Simple piezoresistive pressure sensorsensor

Simple piezoresistive accelerometer

Simple capacitive accelerometerC(x)=C(x(a))

Cap waferCap wafer

C f b i hi d ili• Cap wafer may be micromachined silicon, pyrex, …S t ti d d i• Serves as over-range protection, and damping

• Typically would have a bottom cap as well.

Simple capacitive pressure sensorC(x)=C(x(P))

ADXL50 Accelerometer

• +-50g• PolysiliconPolysilicon

MEMS & BiCMOSBiCMOS

• 3x3mm dieI i f• Integration of electronics!

ADXL50 Sensing Mechanismg• Balanced differential capacitor output• Under acceleration, capacitor plates move changing

capacitance and hence output voltagecapacitance and hence output voltage• On-chip feedback circuit drives on-chip force-feedback to re-

center capacitor plates (improved linearity).

Analog Devices PolysiliconAnalog Devices Polysilicon MEMS

ADXL50 – block diagram• http://www.analog.com/en/mems-and-sensors/imems-accelerometers/products/index.html

MEMS Gyroscope Chip

SenseProof

Digital OutputSense

CircuitProof MassRotation

induces Coriolis

l ti

Electrostatic

acceleration

Drive Circuit

J. Seeger, X. Jiang, and B. Boser

MEMS Gyroscope ChipMEMS Gyroscope Chip

J. Seeger, X. Jiang, and B. Boser

Two-Axis Gyro, IMI(Integrated Micro Instruments Inc.)/ADI (fab)

Single chip six-degree-of-freedom inertial i ( IMU) d i d b IMImeasurement unit (uIMU) designed by IMI

principals and fabricated by Sandia National Laboratories

TI Digital Micromirror Deviceg

www.dlp.com

NEU/ADI/Radant/MAT Microswitcheshttp://www.radantmems.com/radantmems/switchoperation.html

Gate

p p

Surface MicromachinedPost-Process Integration with CMOS20 100 V El i A i

Drain SourceBeam20-100 V Electrostatic Actuation~100 Micron Size

Beam

Drain Gate Source

Beam

SEM of NEU microswitchGate

Seal ringLanding MEMS

Drain Source Feedthrough Dielectric

ring

Microbump

Landingring

Package Substrate

MEMS

MAT Microswitch

Contact DetailContact End of Switch

Spectrometer cross-section

Surface MicromachinedSpring System

ElectrostaticActuator Plates

9/11/2008

Fabricated Microspectrometers

9/11/2008

Intensity vs. Wavelength

λλ 515515 λ λ = 575nm= 575nm

1

1.2λλ =515 nm=515 nm

FWHM = 25nmFWHM = 25nm

RP = 21RP = 21

λ λ 575nm 575nm

FWHM = 30nmFWHM = 30nm

RP = 20RP = 20λλ =625nm=625nm

FWHM = 39nmFWHM = 39nm

RP = 16RP = 16

0.8

b. u

nits

)

0.4

0.6

nten

sity

(arb

0.2

In

0450 500 550 600 650 700 750

Wavelength (nm)

Packaged Plasma SourceTop View

Die in Hybrid Package

Side ViewSide View

Fabrication

PRPR

Glass WaferCr/Au/TiW

Expose/Dev.TiW etch

ElectroplateGold

PR stripTiW/Au/Cr etch

Bond to 10 mm diam.glass chamberspiral coil

SEM of Interdigitated glass chamberspiral coil

interdigitated capacitor

to vacuum system

Capacitor Structure

Optical MEMS Vibration SensorsOptical MEMS Vibration Sensors

Uniform cantilever beam Foster Miller - Diaphragm

Cantilevered paddle Cantilevered supported diaphragm

Optically interrogated MEMS sensorsOptically interrogated MEMS sensors

55 µm length cantilevered paddle after 7 hours of B.O.E. releasing and lifted up with

a 1µm probe (~0.35µm thick, 2µm gap)

Courtesy Connie Chang-Hasnain

Courtesy Connie Chang-Hasnain

Micromachining Ink Jet Nozzles

Microtechnology group, TU Berlin

(UCLA, Fan)

(Gruning)

Gene chips, proteomics arrays.

NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow.

RoukesGGroupCal TechTito

From Ashcroft andMermin, SolidMermin, Solid State Physics.

Other: NSF-Funded NSEC, Center for High-Rate Nanomanufacturing (CHN): High-rate Directed Self-Assembly of

NanoelementsNanoelements

Proof of Concept Testbed

Nanotube Memory DevicePartner: NanteroNanotemplate: Partner: Nantero first to make memory devices using nanotubes

Properties: nonvolatile, high speed at <3ns lifetime (>1015 cycles)

Nanotemplate:Layer of assembled

nanostructures transferred to a wafer. Template is intended

at <3ns, lifetime (>1015 cycles), resistant to heat, cold, magnetism, vibration, and cosmic radiation.

to be used for thousands of wafers.

Switch Logic, 1996, Zavracky, Northeastern

Inverter NOR Gate

Simple Carbon Nanotube Switch

Diameter: 1.2 nmElastic Modulus: 1 TPaElectrostatic Gap: 2 nmBinding Energy to Substrate: 8.7x10-20 J/nm

Length at which adhesion = restoring force: 16 nmActuation Voltage at 16 nm = 2 VgResonant frequency at 16 nm = 25 GHzElectric Field = 109 V/m or 107 V/cm + Geom.

(F-N tunneling at > 107 V/cm)Stored Mechanical Energy (1/2 k x2 ) = 4 x 10-19 J = 2 5 eVStored Mechanical Energy (1/2 k x2 ) = 4 x 10-19 J = 2.5 eV4 x 10-19 = ½ CV2 gives C = 2 x 10-19 << electrode capacitance! Much more energy stored in local electrodes than switch.

Biological Nanomotor