Application Note 5 NJG1133MD7 2.1GHz / 800MHz / 1.8GHz ... · The characterisitics of...

Application Note 5 NJG1133MD7

1/19

2.1GHz / 800MHz / 1.8GHz Bands Application

5-1 Summary

The characterisitics of 2.1GHz/800MHz/1.8GHz bands have evaluated as follows. The evaluation

circuit structure and measured data are reviewed.

5-2-1 Measurement data of assembled evaluation board

DC Characteristics

General conditions : VDD=2.8V, Ta=+25oC

LNA Supply Voltage VDD 2.8 V

Control Voltage 1 (High) VCTL1(H) 1.8 V

Control Voltage 1 (Low) VCTL1(L) 0 V





LNA Operating Current 1(2.1GHz High Gain Mode)LNA Operating Current 2(800MHz High Gain Mode)LNA Operating Current 3(1.9GHz High Gain Mode)LNA Operating Current 4(Low Gain Mode)

Control Current 1 ICTL1 VCTL1=1.8V 5.0 uA



VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

VCTL3=0V

IDD1

IDD2

IDD3

IDD4

Parameter Symbol Condition

VCTL1=0V, VCTL2=0V, VCTL3=1.8V

Units

2.51 mA

Measurement

data

32.2

2.43

mA

mA

uA

2.54

1.8 2.51

2


RF Characteristics 1 (2.1GHz Band High Gain Mode)

Small Signal Gain 1Exclude Input&Output PCB,

Connector Losses (0.45dB)Gain 1 15.7~16.0 dB

Isolation 1Exclude Input&Output PCB,

Connector Losses (0.45dB)ISO 1 -29.9~-29.3 dB

Noise Figure 1Exclude PCB, Connector

Losses (0.09dB)NF 1 1.29~1.30 dB

Input Power 1dB

Compression 1P-1dB(IN)_1 -9.6~-9.2 dBm

Input 3rd Order

Intercept Point 1

f1=fRF, f2=fRF+100kHz,

Pin=-30dBmIIP3H1_1 -0.3~-0.1 dBm

RF IN VSWR 1 VSWRi_1 1.38~1.63 -

RF OUT VSWR 1 VSWRo_1 1.86~1.92 -

RF Characteristics 2 (2.1GHz Band Low Gain Mode)


Connector Losses (0.45dB)Gain 2 -3.6~-3.5 dB




Losses (0.09dB)NF 2 3.4~4.1 dB

Input Power 1dB

Compression 2P-1dB(IN)_2 +14.0~+14.3 dBm

Input 3rd Order

Intercept Point 2


Pin=-16dBmIIP3_2 +10.8~+11.8 dBm



UnitsParameter Condition SymbolMeasurement

Data

General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=2110~2170MHz,

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter SymbolCondition

General condition : VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=2110~2170MHz,

UnitsMeasurement

Data



3/19


RF Characteristics 3 (800MHz Band High Gain Mode)


Connector Losses (0.22dB)Gain 3 15.9~16.0 dB




Losses (0.06dB)NF 3 1.31~1.44 dB

Input Power 1dB

Compression 3P-1dB(IN)_3 -9.4~-9.3 dBm

Input 3rd Order

Intercept Point 3


Pin=-30dBmIIP3H1_3 -2.8~-2.1 dBm



RF Characteristics 4 (800MHz Band Low Gain Mode)


Connector Losses (0.22dB)Gain 4 -3.1~-3.0 dB




Losses (0.06dB)NF 4 3.0~3.9 dB

Input Power 1dB

Compression 4P-1dB(IN)_4 +17.1~+17.7 dBm

Input 3rd Order

Intercept Point 4


Pin=-20dBmIIP3_4 +13.8~+14.5 dBm




Data

General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=869~900MHz,



General condition : VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=869~900MHz,

UnitsMeasurement

Data


4


RF Characteristics 5 (1.8GHz Band High Gain Mode)

Small Signal Gain 5Exclude Input&Output PCB, Connector

Losses (0.41dB)Gain 5 15.7 ~ 15.9 dB


Losses (0.10dB)NF 5 1.35 ~ 1.41 dB

Input Power 1dB

Compression 5P-1dB(IN)_5 -7.8 ~ -7.1 dBm

Input 3rd Order

Intercept Point 5


Pin=-30dBmIIP3_5 +1.0 ~ +1.8 dBm

RF IN VSWR 5 VSWRi_5 1.76 ~ 1.93 -

RF OUT VSWR 5 VSWRo_5 1.78 ~ 1.79 -

RF Characteristics 6 (1.8GHz Band Low Gain Mode)

Small Signal Gain 6Exclude Input&Output PCB, Connector

Losses (0.41dB)Gain 6 -4.0 ~ -3.9 dB


Losses (0.10dB)NF 6 3.9 ~ 4.7 dB

Input Power 1dB

Compression 6P-1dB(IN)_6 +17.4 ~ +17.7 dBm

Input 3rd Order

Intercept Point 6


Pin=-16dBmIIP3_6 +13.3 ~ +14.1 dBm

RF IN VSWR 6 VSWRi_6 1.67 ~ 1.72 -

RF OUT VSWR 6 VSWRo_6 2.14 ~ 2.24 -

General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1805~1880MHz,

Units


General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1805~1880MHz,

Measurement

Data




Data

2.7

2.7


5/19

5-3 Pin configuration

5-4 Truth table

VCTL terminal function

VCTL1, VCTL2：Band Select (2.1GHz or 800MHz or 1.8GHz)

VCTL3：RX ATT Select (High Gain mode or Low Gain mode)

13

RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic Circuit

RFOUT3

RFIN3

RFOUT1

1.8GHz Band

Bias Circuit

Bias Circuit

Bias Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND 2 4 1 3

10 8 11 9 GND GND

VCTL1 VCTL2 VCTL3

(Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass

L L L OFF ON OFF ON OFF ONL L H ON OFF OFF OFF OFF OFFH L L OFF ON OFF ON OFF ON

H L H OFF OFF ON OFF OFF OFFL H L OFF ON OFF ON OFF ONL H H OFF OFF OFF OFF ON OFFH H L OFF ON OFF ON OFF ON

H H H OFF OFF OFF OFF ON OFF

Control Voltage State

2.1GHz Band 800MHz Band 1.9GHz Band1.8

6

5-5-1 Typical characteristics (2.1GHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout vs. Pin(f=2140MHz)

Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Gain, IDD vs. Pin(f=2140MHz)

0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

2.1GHz @High Gain

Pout, IM3 vs. Pin(f1=2140MHz, f2=f1+100kHz)

Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-0.1dBm

IM3

12

13

14

15

16

17

18

19

20

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @High Gain

OIP3, IIP3 vs. frequency(f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm)

-2

-1

0

1

2

3

4

5

6

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @High Gain

NF, Gain vs. frequency(f=2.0~2.3GHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (GHz)

Gain

NF

NF (dB)

(Exclude PCB, Connector Losses)

0

5

10

15

20

0 5 10 15 20

2.1GHz @High Gain

k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor


7/19


S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

8

5-5-3 Typical characteristics (2.1GHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+14.1dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+14.1dBm

IDD (uA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

2.1GHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+11.2dBm

IM3

6

7

8

9

10

11

12

13

14

2.1 2.12 2.14 2.16 2.18 2.2

2.1GHz @Low Gain


6

7

8

9

10

11

12

13

14

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

2 2.05 2.1 2.15 2.2 2.25 2.3

2.1GHz @Low Gain


-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (GHz)

Gain

NFNF (dB)


0

5

10

15

20

0 5 10 15 20

2.1GHz @Low Gain


frequency (GHz)

k factor


9/19


S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=0V, VCTL3=0V

10

5-5-5 Typical characteristics (800MHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

800MHz @High Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=-9.3dBm

0

5

10

15

20

-40 -30 -20 -10 0 10

800MHz @High Gain


0

2

4

6

8

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=-9.3dBm

IDD (mA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

800MHz @High Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=-2.1dBm

IM3

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @High Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm)

-4

-3

-2

-1

0

1

2

3

4

frequency (MHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

750 800 850 900 950 1000

800MHz @High Gain

NF, Gain vs. frequency(f=750~1000MHz)

4

6

8

10

12

14

16

18

20

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)


0

5

10

15

20

0 5 10 15 20

800MHz @High Gain


frequency (GHz)

k factor


11/19

5-5-6 Typical characteristics (800MHz Band High Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

12

5-5-7 Typical characteristics (800MHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


Pin (dBm)

Pout

Pout (dBm)

P-1dB(IN)=+17.7dBm

-12

-10

-8

-6

-4

-2

0

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


25

30

35

40

45

50

55

Pin (dBm)

Gain

Gain (dB)

P-1dB(IN)=+17.7dBm

IDD (uA)

IDD

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

800MHz @Low Gain


Pin (dBm)

Pout

Pout, IM3 (dBm)

IIP3=+14.5dBm

IM3

9

10

11

12

13

14

15

16

17

860 870 880 890 900 910

800MHz @Low Gain

OIP3, IIP3 vs. frequency(f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm)

9

10

11

12

13

14

15

16

17

frequency (MHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

750 800 850 900 950 1000

800MHz @Low Gain

NF, Gain vs. frequency(f=750~1000MHz)

-14

-12

-10

-8

-6

-4

-2

0

Gain (dB)

frequency (MHz)

Gain

NF

NF (dB)


0

5

10

15

20

0 5 10 15 20

800MHz @Low Gain


frequency (GHz)

k factor


13/19

5-5-8 Typical characteristics (800MHz Band Low Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

14


Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=-7.1dBm

Pout

Band3(1.7GHz) @High Gain

Pout vs. Pin(f=1842.5MHz)

0

5

10

15

20

0

2

4

6

8

-40 -30 -20 -10 0 10

Gain (dB)

IDD (mA)

Pin (dBm)

Gain

IDD


Gain, IDD vs. Pin(f=1842.5MHz)

P-1dB(IN)=-7.1dBm

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3


Pout, IM3 vs. Pin(f1=1842.5MHz, f2=f1+100kHz)

IIP3=+1.4dBm

10

11

12

13

14

15

16

17

18

1.80 1.82 1.84 1.86 1.88 1.90



-2

-1

0

1

2

3

4

5

6

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3 IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

4

6

8

10

12

14

16

18

20

1.70 1.75 1.80 1.85 1.90 1.95 2.00

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain




0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor


15/19


Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

16


Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

Pout (dBm)

Pin (dBm)

P-1dB(IN)=+17.6dBm

Pout

Band3(1.7GHz) @Low Gain

Pout vs. Pin(f=1842.5MHz)

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3


Pout, IM3 vs. Pin(f1=1842.5MHz, f2=f1+100kHz)

IIP3=+13.5dBm

7

8

9

10

11

12

13

14

15

1.8 1.82 1.84 1.86 1.88 1.9



9

10

11

12

13

14

15

16

17

frequency (GHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

-14

-12

-10

-8

-6

-4

-2

0

1.70 1.75 1.80 1.85 1.90 1.95 2.00

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain




0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor

-25

-20

-15

-10

-5

0

0

40

80

120

160

200

-40 -30 -20 -10 0 10 20

Gain (dB)

IDD (uA)

Pin (dBm)

Gain

IDD


Gain, IDD vs. Pin(f=1842.5MHz)

P-1dB(IN)=+17.6dBm


17/19


Condition: Ta=+25oC, VDD=2.7V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

18

5-6 Application circuit

Parts ID Comments

L1, L2, L4 ~L9 MURATA (LQP03T Series)

L3 TDK (MLK0603 Series)

C1~C5 MURATA (GRM03 Series)

(Top View)

RF OUT3 (1.8GHz )

RF OUT2 (2.1GHz)

RF OUT1 (800MHz)

V CTL 3=0 or 1.8V (RX ATT)

V CTL 2=0 or 1.8V (Band Sel2)

V CTL 1=0 or 1.8V (Band Sel1)

RF IN3 (1.8GHz)

RF IN2 (2.1GHz )

RF IN1 (800MHz)

13 RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic Circuit

RFOUT3

RFIN3

RFOUT1

1.8GHz Band Bias

Circuit

Bias Circuit

Bias Circuit

GND

2.1GHz Band

800MHz Band

6

5

7

14

12

13

GND 2 4 1 3

10 8 11 9 GND GND

L1 12nH

L2 8.2nH

L3 10nH

L4 2.4nH

L5 1.6nH

L6 2.4nH

L7 3.3nH

L8 1.1nH

L9 3.0nH

V DD =2.7V

C1 2.0pF

C2 2.0pF

C3 0.01uF

C5 0.01uF

C4 2.0pF

Parts List


19/19

5-7 Evaluation board

(Top View)

RF IN2 (2.1GHz)

VDD

VCTL1

RF IN1 (800MHz)

RF OUT1 (800MHz)

RF OUT3 (1.8GHz)

VCTL2

RF IN3 (1.8GHz)

VCTL3

RF OUT2 (2.1GHz)

VDD

L1

L2

L3 L5

L4

L6 L8

L7

L9

C1

C2

C3

C5 C4

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)

PCB SIZE=35.4mm x 17.0mm

CAUTION

In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.

Application Note 5 NJG1133MD7 2.1GHz / 800MHz / 1.8GHz ... · The characterisitics of...

Documents

Transcript of Application Note 5 NJG1133MD7 2.1GHz / 800MHz / 1.8GHz ... · The characterisitics of...