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Not for the Faint Hearted

Changes in noise structure by learning a balancing tasks

Instituto Nacional de Investigaciones Agronomicas

Formal theory of neutron induced fission

The nanostructuring of materials for device and sensor applications

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Analytical modelling for the RESURF effect in JI and SOI power devices

Synthesis and enhancement of the radionuclide tomographic section

Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells

CMOS compatible shorted anode auxiliary cathode lateral insulated gate bipolar transistors

Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel

A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb

Analysis of n-channel MOS-controlled thyristors

Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes

Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]