A SiC MOSFET for mainstream adoptionfiles.iccmedia.com/events/powercon17/munich_07_infineon.pdf ·...
Transcript of A SiC MOSFET for mainstream adoptionfiles.iccmedia.com/events/powercon17/munich_07_infineon.pdf ·...
A SiC MOSFET for mainstream adoptionPower Electronics Conference 2017, MunichDecember 5th, 2017
Dr. Fanny Björk, Infineon
Multiple levers for a SiC MOSFET must match
Reliability and robustness assurance
Cost position
System compatibility
Performance
Volume manufacturing capability
22017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.
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POUT in W
1200V SiC MOSFET: new degree of flexibility for system improvements
Higher conversion efficiency
Lower switching and conduction losses lead to › higher conversion efficiency at same
switching frequency› higher output power for a given
frame size
3L IGBT @24kHzState of the art solution
3L SiC @24kHz
Boosted efficiency enables› increased switching frequencies to
shrink magnetic components› reduced power circuit complexity by
using simpler topologies, e.g. 2L instead of 3L
Effect on system costs
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3L SiC @72kHz
3L IGBT @24kHzState of the art solution
Effi
cien
cy [
%]
Output Power [kW]
Effi
cien
cy [
%]
Output Power [kW]
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2L SiC @48kHz
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Effic
ienc
y in
%
Output Power in kW
SiC MOSFET fast switching capability must be handledwell, plug and play not always possible
2L SiC @48kHz3L Si IGBT @24kHz Si toSiC
Source: Sobe et al. PCIM 2017, “ Experimental study of Si- and SiC-based Voltage Source Inverters “
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Original design
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PCB re-design
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Different inductor design
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Highest efficiency and/or frequency by upgrading 3L topology with SiC MOSFET
3L Si IGBT@24kHz
3L with 1200 V SiC MOSFET
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ienc
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Output Power [kW]
with SiC
Plug&Play ?!
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ienc
y [%
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Output Power [kW]
24 kHz
72 kHz
System compatibility
SiC MOS A SiC MOS B SiC MOS C CoolSiC™
CoolSiC™ MOSFET comes with IGBT compatible gate driving
Vgs
,th
(V)
-15-10
-505
1015202530
Vgs,max
Vgs,min
Vgs,op+
Vgs,op-
15 V
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CoolSiC™ MOSFET comes with high robustness against parasitic turn-on
0
1
2
3
4
5
6
Vendor A Vendor B Vendor C Infineon
Vgs,t
h [V
]
Vgs,maxVgs,typVgs,min
4.5 V
3.5 V
82017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.
SiC MOS A SiC MOS B SiC MOS C CoolSiC™
SiC MOSFETs need the feature to be externally slowed down – example CoolSiC™ MOSFET
Rg controllable di/dt and dv/dt
I(t)
t
RG
Impact of Rg on dv/dt
MOSFETIGBT
› Essential pre-condition to cope with EMI aspects
92017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.
Driving SiC MOSFETs
› SiC MOSFETs are fast switching AND high voltage devices, which can reach 50 V/ns or above
› Higher switching speed requires higher gate drive current strength as well as well-matched delays and accurate timing and tight tolerances
› SiC MOSFETs might need a negative gate voltage or a Miller clamp
› SiC MOSFETs may need fast short circuit protection as its short circuit capability is less than traditional IGBT
102017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.
EiceDRIVER™ ICs are perfect fit to CoolSiC™ MOSFET
Features› Three families to perfectly match
design requrirements– 4 single-channel high-side
compact gate drivers– 2 single- and dual output
enhanced drives with short-circuit protection
– 1 slew-rate control high-sidedriver for toughest requirements
› Available in wide body packagewith 7.6 mm creepage distance
› Suitable for operation at high ambient temperature
› Active Miller clamp› Short circuit clamping and active
shutdown› ≥ 100 kV/μs CMTI (1EDU20I12SV:
≥ 50 kV/μs CMTI )› Precision short-circuit protection
(through DESAT)› 12 V/ 11 V typical UVLO thresholds
112017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.
Part NumberTypicalPeak Drive Current
VCC2-VEE2
TypicalPropagation Delay
Active Miller Clamp
Other Key Features
1EDI20I12MFDSO-8 150mil
3.5 A 20 V ≤ 300 ns Yes Functional Isolation
1EDC20H12AHDSO-8 300mil
3.5 A 40 V ≤ 125 ns No7.6 mm CreepageClearance;UL 1577 certified with VISO = 2.5 kV(rms) for 1 min
1EDC60H12AHDSO-8 300mil
9.4 A 40 V ≤ 125 ns No
1EDC20I12MHDSO-8 300mil
3.5 A 20 V ≤ 300 ns Yes
1ED020I12-F2DSO-16 300mil
2.0 A 28 V ≤ 170 ns Yes Short circuit clamping; DESAT protection;Active shutdown2ED020I12-F2
DSO-362.0 A 28 V ≤ 170 ns Yes
1EDU20I12SVDSO-36
2.0 A 28 V ≤ 485 ns Yes
Real-time adjustable gate current control;Over-current protection;Soft turn-off shut down;Two-level turn-off;UL 1577 certified with VISO = 5 kV(rms) for 1 min
Reliability androbustness assurance
fsw [Hz]
Pout [W]
1k
1k 10k 100k 1M
1M
10k
100k
10M
10M
Silicon
SiC
GaN
Central PV*
› Remains mainstream technology
* PV = photovoltaic inverter; ** OBC = onboard charger
String PV*
pile
OBC**
Reliability and robustness assurance in SiC strongly linked to silicon mainstream technologies
Infineon is a proven leading supplier when it comes to• high power• high reliability• high robustnessWith this experience we set tough SiC MOSFET requirements
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CoolSiC™ MOSFET shows an oxide stability similar to the well established silicon IGBT's
Failure rates of SiC MOSFETs Picture obtained on Si-IGBT's
Source: Beier-Möbius et al. PCIM 2017
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Robustness levels equivalent to IGBT based systems by advanced trench technology
DMOS
Trenchvs
n-
e e e e
strong trade-off between performance and gate oxide robustness in on-state
n-
pee
easier to reach performance without violating gate oxide safe conditions
Perf
orm
ance
Robustness
Positioning
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New publication Vth stability: Aichinger et al. Microelectronics Reliability 80 (2018) 68–78
CoolSiC™ MOSFET body diode can be used
Test conditions:› DC stress of body diode at
VGS=-9 V, 20 A per chip, Tvj~150°C› VF and RDSon correlations >100h DC
operation
3,9
4,1
4,3
4,5
4,7
4,9
3,9 4,1 4,3 4,5 4,7 4,9
VF [V
]: In
term
edia
te /
Fina
l Tes
t
VF [V]: Pre-Test
Correlation VF
0,02
0,02
0,02
0,03
0,03
0,03
0,02 0,02 0,02 0,03 0,03 0,03R
DSo
n[O
hm]:
Inte
rmed
iate
/ Fi
nal T
est
RDSon [Ohm]: Pre-Test
Correlation RDSon
CoolSiC™ MOSFET body diode iscommutation robust and reliablein long term operation.
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Cost position
System costs
Better productivity SiC vs. Si
Chip costs
2017
exemplary
SiC
Si
2017
SiC@10kHz
SiC@40kHzSi
exemplary
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Volume manufacturingcapability
Extreme high volume flexibility
and reliability proven by multi
million track record
Most comprehensive power portfolio
in the market ensures always
best-fit
Pioneer in SiCtechnology andexpertise in allleading powertechnologies (Si, SiC, GaN-on-Si)
Infineon covers the full range from system understanding to manufacturing
Extensiveapplicationsystem under-standing andglobal support
Extensive system expertise Application-dedicated products
Unique power technology portfolio Benchmark in manufacturing
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Industrial grade Automotive grade
CoolSiC™ MOSFET is available in integration levels for different fields of application
Bare dieDiscreteModule
Infineon offers CoolSiC™ solutions as chips, discretes and modules
Photovoltaic EV charging
UPS/ SMPS1) Traction
xEV (OBC)
1) UPS = uninterrupted power supply; SMPS = Switched-mode power supply
xEV (inverter)Drives
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CoolSiC™ MOSFET - Revolution to rely on
Reliability and robustness assurance
Cost position
System compatibility
Performance
Volume manufacturing capability
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BACK-UP
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CoolSiC™ MOSFET roll-out
Portfolio
Easy 2B
62 mm
Easy 1B
Discrete &Easy 1B
2017: the roll-out starts
Chips
TO-247› 3-Pin device› 4-Pin device
Easy 1B› Sixpack› Booster › Halfbridge
Easy 2B› Halfbridge
62 mm› Halfbridge
Inverter power200kW2 kW
≥ 6 mΩ Rds(on)
≥ 8 mΩ Rds(on)
≥11 mΩ Rds(on)
≥ 45 mΩ Rds(on)
Sixpack new
new
new
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1200 V CoolSiC™ MOSFET: Discrete portfolio extension 2018
On-resistance,RDSon [mOhm] TO247-3 TO247-4
45 IMW120R045M1 IMZ120R045M1
80 IMW120R080M1 IMZ120R080M1
120 IMW120R120M1 IMZ120R120M1
180 IMW120R180M1 IMZ120R180M1
280 IMW120R280M1 IMZ120R280M1
450 IMW120R450M1 IMZ120R450M1
262017-12-05 Copyright © Infineon Technologies AG 2017. All rights reserved.