4B8: Electronic System Design · 4B8: Electronic System Design Dr Ken Teo ([email protected])...
Transcript of 4B8: Electronic System Design · 4B8: Electronic System Design Dr Ken Teo ([email protected])...
4B8: Electronic System DesignDr Ken Teo ([email protected])
4B8: Electronic System Design
Dr Ken Teo (~8L)Dr Peter Spreadbury (~4L)
4B8: Electronic System DesignDr Ken Teo ([email protected])
Content
K.T. P.S. K.T.Also microcontrollers
4B8: Electronic System DesignDr Ken Teo ([email protected])
Assessment• Coursework (25%)
– Michaelmas Term, week 5-7– PSPICE simulation of 1 ‘textbook’ circuit and 1
‘student’ circuit– 3 page report
• Written exam (75%)– Easter term– 1.5 hours– 3 out of 5 questions
4B8: Electronic System DesignDr Ken Teo ([email protected])
Low frequency precision amps• Imperfections of op-amps
– Common mode gain– Input offset voltage– Input bias current– Temperature effects
• Instrumentation amplifier configuration and its applications
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.1. Non ideal input• Op-amp front-end is differential amplifier
‘Long tail pair’
Define CMRR = |Ao/Acm|
vin1
e
co r
RA2
=
e
cCM rR
RA+
−=12
eCM
O
rR
AACMRR 1≈=
(re small)
vout
vin2
RC
R1
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.1. BJT Non ideal input
VB1
• Current source –good CMRR
• Sets IB = IC/β• If VB1 = VB2,
VO1 = VO2• In practice, no,
imperfect transistors
• Some op-amps offset adjust
• Not preferred, use laser trimmed
VB2
VO1 VO2
IB IB
+VCC
4B8: Electronic System DesignDr Ken Teo ([email protected])
Analog Devices OP-90
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.1. FET Non ideal input• IG1 and IG2 are
reverse leakage currents
• FET – reverse biased p-n
• MOSFET – gate leakage
• Double every 10C • Mismatch tends to
be worse than BJT
IG1 IG2
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.2. Input offset voltage• If op-amp inputs shorted, expect zero output• In practice, Voffset (output) α closed loop gain• Define: Vio
coef. etemperatur voltageoffset input average
TVio
=α
∆α=
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.2. Input offset voltage• If op-amp inputs shorted, expect zero output• In practice, Voffset (output) α loop gain• Define: Vio
coef. etemperatur voltageoffset input average
TVio
=α
∆α=
• Low gain circuits, Vio not crucial
• High gain / precision circuits, must consider Vio
• Can trim with offset pot
• BUT – ok for fixed temperature
– external R introduces noise / drift
• Use laser trimmed, low offset devices
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.3 Input bias current / offset current
• Bias current (temperature dependent) cause voltage drops
( )
2b1bos
2b1bb
21
iii2
iii
input define 0,V VWhen
−=
+=
==
NB: Must provide ib path
NB: Best if R1= R2
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.3. Op-amp input model
( )ioO VVVGVgeneral,In
+−= −+
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.3. Op-amp input model
( )
( ) ( )[ ]
( ) ( )[ ]io11b22b21
io2b221b11O
ioO
VRiRiVVG
ViRViRVGV
:connected circuit input the With
VVVGV
+−+−=
+−−−=
+−= −+
Ideal op-amp Error terms
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.5. Note on Noise Gain• Which input to put Ve?
⎟⎟⎠
⎞⎜⎜⎝
⎛ +=
=+⎟⎟⎠
⎞⎜⎜⎝
⎛+
2
21eO
e21
2O
RRRVV
0VRR
RV⎟⎟⎠
⎞⎜⎜⎝
⎛ +=
2
21eO R
RRVV
Does not matter, and Ve is just multiplied by gain
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• Estimate error VO
LM741C
Vio = 2 mVα= 1.5 µV/CIb= 80 nART = 20 C
Ib
Ib flows through 120K || 1M2 || 1M12 ~ 100K
Error due to Ib = 100K x 80nA = 8 mV
Error due to Vio = 2 mV
Ve = 10mV
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example
Ib
V1 = V2 = 0(definition of Ib)
Ve
mV120101.12V1.12V
02M1VV
M1K120V
K120V:VatKCL
eO
Oeeee
=×==
=−
++
+
To reduce Ve,1) add RB = 100K2) use smaller resistances3) or last resort, trim it
RB
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• Vio at 20C = 0, no bias current effects, Ve at 70C?
Input offset current effect: IOS = 0.5nA x 50C = 25nA
Ve = 25nA x 100K = 2.5mV
VO = 12 x 2.5 = 30mV
Input offset voltage effect: Vio = 15µV/C x 50C = 0.75mVVO = 12 x 0.75 = 9mV
Total offset change = 30 + 9 = 39mV
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.6. CMRR
CM
O
O
CM
OCMCMO
-
-CM
-
AA CMRR
gain aldifferenti Awhere gain mode common Awhere
AVAVV VVV amplify), to want we(what Difference
2VV Vvoltage, input mode Common
inputs. amplifier the at Vand Apply V
=
=
=
∆+=∴−=∆
+=
+
+
+
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.6. Common mode errors
( )
( )( )( )
2A2A1 Awhere
A2-A1 Awhere 2V)AA(VAA V :to leads This
VAVA Vpaths, gain identical-non ButAVV V ,Ideally
O
CM
21CM21O
21O
-O
+=
=
∆++−=
−=
−=
−+
+
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• Ideal op-amp, difference amp gain 20, with
R2=R4 and R1=R3, but 1% error in R3.
V1
V2
VOR2 = 20 R1
R2 = R4
R3 = 1.01 R1
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example
( )( )
dB86CMRR & 200RR 200, gain For
dB665.1999AACMRR
01.099.1920A
995.192
2099.19A
V20V99.19VRRV
RRR
R01.1RRRRRVV
RRV
RRR
RRRVV
12
CM
O
CM
O
12O
1
21
1
21
121
2122O
1
21
1
21
43
42O
===
===∴
=−=∴
=+
=∴
−=
⎟⎟⎠
⎞⎜⎜⎝
⎛−⎟⎟
⎠
⎞⎜⎜⎝
⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛++
=
⎟⎟⎠
⎞⎜⎜⎝
⎛−⎟⎟
⎠
⎞⎜⎜⎝
⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛+
=
V1
V2
VO
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• Exposes single op-amp inadequacies:
– Input resistances low, if gain is high– Precise resistance matching required, or
CMRR is bad– Different source resistances upset resistor
matching– Gain not easily adjustable
(change 2 R’s)
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.7. Instrumentation Amp• Good difference amp with high CMRR and
symmetrical input resistance, set gain with R2
( ) ⎟⎟⎠
⎞⎜⎜⎝
⎛ +⎟⎟⎠
⎞⎜⎜⎝
⎛−=
2
12
4
321O R
R2RRRVVV
4B8: Electronic System DesignDr Ken Teo ([email protected])
1.8. Integrated inst amp
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• Strain gauge in desert, -10C to 55C• Gain = 500, input RC has R = 10K• INA114, so:
Change in Vo due to Vio temp effect = 1mV/C x 500 = 0.5 mV/CChange in Vo due to Ib temp effect = 8pA/C x 10K x 500 = 0.04 mV/CCombined variation due to temp effect = 0.54 mV/C
If we say device is trimmed (no offset) at 20C, then variation (-30/+35) is-16.2mV @ -10C to 18.9mV at 55C
4B8: Electronic System DesignDr Ken Teo ([email protected])
Example• INA114, gain=10. Ve = 0.5V @ 50Hz/200kHz
For G = 10, CMRR @ 50Hz = 115dBCMRR @ 200kHz = 60dB
kHz200@mV50Hz50@uV9
)f(CMRR105.0V
CMRRAA
AA CMRR
O
OCM
CM
O
==
×=
=
=
4B8: Electronic System DesignDr Ken Teo ([email protected])
Applications• Thermocouples (eg. K-type, 4mV change
from 0C to 100C)• Microphones• Strain gauges • ECG, nerve signals• NB. Remember to provideinput for bias current