Post on 01-May-2022
Upcoming Technology Challenges for IC Manufacturing
Dr. Robert GuernseyDirector of Silicon Technology Strategy
Semiconductor Research and Development Center IBM Microelectronics
RWG CCNY030403.prz 3Apr03
IBM Microelectronics
RWG tcm030415.PRZ 15Apr03
Process Outlook Forum: April 15, 2003
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Three Key Trends in the Worldwide Information Technology Industry
1) Big growth in affordable computing power.
2) Smart networks and almost-free communication.
3) Big growth in mobile data devices and connectivity.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Semiconductor Technology: The Great Enabler
Continued exponential growth in circuit performance and density.Continued reduction in circuit power.SiGe transistors for very high frequency 350 GHz
Integration of CMOS, SiGe, and DRAM to enable System-On-Chip.Manufacturing on 300mm for increased productivity and reduced cost.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
CMOS Chip Structure
CMOS Transistors
Contact Studs
Copper Wires
Solder Bump or C4
Chip Wiring Insulation
Plastic Package
N P
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
CMOS Circuit Performance Trends
1995 2000 2005 2010 2015Year
1
10
Rel
ativ
e Si
licon
Cap
abili
ty G
row
th
Bulk CMOS and aluminum Interconnect, Performance enhancement saturates due to device non-scalability, and interconnect delay
New Transistor Structures
Copper and Low K insulator reduce interconnect delay
SOI devices
Few can do
Many can do
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Oxide thickness is approaching a few atomic layerssilicon bulk field effect transistor (FET)
Fundamental Atomic Limit to Scaling
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Semiconductor Business: Innovation Driven Industry
70's 80's 90's 00's 10's
Device DesignOptimized voltage scalingCMOS replaces BiCMOS in DP applications
StructureSTI, Planer InterconnectLithography Limited
Copper InterconnectSilicon on Insulator
New Materials and Device Structures
eDRAM in High Perf LogicAnalog / Mixed SignalMRAM
Memory SubsystemSystem on a Chip (SOC)
New Functional Integration
New Architecture / Circuit Concepts
CMOS Scaling, Lithography Driven
Low K, SiLKSiGe
Many can do. Few can do.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
IBM Semiconductor Research & Development Center
Mission: Provide Leading Edge Cost Competitive Semiconductor Process Technology for Product Applications
ManufacturingSRDCResearch
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
IBM Semiconductor Technologies
Most Advanced Lithography, New Materials, & ProcessesLithography
Early access to exposure toolsMask making expertiseResolution enhancement techniquesState of the art resist research
S Technologies Highest performance CMOS
technologyLowest active powerFuture eDRAM integration
SF Technologies Highest performance bulk devices
and interconnectsLow active/standby powerCompetitive density
Copper Metal GateLow k FinFET SOI Strained Si High k Gate Oxide
System-on-ChipeDRAM RF / analog PassivesASIC
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Silicon On Insulator
Enhanced and colorized SEM view of SOI device in cross-section with wiring.
Advantages over Bulk Si:20 to 30% performance increase
One-generation gain at same lithography
Lower power dissipationMinimal added cost (10%)No yield impact
SOI-based structures are key to scaling into sub-100nm generations.SOI is highly appropriate for ultra-low power 1V applications.SOI is the highest performance CMOS technology.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Strained SiliconSSCMOS: SiGe Microstructure and Thermal Stability of Device Structures
Speeds up electron flow by 70%Improved chip performance 35%Compatible with SOI
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
High-k Gate Dielectric and Strained Silicon
Relaxed SiGe
Graded SiGe Buffer
Si substrate
Strained SiChannel
HfO2 or SiO2
~1.
5 µm ~10 nm
PolyGate
poly gate spacer
Relaxed Si0.85Ge0.15
Strained Si channel
HfO2
poly gate spacer
Relaxed Si0.85Ge0.15
Strained Si channel
HfO2Relaxed SiGe
Graded SiGe Buffer
Si substrate
Strained SiChannel
HfO2 or SiO2
~1.
5 µm ~10 nm
PolyGate
poly gate spacer
Relaxed Si0.85Ge0.15
Strained Si channel
HfO2
poly gate spacer
Relaxed Si0.85Ge0.15
Strained Si channel
HfO2Example of a strained Si FET with high-k gate dielectric
Achieve the high performance of strained silicon (30% enhancement) with the low leakage of thicker, high-k gate insulator (1000x lower leakage) for maximum performance with minimum standby power.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
IBM's First FinFET Hardware
First IBM FinFET. Fried et al, 2001 Device Research Conference
Ed Nowak
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Carbon Nanotube FET (1.4nm diameter)
Transconductance = 7 x10-7 A/VHole Mobility comparable to Si MOSFET at 60-100 cm2/VsContact resistance comparable to Si MOSFET
R. Isaac
Carbon Nanotube Voltage Inverter
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
FSG
Lower-k
Low-k
Ultra Low-K
Decreasing Effective K
2000 20032002 2004 20062005 200820072001
On-Chip Wiring Technology Roadmap
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
On-Chip Wiring Technology Example of IBM Back-End-Of-Line Stack with 8 Wiring Levels
VLM4V3M3V2M2V1M1CA
MC
VQ
LM
VJ2x pitch fatwire
2x pitch fatwire
4x pitch fatwire
MJ
MK
MQ
VK
4x pitch fatwire
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
A "No-Fear" Device / Interconnect Migration Roadmap
Time
Perf
orm
ance
Bulk Silicon
Aluminum Wiring
Bulk SiliconCopper Wiring
SOICopper Wiring
Ultra Thin SOI
Copper Wiring/LoK
Ultra Thin SOIStrained Si
Cu/Lo(wer)KUltra Thin SOI
Strained SiHiK
Metal Gate
Cu/UltraLoK FD SOIStrained SiDG-FinFet
HiK Metal Gate
Air GAP BEOL
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
220nm180nm
130nm90nm
65nm45nm
35nm
Technology Generation
0
0.5
1
1.5
2(a
t giv
en p
erfo
rman
ce)
Pow
er D
ensi
ty
Bulk
SOI
Strained-Si
Double Gate
Power density flat or decreasing by means of
Bulk SOI Strained Silicon Double Gate
Power Density Trend
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Optical Deep UV (248nm) Use through 180nm - 130nm Litho Generations
Optical Deep UV (193nm)Use through 130nm - 100nm Litho Generations
157nm Optical and/or Next Generation Litho: EUV, E-beam projection, ...
Use for <100nm Litho GenerationsSignificant investmentIndustry consensus required
Sustaining the Lithography Trend
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Exposure tools
Mask TechnologyTools: writers, inspection, & repair.Materials
Photoresist Materials
Resolution Enhancement TechniquesModel-based optical proximity correctionSub-resolution assist featuresAlternating phase shift mask
Elements for Lithography Leadership
Lithography Tool Options
80nm
70nm
60nm
50nm
2002
193nm, 0.75NA
193nm, 0.85NA
193nm, 0.92NA
157nm, 0.85NA157nm, 0.92NA
EPL beta
EPL prod. EUVL prod.
EUVL beta
2003 2004 2005 2006 2007
Res
olut
ion
Lithography Tool OptionsLithography Tool Options
80nm
70nm
60nm
50nm
2002
193nm, 0.75NA
193nm, 0.85NA
193nm, 0.92NA
157nm, 0.85NA157nm, 0.92NA
EPL beta
EPL prod. EUVL prod.
EUVL beta
2003 2004 2005 2006 2007
Res
olut
ion
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
CMOS Circuit Density Outlook
Die Sizes up to 400 sq-mm
350nm Litho5 Metal Levels
180nm Litho7 Metal Levels
130 Litho9 Metal Levels
90nm Litho10 Metal Levels
250nm Litho6 Metal Levels
Transistors/chip1E+9
1E+8
1E+7
1E+6
1E+51995 1997 1999 2001 2003
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
LogCost/Function
Integration level (# ckts, bits)
.35um
.25um
.18um
Key Question:What functions to integrate?
H/P CMOS, L/C CMOSFlash, DRAMMixed SignalI/O interface mgmt"Passives"
Issues:Migration of designsTechnology conflictsCustomer-supplier relationship & IPSys-on-Chip vs. Sys-in-PackageTest
X
X
X
R C Lange
Optimum Integration Level Leads to System-On-Chip
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
IBM SF Technology Platform
eDRAMRFCMOS
! CMOS Logic: ! High-performance (K)! Low active power (MP)! Low standby power (ULP)
! Communication CMOS! Analog & RF CMOS• Passive R/L/C devices• RF models and design kit
! System on a chip! Embedded DRAM! Embedded dense SRAM
Base
HighPerformance
Low Power
AnalogDenseSRAM
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Silicon Germanium Technology
Result:Cost and performance leadership in high frequency device technology.
Re-use present CMOS toolset. Add Silicon Germanium alloy base. 300-500% performance gain. Base contact
Emitter, N+Nitride
Oxide
Collector contact
Subcollector, N+
SIGe BASE, P+ Collector, N+
Bandgap EngineeringBase contact
Emitter, N+NitrideOxide
Collector contact
Subcollector, N+
BASE, P+ Collector, N+
5 years of fundamental research into materials science.
Bipolar transistoron BiCMOS chip Emitter
CollectorBase
E
C
B
EmitterCollector
Base
E
C
B
Now running at 350 GHz.
Also need high Q passives and design kits.
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
System-on-Chip ExampleOpportunity for system integration
of digital CMOS, memory, radio frequency IC & intermediate
frequency bipolar/CMOS
Substantial system functionality, cost, power & density improvements achievable with technology integration10X cost : 5X power
1998
100 - 200 components
R/F
Baseband I/F
CMOS BiPolar GaAs
Baseband
RF / IF
2000
~ 10 components 2003
1 component
Opportunity for system integration of digital CMOS, memory, radio, frequency IC & intermediate frequency SiGe BiCMOS.
Substantial system functionality, cost, power & density improvements achievable with technology integration.
Achieve 1/10 the cost and 1/5 the power.
1998
2000
2003
CMOS Bipolar GaAs100-200 Components
10 Components
1 Component
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
Long lead time for new materialsAverage of 10 years from research to manufacturing.Reliability learningYield learningMust have options for risk mitigation
Need industry-wide acceptance and infrastructure build-up to realize manageable cost.
Need early involvement of equipment makers and material suppliers.
Key Challenges for the Introduction of New Materials, Processes, and Tools
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IBM Microelectronics
RWG tcm030415.PRZ 15Apr03Process Outlook Forum: Upcoming Technology Challenges for IC Manufacturing
The semiconductor industry focus is shiftingFrom performance alone To performance-power-flexibility.
We are entering an era of differentiation by innovationMoving from traditional scaling that many can do.To new materials and transistor structures that few can do, andTo greater functional integration.
Early involvement by equipment and material suppliers is required to achieve a successful semiconductor ecosystem.
Summary
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