1200V GenX3™ IGBTs - IXYS Power
Transcript of 1200V GenX3™ IGBTs - IXYS Power
IXYSPOWEREfficiency Through Technology
1200V GenX3™ IGBTs
IXYS expands its GenX3TM insulated gate bipolar transistor (IGBT) portfolio to 1200
volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM IGBT
process and utilize IXYS’ advanced Punch-Through (PT) technology to provide lower
saturation voltages, lower switching losses, and higher surge current capabilities. This
new extension of GenX3TM IGBTs is a part of IXYS growing product line aimed at the high
voltage power conversion market.
To accommodate optimum part selection, designers have a choice in selecting between
three sub-classes denoted A3, B3, and C3. These classifications offer greater system
design flexibility and the opportunity for designers to reach the best compromise
between critical requirements such as switching frequency, efficiency, and cost. Co-
packed variants of these new devices are available with IXYS’ HiPerFREDTM (suffix “D1”)
and SONIC-FRDTM (suffix “H1”) ultra-fast recovery diodes providing exceptional fast
recovery and soft switching characteristics. These co-packed diodes minimize losses in
hard switching applications, while maintaining superior soft recovery characteristics to
minimize switching noise. Additional product attributes include avalanche capabilities
and a square reverse bias safe operating area, allowing the device to safely switch in a
snubberless hard switching application.
IXYS 1200V GenX3TM IGBTs are offered in various standard and ISOPLUS packages with
collector current ratings @ Tc=110oC from 20 amperes to 120 amperes. Standard
packages include the TO-263, TO-247, PLUS247, TO-220, TO-264 & TO-268. List of
possible applications include solar inverters, automatic voltage regulators, industrial
battery chargers, wind turbine inverters, capacitor discharge circuits, electronic
circuit breakers, resonant power conversion circuits, induction heating for industrial
processing, uninterruptible power supplies, motor drives, switch-mode power supplies,
power factor correction circuits, and welding machines.
march 2009
N E W P r O D U c T B r I E F
OVErVIEW
aPPlIcaTIONsPower inverters �UPs �motor drives �smPs �PFc circuits �Battery chargers �Welding machines �Lamp ballast �In-rush current protection circuits �DC choppers �Induction heating �
FEaTUrEsHigh current handling capability �International standard packages �Optimized for low conduction & �switching losses Ultra fast anti-parallel diode �(optional)ISOPLUS package options �Avalanche rated �square rBsOa �
BENEFITsSpace savings �High power density �Low gate drive requirement �
NEXT GENEraTION 1200V IGBTs FOr POWEr cONVErsION aPPlIcaTIONs
Q1
Q2
D1
D3
D2
D4
RectifierGate Drive Controller
L1
C1
Cr
Load
LrAC Input
Inverter Resonant Tank
DCAC
High Frequency AC
High Frequency Magnetic Field
Q2 Q4
Q3 Q5
C1
D1
L1
SOLAR
PANE L
Electric GridQ1
PFC and Gate Drive Controller
PFC Boost Converter
Full Bridge Inverter
PB120IGBTA3B3C3 1.3March 2009
Basic Induction Heating Power SystemGeneral solar Inverter
Bond wires
Leads
Copper Copper SolderCeramic
DCB
ChipMould
PartNumber Vces
Ic25Tc = 25oc
Ic110Tc = 110oc
Vce (sat)TJ = 25oc tfi typ Eoff typ RthJC
PackageType
a3-class n Ultra Low V(sat) IGBTs n Up to 3kHzIXGA20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-263
IXGH20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-247
IXGP20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-220
IXGH32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-247
IXGT32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-268
IXGK120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W TO-264
IXGX120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W PLUS247
IXGK120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W TO-264
IXGX120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W PLUS247
B3-class n Medium Speed IGBTs n 3kHz to 20kHzIXGA30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-263
IXGH30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-247
IXGP30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-220
IXGT30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-268
c3-class n High Speed IGBTs n 20kHz to 50kHzIXGA24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-263
IXGH24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247
IXGH24N120C3H1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247
IXGP24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-220
IXGR24N120C3D1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 1oC/W ISOPLUS 247
IXGH30N120C3H1 1200V 48A 24(tc100)A 4.2V 280ns 1.3mJ 0.5oC/W TO-247
IXGH40N120C3 1200V 75A 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247
IXGH40N120C3D1 1200 75V 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247
IXGH50N120C3 1200V 75A 50A 4.2V 315ns 2.1mJ 0.27oC/W TO-247
Application Circuits
IsOPlUsTm Packages with Internal Alumina DCB Isolation*
1200V GenX3Tm IGBTs Summary Table
This figure illustrates a general solar inverter circuit. This circuit topology
is comprised of a PFC boost converter stage and Full bridge power inverter
stage. Input power from a solar panel enters the power factor boost
converter and is further processed via a full bridge inverter power stage,
which in turn enters the electric grid.
This figure illustrates a general induction heating power system. This circuit
topology is comprised of a rectifier stage, high frequency power inverter stage
(in a form of a series half-bridge), and resonant tank circuit. An AC current
originating from a power source is converted to a DC value via the rectifier
stage. This DC value is then processed via a high frequency switching circuit
which is then administered to a heating coil element.
Provides 2500V, UL recognized isolation with superior • thermal performance (E153432).Improves termperature and power cycling capability.• Cost effective clip mounting.•
* IXYS Patented Packages, Patent No. 6,404,065* For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf