HiP2471

23

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

FeaturesOrder code VDS RDS(on) typ. ID

SCTW35N65G2VAG 650 V 55 mΩ 45 A

• AEC-Q101 qualified • Very fast and robust intrinsic body diode• Low capacitance

Applications• Switching mode power supply• EV chargers• DC-DC converters

DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance. The variation of switching loss is almost independent of junctiontemperature.

Product status link

SCTW35N65G2VAG

Product summary

Order code SCTW35N65G2VAG

Marking SCT35N65G2V

Package HiP247

Packing Tube

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW35N65G2VAG

Datasheet

DS12885 - Rev 2 - February 2020For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 650 V

VGSGate-source voltage -10 to 22

VGate-source voltage (recommended operating range) -5 to 18

IDDrain current (continuous) at TC = 25 °C 45

ADrain current (continuous) at TC = 100 °C 35

IDM(1) Drain current (pulsed) 90 A

PTOT Total power dissipation at TC = 25 °C 240 W

Tstg Storage temperature range-55 to 200

°C

TJ Operating junction temperature range °C

1. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.72 °C/W

Rthj-amb Thermal resistance junction-ambient 40 °C/W

SCTW35N65G2VAGElectrical ratings

DS12885 - Rev 2 page 2/12

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V

IDSS Zero gate voltage drain currentVGS = 0 V, VDS = 650 V 50

µAVGS = 0 V, VDS = 650 V, TJ = 200 °C(1) 100

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V ±250 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 1.8 3.2 5 V

RDS(on) Static drain-source on-resistance

VGS = 20 V, ID = 20 A 45 67

mΩVGS = 18 V, ID = 20 A 55

VGS = 20 V, ID = 20 A, TJ = 200 °C 68

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VGS = 0 V, VDS = 400 V, f = 1 MHz

- 1370 - pF

Coss Output capacitance - 125 - pF

Crss Reverse transfer capacitance - 30 - pF

Rg Gate input resistance f = 1 MHz, ID = 0 A - 2 - Ω

Qg Total gate charge

VDD = 400 V, ID = 20 A, VGS = 0 to 20 V

- 73 - nC

Qgs Gate-source charge - 14 - nC

Qgd Gate-drain charge - 27 - nC

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 400 V, ID = 20 A,

RG = 4.7 Ω, VGS = -5 to 20 V

- 100 - µJ

Eoff Turn-off switching energy - 35 - µJ

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 400 V, ID = 20 A,

RG = 4.7 Ω, VGS = -5 to 20 V

- 16 - ns

tf Fall time - 14 - ns

td(off) Turn-off delay time - 35 - ns

tr Rise time - 9 - ns

SCTW35N65G2VAGElectrical characteristics

DS12885 - Rev 2 page 3/12

Table 7. Reverse diode characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage VGS = 0 V, IF = 20 A, - 4.5 - V

trr Reverse recovery time

VDD = 400 V, IF = 20 A, di/dt = 1000 A/µs

- 18 - ns

Qrr Reverse recovery charge - 85 - nC

IRRM Reverse recovery current - 7 - A

SCTW35N65G2VAGElectrical characteristics

DS12885 - Rev 2 page 4/12

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG270320171257SOA

10 1

10 0

10 -110 -1 10 0 10 1 10 2

I D (A)

V DS (V)

Operation in this areais limited by max.R DS(on)

T j ≤ 200 °CTc = 25 °Csingle pulse

tp =100 µs

t p =1 ms

t p =10 ms

Figure 2. Thermal impedance

GADG270320171310ZTH

10 -1

10 -210 -5 10 -4 10 -3 10 -2 10 -1

K

t p (s)

single pulse

Figure 3. Output characteristics (TJ = 25 °C)

SIC140220171450OC25

80

60

40

20

00 2 4 6 8 10 12

ID (A)

VDS (V)

VGS = 20 V

VGS = 16 V

VGS = 6 VVGS = 8 V

VGS = 10 V

VGS = 12 V

VGS = 14 V

Figure 4. Output characteristics (TJ = 175 °C)

SIC140220171450OC175

80

60

40

20

00 2 4 6 8 10 12

ID (A)

VDS (V)

VGS = 6 V

VGS = 8 V

VGS = 10 V

VGS = 12 V

VGS = 14 VVGS = 16 VVGS = 20 V

Figure 5. Transfer characteristics

GADG140220171450TCH

80

60

40

20

00 4 8 12 16

ID (A)

VGS (V)

VDS = 10 V

TJ = 175 °C

TJ = 25 °C

Figure 6. Power dissipation

GADG220120191057PDT

240

200

160

120

80

40

0-75 -25 25 75 125 175

PTOT (W)

TC (°C)

TJ = 200 °C

SCTW35N65G2VAGElectrical characteristics (curves)

DS12885 - Rev 2 page 5/12

Figure 7. Gate charge vs gate-source voltage

GADG140220171452QVG

20

16

12

8

4

00 10 20 30 40 50 60 70

VGS (V)

Qg (nC)

VDD = 400 VID = 20 A

Figure 8. Capacitance variations

GADG140220171452CVR

10 3

10 2

10 1

10 -1 10 0 10 1 10 2

C (pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 9. Switching energy vs drain current

SIC140220171454SLC

1000

800

600

400

200

00 20 40 60

E (μJ)

ID (A)

Etot

Eon

Eoff

VDD = 400 V, RG = 4.7 Ω,

VGS = -5 to 20 V

Figure 10. Switching energy vs junction temperature

SIC140220171455SLT

140

120

100

80

60

40

20

00 50 100 150

E (μJ)

TJ (°C)

Etot

Eon

Eoff

VDD = 400 V, RG = 4.7 Ω,ID = 20 A, VGS = -5 to 20 V

Figure 11. Normalized V(BR)DSS vs temperature

GADG220120191045BDV

1.06

1.04

1.02

1.00

0.98

0.96

0.94-75 -25 25 75 125 175

V(BR)DSS (norm.)

TJ (°C)

ID = 1 mA

Figure 12. Normalized gate threshold voltage vstemperature

GADG220120191045VTH

1.4

1.2

1.0

0.8

0.6

0.4-75 -25 25 75 125 175

VGS(th) (norm.)

TJ (°C)

ID = 1 mA

SCTW35N65G2VAGElectrical characteristics (curves)

DS12885 - Rev 2 page 6/12

Figure 13. Normalized on-resistance vs temperature

GADG220120191045RON

2.0

1.5

1.0

0.5

0-75 -25 25 75 125 175

RDS(on) (norm.)

TJ (°C)

VGS = 20 V

Figure 14. Reverse conduction characteristics (TJ = 25 °C)

SIC140220171501RRT25

-20

-40

-60

-80

-100-7 -6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS = 10 V

VGS = 5 V

VGS = -5 V

VGS = -2 V

VGS = 0 V

Figure 15. Reverse conduction characteristics (TJ = 175 °C)

SIC140220171502RRT175

-20

-40

-60

-80

-100-7 -6 -5 -4 -3 -2 -1

ID (A)

VDS (V)

VGS = 10 V

VGS = 5 V

VGS = -5 V

VGS = -2 V

VGS = 0 V

SCTW35N65G2VAGElectrical characteristics (curves)

DS12885 - Rev 2 page 7/12

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

3.1 HiP247 package information

Figure 16. HiP247 package outline

8581091_2

SCTW35N65G2VAGPackage information

DS12885 - Rev 2 page 8/12

Table 8. HiP247 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.85 5.00 5.15

A1 2.20 2.60

A2 1.90 2.00 2.10

b 1.00 1.40

b1 2.00 2.40

b2 3.00 3.40

c 0.40 0.80

D 19.85 20.00 20.15

E 15.45 15.60 15.75

E3 1.45 1.65

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.30 18.50 18.70

P 3.55 3.65

Q 5.65 5.95

S 5.30 5.50 5.70

SCTW35N65G2VAGHiP247 package information

DS12885 - Rev 2 page 9/12

Revision history

Table 9. Document revision history

Date Revision Changes

22-Jan-2019 1 First release.

13-Feb-2020 2 Modified Table 1. Absolute maximum ratings.

SCTW35N65G2VAG

DS12885 - Rev 2 page 10/12

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

SCTW35N65G2VAGContents

DS12885 - Rev 2 page 11/12

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© 2020 STMicroelectronics – All rights reserved

SCTW35N65G2VAG

DS12885 - Rev 2 page 12/12