7. EUV AT HIGH REPITITION RATE

Laser Produced Plasma EUV Source Development for Mass

Production of sub-20nm Devices Igor V. Fomenkov, D. C. Brandt, D. W. Myers, D. J. Brown, A. I. Ershov, R. L. Sandstrom, G. O. Vaschenko, N. R. Böwering, P. Das, V. Fleurov, K. Zhang, S. N. Srivastava, I. Ahmad, C. Rajyaguru,

S. De Dea, W. J. Dunstan, P. Baumgart, T. Ishihara, R. Simmons, R. Jacques, R. Bergstedt, P. Porshnev, C. Wittak, R. Rafac, J. Grava, A. Schafgans, Y. Tao, B. La Fontaine, and S. E. Richardson

Cymer Inc., 17075 Thornmint Ct., San Diego, CA, 92127, USA

2012

EUVL

Symposium

Brussels

Belgium

1. LASER-PLASMA SOURCE CONFIGURATION

3. POWER ROADMAP

2. 8. COLLECTOR LIFETIME

9. SUMMARY

5. DEBRIS MITIGATION

6. DROPLET STABILITY

HVMI FIELD PERFORMANCE‘

In the Field: 9-13W Average Power with <0.5% Dose Stability

• SEMI E10 availability of sources in field approximately ~60%

• Droplet stability <3nm for 80% of days YTD

• Capability for >100 wafers per day throughput

Improved droplet stability with new droplet generator steering

(σy, σz: 2.8, 3.2 to 1.1, 1.3 μm)

MTBS increasing, Uptime in slight decline

(SEMI E10 data)

158W raw power and 190W peak raw power

shown in low duty cycle demonstration on LT1

~1.9 mJ EUV per pulse demonstrated at 50kHz

on Pilot 7, equivalent to 90W EUV power

4. EUV POWER SCALING

EUV POWER CAPABILITY DEMO

2012 International Symposium on EUVL: Brussels, Belgium October 1, 2012

DROPLET GENERATOR STEERING IMPROVEMENTS

Tin cleaning during source operation

Major Improvements to Collector Lifetime

• 10 HVM I sources installed and operational

• HVM I source EUV average power ~9-13W in field with better than <0.5%

dose stability and capability of >100 wafers per day productivity

• Collector lifetime of 45 billion pulses achieved in field

• 50W expose power demonstrated with closed loop control for over five

hours of continuous operation; up to 90W in-burst power demonstrated;

160W peak raw power shown on development tool

• First HVM II source for ASML NXE 3300 scanner is delivered, integration of

the next several is in process

This work is supported by our technology partners:

IMPROVED COLLECTOR LIFETIME IN FIELD Three major subsystems

of source architecture:

- Drive Laser

- Beam Transport System

- Source Vessel

HVM II oriented at a steeper angle than HVM I,

enabling ~2x higher optical transmission

in scanner

Additional power amplifier on HVM II system

enables higher laser power than HVM I

Source

Vessel

Beam Transport

System

Drive

Laser

RF Generators

Heat

Exchangers

HVM I HVM II

HVM II

MULTIPLE MLM COATING TESTS IN PARALLEL

Collector sample holder

(54 samples)

HVM I

Source Model HVM I HVM II

Average Laser Power (kW) 20 23 24 31 43

In-Band CE (%) 2.0 2.0 2.5 2.5 3.0

Clean EUV Power (W) 60 80 125 160 250

0 20 40 60 80 100 120 140 160 180 200

0

250

500

750

1000

Freq

uenc

y

EUV Power @ IF (W)

158W

24 kW CO2 Power at 3% DC for >15 minutes

Collector sample holder

(92 samples)

45 Bp 0 Bp

STABILITY MAINTAINED WITH REP RATE INCREASE

Repetition rate can be increased to >60kHz without disrupting next droplet

(Image shows 30 um droplets at 120 kHz with 500 um droplet spacing)

Near-linear laser power scaling up to 85% duty

cycle shown on both Pilot 7 and 9

0

20

40

60

80

100

0

10

20

30

40

20

12

06

20

12

10

20

12

14

20

12

18

20

12

22

20

12

26

20

12

30

20

12

34

Up

time

(%)

MT

BS

(h

ou

rs)

ISO Week

Availability Performance 13-week rolling average of 5 field sites

MTBS

Uptime0%

20%

40%

60%

80%

100%

0

5

10

15

20

0.6

5

3.1

5

5.6

5

8.1

5

10

.65

13

.15

15

.65

18

.15

20

.65

23

.15

25

.65

28

.15

30

.65

33

.15

Fre

qu

en

cy

Daily Y Droplet Stability (1-σ)

Droplet Stability Daily average at 5 field sites

Frequency

Cumulative %

Drive Laser for HVM II

HVM I

Architecture

~1.9mJ EUV pulse energy and 158W EUV power demonstrated on pilot sources at Cymer

• ~2x increase in lifetime, compared to six months prior

• No degradation in collector reflectivity up to 40 Bp

~2x improved

capacity for

testing multiple

MLM coatings in

parallel

0 20 40 60 80 1000

2000

4000

6000

8000

10000

12000

14000

16000

Power P7 (W)

Power P9 (W)

La

ser

Po

we

r, W

att

Duty Cycle, %

0.006 0.008 0.010 0.012 0.0140.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

EU

V p

uls

e e

ne

rgy,

mJ

Time, sec

EUV pulse energy

LASER POWER ROLL-OFF EUV PULSE ENERGY

Photos of collector sample holder and far-field EUV images of samples under test

(54 sample holder left, 92 sample holder right)

New steering leads to improved dose stability SEM image of sample

before installation into

source chamber with 32 nm

thick layer of tin deposited

P-SO-01

SEM image of sample

above after source

operation, thickness of tin is

2 nm, measured with

X-Ray Fluorescence (XRF)

EUV distributions

measured by scanner