-20

-10

0

10

20

30

40

-30 -20 -10 0 10 20 30 40

Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at F

unda

men

tal

(dB

m)

Available Input Power(dBm)

4

5

6

7

8

9

-30 -20 -10 0 10 20 30 40

Transducer Gain vs. Available Input PowerSingle Tone Excitation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

10

11

12

13

14

15

16

17

-30 -20 -10 0 10 20 30 40

Power Gain vs. Available Input PowerSingle Tone Excitation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

-30 -20 -10 0 10 20 30 40

Drain Efficiency vs. Available Input PowerSingle Tone Excitation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

50 ohm TerminationSolid:Simulated & Points:Measured

Simulated:hv150d18swp1.txt & Measured:hv150d18.swpRev/Date: Rev0/0298

0

50

100

150

200

250

300

350

400

-30 -20 -10 0 10 20 30 40

Drain Current vs. Available Input PowerSingle Tone Excitation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30 40

Output Power at 2fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 2

fo(d

Bm

)

Available Input Power(dBm)

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30 40

Output Power at 3fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 3

fo(d

Bm

)

Available Input Power(dBm)

-1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-30 -20 -10 0 10 20 30 40

Input Return Loss vs. Available Input PowerSingle Tone Excitation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

50 ohm TerminationSolid:Simulated & Points:Measured

Simulated:hv150d18swp1.txt & Measured:hv150d18.swpRev/Date: Rev0/0298

-10

0

10

20

30

40

-30 -20 -10 0 10 20 30 40

Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at F

unda

men

tal

(dB

m)

Available Input Power(dBm)

6

8

10

12

14

16

18

-30 -20 -10 0 10 20 30 40

Transducer Gain vs. Available Input PowerSingle Tone Excitation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

8

10

12

14

16

18

20

-30 -20 -10 0 10 20 30 40

Power Gain vs. Available Input PowerSingle Tone Excitation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

80

-30 -20 -10 0 10 20 30 40

Drain Efficiency vs. Available Input PowerSingle Tone Excitation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

Simulated:hv1pmd18swp1.txt & Measured:hv1pmd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for PowerSolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

0

100

200

300

400

500

-30 -20 -10 0 10 20 30 40

Drain Current vs. Available Input PowerSingle Tone Excitation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

-50

-40

-30

-20

-10

0

10

20

30

-30 -20 -10 0 10 20 30 40

Output Power at 2fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 2

fo(d

Bm

)

Available Input Power(dBm)

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30 40

Output Power at 3fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 3

fo(d

Bm

)

Available Input Power(dBm)

-9

-8

-7

-6

-5

-4

-3

-2

-1

-30 -20 -10 0 10 20 30 40

Input Return Loss vs. Available Input PowerSingle Tone Excitation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

Simulated:hv1pmd18swp1.txt & Measured:hv1pmd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for PowerSolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

-10

0

10

20

30

40

-30 -20 -10 0 10 20 30 40

Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at F

unda

men

tal

(dB

m)

Available Input Power(dBm)

6

8

10

12

14

16

18

-30 -20 -10 0 10 20 30 40

Transducer Gain vs. Available Input PowerSingle Tone Excitation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

8

10

12

14

16

18

20

-30 -20 -10 0 10 20 30 40

Power Gain vs. Available Input PowerSingle Tone Excitation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

20

40

60

80

100

-30 -20 -10 0 10 20 30 40

Drain Efficiency vs. Available Input PowerSingle Tone Excitation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

Simulated:hv1emd18swp1.txt & Measured:hv1emd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

0

50

100

150

200

250

300

350

-30 -20 -10 0 10 20 30 40

Drain Current vs. Available Input PowerSingle Tone Excitation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

-50

-40

-30

-20

-10

0

10

20

30

-30 -20 -10 0 10 20 30 40

Output Power at 2fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 2

fo(d

Bm

)

Available Input Power(dBm)

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30 40

Output Power at 3fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 3

fo(d

Bm

)

Available Input Power(dBm)

-9

-8

-7

-6

-5

-4

-3

-30 -20 -10 0 10 20 30 40

Input Return Loss vs. Available Input PowerSingle Tone Excitation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

Simulated:hv1emd18swp1.txt & Measured:hv1emd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

-10

0

10

20

30

40

-30 -20 -10 0 10 20 30 40

Output Power at Fundamental vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at F

unda

men

tal

(dB

m)

Available Input Power(dBm)

6

8

10

12

14

16

18

-30 -20 -10 0 10 20 30 40

Transducer Gain vs. Available Input PowerSingle Tone Excitation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

8

10

12

14

16

18

20

-30 -20 -10 0 10 20 30 40

Power Gain vs. Available Input PowerSingle Tone Excitation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

80

-30 -20 -10 0 10 20 30 40

Drain Efficiency vs. Available Input PowerSingle Tone Excitation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

Simulated:hv1ped18swp1.txt & Measured:hv1ped18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for Power & EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

0

50

100

150

200

250

300

350

400

-30 -20 -10 0 10 20 30 40

Drain Current vs. Available Input PowerSingle Tone Excitation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

-50

-40

-30

-20

-10

0

10

20

30

-30 -20 -10 0 10 20 30 40

Output Power at 2fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 2

fo(d

Bm

)

Available Input Power(dBm)

-100

-80

-60

-40

-20

0

20

40

-30 -20 -10 0 10 20 30 40

Output Power at 3fo vs. Available Input PowerSingle Tone Excitation

Out

put P

ower

at 3

fo(d

Bm

)

Available Input Power(dBm)

-9

-8

-7

-6

-5

-4

-3

-2

-30 -20 -10 0 10 20 30 40

Input Return Loss vs. Available Input PowerSingle Tone Excitation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

Simulated:hv1ped18swp1.txt & Measured:hv1ped18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for Power & EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

-20

-10

0

10

20

30

40

-20 -10 0 10 20 30

Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tot

al O

utpu

t Pow

er(d

Bm

)

Available Input Power(dBm)

4

5

6

7

8

9

10

-20 -10 0 10 20 30

Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

10

11

12

13

14

15

16

17

-20 -10 0 10 20 30

Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

-20 -10 0 10 20 30

PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

PAE

(%)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

50 ohm TerminationSolid:Simulated & Points:Measured

Simulated:h1i50d18swp1.txt & Measured:h1i50d18.swpRev/Date: Rev0/0298

0

50

100

150

200

250

-20 -10 0 10 20 30

Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

0

10

20

30

40

50

60

-20 -10 0 10 20 30

Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

-100

-80

-60

-40

-20

0

20

-20 -10 0 10 20 30

Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Out

put P

ower

at H

ighe

st 3

IMD

(dB

m)

Available Input Power(dBm)

-1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-20 -10 0 10 20 30

Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

50 ohm TerminationSolid:Simulated & Points:Measured

Simulated:h1i50d18swp1.txt & Measured:h1i50d18.swpRev/Date: Rev0/0298

-10

0

10

20

30

40

-20 -10 0 10 20 30

Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tot

al O

utpu

t Pow

er(d

Bm

)

Available Input Power(dBm)

9

10

11

12

13

14

15

16

17

-20 -10 0 10 20 30

Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

10

12

14

16

18

20

-20 -10 0 10 20 30

Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

-20 -10 0 10 20 30

PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

PAE

(%)

Available Input Power(dBm)

Simulated:h1ipmd18swp1.txt & Measured:h1ipmd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for PowerSolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

0

50

100

150

200

250

300

350

-20 -10 0 10 20 30

Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

-20 -10 0 10 20 30

Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

-80

-60

-40

-20

0

20

40

-20 -10 0 10 20 30

Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Out

put P

ower

at H

ighe

st 3

IMD

(dB

m)

Available Input Power(dBm)

-8

-7

-6

-5

-4

-3

-2

-1

-20 -10 0 10 20 30

Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

Simulated:h1ipmd18swp1.txt & Measured:h1ipmd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for PowerSolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

-10

0

10

20

30

40

-20 -10 0 10 20 30

Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tot

al O

utpu

t Pow

er(d

Bm

)

Available Input Power(dBm)

8

10

12

14

16

18

-20 -10 0 10 20 30

Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

10

12

14

16

18

20

-20 -10 0 10 20 30

Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

-20 -10 0 10 20 30

PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

PAE

(%)

Available Input Power(dBm)

Simulated:h1iemd18swp1.txt & Measured:h1iemd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

0

50

100

150

200

250

300

-20 -10 0 10 20 30

Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

80

-20 -10 0 10 20 30

Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

-80

-60

-40

-20

0

20

40

-20 -10 0 10 20 30

Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Out

put P

ower

at H

ighe

st 3

IMD

(dB

m)

Available Input Power(dBm)

-9

-8

-7

-6

-5

-4

-3

-20 -10 0 10 20 30

Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

Simulated:h1iemd18swp1.txt & Measured:h1iemd18.swp

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for EfficiencySolid:Simulated & Points:Measured

Rev/Date: Rev0/0298

-10

0

10

20

30

40

-20 -10 0 10 20 30

Total Output Power vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tot

al O

utpu

t Pow

er(d

Bm

)

Available Input Power(dBm)

9

10

11

12

13

14

15

16

17

-20 -10 0 10 20 30

Transducer Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Tra

nsdu

cer

Gai

n(d

B)

Available Input Power(dBm)

10

12

14

16

18

20

-20 -10 0 10 20 30

Power Gain vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Pow

er G

ain

(dB

)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

-20 -10 0 10 20 30

PAE vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

PAE

(%)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for Power & EfficiencySolid:Simulated & Points:Measured

Simulated:h1iped18swp1.txt & Measured:h1iped18.swpRev/Date: Rev0/0298

0

50

100

150

200

250

300

-20 -10 0 10 20 30

Drain Current vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in C

urre

nt(m

A)

Available Input Power(dBm)

0

10

20

30

40

50

60

70

-20 -10 0 10 20 30

Drain Efficiency vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Dra

in E

ffic

ienc

y(%

)

Available Input Power(dBm)

-80

-60

-40

-20

0

20

40

-20 -10 0 10 20 30

Output Power at HIghest 3IMD vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Out

put P

ower

at H

ighe

st 3

IMD

(dB

m)

Available Input Power(dBm)

-9

-8

-7

-6

-5

-4

-3

-2

-20 -10 0 10 20 30

Input Return Loss vs. Available Input PowerTwo Tone Excitation with 1 MHz Separation

Inpu

t Ret

urn

Los

s(d

B)

Available Input Power(dBm)

1 Block HV1 LDMOS DeviceNumber of fingers: 56, Periphery: 5.04 mm

Frequency: 1 GHz, VDS

=26 v & IDS

=2.0 mA/mm

Tuned for Power & EfficiencySolid:Simulated & Points:Measured

Simulated:h1iped18swp1.txt & Measured:h1iped18.swpRev/Date: Rev0/0298

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