Nch)

Typ Max MP1 NP90N04MUK 90 176 2.35 2.8 80 20 OK2 NP89N04MUK 90 147 2.75 3.3 68 18 OK3 NP90N04NUK 90 176 2.35 2.8 80 20 OK4 NP89N04NUK 90 147 2.75 3.3 68 18 OK5 NP110N04PUK 110 348 1.15 1.4 198 48 OK6 NP109N04PUK 110 250 1.4 1.75 126 31 OK7 NP100N04PUK 100 176 1.9 2.3 80 20 OK8 NP110N055PUK 110 348 1.45 1.75 196 45 OK9 NP109N055PUK 109 250 1.85 2.2 126 31 OK10 NP100N055PUK 100 176 2.7 3.25 80 20 OK11 NP180N04TUK 180 348 0.85 1.05 198 48 OK12 NP160N04TUK 160 250 1.25 1.5 126 31 OK13 NP180N055TUK 180 348 1.15 1.4 196 45 OK14 NP160N055TUK 160 250 1.75 2.1 126 31 OK

+20/-20

TO-262

ScheduleQgd[nC]

RDS(on)[mΩ]Qg[nC]

+20/-20

(VGS=10V)PKGPart No.VDSS

[V]

+20/-20

Pch[W]

ID[A]

VGSS[V]

TO-220AB

No.

TO-263-7p40

55

+20/-20

+20/-20

TO-263

40

40

55

76

PAE-AA-12-0177-1PAE-AA-12-0177-1

Application: General Industrial use

Features:

- 175 guarantee- Ultra Low RDS(on)- High current rating- TO-263/TO-252 PKG Line up

Pch Line up：

TO-262 TO-263TO-220AB TO-252

NP Series Line-up (-40V, -60V) (Pch)

Typ Max Typ Max MP1 NP100P04PLG -100 200 2.8 3.7 3.4 5.1 320 85 OK2 NP100P04PDG -100 200 2.8 3.5 3.4 5.1 320 85 OK3 NP83P04PDG -83 150 4.1 5.3 5.1 8.0 200 53 OK4 NP100P06PDG -100 200 4.4 6.0 5.0 7.8 300 85 OK5 NP83P06PDG -83 150 6.9 8.8 8.0 12 190 53 OK6 NP50P04SDG -50 84 7.7 9.6 9.3 15 100 28 OK7 NP36P04SDG -36 56 12.5 17 15.4 23.5 55 15 OK8 NP20P04SLG -20 38 20 25 24 38 34 8 OK9 NP15P04SLG -15 30 31 40 38 60 23 7 OK10 NP50P06SDG -50 84 13.2 16.5 14.9 23 100 30 OK11 NP36P06SLG -36 56 24 30 27 40 52 15 OK12 NP20P06SLG -20 38 36 48 42 64 34 9 OK13 NP15P06SLG -15 30 56 70 62 95 23 7 OK

Qgd[nC]

Type No.VGSS

[V]VDSS

[V]No.

TO-263-40 -20/+20

-60

Schedule

-60 -20/+20

TO-252

-40

(VGS=10V)PKGID[A]

-20/+20

-20/+20

Qg[nC]

RDS(on)[mΩ](VGS=4.5V)

RDS(on)[mΩ]Pch[W]

77

77

PAE-AA-12-0177-1PAE-AA-12-0177-178

Application： Power Tool , General industrial use , etc.

Features：

- Ultra Low RDS(on)

- High current rating, suitable for Power tool, etc. ID=100A (N0412/434/413/601/602/603N)

- TO-220AB/TO-263/TO-262 /TO-252PKG line up

Line up：

＊＊＊＊Under development : MP Nov./’12 (N0435-438N, N0605 -606N) Jan./’13 (N0607-608N) The development plan and characteristics of this se ries may be changed without notice.

TO-262 TO-263TO-220AB TO-252

Typ Max ES MP1 N0412N 100 119 3.0 3.7 100 32 OK OK2 N0435N* 80 T.B.D. 3.9 4.8 59 17 OK Nov/'123 N0437N 60 T.B.D. 5.3 6.6 40 T.B.D. OK Nov/'124 N0434N TO-262 100 119 3.0 3.7 100 32 OK OK5 N0413N TO-263 100 119 2.7 3.3 100 32 OK OK6 N0436N* 80 T.B.D. 3.9 4.9 59 T.B.D. OK Nov/'127 N0438N* 52 T.B.D. 6.1 7.7 35 T.B.D. OK Nov/'128 N0602N 100 156 3.6 4.6 133 38 OK OK9 N0604N 82 116 4.9 6.5 75 21 OK OK

10 N0605N* 80 T.B.D. 6.8 8.5 57 16 OK Nov/'1211 N0606N* 60 T.B.D. 9.6 12.0 39 T.B.D. OK Nov/'1212 N0603N TO-262 100 156 3.6 4.6 133 38 OK OK13 N0601N TO-263 100 156 3.3 4.6 133 38 OK OK14 N0607N* 80 T.B.D. 6.8 8.6 57 T.B.D. Oct/'12 Jan/'1315 N0608N* 52 T.B.D. 11.2 14 35 T.B.D. Oct/'12 Jan/'13

60+20/-

20

PKG

TO-220AB

TO-252

TO-220AB

TO-252

Type No.VDSS

[V]VGSS

[V]ID[A]

RDS(on)[mΩ]No. VGS=10V

Schedule

40+20/-

20

Pch[W]

Qg[nC]

Qgd[nC]

N04*/N06* Series (40V, 60V) (Nch)


IGBT products highlightIGBT products highlightIGBT products highlightIGBT products highlight

PAE-AA-12-0177-1PAE-AA-12-0177-1


80

Renesas’ power devices enable high-efficiency inverters

Thin wafer (@8-inch)

Trench-filling epitaxial technology, ultra-thin wafer process technology and space-saving packaging yield more compact systems with high efficiency

Gate Emitter

Ｎ-

Ｎ+

Ｐ+

Epilayer

C

Ｎ-

p+

P Ｎ

Ｎ+

Back sideelectrode

Field stop structureHole barrier structure

Ultrathin thicknesswith 8 inches wafer

GxH IGBTG5H IGBT

Gate Emitter

PAE-AA-12-0177-1PAE-AA-12-0177-1

Performance Focus

Power Supply & Industrial

Motor Control Applications Short Circuit capability (5 to 10µsec) Process optimization focused on tradeoff Eoff, Vce(sat) and Short Circuit Capability

Standard packages to support industry standard TO-220 & TO-247

Extended 600-1350V, 5 to 90A series

Efficiency and Robustness focus on Induction Cooking, White Goods, Pumps, Motor Controls Applications Total Front & Back end capacity control

Renesas Power IGBTs

Renesas targets top performance for high voltage, high speed applications through comprehensive in-house device processes.

81

PAE-AA-12-0177-1

Application Optimized

Characteristics

82

IGBT Products

year2010 2011 2012 2013

Thin Wafer Technology enables high efficiency solutions

RJH1BF Series

Short Circuit Capability

RJH1CD/V (5µµµµs) / RJH1CM(10µµµµs)

series

G7H

1600V and up

1350V

1200V

1100V

600V

RJH1CF Series

RJH1DF Series

RJH1F series High Speed

Short Circuit CapabilityRJH60D/A8x(5µµµµs) RJH60M(10µµµµs)

Package IntegrationRJQ series

G6HReverse

Conducting RJH60FXR Series

PAE-AA-12-0177-1

IGBT Overview

Advantages/Highlights:

Renesas own technology HiGT (High conductivity IGBT) based on thin wafer trench technology achieving low Vce(sat) for low static losses

Wide range of current and voltage ratings

Optimized product series for individual application requirements

ultra low losses (F- series) , Vce(sat)

high robustness (D, V, M, A -series), tsc = 3µs..5µs..10µs

High switching speed (D, M, 608-series), f < 100kHz

Isolated and non isolated packages, Through Hole and Surface Mounted Devices

High gate emitter voltage rating

Integrated fast recovery diode (RJH) and non fast recovery diode (RJP)

Applications, typical:

Motor control,

Industrial/consumer

Welding, Solar Inverter,

Power Supply Units

Power Factor Correction

Induction heating

83

Appli-cation

/

Voltage

Induc-tion heating

Inverter Small motor control

Motor control, robust

Power supply unit

600V F D, (F) A, D D, M 608

1100V BF

1200V CF CV, CD CV, CD CD, CM

1350V DF

PAE-AA-12-0177-1PAE-AA-12-0177-1

600V IGBT Portfolio

84

PAE-AA-12-0177-1PAE-AA-12-0177-185

Comparison of IGBT Technology

Vce(s

at) (V

)

1.0

2.0

1.5

2.5

Turn-off Loss (μJ)800400 1200 1600

Ｇ５ＨＧ５ＨＧ５ＨＧ５Ｈ

Ｇ７ＨＧ７ＨＧ７ＨＧ７Ｈ

Ａ

Ｇ６ＨＧ６ＨＧ６ＨＧ６Ｈ

High performanceHigh performanceHigh performanceHigh performance

B

600V600V600V600V

Low

conduction loss

Low turn off loss

HighEfficiency

PAE-AA-12-0177-1PAE-AA-12-0177-186

IGBT, 600V A series for Consumer Applications (white goods)

Monolithic IGBT and Reverse Conducting Diode to minimize costs

Current ratings Ic (@100°C) = 5A to 15A

Designed to minimize power losses

Packages: Through Hole TO-220xx,

Surface Mounted: LDPAK-S/TO252

PAE-AA-12-0177-1PAE-AA-12-0177-1

IGBT A series for Consumer Applications

IGBT Diode Package

Part Number VCES (V)IC (A)@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typtrr (ns)

typPc(W)

RJH60A01RDPD-E0 600 5 1.8 80 5 0.10 3.57 Y 1.5 120 35 TO-252

RJH60A81RDPD-E0 600 5 1.8 80 5 0.10 3.57 Y 1.5 120 35 TO-252

RJH60A83RDPD-E0 600 10 1.8 80 5 0.15 2.78 Y 1.5 150 45 TO-252

RJH60A83RDPE 600 10 1.8 80 5 0.15 2.40 Y 1.5 150 52 LDPAK-S

RJH60A83RDPN-E0 600 10 1.8 80 5 0.15 2.40 Y 1.5 150 52 TO-220AB

RJH60A83RDPP-M0 600 10 1.8 80 5 0.15 6.00 Y 1.5 150 21 TO-220FL

RJH60A85RDPE 600 15 1.8 80 5 0.20 1.10 Y 1.5 150 133 LDPAK-S

RJH60A85RDPN-E0 600 15 1.8 80 5 0.20 1.10 Y 1.5 150 133 TO-220AB

RJH60A85RDPP-M0 600 15 1.8 80 5 0.20 4.17 Y 1.5 150 30 TO-220FL

87


IGBT 600V, D-series, for inverter application, (small) motor

Low static losses through low Vce(sat), improved characteristics at low operating current

Short circuit capability time up to tsc=5µs

With integrated fast recovery diode

Current ratings Ic (@100°C)= 10A to 50A

Packages: Through Hole: TO-220xx; TO-3P; TO247

Surface Mounted: TO-252, LDPAK-S

PAE-AA-12-0177-1

IGBT, 600V D series portfolio

IGBT Diode Package

Part NumberVCES

(V)IC (A)

@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typtrr (ns)

typPc(W)

RJH60D1DPP-M0 600 10 1.9 90 5 0.13 4.10 Y 1.4 70 30 TO-220FL

RJH60D1DPE 600 10 1.9 90 5 0.13 2.38 Y 1.4 100 52 LDPAK-S

RJH60D2DPP-M0 600 12 1.7 80 5 0.16 3.70 Y 1.2 100 34 TO-220FL

RJH60D2DPE 600 12 1.7 80 5 0.16 1.98 Y 1.2 100 63 LDPAK-S

RJH60D3DPP-M0 600 17 1.6 80 5 0.21 3.15 Y 1.3 100 40 TO-220FL

RJH60D3DPE 600 17 1.6 80 5 0.21 1.11 Y 1.3 100 113 LDPAK-S

RJH60D0DPM 600 22 1.6 70 5 0.29 3.13 Y 1.4 100 40 TO-3PFM

RJH60D0DPQ 600 22 1.6 70 5 0.29 0.89 Y 1.4 100 140 TO-247

RJH60D5DPM 600 37 1.6 50 5 0.40 2.78 Y 1.4 100 45 TO-3PFM

RJH60D5DPQ 600 37 1.6 50 5 0.40 0.63 Y 1.4 100 200 TO-247

RJH60D5BDPQ 600 37 1.6 50 5 0.40 0.63 Y 2.5 25 200 TO-247

RJH60D6DPM 600 40 1.6 50 5 0.60 2.50 Y 1.4 100 50 TO-3PFM

RJH60D6DPQ 600 40 1.6 50 5 0.60 0.48 Y 1.4 100 260 TO-247

RJH60D7ADPK 600 50 1.6 50 5 0.60 0.42 Y 1.4 100 300 TO-3P

RJH60D7DPM 600 50 1.6 50 5 0.60 2.27 Y 1.4 100 55 TO-3PFM

RJH60D7DPQ 600 50 1.6 50 5 0.60 0.42 Y 1.4 100 300 TO-247

RJH60D7BDPQ 600 50 1.6 50 5 0.60 0.42 Y 2.5 25 300 TO-247

89


Part Number VCES (V)IC (A)

@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ. Eoff (mJ) typ.Rthj-c( /W)

FRDVf (V)

typtrr (ns)

typPc(W)

RJH60V1BDPP-M0 600 8 1.6 110 6 0.11 4.10 Y 2.5 25 30 TO-220FL

RJH60V1BDPE 600 8 1.6 110 6 0.11 2.40 Y 2.5 25 52 LDPAK-S

RJH60V2BDPP-M0 600 12 1.6 80 6 0.18 3.70 Y 2.5 25 34 TO-220FL


RJH60V2BDPN-E0 600 12 1.6 80 6 0.18 1.98 Y 2.5 25 63 TO-220AB

RJH60V3BDPP-M0 600 17 1.6 80 6 0.30 3.15 Y 2.5 25 40 TO-220FL


PackageIGBT Diode

IGBT, 600V V series portfolio with fast recovery diode


Application example: Inverter for motor control

Motor

<Inverter>

<PFC>

Oｐｔ coupler

MCU

PWM

PFC-IC

DiodesRJU60Cx / RJU605x

series

IGBTsRJH60Fx /

RJH608xB series

IGBTsRJH60Dx / RJH60Mx

series


series

PS9306※※,PS9506※※PS9305※※,PS9505※※

3-phase motor


IGBT, 600V M series

for inverter application, large motor

Low static losses through low Vce(sat)

Highly robust through short circuit capability time of tsc=8µs



Packages: Through Hole: TO-220FL, TO-3P

Surface Mounted: LDPAK-S


IGBT 600V, M-Series

for motor drives with high robustness, tsc =8µs

IGBT Diode Package

Part NumberVCES

(V)IC (A)

@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typtrr (ns)

typPc(W)

RJH60M1DPP-M0 600 8 1.9 80 8 0.11 4.10 Y 1.4 80 30 TO-220FL

RJH60M1DPE 600 8 1.9 80 8 0.11 2.40 Y 1.4 100 52 LDPAK-S

RJH60M2DPP-M0 600 12 1.9 80 8 0.14 3.70 Y 1.2 100 34 TO-220FL

RJH60M2DPE 600 12 1.9 80 8 0.14 1.98 Y 1.2 100 63 LDPAK-S

RJH60M3DPP-M0 600 17 1.8 80 8 0.28 3.15 Y 1.3 100 40 TO-220FL

RJH60M3DPE 600 17 1.8 80 8 0.28 1.11 Y 1.3 100 113 LDPAK-S

RJH60M3DPQ 600 17 1.8 80 8 0.28 1.11 Y 1.3 100 113 TO-247

RJH60M0DPQ 600 22 1.8 80 8 0.29 0.89 Y 1.4 100 140 TO-247

RJH60M5DPQ 600 37 1.8 TBD 8 0.40 0.63 Y 1.4 100 200 TO-247

RJH60M6DPQ 600 40 1.8 80 8 0.60 0.48 Y 1.4 100 260 TO-247

RJH60M7DPQ 600 50 1.6 TBD 8 0.60 0.42 Y 1.4 100 300 TO-247


IGBT 600V, 608 series

for Power supply unit, PFC application

Minimize power losses at high operating frequency

With (RJH) and without (RJP) integrated fast recovery diode


Packages: Through Hole: TO-220AB, TO-3P


IGBT 600V, 608 series for PSU

High speed switching for PFC

FRD

IF

(V) 25 100 (V) Iｃ（A) VGE(V) (ns) Iｃ（A) VCE(V) (us) (A) (V) (ns)

RJP6085DPN 40 - － 2.65 40 15 40 40 300 －－－－ TO-220AB

RJP6085DPK 40 - － 2.65 40 15 40 40 300 －－－－ TO-3P

High Speed Switching RJH6085BDPK 40 - Y 3 40 15 40 40 300 －－ TO-3P

RJH6086BDPK 45 - Y 3.4 45 15 45 40 300 －－ TO-3P

RJH6087BDPK 50 - Y 3.5 50 15 50 40 300 －－ TO-3P

RJH6088BDPK 60 - Y 3.5 60 15 60 40 300 －－ TO-3P

600

VFtyp

trrtyp

PackageConditions Conditions

FRD *Y:built-: Non

tsc **typ

IGBT

Features P/Ntf typ. (Inductive Load)VCE(sat) typ.VCES

IC (A)

Tc


Application example: Inverter

<Inverter>

<PFC>

Buffer

MCU

PWM

PFC-IC

Page No. 25~

Chopper Motor


seriesIGBTs

RJH60Fx / RJH608xB series

IGBTsRJP60Dx

series


IGBT, 600V F series

for Induction Heating, Resonant Topologies applications

High speed operation (Low Eoff)


Current ratings Ic = 40A to 90A

Packages:

THD: TO-220FL, TO-3P, TO-3PFM, TO-247A

SMD: LDPAK-S


IGBT 600V F serie

Induction Heating, Resonant Topologies Applications

IGBT Diode Package

Part NumberVCES

(V)IC (A)

@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typ

trr (ns)typ

Pc(W)

RJH60F3DPQ-A0 600 20 1.4 80 － 0.90 0.70 Y 1.6 140 179 TO-247A

RJP60F0DPE 600 25 1.4 90 －－ 1.02 N －－ 122 LDPAK-S

RJP60F0DPM 600 25 1.4 90 －－ 3.13 N －－ 40 TO-3PFM

RJH60F0DPQ-A0 600 25 1.4 90 － 0.90 0.62 Y 1.6 140 202 TO-247A

RJP60F4DPM 600 30 1.4 80 －－ 3.03 N －－ 41 TO-3PFM

RJP60F4DPQ 600 30 1.4 80 －－ 0.53 N －－ 236 TO-247

RJH60F4DPQ-A0 600 30 1.4 80 － 0.80 0.53 Y 1.6 140 236 TO-247A

RJP60F5DPM 600 40 1.37 85 －－ 2.78 N －－ 45 TO-3PFM

RJP60F5DPK 600 40 1.37 85 －－ 0.48 N －－ 260 TO-3P

RJH60F5DPQ-A0 600 40 1.37 85 － 0.85 0.48 Y 1.6 140 260 TO-247A

RJH60F6DPQ-A0 600 45 1.35 74 － 0.93 0.42 Y 1.6 140 298 TO-247A

RJH60F7ADPK 600 50 1.35 90 － 0.90 0.38 Y 1.6 140 329 TO-3P

RJH60F7BDPQ-A0 600 50 1.35 90 － 0.90 0.38 Y 2.5 25 329 TO-247A

RJH60F7DPQ-A0 600 50 1.35 90 － 0.90 0.38 Y 1.2 90 329 TO-247A

PAE-AA-12-0177-1PAE-AA-12-0177-1

1100V/1200V and 1350V IGBT Portfolio



IGBT, 1100V/ 1200V/ 1350V, BF/CF/DF series

for induction heating applications

Minimize Power Losses

Three different high voltage levels available


Current ratings Ic (@100°C) = 20A to 35A, depending on voltage level

Packages: Through Hole: TO-247A


IGBT 1100V to 1350V, for induction heating

BF/CF/DF-series

IGBT Diode Package


@100VCEsat (V)

typ.tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typ

trr (ns)typ

Pc(W)

RJH1BF6RDPQ-80 1100 30 1.7 247 －－ 0.55 Y 3 － 227 TO-247

RJH1BF7RDPQ-80 1100 35 1.6 208 －－ 0.50 Y 3 － 250 TO-247

RJH1CF4RDPQ-80 1200 20 2.0 300 －－ 0.80 Y 4.2 － 156 TO-247

RJH1CF5RDPQ-80 1200 25 1.95 272 －－ 0.65 Y 4.2 － 192 TO-247

RJH1CF6RDPQ-80 1200 30 1.8 275 －－ 0.55 Y 3 － 227 TO-247

RJH1CF7RDPQ-80 1200 35 1.85 250 －－ 0.50 Y 3 － 250 TO-247

RJH1DF7RDPQ-80 1350 35 1.95 208 －－ 0.50 Y 3.4 － 250 TO-247


IGBT, 1200V CV/CD/CM series

for motor drives

Ultra low static losses through ultra low Vce(sat), CV-series

Low static losses through low Vce(sat), CD/CM-series

Short circuit capability:

CV /CD-series: tsc=5µs

CM-series: tsc=10µs



Package: Through Hole: TO-247A


IGBT 1200V, CV/CD/CM series

for motor drives

IGBT Diode Package


@100

VCEsat (V)typ.

tf (ns)typ.

tsc (µs) typ.

Eoff (mJ) typ.

Rthj-c(/W)

FRDVf (V)

typtrr (ns)

typPc(W)

RJH1CM5DPQ-A0 1200 15 2.1 100 10 0.90 0.48 Y 1.7 200 260 TO-247A

RJH1CD5DPQ-A0 1200 20 2.0 100 5 0.90 0.48 Y 1.7 200 260 TO-247A

RJH1CM6DPQ-A0 1200 20 2.1 100 10 1.20 0.42 Y 1.7 200 298 TO-247A

RJH1CV5DPQ-A0 1200 25 1.8 200 5 1.50 0.48 Y 1.7 200 260 TO-247A

RJH1CD6DPQ-A0 1200 25 2.0 100 5 1.20 0.42 Y 1.7 200 298 TO-247A

RJH1CM7DPQ-A0 1200 25 2.1 100 10 1.80 0.38 Y 1.7 200 329 TO-247A

RJH1CV6DPQ-A0 1200 30 1.8 200 5 1.70 0.42 Y 1.7 200 298 TO-247A

RJH1CD7DPQ-A0 1200 30 2.0 100 5 1.80 0.38 Y 1.7 200 329 TO-247A

RJH1CV7DPQ-A0 1200 35 1.8 200 5 2.50 0.38 Y 1.7 200 329 TO-247A

PAE-AA-12-0177-1PAE-AA-12-0177-1

G7H IGBT

• World’s lowest loss with new structure (thin wafer, high density)• Improved short circuit withstanding time: 20% better than G6H series• Wide product line-up covering from 600 V to 1800 V, 20 A to 200 A

High Efficiency IGBT

Advantages of Renesas 7th. Generation IGBT ‘G7H’ series

104

Gate Emitter

C

Ｎ-

Ｎ+

Ｐ+

Epilayer

C

Ｎ-

p+

P Ｎ

Ｎ+

Back sideelectrode

Field stop structureHole barrier structure

Cell shrink

Ultrathin thicknesswith 8 inches wafer

G6H IGBTG5H IGBT

Back sideelectrode

Gate Emitter

C

Ｎ-

p+

P Ｎ

Ｎ+

Back sideelectrode

Gate Emitter

PAE-AA-12-0177-1PAE-AA-12-0177-1105

Withstand Voltage VCES,VDSS(V)

Curr

ent

IC（A

)

10

5０

100

100 500 1000 2000

200

650V 1250V 1800V

1100V/~60A

TSOP12（200A）

TO247

400

600V/~90A

1350V/~70A

6666thththth Generation IGBTGeneration IGBTGeneration IGBTGeneration IGBT(G6H)(G6H)(G6H)(G6H)

GeneralInverter

Bare Die

Application map for IGBTSolid line: WS availableBroken line: Under development

PAE-AA-12-0177-1

Series MAP of G7H

Turn-off time tf [ns]@VGE=15V,IC=IC@100,VCc=300V,Inductive load

VCE(s

at)

[V]

@VG

E=

15V,I

C=

IC@

100

,Tj=

25

RJH65T2xVCE(sat)=2.0Vtf=38nsTsc=None

RJH65S0xVCE(sat)=1.6Vtf=80nsTsc>10µs

6th Gen.VCE(sat)=1.8Vtf=80nsTsc>6µs

Right series for right application

RJH65T4xVCE(sat)=1.8Vtf=43nsTsc=None

106

150ns80ns40ns

High Speed

High Tsc

Low VCE(sat)

RJH65D27VCE(sat)=1.3Vtf=150nsTsc>3µs

RJH65M0xVCE(sat)=1.55Vtf=45nsTsc>5µs

IHHigh SpeedLow VCE(sat)

RJH60T04VCE(sat)=1.5Vtf=45nsTsc=nones

PAE-AA-12-0177-1PAE-AA-12-0177-1

[Tj=

25

,IC/C

.S.=

5.14

A/m

m2,

VG

=15

V]

[Tj=150,IC=30A,VGE=15V,L=100uH,Rg=5Ω]

Performance comparison

Company I

(H3)

6thGen

650V for PFC

(WARP)

Company RCompany F(SMD)

4001.0

1.5

2.0

2.5

3.0

3.5

VC

E(s

at)

[V]

600 800 1,000 1,200

Eoff [µJ]

7thGen

(RJH60Fx)HighEfficiency

(RJH65T2x)

High speed

Low VCE(sat)

High Speed RJH65T2x/T4x


PAE-AA-12-0177-1PAE-AA-12-0177-1

PFC Efficiency

96,0

96,4

96,8

97,2

97,6

0,0 0,4 0,8 1,2 1,6

96,0

96,4

96,8

97,2

97,6

0,0 0,4 0,8 1,2 1,6

η(%

)η

(%)

η(%

)η

(%)

η(%

)

Pout [W] Pout [W]

CCM methodf=35kHzVin=200VVout=400VFRD:RJU6054SDPK-M0

CCM methodf=35kHzVin=200VVout=400VFRD:RJU6054SDPK-M0

(1) 20A class (2) 50A class

RJH60F3DPQ(G6H)

Company R (WARP)

Company I (H3)

RJH65T23DPK(G7H)

RJH65T26DPK(G7H)

Company F (SMD)

RJH60F5DPQ(G6H)

Better performance in efficiency


108

PAE-AA-12-0177-1PAE-AA-12-0177-1

Product Line-up plan (650V)

VCES(V)

Ic (A)

IGBT Diode Status (CY)

P/NV

CE(sat) (V)

tf (ns)@125 tsc (µs) IF(A) V

F(V) ｔｒｒ(ns) Package

WS MP

25°C 100°C typ. Ic (A) typ. Ic (A) min. 25°C ｔyp. ｔyp.

RJH65T25DPQ-A0 650 (60) (30) 2.0 30 (38) 30 - （10） (1.6) TBD TO-247 2Q/ ’13 1Q/ ’14

RJH65T26DPQ-A0 650 (80) (40) 2.0 40 (38) 40 - （10） (1.6) TBD TO-247 OK(TO-3P)

Sep ’13

RJH65T26DPM 650 (80) (40) 2.0 40 (38) 40 - （10） (1.6) TBD TO-3PFM 1Q/ ’13 1Q/ ’14


TO-3PFMTO-247

High Speed

VCES(V)

Ic (A)


P/NV

CE(sat) (V)



WS MP

25°C 100°C typ. Ic (A) typ. Ic (A) min. 25°C ｔyp. ｔyp.

RJP65T43DPM 650 (40) (20) 1.8 20 (43) 20 - None TO-3PFM OK Sep ’13


RJH65T46DPQ-A0 650 (80) (40) 1.8 40 (43) 40 - （10） (1.6) TBD TO-247 OK(TO-3P)

Sep ’13


Low VCE(sat)

109


PAE-AA-12-0177-1

0000

5555

10101010

1.01.01.01.0 1.51.51.51.5 2.02.02.02.0

110

RJH60Fseries

ConditionVcc=360VVGE=15VTc=25°C

600/650V

Short circuit withstanding time

Sho

rt c

ircui

t tim

e (t

yp)

Hig

h re

liabi

lity

Vce(sat) @Ic= rating[A] typ.

Low conduction loss

RJH65Sseries

RJH60Dseries

RJH60Mseries

RJH65Dseries

G7H

G6H

High Tsc RJH65M0x

PAE-AA-12-0177-1PAE-AA-12-0177-1

[Tj=

25

,IC/C

.S.=

1.67

A/m

m2,

VG

=15

V]

[Tj=125,IC=15A,VC=300V,L=100uH,Rg=5Ω]

Performance comparison

7thGen

Company I

(H3)

6thGen

HighPerformance

650V(Tsc>5µs)

Company R

Company F(UFS)

00.5

1.0

1.5

2.0

2.5

3.0

VC

E(s

at)

[V]

50 100 150 200

Fall time tf [ns]

High Tsc RJH65M0x

111

PAE-AA-12-0177-1PAE-AA-12-0177-1112

Characteristic Comparison

Product

Number

Renesas Infineon Unit

RJH65M04ADPQ

(G7H)

IGW50N60H3

(HighSpees3)-

Vce 650 600 V

Ic

(100deg.C)50 50 A

Vce(sat)typ

(25 deg.C)

1.55

(50A)

1.85

(50A)V

SW-LOSS

(125)

tf 63 60 ns

Eon 2.48 2.71 uJ

Eoff 1.67 1.77 uJ

tsc(Min)

5 5 µs

High Tsc RJH65M0x

VCES(V)

Ic (A)


P/NV

CE(sat) (V)



WS MP

25°C 100°Ctyp. Ic (A) typ. Ic (A) min. 25°C ｔyp. ｔyp.

RJH65M04ADPQ-A0 650 100 50 1.5 50 (45) 50 5 （50 ） (1.55) (75) TO-2472Q/ ’13(TO-3P)

1Q/ ‘14

Tsc>10µS Ver. is also planed as RJH65S0x.

PAE-AA-12-0177-1113

Company IIGW50N60T

InfineonIGW50N60H3

Renesas7th GenTsc>3µs

Renesas6th Gen(RJH60F7A)

Collecto

r curr

ent

IC [

A]

0

10

20

30

40

50

0 0.5 1.0 1.5 2.0

Collector Emitter voltage VCE [V]

Low VCE(sat) G7H

Tc=25

VGE=15V

LowConduction Loss

Out put characteristics

Low VCE(sat) RJH65D27

PAE-AA-12-0177-1PAE-AA-12-0177-1114

Items Symbol Ratings Unit

Collector-Emitter voltage VCE 650 V

Gate-Emitter voltage VGE ±30 V

Collector current IC (25) 100 A

(100) 50 A

Diode Forward current IDF (25) 50 A

Collector dissipation Pc TBD W

Junction temperature Tj 150

Storage temperature Tstg -55 ~ +150

RJH65D27 specifications(Preliminary)

Symbol Conditions Typ. Unit

VCE(sat) VGE=15V,IC=50A 1.3 V

Cies VGE=0, VCE=25V, f=1MHz (3,050) pF

tf VGE=±15V,IC=50A,RG=10Ω, (120) ns

VF IF=25A (1.55) V

trr IF=25A, diF/dt=300A/µs (75) ns

Tc=25

Low VCE(sat) RJH65D27

PAE-AA-12-0177-1115

1. Features• Trench gate and thin wafer technology (G7H series) • High speed switching• Gate-emitter voltage rating ±30V, Low collector emitter leak current • Pb-free

2. Applications• Current resonance,

Half bridge circuit.• Cook-top by Induction heating• Soft Switching Applications

Tc=25°C

TO-247A

600V IGBT for IH cooktop

VCES(V)

Ic(A)


P/N VCE(sat)

(V) tf(ns) tsc(µµµµs) VF(V) ｔｒｒｔｒｒｔｒｒｔｒｒ(ns) Package WS MP

25 100 typ. Ic(A) typ. Ic(A) min. ｔｔｔｔyp. ｔｔｔｔyp.

RJH60T04DPQ-A0 600 60 30 1.5 30 45 30 ― 1.2 100 TO-247A OK 1Q/13

IHHigh SpeedLow VCE(sat)


Summary: Renesas Power IGBTs

Semiconductor Product Range (600V to 1350V)

Advanced Technologies: Thin Wafer HiGT

Industry standard performance packages

TO247, TO-3P

TO220, LDPak(D2Pak), TO252(D-Pak)

High quality and reliability

Long term availability

PAE-AA-12-0177-1PAE-AA-12-0177-1

Integrated Power Devices for PFC and Power Stage


PAE-AA-12-0177-1PAE-AA-12-0177-1

Integrated Power Devices



OptocouplerOptocouplerOptocouplerOptocoupler

PAE-AA-12-0177-1PAE-AA-12-0177-1

Hig

h S

peed

, Per

form

ance

Fault Detect/Feed-back2.5A,Topt=110 oC

3.3V/15MbpsIF/Icc1.3mA

0.6A/tPHL,LH=0.4usTr./Tr.OutputTopt=110 oC

2.5A/tPHL,LH=0.25usMOS/MOS Output

Topt=110 oC

’11’10 ’12

ISO Amp.:Analog output

’13

20kbps

General SOPLong Creepage

General 110 oCLow Cost(DIP4)

0.6A/125oCPWD150ns

10Mbps 3.3V/5V IF3mA

Fault Detect/Feed-back2.5A,Topt=125 oC

2A Low PowerMOS/MOS/Icc2mA

15M SDIPSSOP4:CTR 200%

2.5A, 14.5mmLong Creepage

ISO Amp. ：：：：Digital output

5Mbps20V,IF3mA

ISO Amp.Gain error 1%

ISO Amp.Gain error 0.5%

10Mbps 125oC

2.5A/125oCPWD75ns

Active Clamp

:MP

Low PowerHigh SpeedHigh Temp.

High VoltageHigh SpeedHigh Temp.

High Accuracy

Optocoupler Development Roadmap

- High Temp., Low Po Consumption -

121

Higher Temp. Lower Po Consumption

>=

©2012 Renesas Electronics Corporation. All rights reserved.

PAE-AA-12-0177-1PAE-AA-12-0177-1122

Tr. Optocoupler & Applications


PAE-AA-12-0177-1PAE-AA-12-0177-1123

4Pin DIPPS25XX Series

Single (DC/AC)Darlington (DC/AC)

4Pin SOPPS27XX Series

(Creepage 5mm)PS23XX Series

(Creepage 8mm)

Darlington (DC/AC)

Single (DC/AC)

4,16Pin SSOP(Pitch 1.27mm)PS28,29 Series

Darlington (DC/AC)

PS2502/05/06-1PS2502/05-4PS2514-1PS2565-1PS2533/35-1PS2561D-1PS2561F-1

PS2703-1,PS270xA-1PS2711/15-1

PS2761B-1 PS2381-1*

PS2702-1PS2733-1

PS280xC-1/-4PS2811/15-1PS291x-1

PS2861B-1

PS2802-1/-4PS2833-1/-4PS2933-1

PS2841-4A,4B(DC)PS2845-4A(AC)

12Pin Multi SSOPPS284X Series(Pitch 0.8mm)

Single (DC/AC)

Single (DC/AC)

Common LeadTr: Common Collector

General, Chip Shrunk20kbpsLarge Input CurrentHigh V CEOSafety Standards110oC

General, Chip ShrunkHigh CTRSafety Standards

110oC (115oC*)

GeneralHigh V CEOFlat Lead

GeneralHigh V CEO

General/ Chip ShrunkHigh CTRFlat LeadSafety Standards

110oC

Tr Photocoupler SeriesDC Input AC Input


PAE-AA-12-0177-1PAE-AA-12-0177-1124

High Temp General Tr. Optocouplers

SSOPSOPDIP

Optimized for >0.4mm Insulation

Part NumberVCEO / Ic / tf

Optimized for >0.4mm InsulationOptimized for >8mm Creepage

PS2861B-170V/50mA/5us5mm Creepage

Topt:110 oC

SOP(LongCreepage)

PS2381-1

80V/50mA/5us

8mm Creepage

Topt:115 oC

PS2561D/DL-180V/50mA/5us

Topt:110 oCPS2561F/FL-1

Topt:110 oC

PS2761B-170V/40mA/5us

Topt:110 oC

PS2561DL1/L2-1

80V/50mA/5us

Topt:110 oC


We are enhancing the product line up of High Temper ature version.

PAE-AA-12-0177-1125

= High Temp Operation & Small PKG =

PS2561D4pin DIP

DC/DC Server,Telecom

110degC Operation Coupler

Power supply trend

PS2761B4pin SOP

4pin SSOP

General-purpose power supply example

PowerSupplyUnit Power

Units

DC/DCConverter

Generalpurpose P.S.DVD,PC,TV

PS2861B

115degC Operation Coupler

PS2381-1

4pin SOP(Long creepage)


PAE-AA-12-0177-1PAE-AA-12-0177-1126

High Speed Optocoupler & Applications


PAE-AA-12-0177-1PAE-AA-12-0177-1127

DIP-8 SO-5 SO-8

PS8501PS8502 PS8101 PS8802-1

PS8802-2PS8821-1PS8821-2

PS9587 PS9117A PS9817A-1PS9817A-2

PS9121 PS9821-1PS9821-2

PS9151 PS9851-1PS9851-2

SDIP-6,8

PS8302

PS9317

14mm

PS9122

Analog

Open Collector

35V

3.3V

5V

3.3V

5V

1Mbps

10Mbps

PS9351

5VTotem Pole PS9123Com

mun

icat

ion

Digital 3.3V, 5V PS9822-1PS9822-2

PS9324

PS8551

PS9551

PS9513 PS9113PS9313

Analog

Digital

35V,2.5ABi-CMOS

Digital

35V,2.0A

5V

5V

>20V

IsolationAMP.

IPM drive

IGBT drive

PS9306PS9307

PS9305

PS9506

PS9505 PS9402

PS9308

35V,0.6A

Mot

or

Driv

e &

Con

trol

PS9303PS9309

SO-16

PS9905

PS9924

High SpeedOptocouplers

*3

*3

*3

*3*3

*2

*2

*2

*2

*2*2 *2

*2

*1)Under Development *2) Planning to change wafer size. *3) Planning to change fabrication plant.

*3 *3*3*3

Speed Output Vcc/V DD

15Mbps

CMOS


PS9124

PAE-AA-12-0177-1PAE-AA-12-0177-1

TA= - 40 to 110oC

5Mbps Low IFLH IPM Driver

Features Characteristics

Output goes high when input becomes high.

Package & Pin Connection

Applications

Active High Output TypeFA Market, IMP Driver

- PS9309L/L2 -

PS9309L（（（（SDIP-6））））

Low Input Current: IFLH=3mA (Max.)Low Supply Current:IccL= 3mA(Max.)High Speed: tPLH/HL= 250ns(Max.)High CMR: CM H/CML=15kV/us (Min.)

Creepage DistancePS9309L : 7mm, PS9309L2 : 8mm

Ta=25oC

MIN.

Viso

Vcc

IFLH

IccH

tPHL

tPLH

tPLH - tPHL

CMH/CML

TYP. MAX.Characteristics

5

-0.5 20

3

3

250

250

15

Unit

kV

V

mA

mA

ns

ns

ns

Items Remark

Low SupplyCurrent

High Speed

kV/µs

IccL 3 mA

220

High CMR@VCM=1.5kV,Ta=25

Low IFLH

－

－

－

－

－

－

－

－

－

－

－

－－

－

－

－

－

－

－


PAE-AA-12-0177-1PAE-AA-12-0177-1

TA= - 40 to 100oC

Long Creepage 15Mbps Photocoupler



High CMR 15kV/µµµµs (Min.)

Low IFHL 1.9mA (Typ.)

- PS9351(SDIP-6) -

PS9351L（（（（SDIP-6））））

Long Creepage DistancePS9351L : 7.0mmPS9351L2 : 8.0mm

Ta=25oC

MIN.

Viso

VDD

IFHL

tPHL

tPLH

tPLH - tPHL

CMH/CML

TYP. MAX.Characteristics

5

4.5 5.5

5

5

60

60

15

Unit

kV

V

mA

mA

ns

ns

ns

Items Remark

kV/ms

IDD

30@VCM=1.5kV,Ta=25oC－－－－

－－－－

35

35

－－－－

1.9

5

2

－－－－

－－－－

－－－－

－－－－

－－－－

－－－－

－－－－

Small PWD (tpLH-tpHL) 30ns(Max.)

High Breakdown Voltage 5kVr.m.s.

CMOS output

High Speed (tpLH,tpHL) 60ns(Max.)


PAE-AA-12-0177-1PAE-AA-12-0177-1130

Main spec.

CharacteristicsPKG Specification

Schedule

PKG

Spec. unit

BV

1600VIORM

Ta

Tstg

–40 to +110

–55 to +125

7.5 KVr.m.s

oC

Vpeak

Creepagedistance

mm14.5

Renesas

Long creepage distance & Small PKG

Creepage

Distance

13mm

14.5mm

A Company

60%

MP

- PS9924 (10Mbps) -

Long creepage distance 14.5mm coupler

MIN.

Viso

VCC

IFHL

ICCL

tPHL

tPLH

PWD

CMH/CML

TYP. MAX.

7.5

2.7

2

5.5

5

6 / 7 10

40 / 40 100

50 / 45 100

15

kV

V

mA

mA

ns

ns

ns

- -

-

-

-

-

-

-

-

20

5 35

kV/µµµµs

Ta=25oC

@VCM=1.5kV,Ta=25oC

High Speed

Lower PWD

High CMR

TA= - 40 to 110oCCharacteristics

UnitItems Remark13.6

6.7


13.8

oC

(@3.3V/@5V)

(@3.3V/@5V)


Gate Drivers

Features and examples

Application: Motor control

“Intelligent” Gate Driver PS9402

Switching Speed

* 6 gate drivers for one motor control

Optocoupler-IGBT driver,

The “perfect couple”

PAE-AA-12-0177-1PAE-AA-12-0177-1

MOS-MOSOutput

TA=-40 to 110 οοοοC

Pin Connection, Pkg Image

MIN.

PWD

VCC-VEE

ICCH/L

IFHL

CMH/CML

TYP. MAX.

Characteristics

-

0-

35

2.5

2.0 3.0

-

Unit

V

AmA

mA

kV/µµµµs

Item Notes

2.0

25

-

-

-

- 0.1

Viso - Vr.m.s.5000 - @60sec, TA=25οοοοC

VCM=1.5kV,TA=25οοοοC

tPLH/tPHL - µµµµs0.18 0.25

µµµµs

IoL/oH(Peak)

tr/tf - 50 - ns

-

-

5.0

PS9305L, PS9505/L3/L1/L2

Package: SDIP-8, DIP-8(7mm, 8mm Creepage)

Large Peak Output Current:2.5A Max., 2.0A Min.

High Speed Switching:tPLH/tPHL = 0.25 µµµµs Max.

UVLO (Under Voltage Lock Out)High CMR Voltage:

CMH, CML= +/- 25kV/µµµµs Min.

2.5A MOS Output IGBT Drive Coupler


PS9505(DIP-8)

PS9305(SDIP-8)


PAE-AA-12-0177-1133


Pin Connection, Pkg Image

MIN.

PWD

VCC-VEE

ICCH/L

IFHL

CMH/CML

TYP. MAX.

Characteristics

-

0-

35

0.6

- 3.0

-

Unit

V

AmA

mA

kV/µµµµs

Item Notes

-

25

-

-

-

- 0.25



tPLH/tPHL 0.05 µµµµs0.18 0.4

µµµµs

IoL/oH(Peak)

tr/tf - 50 - ns

-

-

7.0

- PS9306L/L2, PS9506/L3/L1/L2 -

Peak Output Current:0.6A Max., 0.4A Min.

High Op. Temp.: T A= 110oC Max.Supply Current: Icc= 3mA Max.High Speed Switching:

tPLH/tPHL = 0.4 µµµµs Max.PWD = 0.25µµµµs Max.

High CMR Voltage:CMH, CML= +/- 25kV/µµµµs Min.

0.6A Gate Drive Coupler


PS9506(DIP-8)

PS9306(SDIP-6)


PAE-AA-12-0177-1PAE-AA-12-0177-1

Application :Inverter, AC Servo (IGBT Gate Drive)

High Operation Temperature :TA = 125oC(Max.)

Low Supply Current: Icc = 2mA (Max.) High Speed :tPLH/tPHL = 250ns(Max.) Low PWD : PWD = 150ns(Max.) Operating Frequency : f= 250kHz(Min.) High CMR Voltage:

CMH, CML = +/- 50kV/µµµµs(Min.)


PS9307L(SDIP-6)

1. Anode2. NC3. Cathode4. VEE

5. VO

6. VCC

- PS9307L/L2 -

ns30

kV/µs50

ns150

ns 2500.11

mA2.01.0

A0.6

V350

kV5

MAX.TYP.MIN.

mA5.02.5

Viso

VCC-VEE

IOL/IOH(peak)

ICCH/ICCL

IFLHtPLH/tPHL

PWD

tr/tf

CMH/CML

Ta=25oC

Ta=25oC

Ta=25oC

－－－－

－－－－

－－－－－－－－

－－－－－－－－

－－－－

－－－－

－－－－

－－－－

－－－－

－－－－－－－－

－－－－－－－－@VCM=1.5kV,Ta=25oC

f 250 －－－－－－－－ kHz Ta=25oC

TA= - 40 to 125oC

CharacteristicsUnitItems Remark


Creepage DistancePS9307L : 7mm, PS9307L2 : 8mm

Low Current

High Speed

Lower PWD

High CMR

0.6A High Temp. & High Speed IGBT Drive Coupler


PAE-AA-12-0177-1PAE-AA-12-0177-1

Pin Connection, PKG Image

MIN.

PWD

VCC-VEE

ICCH/L

IFLH

CMH/CML

TYP. MAX.

Characteristics

0-

35

2.0

1.2 2.0

-

Unit

V

AmA

mA

kV/µµµµs

Item Notes

1.8

25

-

-

-

- 0.1



tPLH/tPHL µµµµs0.18 0.25

µµµµs

IoL/oH(Peak)

tr/tf - 50 - ns

-

-

5.0

Package: 6Pin - SDIP(L2: 8mm Creepage)

Large Peak Output Current:2.0A Max.

High Speed Switching:tPLH/tPHL = 0.25 µµµµs Max.

UVLO (Under Voltage Lock Out)High CMR Voltage:

CMH, CML= +/- 25kV/µµµµs Min.

2.0A 6Pin-SDIP IGBT Drive Coupler


PS9308L/L2(SDIP-6) 1. Anode

2. NC3. Cathode4. VEE

5. VO

6. VCC

- PS9308L/L2 -

-


-


PAE-AA-12-0177-1

- Pin Connection

2.5A Intelligent Gate Drive Coupler

1

2

3

4

5

6

7

8 9

16

15

14

13

12

11

10PS9402(SO16)

- UVLO Func. with Hysteresis- Desaturation Detection

(Error Signal Detection)- Miller Clamp Func .- ‘Soft’ IGBT Turn off- Fault Reset by next cycle of IGBT turn

on (Short Detection Reset & Reboot)

- MOS–MOS Output

oC

BV

Ta – 40 to +110

5000 Vr.m.s

VccIOH/IOL (PEAK)

0 to 33 V

2.5 A

(Ta= -40 to 110oC, Vcc=15 to 30V)

VOLVOH

UVLO +/-

CMR(H/L)

3.0 mA

ns

MIN. TYP. MAX.

11.0

25

2.00.50.1

-

IF=10mA,Rg=10ΩΩΩΩ,Cg=10nF

VCM=1500VTa=25oC- kV/µµµµs-

Vcc-2.0

ICCH / L

IFLHtPLH/HLPWD

nsmAV

VVVcc-1.3

9.8 13.5 12.312.3 11.0

Io=-100mA

Io=100mA

Vo=5V

2.0 5.0100 180 200

100--

-

--

FeaturesAbsolute Maximum Ratings

Target Spec. (Ta=25oC)

Isolation Voltage

Operating Ambient Temp.

Supply Voltage

Item Ratings UnitSymbol

Item CharacteristicsUnit Condition

- PS9402 -

Peak Output Current

Specifications

136 © 2013 Renesas Electronics Europe. All rights reserved.

PAE-AA-12-0177-1PAE-AA-12-0177-1

CharacteristicsPKG Specification

Schedule

2.5A IGBT driver

MP

- PS9905 (IGBT driver) -

Long creepage distance 14.5mm coupler

TA=-40 to 110οοοοC

MIN.

PWD

VCC-VEE

ICCH/L

IFLH

CMH/CML

TYP. MAX.

Characteristics

-

0

-

35

2.5

1.4/1.3 3.0

-

Unit

V

A

mAmA

kV/µµµµs

Item Notes

2.9

25

-

-

-

- 0.075

Viso - kV7.5 - @60sec, TA=25oC

VCM=1.5kV,TA=25oC

tPLH/tPHL - µµµµs0.09/0.1 0.15

µµµµs

IoL/oH(Peak)

tr/tf - 50 - ns

-

-

6.9

Main spec.

Spec. unit

BV

1600VIORM

Ta

Tstg

–40 to +110

–55 to +125

7.5 KVr.m.s

oC

Vpeak

Creepagedistance

mm14.5

oC

PKGRenesas

Long creepage distance & Small PKG

Creepage

Distance

13mm

14.5mm

A Company

60%

13.6

6.7

13.8


PAE-AA-12-0177-1PAE-AA-12-0177-1

IGBT drive couplers have integrated push-pull current driver• No external push-pull drive stage required • Smaller board space• Lower costAdditional functions can be integrated

Application: Motor Control

Typical application to drive MOSFET / IGBT gate directly

6 IGBT drive couplers are required for 3-phase motor control

138

1 2 3 4 5 6


PAE-AA-12-0177-1PAE-AA-12-0177-1

+5V

3-phase output

+HV DC (P line)

-HV DC (N line)

3-phase output

+HV DC (P line)

-HV DC (N line)

0.1uF

RG

Vcc=18V

1

2

3

4

5

6

7

8 9

16

15

14

13

12

11

10

VLED

DESAT

Vcc2

Vo

VEEK

A

A

K

Vs

FAULT

Vcc1

Vs

VEE

VCLAMP

1

2

3

4

5

6

7

8 9

16

15

14

13

12

11

10

VE

VEEK

A

A

K

Vs

FAULT

Vcc1

Vs

VEE

VCLAMP

CBLANK

DDESAT

100ohm

RLED

+5V

RF

CF

0.1uF

2.1kΩ

15pF

100pFRDESAT

Motor control design with “intelligent” gate driver

IGBT drive signal input

Fault output

Vo

Return pathIC2 LED2 IC1/B

LED1 IC1 /AForward path

PS9402 is a bidirectional optocoupler. It consists of 4 chips in one package:• Microcontroller power stage : LED1 and IC1• Power stage microcontroller : IC1/LED2 and IC2

PS9402 has several integrated IGBT protection functions: UVLO, DESAT, Active Miller Clamp


PAE-AA-12-0177-1PAE-AA-12-0177-1140

Our Advantages for Customers

You can find out BEST Products, Qualities ,Supports and Solutions !

2. Total Support of Opto-couplers- Offering Transistor-Optocoupler and High Speed Optocouplers- Small PKG Available 4Pin DIP-> SOP,SSOP,Flat Lead, Quad

3. Innovation for Your Next Generation Products - Offering High temperature & Low Power Consumption- Offering Lead Free Products


1. No.2 Opto-coupler Maker - Offering High Quality Products with Competitive Pr ice. - Keep Improving Quality, Cost and Delivery.

PAE-AA-12-0177-1PAE-AA-12-0177-1141

WWW for Opto Devices

Please access http://www.renesas.com/products/opto/index.jsp


© 2012 Renesas Electronics Corporation. All rights reserved. PAE-AA-12-0049-1143

Contents

Features of Fast Recovery Diodes (FRD)

Fast Recovery Diodes (FRD) Development plan

Existing Product Line-ups Introduction

Low VF and Ultra Fast Recovery series

Product naming rule


0

50

100

0.0 1.0 2.0 3.0

Feature of FRD

VFｔｒ

ｒｔｒ

ｒｔｒ

ｒｔｒ

ｒ

Ultra Fast recovery(RJU605 series)

Low ＶＶＶＶF(RJU60C series)

1. High efficiency

Low forward voltage ⇒⇒⇒⇒RJU60C series

RJU60C6SDPK-M0 : 600V, 50A, VF=1.4V, TO-3PSG

Ultra high speed recovery time and soft recovery

characteristics

RJU ∗∗∗∗ ∗∗∗∗ 5 series(300/430/600V, trr=25ns)

2. High reliability

Low reverse current


2007 2008 2009 2010 2011 2012 2013

High speed trr

Hig

h P

erf

orm

ance,

Hig

h E

ffic

iency

2014

Year

U-FRD600V

330-630V

Low VF series

FRD Development plan

360-600V

U-FRD-II

FRD

Ultra high speed trr series

SiC-SBD

1,200V

U-FRD-II

High voltage

U-FRD’s features• Low forward voltage,

ultra high speed performance• High reliability due to leak current• Soft recovery characteristics

(P/N) RJU**5*

(P/N) RJU60C*

Soft recovery characteristics

Soft recovery characteristics


Existing Product Line-ups Introduction:

Low VF and Ultra Fast Recovery series


Comparison of Output characteristics for Low VF series

Forward voltage VF [V]

Forw

ard

curr

ent

IF

[A]

Tc = 25°C

RJU60C3TDPP-EJ

100

10

1

0.10 1.0 2.0 3.0

Current rating


RJU6052Qrr=4.0nC

Reverse recovery characteristics for FRD

Qrr

RJU60C3Qrr=48nC

Measurement conditionIF=2.0Adi/dt=20A/µsTc=25

Reduced 90%

RJU60C3trr=50ns

80ns/div

RJU6052trr=25ns

80ns/div

Qrr

Soft recovery

Soft recovery


Application example of FRD

Motor

<Inverter>

<PFC>

Opto coupler

MCU

PWM

PFC-IC

DiodesRJU60Cx / RJU605x series

DiodesRJU60Cx / RJU605x series

PFC < Full switching type >

PS9306xx, PS9506xx

PS9305xx, PS9505xx


(Tc=25°C)

Product Line-ups Introduction (2)

1-chip type (RJU60C∗ series)

2-chip type (RJU60C∗W series)

-- Low VF series Line-up --

(Tc=25°C)

TO-220FP-2L TO-3PSGLDPAK(S)

1 2 3

4

2

1

1 3

2,4

TO-220FL

1chip type12

TO-252

4

12 3

1 3

2,4

1 3

2,44

12

3

1 3

2,4

2chip type 12

3

Tc=25 Tc=100

LDPAK(S) RJU60C6SDPE 600 50 25 1.4 100 - OKRJU60C2TDPP-EJ 600 15 8 1.4 70 - OKRJU60C3TDPP-EJ 600 30 15 1.4 90 - OKRJU60C6TDPP-EJ 600 50 25 1.4 100 - OKRJU60C2SDPD-E0 600 15 8 1.4 70 - OKRJU60C3SDPD-E0 600 30 15 1.4 90 - OK

TO-3PSG RJU60C6SDPK-M0 600 50 25 1.4 100 - OK

IF [A]P/N

VF(typ)[V]

trr (typ)[ns]

PKGVAK[V)

WS MP

TO-220FP-2L

TO-252

1 3

2,4

2chip type

Tc=25 Tc=100

TO-220FL RJU60C3WDPP-M0 600 60/30 30/15 1.4 90 OK 4Q/'12RJU60C3WDPK-M0 600 60/30 30/15 1.4 90 OK Sep '12RJU60C6WDPK-M0 600 100/50 50/25 1.4 100 OK Sep '12

TO-3PSG

WS MPPKG P/NVAK[V)

IF [A] VF(typ)[V]

trr (typ)[ns]


-- Ultra Fast Recovery series Line-up --

1-chip type (RJU∗∗5∗ series)

2-chip type (RJU∗∗5∗W series)

(Tc=25°C)

(Tc=25°C)

1

TO-252

1 2 3

4

TO-220FP-2L

2

1 2 3

4

TO-3PSG

LDPAK(S)

1 2 3

4

2

1

1 3

2,4

1 3

2,4

3

2,4

1

TO-220FL

1

2

3

2 3

1

2,4

3

2chip type

2chip type

1chip type

Tc=25 Tc=100

RJU3051SDPE 360 10 5 1.4 23 - OKRJU4351SDPE 430 10 5 1.6 23 - OKRJU4352SDPE 430 20 10 1.5 23 - OKRJU4351TDPP-EJ 430 10 5 1.6 23 - OKRJU4352TDPP-EJ 430 20 10 1.5 23 - OKRJU6052TDPP-EJ 600 10 5 2.5 25 - OKRJU6053TDPP-EJ 600 20 10 2.5 25 - OKRJU6054TDPP-EJ 600 30 15 2.5 25 - OKRJU3052SDPD-E0 360 20 10 1.4 23 - OKRJU4352SDPD-E0 430 20 10 1.5 23 - OKRJU6052SDPD-E0 600 10 5 2.5 25 - OK

TO-3PSG RJU6054SDPK-M0 600 30 15 2.5 25 - OK

MPPKG P/NVAK[V)

IF [A] VF(typ)[V]

trr (typ)[ns]

WS

LDPAK(S)

TO-220FP-2L

TO-252

Tc=25 Tc=100

TO-220FL RJU6053WDPP-M0 600 20 10 2.5 25 OK 4Q/'12RJU6053WDPK-M0 600 20 10 2.5 25 OK Aug '12RJU6054WDPK-M0 600 30 15 2.5 25 OK Aug '12

TO-3PSG

PKG MPP/NVAK[V)

IF [A] VF(typ)[V]

trr (typ)[ns]

WS

Product Line-ups Introduction (3)


Naming Rule for IGBT/Power MOS FET

R J H 60 F7 A D PK - XX

(1) R: Renesasa’s Semiconductor's (Fixed)(2) J: Power device (Fixed)(3) H: Product series

K: Power MOS/Nch P: IGBT H: IGBT + Diode U: Diode

(4) 60: Voltage class30: 300-399V , 40: 400-499V , 60: 600-699V, 1A: 1000-1099V, 1B:1100-1199V, 1C: 1200-1299 V, 1D: 1300-1399V

(5) F7: Serial No (2-digit)0X, 6X, 8X, DX, FX,--- There is no special meaning for 0,6,8,D,F—

(6) A: Base chip (in this case: 60F7) or FRD revision (1 alphabet letter A,B--- )Most case, it is not used

(7) D: Quality Characteristics (1 letter)D: For Industrial use, A : Consumer

(8) PK: Package typePK: TO-3P, PP:TO-220FN/TO-220FL, PE:LDPAK-S1 PM: TO-3P FMPD: MP-3A, JE: TO-92/TO-92M, PQ:TO-247

(9) Sub code

(1) (2) (3) (4) (5) (6) (7) (8) (9)


Support tools on line / off line


Available tools and info

Datasheets, Cross reference

SPICE models (for selected devices)

Selection guide for IGBT & SJMOS and

optocoupler-driver

Parametric search

Online selection tools

Extranet (news letter, presentations)

Sample stock

Datasheets SPICE models Selection guides

Fairs: electronica, EW, PCIM

SUPPORT INFRASTRUCTURE

154

http://www.renesas.eu/products/discrete/index.jsp?campaign=tb_prod


New on line tools

Device selection by topology

Collaboration with WEB simulator


Select IGBT/SJ-MOS using design topologies Simulate waveforms, efficiency, PCB temp. , etc.

155

http://www.renesas.eu/products/discrete/peer/Designtopologies.jsp


Cross reference search

http://www.renesas.eu/req/other_product_search.do?event=otherProductSearch



SUPPORT INFRASTRUCTUREhttp://www.renesas.eu/req/parametric_search.do?event=init


New Navigation flow chart Product selection

http://www.renesas.eu/products/discrete/peer/guide.jsp



http://www.renesas.eu/products/discrete/peer/Designtopologies.jsp

New Tool: Device selection by topology / applications



Topology details

Product proposals


Avnet-Israel - RENESAS Electronics New Product …...PAE-AA-12-0177-1 Frequency f(Hz) 10K 20K 50K...

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