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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 1 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss )
• Reduced switching and conduction losses• Ultra low gate charge (Qg )
• Avalanche energy rated (UIS)
• Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.b. VDD = 50 V, starting TJ = 25 °C, L = 13.8 mH, Rg = 25 Ω, I AS = 2.5 A.c. 1.6 mm from case.d. ISD ≤ ID, dI/dt = 100 A/µs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max. 650
RDS(on) max. at 25 °C ( Ω ) VGS = 10 V 0.6
Qg max. (nC) 40
Qgs (nC) 5
Qgd (nC) 9
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
GDS
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free SiHP7N60E-E3
Lead (Pb)-free and Halogen-free SiHP7N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS
600
VDrain-Source Voltage TC = - 25 °C, ID = 250 µA 575
Gate-Source Voltage VGS ± 30
Continuous Drain Current (TJ = 150 °C) VGS at 10 VTC = 25 °C
ID7
A TC = 100 °C 5
Pulsed Drain Current a IDM 18
Linear Derating Factor 0.63 W/°C
Single Pulse Avalanche Energy b E AS 43 mJ
Maximum Power Dissipation PD 78 WOperating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-Source Voltage Slope TJ = 125 °CdV/dt
70 V/ns
Reverse Diode dV/dt d 3
Soldering Recommendations (Peak Temperature) c for 10 s 300 °C
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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 2 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62°C/W
Maximum Junction-to-Case (Drain) RthJC - 1.6
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 609 - - V
VDS Temperature Coefficient ∆ VDS /TJ Reference to 25 °C, ID = 1 mA - 0.68 - V/°C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 µA 2 - 4 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VGS = ± 30 V - - ± 1 µA
Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 1
µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.5 A - 0.5 0.6 Ω
Forward Transconductance gfs VDS = 50 V, ID = 3.5 A - 1.9 - SDynamic
Input Capacitance Ciss VGS = 0 V, VDS = 100 V,
f = 1 MHz
- 680 -
pF
Output Capacitance Coss - 39 -
Reverse Transfer Capacitance Crss - 5 -
Effective Output Capacitance, EnergyRelated a
Co(er)
VDS = 0 V to 480 V, VGS = 0 V
- 34 -
Effective Output Capacitance, TimeRelated b
Co(tr) - 100 -
Total Gate Charge Qg
VGS = 10 V ID = 3.5 A, VDS = 480 V
- 20 40
nCGate-Source Charge Qgs - 5 -
Gate-Drain Charge Qgd - 9 -
Turn-On Delay Time td(on)
VDD = 480 V, ID = 3.5 A, VGS = 10 V, Rg = 9.1 Ω
- 13 26
nsRise Time tr - 13 26
Turn-Off Delay Time td(off) - 24 48
Fall Time tf - 14 28
Gate Input Resistance Rg f = 1 MHz, open drain - 1.1 - Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
- - 7
A
Pulsed Diode Forward Current ISM - - 18
Diode Forward Voltage VSD TJ = 25 °C, IS = 3.5 A, VGS = 0 V - - 1.2 V
Reverse Recovery Time trrTJ = 25 °C, IF = IS = 3.5 A,dI/dt = 100 A/µs, VR = 20 V
- 230 - ns
Reverse Recovery Charge Qrr - 1.9 - µC
Reverse Recovery Current IRRM - 14 - A
S
D
G
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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 3 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Coss and Eoss vs. V DS
VDS, Drain-to-Source Voltage (V)
I D ,
D r a i n - t o - S o u r c e C u r r e
n t ( A )
0
4
8
12
16
20
0 5 10 15 20 25 30
TOP 15 V14 V13 V12 V11 V10 V
9 V8 V7 V
6 V
BOTTOM 5 V
TJ = 25 °C
3
6
9
12
VDS, Drain-to-Source Voltage (V)
I D ,
D r a i n - t o - S o u r c e C u r r e n t ( A )
00 5 10 15 20 25 30
TJ = 150 °C
5 V
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 VBOTTOM 6 V
VGS, Gate-to-Source Voltage (V)
I D ,
D r a i n - t o - S o u r c e C u r r e n t ( A )
0
4
8
12
16
20
0 5 10 15 20 25
TJ = 25 °C
TJ = 150 °C
TJ, Junction Temperature (°C)
R D S ( o n ) , D r a i n - t o - S o u r c
e
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
O n R e s i s t a n c e ( N o r m a l i z e d )
0
0.5
1
1.5
2
2.5
3
VGS
= 10 V
ID = 3.5 A
VDS, Drain-to-Source Voltage (V)
C a p a c i t a n c e ( p F )
100
10
0 200 400
10 000
1
1000
100 300 500 600
Ciss
Coss
Crss
VGS
= 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds Shorted
Crss = CgdCoss = Cds + Cgd
0
1
2
3
4
5
6
5
50
500
0 100 200 300 400 500 600
E
o s s
( µ J )
C o s s
( p F )
VDS
Coss
Eoss
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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 4 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Qg, Total Gate Charge (nC)
V G S ,
G a t e - t o - S o u r c e V o l t a g e ( V )
16
4
0
24
20
12
8
0 10 20 30 40
VDS = 480 V
VDS = 300 V
VDS = 120 V
VSD, Source-Drain Voltage (V)
I S D ,
R e v e r s e D r a i n C u r r e n t ( A )
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TJ = 150 °C TJ = 25 °C
VGS
= 0 V
VDS, Drain-to-Source Voltage (V)
I D ,
D r a i n C u r r e n t ( A )
* VGS
> minimum VGS
at which RDS(on) is specied
IDM
= Limited
BVDSS Limited
Operation in this AreaLimited by R
DS(on)
100 µs
1 ms
10 msTC = 25 °C
TJ = 150 °C
Single Pulse
SLimited by R
D (on)*
0.01
0.1
1
10
100
1 10 100 1000
TC, Case Temperature (°C)
I D ,
D r a i n C u r r e n
t ( A )
25 50 75 100 125 150
2
4
6
8
0
TJ, Junction Temperature (°C)
V D S ,
D r a i n - t o - S o u r c e
- 60 0 160
B r e a k d o w n V o l t a g e ( V )
- 40 - 20 20 40 60 80 100 120 140
525
550
575
600
625
650
675
700
725
750
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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 5 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Switching Time Test Circuit
Fig. 14 - Switching Time Waveforms
Fig. 15 - Unclamped Inductive Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
Fig. 17 - Basic Gate Charge Waveform
Fig. 18 - Gate Charge Test Circuit
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
T h e r m a l I m p e d
a n c e
Pulse Time ( s )
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.05
0.02
Pulse width ≤ 1 µsDuty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
RG
IAS
0.01 Ωtp
D.U.T
LVDS
+
- V
DD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
QGS QGD
QG
VG
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IG ID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
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SiHP7N60Ewww.vishay.com Vishay Siliconix
S15-0291-Rev. C, 23-Feb-15 6 Document Number: 91508
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91508 .
P.W.Period
dI/dt
Diode recoverydV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recoverycurrent
Body diode forwardcurrent
VGS = 10 V
a
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D =P.W.
Period
+
-
+
+
+-
-
-
Peak Diode Recovery d V/ dt Test Circuit
VDD
• dV/dt controlled by Rg• Driver same type as D.U.T.
• IS
D
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.Circuit layout considerations
• Low stray inductance
• Ground plane• Low leakage inductance
current transformer
Rg
Note
a. VGS
= 5 V for logic level devices
VDD
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Package Informationwww.vishay.com Vishay Siliconix
Revison: 14-Dec-15 1 Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension includingprotrusion), heatsink hole for HVM
M*
321
L
L ( 1 )
D
H ( 1 )
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
bC
DIM.MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155Q 2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Package Picture
A SE Xi’an
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Revision: 02-Oct-12 1 Document Number: 91000
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