MOSFET - Farnell element14or separate totem poles is generally recommended. Table 1 Key Performance...
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1 IPDD60R080G7 Rev. 2.0, 2018-01-05 Final Data Sheet Pin 1 2 3 4 5 6 7 8 9 10 PG-HDSOP-10-1 Drain Pin 6-10 Gate Pin 1 Power Source Pin 3,4,5 Driver Source Pin 2 MOSFET 600V CoolMOS™ G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of the C7 GOLD CoolMOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Features • C7 Gold gives best in class FOM RDS(on)*Eoss and RDS(on)*Qg. • Suitable for hard and soft switching (PFC and high performance LLC) • C7 Gold technology enables best in class RDS(on) in smallest footprint. • DDPAK package has inbuilt 4 th pin Kelvin Source configuration and low parasitic source inductance (~3nH). • DDPAK package is MSL1 compliant, total Pb-free, has easy visual inspection leads and is qualified for industrial applications according to JEDEC 47/20/22. • DDPAK SMD package combined with lead free die attach process enables improved thermal performance (Rth). Benefits • C7 Gold FOM RDS(on)*Qg is 15% better than previous C7 600V enabling faster switching leading to higher efficiency. • Possibility to increasse economies of scales by usage in PFC and PWM topologies in the application. • C7 Gold can reach 50mΩ in DDPAK 115mm 2 footprint, whereas previous BIC C7 600V was 40mΩ in 150mm 2 D 2 PAK footprint. • Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. • DDPAK package is easy to use and has the highest quality standards. • Improved thermals enable SMD DDPAK package to be used in higher current designs than has been previously possible. Potential applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS@Tj,max 650 V RDS(on),max 80 mΩ Qg,typ 42 nC ID,pulse 83 A ID,continuous @ Tj<150°C 40 A Eoss@400V 5 µJ Body diode di/dt 820 A/µs Type / Ordering Code Package Marking Related Links IPDD60R080G7 PG-HDSOP-10 60R080G7 see Appendix A
Transcript of MOSFET - Farnell element14or separate totem poles is generally recommended. Table 1 Key Performance...
1
IPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
Pin 12
34
5
67
89
10
PG-HDSOP-10-1
Drain
Pin 6-10
Gate
Pin 1
Power
Source
Pin 3,4,5
Driver
Source
Pin 2
MOSFET600VCoolMOS™G7PowerTransistorTheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsoftheC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityandtheimprovedthermalpropertiesoftheDDPAKpackagetoenableapossibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
Features•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.•DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlowparasiticsourceinductance(~3nH).•DDPAKpackageisMSL1compliant,totalPb-free,haseasyvisualinspectionleadsandisqualifiedforindustrialapplicationsaccordingtoJEDEC47/20/22.•DDPAKSMDpackagecombinedwithleadfreedieattachprocessenablesimprovedthermalperformance(Rth).
Benefits•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venablingfasterswitchingleadingtohigherefficiency.•PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWMtopologiesintheapplication.•C7Goldcanreach50mΩinDDPAK115mm2footprint,whereaspreviousBICC7600Vwas40mΩin150mm2D2PAKfootprint.•ReducingparasiticsourceinductancebyKelvinSourceimprovesefficiencybyfasterswitchingandeaseofuseduetolessringing.•DDPAKpackageiseasytouseandhasthehighestqualitystandards.•ImprovedthermalsenableSMDDDPAKpackagetobeusedinhighercurrentdesignsthanhasbeenpreviouslypossible.
PotentialapplicationsPFCstagesandPWMstages(TTF,LLC)forhighpower/performanceSMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS@Tj,max 650 V
RDS(on),max 80 mΩ
Qg,typ 42 nC
ID,pulse 83 A
ID,continuous @ Tj<150°C 40 A
Eoss@400V 5 µJ
Body diode di/dt 820 A/µs
Type/OrderingCode Package Marking RelatedLinksIPDD60R080G7 PG-HDSOP-10 60R080G7 see Appendix A
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
2919 A TC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 83 A TC=25°C
Avalanche energy, single pulse EAS - - 97 mJ ID=5A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.49 mJ ID=5A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 5.0 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 174 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current IS - - 29 A TC=25°C
Diode pulse current2) IS,pulse - - 83 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8
Maximum diode commutation speed dif/dt - - 820 A/µs VDS=0...400V,ISD<=7.7A,Tj=25°C see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj,max2) Pulse width tp limited by Tj,max3) Identical low side and high side switch
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.72 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.
Reflow soldering temperature Tsold - - 260 °C reflow MSL1
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.49mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.0690.172
0.080- Ω VGS=10V,ID=9.7A,Tj=25°C
VGS=10V,ID=9.7A,Tj=150°C
Gate resistance RG - 0.8 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1640 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 34 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 63 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 643 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 19 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9
Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9
Turn-off delay time td(off) - 61 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9
Fall time tf - 3.5 - ns VDD=400V,VGS=13V,ID=9.7A,RG=5.3Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 8 - nC VDD=400V,ID=9.7A,VGS=0to10VGate to drain charge Qgd - 15 - nC VDD=400V,ID=9.7A,VGS=0to10VGate charge total Qg - 42 - nC VDD=400V,ID=9.7A,VGS=0to10VGate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=9.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.8 - V VGS=0V,IF=9.7A,Tj=25°C
Reverse recovery time trr - 310 - ns VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 3.7 - µC VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 26 - A VR=400V,IF=9.7A,diF/dt=100A/µs;see table 8
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
160
180
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
1021 µs10 µs100 µs
1 ms10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102 1 µs10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-6 10-5 10-4 10-3 10-2 10-110-3
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
20
40
60
80
100
120
14020 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
10
20
30
40
50
60
7020 V10 V
8 V7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 10 20 30 40 50 60 70 800.175
0.185
0.195
0.205
0.215
0.225
0.235
0.245
0.255
0.265
0.275
0.285
0.295
20 V
5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
98%
typ
RDS(on)=f(Tj);ID=9.7A;VGS=10V
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
20
40
60
80
100
120
140
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 40 500
2
4
6
8
10
12
400 V120 V
VGS=f(Qgate);ID=9.7Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.510-1
100
101
102
125 °C25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
10
20
30
40
50
60
70
80
90
100
EAS=f(Tj);ID=5A;VDD=50V
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600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-60 -20 20 60 100 140 180540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 50010-1
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 5000
1
2
3
4
5
6
7
Eoss=f(VDS)
11
600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
5TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
12
600VCoolMOS™G7PowerTransistorIPDD60R080G7
Rev.2.0,2018-01-05Final Data Sheet
6PackageOutlines
PG-HDSOP-10-1
MILLIMETERS
1.14
D
N
H
E1
e
E
D1
1.20
10.50
20.81
6.40
5.20
15.20
10
b2
A
DIMENSIONS
b
c
A2
A1
0.57
MIN.
2.20
0.89
0.46
0.57
0.00
1.40
5.50
10.70
15.60
6.60
21.11
0.93
MAX.
2.35
0.15
0.63
0.58
1.10
L
1
SCALE
Z8B00184263
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
06.02.2017
0 5mm
DOCUMENT NO.
5:1
2 3 4
Figure 1 Outline PG-HDSOP-10, dimensions in mm/inches
13
600V CoolMOS™ G7 Power TransistorIPDD60R080G7
Rev. 2.0, 2018-01-05Final Data Sheet
7 Appendix A
Table 11 Related Links
• IFX CoolMOS TM G7 Webpage: www.infineon.com
• IFX CoolMOS TM G7 application note: www.infineon.com
• IFX CoolMOS TM G7 simulation model: www.infineon.com
• IFX Design tools: www.infineon.com
14
600V CoolMOS™ G7 Power TransistorIPDD60R080G7
Rev. 2.0, 2018-01-05Final Data Sheet
Revision History
IPDD60R080G7
Revision: 2018-01-05, Rev. 2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2018-01-05 Release of final version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
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