Fig. 8. (a) Typical photograph of LED-I without current driving.

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9 Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics. LED1 LED2 Vf 3.1V 3.5V WPE 29.2 % 21.8 %

description

Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics. Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively. - PowerPoint PPT Presentation

Transcript of Fig. 8. (a) Typical photograph of LED-I without current driving.

Page 1: Fig. 8. (a) Typical photograph of LED-I without current driving.

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Fig. 7. Typical I-V characteristics and dynamic resistances of the LED-I and LED-II. The inset shows the forward I-V characteristics.

LED1 LED2

Vf 3.1V 3.5V

WPE 29.2% 21.8%

Page 2: Fig. 8. (a) Typical photograph of LED-I without current driving.

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Fig. 8. (a) Typical photograph of LED-I without current driving. (b) and (c) Typical near-field emission images of the LED-I and the LED-II, respectively.

Page 3: Fig. 8. (a) Typical photograph of LED-I without current driving.

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Conclusion

GaN-based blue LEDs using the InGaN insertion layer can effectively improve device performances including the endurance of ESD and light output power.

The better current spreading effect is the dominant factor for contributing to the improvement of device performance.

Page 4: Fig. 8. (a) Typical photograph of LED-I without current driving.

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References

維基百科http://en.wikipedia.org/wiki/Nitrogen-vacancy_center

半導體技術天地http://www.2ic.cn/html/82/t-326282.html

Page 5: Fig. 8. (a) Typical photograph of LED-I without current driving.

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Thanks for your attention