1 Fast high-voltage, high-current switching using stacked IGBTs By: Zarir Ghasemi Supervisor: Prof....
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Transcript of 1 Fast high-voltage, high-current switching using stacked IGBTs By: Zarir Ghasemi Supervisor: Prof....
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Fast high-voltage, high-current switching using stacked IGBTs
By: Zarir Ghasemi
Supervisor: Prof. S. J. Macgregor
Institute for Energy and Environment
University of Strathclyde
Glasgow
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Pulsed Power System with Examples of System Components
HVPowerSupply
Intermediate Energy Store
PFN Switch Load
Coaxial Cable,
Stripline Semiconductor Device,
Spark Gap
Plasma Drill,
Treatment Cell
3
Comparison of solid-state switching devices
Voltage Rating
Current Rating
Speed Availability Cost
Thyristor High High Low Readily available
Low
GTO High High Low Medium Medium
MOSFET Low Low High Readily available
Low
MCT High Medium Medium Special order
only High
MAGT Medium High High Special order
only High
SIT Medium Medium High Special order
only High
IGBT Medium Medium High Readily available
Low
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An X2 Non-Inverting Blumlein Cable Generator
a b c d
OUTPUT
CABLE 1 CABLE 2
CHARGING ELEMENTHV
SWITCH
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Problems associated with stacking IGBTs
• Signal synchronisation • Signal isolation (Magnetic or Optical )• Voltage sharing (Passive or Active snubbers)• Current sharing• Stack configuration• Diagnostic• Protection
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Photograph of 55 IGBT stack with voltage and current ratings of 2.5 kV and 250 A, respectively.
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Voltage across the device and output pulse for two 1.2 kV IGBTs
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Photograph of 10 kV, 400 A stack of IGBT modules consisting of 105 1.2 kV IGBTs.
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Photograph of 10 kV, 400 A stack of IGBT modules,
optically triggered
Over-voltage protection circuit
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Photograph of 3 kV, 2 kA Marx
generator
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Conclusion
• The IGBT was determined to be the preferred device for stacking
• IGBT’s can handle a peak current of five times their normal rating during short-pulse conducting, if they are driven by fast gate pulses.
• The dual degradation of the collector-emitter voltage exists in some of available IGBT devices.
• A prototype stack at voltage and current ratings of 10 kV and 400 A, with a voltage fall-time of about 45 ns was successfully tested.
• An optically-coupled stack of IGBTs with voltage and current ratings of 10 kV and 400 A was built and operated in a generator, used for Pulsed Electric Field (PEF) inactivation of microorganisms.
• A modular Marx generator, having an output voltage rating of 3 kV and a peak current rating of 2 kA, was designed and evaluated.