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Transcript of 42V Slides
142V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Semiconductor Technologies and Power Switches for newAutomotive Electrical Systems with higher Voltages
1. Introduction
2. 42V related activities
3. High voltage automotive applications
4. Advantages of the new 42V el. power system
5. Example: 300W heater at 42V
Power window at 42V
6. Quality and EMC at 42V
7. Technology and product overview
8. System approach
9. Conclusion
Dr. Alfons GrafInfineon Technologies AG i. Gr.Power SemiconductorsTechnical MarketingD-81541 München++89/234-22805
242V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Powering Future Vehicles1st International Congress
28.-29. September 1999, Villach
42V PowerNet: the first solutions
350 participants,
follow up 04/2001
Haus der TechnikHaus der Technik e.V. e.V.
HollestrasseHollestrasse 1 1
D-45127 D-45127 EssenEssen, Germany, Germany
Tel: (+49) 201/1803-228Tel: (+49) 201/1803-228
E-mail: E-mail: fbfb@@hdthdt--essenessen.de.de
342V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
MIT 42V Consortium
442V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Forum Relationship Standardization
FAKRA
Forum
"Vehicle Electrical Systems Architecture"(15 manuf., 50 suppliers)
WGS (manuf., suppliers, FAKRA)
VDA
MIT IndustryConsortium (manuf., suppliers)
"External"
CISPR,VDE,others
ISO
542V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
42V PowerNet Activities
1. Name for the Entire System
In English: 42V PowerNet
In German: 42V - Bordnetz
2. Logo
3. Symbol or mark
(e.g. for components:“designed for 42V”)
642V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
High Voltage Smart Power Applications
application supply VAZ
42V automotive el. power net generator >60/70Vstarter/generator, power switching
24V truck el. power net generator >65Vpower switching
80V e.g. local high voltage DC/DC conv. >80Vfuel direct injection
60-80V active zener clamp -- >60/80Vfast inductance de-excitation
24/48V industry application power supply >65Vpower switching
742V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Simplified Electrical Distribution System with 14V and 42V Supply
A ACDC
DCDC
42V=
14V=
A: Alternator
S: Starter Pow
erLo
ad
Logi
cIn
Logi
cIn
Load
Logi
cIn
S
842V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Advantages of a new 42V electrical power system
- Decrease of currents e.g. factor 3
- Efficiency increase e.g. from 40% to 85% Alternator, Distribution, Switching
- Cable cross section, plug-in contacts
- New specifications Overvoltage, reverse battery Load-dump, Jump-start,
- New application can be realized e.g. EVT
- Reduction of semiconductor costs
942V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Partitioning of the loads
14V (conventional system)Lamps Shock sensitiveCommunication 5V-supplyModule-logic 5V-supplySmall motors Thin wiresSmall valves Thin wires
42V (additional system)Load with high power demand Starter
Brake/Drive by WireCatalyst heatingWindow- / seat-heatingWater/fuel pumpPower window, wiperEVTCooling fan ...
1042V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Vertical Power MOSFET Area versus Nominal Supply Voltage
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140
Nominal Supply Voltage VN [V]
Con
duct
ance
, Sili
con
Are
a [%
]
0
500
1000
1500
2000
2500
Spec
ific
RON
[%]
Conditions:Pload = const.Ploss = const.Vmax = VN + 30V
Conductance ~1/VN
Resulting silicon area
Specific RON ~e² c(VN+30V)
1142V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Definition of Supply Voltage Ranges for new 42V PowerNet
Definition of net requirements at 42V:
0Ustart
21V
min.start voltage
min.operating voltage
nominalvoltage
max. dynamicovervoltage(load dump)
max. continuousgenerator voltage
including ripple
max. operatingvoltage
=min. zener (avalanche)clamp voltage (Vmax)
0 42V 58V
min.operating voltage
nominaloperating voltage
max. zenerclamp voltage
=min. technology
breakdown voltage
Definition of semiconductor requirements at 42V:
75V*
reversepolarity
not allowed
18V
* : Dependant on semiconductor technology and circuit concept
reversepolarity
not specified
Umin
18VUop,min
30VUN
42VUeff-max,stat
48VUmax,stat
50VUmax,dyn
58V
Vbb(on) Vbb(AZ)
1242V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Definition of Supply Voltage Ranges for new 14V Net
Definition of net requirements at 14V:
0 9V 11V 14.3V 16V
min. voltageengine start
min. voltageengine off
max. voltageengine running
max.continuousovervoltage
max. operatingvoltage
=min. zener (avalanche)
clamp voltage (Vmax)
0 9V 14.3V 20V
min. operatingvoltage
nominal operatingvoltage
VN
Definition of semiconductor requirements at 14V:
30V*
max. zenerclamp voltage
=min. technology
breakdown voltage* : Dependant on semiconductor technology and circuit concept
reversepolarity
not allowed
reversepolarity
not specified
max. dynamicovervoltage(load dump)
20V
Vbb(on) Vbb(AZ)
1342V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power - MOSFET: Chip area versus RON , PV , VN
20%
140%
14V55V
42V Nominal Voltage VN75V Technology Breakdown Voltage
Nor
mal
ized
Chi
p A
rea
P V optimized
Chip cost optimized
100%
ROPO
RON= 9* ROPV = PO
RON≅≅≅≅ 1.4* ROPV ≅≅≅≅ 0.16* PO
RON= ROPV = 1/9 PO
1/RONPV
1/RONPV
1/RONPV
System cost reduction in all cases
1442V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Mechanical versus electronic power switch application
G
D S
fuse
>ILoad
relay, driver load
PROFET
>ILoad
Isense [mA]
loade.g. 280W
IN ST IS
+ electronic fuse function+ diagnostic / current sense+ fully protection+ PWM possibility+ less wires and connectors
Term. 30
Term. 30
1542V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
G
D S
PROFET
>6.5A load
IN ST IS
dramatic cost reduction:dramatic cost reduction:chip area + package + mounting
42V
Example: 280W heater at 14V or 42V
280W
G
D S
PROFET
>20A load
IN ST IS
14V
280WTO218PV=1.7WRON=2.9m2.9mΩΩΩΩΩΩΩΩ
D-PAKPV=1.1WRON=18m18mΩΩΩΩΩΩΩΩ
calculation at Tj=100°C
1642V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Chip Shrink Forces: Time and Nominal Voltage
1988 1994 1998
RO
N*m
m²
TO218TO21818m18mΩΩΩΩΩΩΩΩ60mm²60mm²
TO220TO22018m18mΩΩΩΩΩΩΩΩ25mm²25mm² D-PAKD-PAK
18m18mΩΩΩΩΩΩΩΩ10mm²10mm²
Chi
p ar
ea, p
acka
ge s
ize
TO218TO2182.9m2.9mΩΩΩΩΩΩΩΩ60mm²60mm²
D-PAKD-PAK18m18mΩΩΩΩΩΩΩΩ10mm²10mm²
‘Evolution’ in Silicon‘Evolution’ in Silicon Revolution in SiliconRevolution in Silicon
The step from 14V to 42V takes us 10 years into future
Application:280W heater
2000
14V14V
42V42V
1742V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
System Costs versus Nominal Voltage
14V 42V
norm
aliz
ed c
osts Revolution in SiliconRevolution in Silicon
280W heater :280W heater : switch and fuse costs
1
The step from 14V to 42V takes us 10 years into future
Silicon solution
Silicon solution
Mechanical solutionMechanical solution
3.5
0.81.1
1842V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
dramatic cost reduction:dramatic cost reduction:chip area + package + mounting
Power Window at 14V or 42V ( Low end )
PV : 100%RON = 50m50mΩΩΩΩΩΩΩΩ
Parameters of Power-Pack:RthJ_Air = 21 K/WRthJ_Case = 0.5 K/W
PV : 22%RON = 100m0mΩΩΩΩΩΩΩΩParameters of P-DSO-28:RthJ_Air = 60 K/WRthJ_Pin = 20 K/W
42V14V
M14V: IL=20/40A
42V: IL=6.6/13A
TRILITHICSmart Power Bridges
14V :
42V :Features: • PWM only for Softstart, not continuous• unprotected lowside switches
1942V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Window at 14V or 42V ( Mid range )
14V: IL=20/40A
42V: IL=6.6/13A
Features: • continuous PWM
M2
M1 D1
D2
ISense
IMotVOUT1
VS
M4
M3D3
D4
VOUT2
VS
M
Losses during ON-time:14 V:P_Loss_ON = IMOT
2 ( RDS_ON_HS + RDS_ON_LS ) = (20A)2 ( 35mΩΩΩΩ + 15mΩΩΩΩ ) = 20 W
42 V:P_Loss_ON = IMOT
2 ( RDS_ON_HS + RDS_ON_LS ) = (6.6A)2 ( 35mΩΩΩΩ + 15mΩΩΩΩ ) = 2.2 W
To have the same power losses at 42 V,you can afford a R_ON which is nine timeshigher than the R_ON needed at 14V.With same R_ON, losses are reduced withfactor nine.
2042V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Window at 14V or 42V ( Mid range )
14V: IL=20/40A
42V: IL=6.6/13A
Features: • continuous PWM
Losses during OFF-time:14 V:PLoss_OFF = IMOT
2 RDS_ON_HS + IMOT VTH_HS = (20A)2 35mΩΩΩΩ=
==
=+ 20A 0.8V = 14 W + 16 W = 30 W
42 V:PLoss_OFF = IMOT
2 RDS_ON_HS + IMOT VTH_HS = (6.6A)2 35mΩΩΩΩ=
==
=+ 6.6A 0.8V = 1.55 W + 5.3 W = 6.9 W
The threshold voltage of the body diode stays constant.Reduction of power losses of diodes with factor 3.
Total reduction of power losses with factor 4,4.
M2
M1 D1
D2
ISense
IMotVOUT1
VS
M4
M3D3
D4
VOUT2
VS
M
2142V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Window at 14V or 42V ( Mid range )
14V: IL=20/40A
42V: IL=6.6/13A
Features: • continuous PWM
Losses during OFF-time with active freewheeling:
M2
M1 D1
D2
ISense
IMotVOUT1
VS
M4
M3D3
D4
VOUT2
VS
M
Dramatic Reduction of losses are possible with active freewheeling.
Load current
I [A]
U[V]1
1
2
3
4
5
6
7
PLD=5.3W
PL=1.55W
GON=28.5S = --------135mΩ
0.5
GD~ 3 GON= 86 S~
Power losses arereduced due to
active freewheelingby 70%
2242V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Window at 14V or 42V ( Mid range )
Due to lower voltage, the commutation ( OFF-time ) takes3 times than the ON-time.
Power losses during ON-time:14V: 20W 42V: 2.2W
Power losses during OFF-time w/o active freewheeling:14V: 30W 42V: 6.9W
Power losses during OFF-time with active freewheeling:14V: 28W 42V: 3.1W
Arithmetic calculation of total losses withactive freewheeling :
14V: 26.2W 42V: 2.9W
Dramatic reduction of losses are possible with 42V in combination with active freewheeling.
Load current
typ. 6,6A
tON tOFF
2342V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Window at 14V or 42V
PWM: Reduction by factor 9 is possible in combination with active freewheeling
Summary:
A dramatic cost reduction is only possible in applications with standard switching behavior and low protection or logic requirements.
Output stages or power dissipation can be reduced by factor 9.
If PWM is required, reduction of the power loss in the body diodes is only by factor 3.Fast switching highside switches to achieve active freewheeling provide reduction of factor 9.
Logic, protection, pads are not reduced.
2442V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Dissipation versus Load Current at 14V
0
1 W
2 W
3 W
1A 10A
P v
I L
2A 5A 20A
PL
T j = 100°CVbb = 14V
28 W 70 W 140 W 280 W14 W
BTS 711200mΩ
BTS 721100mΩ
BTS 72560mΩ
BTS 64030mΩ
BTS 44218mΩ
BTS 6506,6mΩ
BTS 5504mΩ
BTS 5552,9mΩ
R ON (25°)
2542V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Dissipation versus Load Current at 42V
0
1 W
2 W
3 W
1A 10A
P v
I L
2A 5A 20A
T j = 100°CVbb = 42V
84 W 210 W 420 W 840 W42 W
BTS 200mΩ
BTS 723100mΩ
BTS 60mΩ
BTS30mΩ
BTS18mΩ
BTS 5604mΩ
BTS 6608mΩR ON (25°)
2642V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Power Semiconductors in 42V ApplicationsElectromagnetic Compatibility
Vbb changes from 14V to 42V(Pload = const., ton = const.)
- dv/dt increases by a factor of 3
- di/dt decreases by a factor of 3
- the current magnitude is a factor of 3 lower
current magnitude and switching times determine the conducted emission
Pload = const.Vout
IL
t
t
ton
ton
14V
42V
3
1
Conducted emission is 10dBµV lower at Vbb = 42V
Vbb = 42V
Vbb = 14V
Vbb = 42V
Vbb = 14V
di/dt
dv/dt
2742V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Effect on Conducted Electromagnetic Emission
T e rm in a l D is to rb a n c e V o lta g e S p e c tru m a t 2 0 0 H z -P W M a n d c o n s t. L o a d P o w e r w ith 1 4 V u n d 4 2 V P o w e r S u p p ly
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
1 1 0
1 2 0
0 .1 1 1 0
f / M H z
dBµV
V b b 1 4 V V b b 4 2 V E S G 1 E S G 2 E S G 3 E S G 4 E S G 5
L im its V D E 0 8 7 9 / 3 B U Z 2 0 R O N = 2 0 0 m ΩP lo ad = 2 1 W , P W M f = 2 0 0 H zt p /T = 0 ,5t r~ t f = 1 0 µ s
2842V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Blade Fuse versus Smart Power
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
1E+6
1 10 100 1000current in A
time
in m
s
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
1E+6
1 10 100 1000current in A
time
in m
s
Vbb = 14V Vbb = 42V
7,5A Blade Fuse, 25°C PROFET BTS640S2, 25°C
42V: device fire 42V: faster at high current
14V
42V
V
14V
42V
V<32V
2942V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Reliability at higher Voltages: Design Aspects
The decisive factor for design is not thevoltage but the electric field.
Different operation conditions needs changes in:
Technology Process (e.g. gate oxide thickness) Transistor Geometry (e.g. channel length) Product Design (e.g. guard rings)
3042V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Reliability Aspects at higher Voltages
Intrinsic Failure Mechanisms
like hot carrier effects, electromigration, oxide ageing
can not be avoided
- can be characterized by dedicated experiments
- have to be minimized with respect to their impact by defining corresponding design rules and constraints of operation
but
3142V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Failure Rates of Technologies in Mass ProductionSmart Switches and System ICs
Field Application Failure Rates
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
12V 45V 60V 75V 170V
failu
re ra
te (p
pm)
voltage classCMOS Bipolar SMART-SIPMOS BCD, 75V BCD, 170V
3242V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Failure Rates of Technologies in Mass ProductionStandard MOSFETs
Field Application Failure Rates
voltage class failed devicesn-channel 55V 8p-channel -50V 1n-channel 100V 0n-channel 200V 0n-channel 400V 0n-channel 600V 0n-channel 800V 0n-channel 1000V 0
1996/97 : without ESD and EOS
about 300 million parts
3342V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
SPT4/90VBr > 90V
S-SMART/80VBr > 80V
S-FET2/75VBr > 75V
Smart Power ICsVAZ > 80V
Smart Power SwitchesVAZ > 65V
FET / TEMPFETVBr > 75V
Gasoline Direct InjectionVNom = 70V / 42V /24V
Truck ApplicationsFast Inductance De-excitation
Truck ABS / TRC / VDCVNom = 42V / 24V
High Current Switches
Starter-GeneratorVNom = 42V / 24VHigh Speed PWMDC / DC Converter
TechnologyTechnology Product-familyProduct-family ConceptConcept ApplicationApplication
Semiconductor Technologies and Switches for new Power SystemsTechnologies - Products - Applications
9/98 TLE customized 9/00 TLE 6387 5V adj., 2A 6/00 TLE 6361 5+3.3+2.5V
6/98 BSP 365 5 ΩΩΩΩ 9/99 BSP 752R 200 mΩΩΩΩ 9/98 BTS 723 2* 95 mΩΩΩΩ 2/00 BTS 6163D 16 mΩΩΩΩ10/98 BTS 660P 9 mΩΩΩΩopen=
==
= BTS 560P 4 mΩΩΩΩ
Time Schedule ES /Time Schedule ES /ProductsProducts
open BTS 282Z-7 8.0 mΩΩΩΩ11/99 SPP 80N08S2 8.0 mΩΩΩΩ 9/99 SIPC 49S2N08 4.0 mΩΩΩΩ
3442V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Development in Smart Power: BTS 723 for 42VCurrent application: ABS for 24V heavy duty trucks
Comparison of mounting area Samples
BTS307: 250mΩΩΩΩ=
==
====
======
===each device139mm² each device 1/94278mm² together
BTS707: 2x250mΩΩΩΩ=
==
= 1/96132mm²
BTS723: 2x95mΩΩΩΩ 9/9852,5mm² BTS723
BTS707
BTS 307 BTS 307
3542V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Development in Smart Power: BTS 723 for 42VCurrent application: ABS for 24V heavy duty trucks
Old: BTS 307 1x250mΩΩΩΩ TO-220BTS 707 2x250mΩΩΩΩ P-DSO-20
New: BTS 723 2x95mΩΩΩΩ P-DSO-14
2xBTS 307 BTS 707 BTS723
100% 83% 75%
Costs of devices
3642V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Development in Smart Power: BTS 723 for 42VCurrent application: ABS for 24V heavy duty trucks
Old: BTS 307 1x250mΩΩΩΩ TO-220BTS 707 2x250mΩΩΩΩ P-DSO-20
New: BTS 723 2x95mΩΩΩΩ P-DSO-14
BTS 307 BTS 707 BTS723 BTS 307 BTS 707 BTS723
100% 83% 28% 100% 48% 7%
Costs x RDSON Mounting area x RDSON
3742V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Vbat = 14V PLoad= 2x63W Vbat = 42VVbat = 14V PLoad= 2x63W Vbat = 42V
RDSON = 2x30mΩΩΩΩ RDSON = 2x95mΩΩΩΩPLoss = 2x0.90W PLoss = 0.64WCosts = 100% Tj=100°C Costs = 60%
RDSON = 2x30mΩΩΩΩ RDSON = 2x95mΩΩΩΩPLoss = 2x0.90W PLoss = 0.64WCosts = 100% Tj=100°C Costs = 60%
Development in Smart Power: BTS 723 for 42VComparison: Same application for 14V and 42V
BTS723
PL= 2x63WEach channel 1.5A
BTS 640S2 BTS 640S2
PL= 2x63WEach channel 4.5A
3842V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
DC/DC-Converter with bidirectional current flow
VL = 12V
VH = 42V
C2
Q1
Q2
L1 RS
C1
Buck Converter continuos mode Operation: T
TVV ONQ1
H
L =
TT
TT-1
1VV OFFQ1
ONQ2L
H ==Boost Converter continuos mode Operation:
Example: TONQ1 = 0,286T42V12V =
0,714T42V
12V-42V =Example: TONQ2 =
iL
Q1 Q2
Q2 Q1
iL
-iL
t
t
3942V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
iQ11 iQ13 iQ13iQ12iQ12 iQ11
iQ11 iQ12 iQ12iQ11
t0 t0 + Tt0+ 21 T t0+ 2
3 T t0 + 2T
t0 Tt0+ 32
T t0+ 34
T 2Tt0+ 31
T t0+ 35
T
iL11 + iL12
iL12 = iQ11 + iQ21
iL11 = iQ12 + iQ22
iL13 = iQ13 + iQ23
iL11 + iL12 + iL13
iL11 = iQ11 + iQ21
iL12 = iQ12+ iQ22
iQ21
iQ22iQ21
iQ22 iQ23
Effect of interlaced buck operation with multi stage bridge configuration:decreasing current ripple at low voltage level, increasing average current at high voltage level
Dual stage bridge configuration
Triple stage bridge configuration
decreasing gap width effects smallerinput capacitance
smaller current rippleeffects a better EMI-performance
4042V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Topology of interlaced DC/DC-converter
VL=12V
VH = 42V
C2
RS1
VH = 42V
C2
Q13
Q23
C1
L12
L11
L13
Q12 Q11
Q22 Q21
RS2
RS1
RS3
Q12 Q11
Q22 Q21
RS2
C1
L11
L12
VL=12V
Triple stage bridge configuration Dual stage bridge configuration
4142V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Minimum configuration of control unitfor DC/DC-converter with bidirectional current flow
VL = 12V
VH = 42V
C2
Q1
Q2
L1 RS
C1
VCC
CurrentFlowUp/DownVH VSFG1 S2G2GND CS VL Standby
PowerGood
VCC
VSF2G12G22 S22 CS2required for each further bridge
logic compatible inputs
4242V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Example: Electric Power Steering System 14V to 42V
3-Φ-Bridge Driver
µCV-Reg 5V
&Watchdog
LogicM
14V
14V:IMotor = 90A
42V:IMotor = 30A
4342V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Example: Electric Power Steering System 14V to 42V
14V:IMotor = 90A
42V:IMotor = 30A
6 x
TO220VBRDSS=45VRon=4.5mΩPV= 300W
PVCosts
TO220
VBRDSS=75VRon=6.5mΩPV= 50W
D-Pak
VBRDSS=75VRon=20mΩPV= 150W
Dramatic decrease system costs in both cases
4442V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Example: Electric Power Steering System 14V to 42V
µCV-Reg 5V
&Watchdog
14V
14V: PV = 0,9 W42V: PV = 3,7 W
14V: PV = 0,45 W42V: PV = 1,85 W
Dramatic increase of Pv of 400% = New solution required!
Linear working voltage regulators for 5Vand 100mA.
Voltage supply 14V:
3-Φ-Bridge Driver
Logic
Driver either with 15V external voltage supply or linear working voltage regulatorincl. charge pump onboard for 50mA
4542V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Example: Electric Power Steering System 14V to 42V
µCV-Reg 5V
&Watchdog
External step down converter for 5V andcharge pump in driver
Proposals for voltage supply 42V:
Bridge Driver
14V
Same Pv as today
µC
DC/DC Conv.&
Watchdog Bridge Driver
42V 15V
5V
Additional costs - lower Pv
Or external step down converter for 5 and15 V without charge pump in driver
Energy supply realized by 14V net
Option: DC/DC conv. integrated in driver
4642V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Interlaced DC/DC-Converter - Driver solutions
3-Φ-Bridge Driver
DC/DC ConverterControl
IC
Logic
Discrete solution:
3-Φ-Bridge Driver
DC/DC ConverterControlLogic
Logic
Integrated solution:
4742V_Sammlung.pptAutomotive Power Semiconductors AI APDr. Graf
Semiconductor Technologies and Power Switches for newAutomotive Electrical Systems with higher Voltages
1. Semiconductor costs will be dramatically reduced due to
smaller chip areas and packages
2. Semiconductors become attractive for high power applications
3. Electronic fuse works also at 42V
4. The step from 14V to 42V takes us 10 years into future
5. Infineon Technologies is developing high voltage technologies for
42V automotive applications
6. Samples and products are available
7. Infineon Technologies is ready for new 42V designs
ConclusionConclusion