Post on 04-Apr-2018
7/29/2019 2N3439_40
1/2
2N34392N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3066Issue: 1
7V1A
0.5A
5W
1W
65 to 200C
200C
HIGH VOLTAGENPN TRANSISTORS
FEATURES
DUAL SILICON PLANAR EPITAXIAL NPNTRANSISTOR
HIGH VOLTAGE
APPLICATIONS:
These devices are particularly suited asdrivers in high-voltage low current inverters,switching and series regulators.
VCBO Collector Base Voltage (IE = 0)
VCEO Collector Emitter Voltage (IB = 0)
VEBO Emitter Base Voltage (IC = 0)IC Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase 25C
Tamb 50C
Tstg Storage Temperature
Tj Junction Temperature
450V
350V
300V
250V
MECHANICAL DATADimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated) 2N3439 2N3440
0.89(0.035)
max.12.70
(0.500)min. 0.41 (0.016)
0.53 (0.021)dia.
5.08 (0.200)typ.
0.71 (0.028)0.86 (0.034)
2.54(0.100)
45
6.10 (0.240)6.60 (0.260)
8.51 (0.34)9.40 (0.37)
7.75 (0.305)8.51 (0.335)
1
2
3
0.74 (0.029)1.14 (0.045)
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
TO39 PACKAGE (TO-205AD)
7/29/2019 2N3439_40
2/2
2N34392N3440
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3066Issue: 1
Parameter Test Conditions Min. Typ. Max. UnitIC = 50mA 2N3439
IC = 50mA 2N3440
VCE = 300V 2N3439
VCE = 200V 2N3440
VCE = 450V 2N3439
VCE = 300V 2N3440VCB = 350V 2N3439
VCB = 250V 2N3440
VEB = 6V
IC = 50mA IB = 4mA
IC = 50mA IB = 4mA
IC = 20mA
VCE = 10V
IC = 2mA
VCE = 10V
VCEO(sus)* CollectorEmitter Sustaining Voltage
(IB = 0)
ICEO Collector Cut-off Current
(IB = 0)
ICEX Collector Cut-off Current
(VBE = -1.5V)ICBO CollectorBase Cut-off Current
(IE = 0)
IEBO Emitter Cut-off Current (IC = 0)
VCE(sat)* CollectorEmitter Saturation Voltage
VBE(sat)* BaseEmitter Saturation Voltage
hFE* DC Current Gain
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
fT Transition Frequency
Cob Output Capacitance
hfe Small Signal Current Gain
IC = 10mA VCE = 10V f = 5MHz
VCB = 10V f = 1MHz
IC = 5mA VCE = 10V f = 1kHz
15
10
25
MHz
pF
* Pulse test tp = 300s , 2%
DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated)
350
250
20
50
500
50020
20
20
0.5
1.3
40 160
30
V
A
A
A
A
V
V
2N3439 only
THERMAL DATA
Parameter Min. Typ. Max. Unit
RJA Thermal Resistance Junction to Ambient 175 C/W
RJC Thermal Resistance Junction to Case 35 C/W