Fig. 8. (a) Typical photograph of LED-I without current driving.

Post on 05-Jan-2016

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Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics. Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively. - PowerPoint PPT Presentation

Transcript of Fig. 8. (a) Typical photograph of LED-I without current driving.

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Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics.

LED1 LED2

Vf 3.1V 3.5V

WPE 29.2% 21.8%

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Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively.

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Conclusion

GaN-based blue LEDs using the InGaN insertion layer can effectively improve device performances including the endurance of ESD and light output power.

The better current spreading effect is the dominant factor for contributing to the improvement of device performance.

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References

維基百科http://en.wikipedia.org/wiki/Nitrogen-vacancy_center

半導體技術天地http://www.2ic.cn/html/82/t-326282.html

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Thanks for your attention