Advancements in Acoustic Micro-Imaging - SMTAAdvancements in Acoustic Micro-Imaging Tuesday October...
Transcript of Advancements in Acoustic Micro-Imaging - SMTAAdvancements in Acoustic Micro-Imaging Tuesday October...
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Central Texas Electronics Association
Advancements in
Acoustic Micro-ImagingTuesday October 11th, 2016
A review of the latest advancements in Acoustic Micro-Imaging for
the non-destructive inspection of semiconductors devices and
microelectronic packaging for defect and flaw detection.
Speaker: Jack H. Richtsmeier
Sonoscan, Inc.
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OVERVIEW
Acoustic Micro Imaging (AMI) is an established non-destructive inspection technique
that applies ultrasound for the inspection of microelectronic packaging and
semiconductor devices for bond assessment, defect or flaw detection and material
characterization.
Recent advancements and new developments have expanded the role of AMI for
semiconductor, MEM’s and microelectronic device inspection, including the following:
Very High Frequency Transducers
Waterfall & Water PlumeTM
3-D Imaging (Virtual Rescan Mode (VRMTM))
Frequency Domain Imaging (FDITM)
Micro-slicing (SonolyticsTM)
Integral Mode Imaging
Surface profilometry (Acoustic Surface Flatness (ASFTM))
Subsurface profilometry (Profile ModeTM)
Multi-layer analysis (SonosimulatorTM)
This presentation will cover these latest advancements through examples and case
studies depicting a variety of advanced packaging, wafer and MEM’s applications.
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From the
lab......
….....to
the fab.APPLICATIONS
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From the
lab......
….....to
the fab.EQUIPMENT
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C-Mode Scanning Acoustic Microscope
C-SAM Gen6 The Latest Generation
of C-SAM Technology
Sonolytics/Polygate
Windows7(targeting Windows10 in 2017)
Plumbed for water
management
Class 1000
Cleanroom ready
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Theory of Operation
Input Output (A-scan & Image)
XYZ Scan MotionWater
Tank/Bath
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C-scan C-mode Interface Scan Technique
Die face to mold compound interface scan
Die face & lead frame to mold compound interface scan
Mold compound bulk scan
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^ Low to High Frequency / 5 to 100 MHz
^ 30 - 100 MHz
THRU-ScanTM
v Very High Frequency / 230, 300 & 400 MHz
Advancements in Transducer Technology
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Beam from Focused Transducer
Focal plane
Spot size
The energy field is an hourglass
shaped beam that narrows to
the spot size at the waist
Depth of Field
2#
#
#
1.7Z)( field ofDepth
22.1707.0X)( Resolution
mmin (MHz)Frequency
s)(mm/Velocity
Diameter
length FocalF
F
F
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Very High FrequencyLow Frequency
Rule of thumb:
Ultra/Very High Frequency (230, 300 & 400 MHz)
(ex. flip chip bump, bonded wafer, MEMs & stacked die)
High Frequency (100 – 180 MHz) (ex. uBGA, TSOP,
hybrids, flip chip under fill, bonded wafer and
capacitors)
Low Frequency (10 - 50 MHz)
(ex. BGA, PLCC, PQFP, TSOP and capacitors)
1. Higher resolution
* shorter wavelength
* smaller spot size
2. Shorter focal length
3. Less penetration
1. Lower resolution
* longer wavelength
* larger spot size
2. Longer focal length
3. Greater penetration
Transducers
~30 um to ~300 um
resolution~3 um to ~30 um
resolution
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Resolution Simplified
• Resolution is the ability to distinguish features that are closely
spaced as distinct features.
• Detectability is the ability to find a feature but not necessarily
distinguish them from each other.
• Lateral resolution is determined by the transducer spot size which is
a function of frequency and lens design
• Axial resolution is determined by the pulse length which is a function
of frequency and transducer damping
• Resolution at high frequencies is deteriorated by sample and
coupling fluid absorption
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C4 Flip-chip Solder Bump Inspection
230 MHz C-scan Image
Voids/disbonds –
focused and gated
within the solder balls
180 MHz C-scan Image
Voids/disbonds –
focused and gated
within the solder balls
C-SCAN
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Bonded wafer resolution test sample
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Glass wafer(Borosilicat glass)
Silicon wafer
Trenches with defined width and distances in triplets
Ultrasound impinges
connected interface
Ultrasound impinges
disconnected interface
525 µm
400 µm
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Spots / Lines Distance between Lines
3 µm 3 µm
5 µm 5 µm
7 µm 7 µm
10 µm 10 µm
12 µm 12 µm
15 µm 15 µm
17 µm 17 µm
20 µm 20 µm
22 µm 22 µm
25 µm 25 µm
30 µm 30 µm
40 µm 40 µm
50 µm 50 µm
100 µm 100 µm
Etched Trenches
Bonded area
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25-100u
15-22u
3-10u
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Resolution test target showing 3 and 5 micron lines/spacing
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Enlargement of 3 micron lines/spacing
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C-SAM
19
Water Plume Transducer ^
Water Fall Transducer ^
Advancements in water
management and hardware to aid
sample handling and minimize
water contact with the sample
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C-SAM
20
Rotational Stage ^
Advancements in water
management and hardware to aid
sample handling and minimize
water contact with the sample
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Virtual Rescanning
Module (VRM)VRM allows the entire A-scan to
be stored at every pixel position
within the image (field of view)
A-Scan data from an entire
sample is digitally stored in a 3
dimensional data matrix for each
X, Y, Z location.
Now the part may be
“rescanned” and analyzed off
line “without needing the part”.
Advancements in software
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Virtual Rescanning Module (VRMTM)
Virtual Rescan Module (VRM)
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Virtual Rescanning Module
(VRMTM)
Horizontal & Vertical B-scan
Virtual Rescan Module (VRM)
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Time Domain vs. Frequency Domain Imaging
• Time Domain Imaging (TDI) is the common and familiar mode in which the brightness or color of each pixel in the image represents the strength (magnitude) and phase (polarity) of an echo in the gate.
• Frequency Domain Imaging (FDI) is a new analytical mode (FFT) in which the brightness of each pixel represents the strength of a particular frequency component of an echo. FDI can reveal features that are missed with TDI Contrast and resolution can be improved.
• An echo is a pulse and, therefore, composed of a broad range of frequencies on either side of a peak frequency.
Time Domain vs. Frequency Domain
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Ma
gn
itu
de
Frequency Content of a PulseM
ag
nit
ud
e
A pulse may be analyzed to determine the range of frequencies that comprise it.
11
0 –
14
0 –
17
0 –
20
0 –
23
0 –
26
0 –
29
0 –
32
0 –
Frequency (MHz)
Time Domain vs. Frequency Domain
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VRMTM – Frequency Domain Imaging (FDI)
Time Domain vs. Frequency Domain
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141 MHz
175 MHz
167 MHz
195 MHz 226 MHz
Original
Reconstruction
VRMTM – Frequency Domain Imaging (FDI)
Time Domain vs. Frequency Domain
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1 nanosec gating
with up to100 gates
Advancements in software (Polygate Mode)
Multi-focus
Multi-gate
Polygating provides micro-slicing ( > 1 ns
gating) with multiple gates so that numerous
interfaces can be collected simultaneously
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Die Attach
MC/Substrate
Interface
THRU-Scan
Die FaceSurface
Polygating provides micro-slicing ( > 1 ns gating)
with multiple gates so that numerous interfaces
can be collected simultaneously
(example; BGA)
Advancements in software
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Integral Mode
Each pixel value
incorporates the
area above and
beneath the
baseline (not just
the largest
amplitude). This
gives weight to
smaller echoes.
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• The ASF feature is an acoustic profilometer. It is based on the velocity of sound using existing C-Mode Scanning Acoustic Microscope (C-SAM) technology.
• The ASF feature ‘profiles’ the sample surface to an accuracy of + 1 micron.
• A major new option for both product R & D and Failure Analysis labs
• Compliments current C-SAM capability. For a modest additional cost and no additional floor space the analyst gets the benefits and capability of an additional tool to determine what is wrong with a part.
Acoustic Surface Flatness (ASF)
Acoustic Surface Flatness (ASF)
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JEDEC Standard 95: Design Guide 4.17
BGA Package Measuring and
Methodology
Acoustic Surface Flatness (ASF)
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Acoustic Surface Flatness
•The ASF feature ‘profiles’ or “tracks” the position of the
front surface echo.
•It assigns a color in the image based upon the echo’s
position in time.
•Echoes that are located farther to the left in the A-Scan
are closer to the transducer and will appear white and/or
purple in the image. Echoes that are located farther to
the right in the A-Scan are further from the transducer
and appear orange and/or red in the image.
Acoustic Surface Flatness (ASF)
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Wafer
2D AMI
Image
Wafer
3D Contour
Wafer 2D ASF Image
with 140 μm Warpage
Center to Edge
Acoustic Surface Flatness (ASF)
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Die only:
Acoustic Reflection
Die only:
Acoustic Flatness
Die
Substrate
Substrate:
At least 80 µm of bow
Acoustic Flatness
ASF - Flip Chip and Substrate Warpage
Acoustic Surface Flatness (ASF)
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Profile Imaging
Note: die-tilt in all images
C-scan image (above)
Q-BAM image (below)(cross section)
C-scan, Q-BAM & Profile Modes
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Sonosimulator - A
model of the sample
can be built to
simulate its acoustic
structure with known
defects at layers of
interest.
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Sonosimulator - Using
a reference waveform
a model of the A-scan
is generated and
compared for each
layer of interest.
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Sonosimulator DSA (Die Stack Analysis) Interface Locator
Transducer frequency, focus level, and gate positions can then be
established, tested and refined prior to transferring the imaging
settings. The example shows levels five (5) and six (6) of an eight (8)
multi-stack array.
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Multi-Die Stack Example
• 4 Stacked Die
– Adhesive layer between each die
– Wire bonded
41
Dies 1 to 2
Dies 2 to 3Dies 3 to 4
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3 DIE STACK - 2D C-Scan IMAGE
C:\Documents and Settings\lkessler\My Documents\ALS Documents\Presentation Images - 2\Acoustic\BGA-CSP\BGA Stacked Die 1 Multi Die 50.tif
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3 DIE STACK – 3D RECONSTRUCTION
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CONCLUSION
Acoustic Micro Imaging has evolved to meet the needs of the Semiconductor and Microelectronic packaging markets. AMI development will remain to be in the forefront in response to the industry’s changing needs.
High frequency transducer development and optimization
Edge effect reduction for flip chip bump arrays
Signal processing and interpretation (new imaging methods)
Smart and automated systems
Thin layer metrology
Frequency Domain Imaging exploration for better analysis.
Correlation studies between internal defects and surface warpage
Stacked Die analysis program development